公开(公告)号：US20140185640A1

公开(公告)日：2014-07-03

申请号：US14145656

申请日：2013-12-31

Applicant: Faquir C. Jain

Inventor： Faquir C. Jain

IPC: H01S5/34

CPC classification number: H01S5/021 ,  B82Y20/00 ,  H01S3/30 ,  H01S5/06203 ,  H01S5/10 ,  H01S5/2009 ,  H01S5/3214 ,  H01S5/3403 ,  H01S5/3412 ,  H01S5/3427 ,  H01S5/4025

Abstract: Structures and methodologies to obtain lasing in indirect gap semiconductors such as Ge and Si are provided and involves excitonic transitions in the active layer comprising of at least one indirect gap layer. Excitonic density is increased at a given injection current level by increasing their binding energy by the use of quantum wells, wires, and dots with and without strain. Excitons are formed by holes and electrons in two different layers that are either adjacent or separated by a thin barrier layer, where at least one layer confining electrons and holes is comprised of indirect gap semiconductor such as Si and Ge, resulting in high optical gain and lasing using optical and electrical injection pumping. In other embodiment, structures are described where excitons formed in an active layer confining electrons in the direct gap layer and holes in the indirect gap layer; where layers are adjacent or separated by a thin barrier layer. The carrier injection structures are configured as p-n junctions and metal-oxide-semiconductor (MOS) field-effect transistors. The optical cavity is realized to confine photons. In the case of MOS structures, electrons from the inversion layer, formed under the gate at voltages above threshold, are injected into one or more layers comprising of quantum wells (2-d), quantum wires (1-d) and quantum dots (0-d) structures. The confinement of photons emitted upon electron-hole recombination produces lasing in active layer comprising of dots/wells. Bipolar transistor structures can also be configured as lasers.

Abstract translation: 提供了在诸如Ge和Si之类的间接间隙半导体中获得激光的结构和方法，并且在包括至少一个间接间隙层的有源层中涉及激子跃迁。 在给定的注入电流水平下，通过使用量子阱，电线和具有和没有应变的点增加它们的结合能来增加激子密度。 激子由两层不同层中的空穴和电子形成，这两层分别由薄的阻挡层相邻或隔开，其中限制电子和空穴的至少一个层由诸如Si和Ge之类的间接间隙半导体构成，导致高的光学增益和 激光使用光电注入泵浦。 在其他实施例中，描述了在有源层中形成的激子限制直接间隙层中的电子和间接间隙层中的空穴的结构; 其中层被薄的阻挡层相邻或隔开。 载流子注入结构被配置为p-n结和金属氧化物半导体（MOS）场效应晶体管。 光腔实现了光子的限制。 在MOS结构的情况下，在栅极上形成的电压高于阈值的电子被注入包括量子阱（2-d），量子线（1-d）和量子点（1-d）的一个或多个层 0-d）结构。 在电子 - 空穴复合发射的光子的限制在包含点/孔的有源层中产生激光。 双极晶体管结构也可以配置为激光器。

公开(公告)号：US08643036B2

公开(公告)日：2014-02-04

申请号：US13550433

申请日：2012-07-16

Applicant: Rajat Sharma ,  Paul Morgan Pattison ,  John Francis Kaeding ,  Shuji Nakamura

Inventor： Rajat Sharma ,  Paul Morgan Pattison ,  John Francis Kaeding ,  Shuji Nakamura

IPC: H01L33/00

CPC classification number: H01L33/007 ,  B82Y20/00 ,  H01L33/22 ,  H01S5/0207 ,  H01S5/10 ,  H01S5/1053 ,  H01S5/34333

Abstract: A semiconductor light-emitting diode, and method of fabricating same, wherein an indium (In)-containing light-emitting layer, as well as subsequent device layers, is deposited on a textured surface. The resulting device is a phosphor-free white light source.

Abstract translation: 一种半导体发光二极管及其制造方法，其中含铟（In）的发光层以及随后的器件层沉积在织构表面上。 所得装置是无磷白色光源。

公开(公告)号：US08530881B2

公开(公告)日：2013-09-10

申请号：US13037006

申请日：2011-02-28

Applicant: Andrew James Shields

Inventor： Andrew James Shields

IPC: H01L33/00

CPC classification number: B82Y30/00 ,  B82Y20/00 ,  G02B6/1225 ,  G02F1/0126 ,  G02F2203/15 ,  H01S5/041 ,  H01S5/10 ,  H01S5/105 ,  H01S5/3412

Abstract: An optical device which can operate as a single photon emitter 1, comprising a three dimensional optical cavity 7 which spatially confines a photon to the order of the photon wavelength in all three dimensions. The cavity 7 is configured to define preferred emission direction for photons entering the cavity. A photon can be supplied to the cavity using a quantum dot 5. Strong coupling can occur between the cavity 7 and the quantum dot 5 which causes the formation of two hybridised modes. Switching on an off the coupling by irradiating the device with radiation having an energy equal to that of one of the hybridised modes allows the device to act as an optical switch.

Abstract translation: 可以作为单个光子发射器1操作的光学装置，包括在所有三维空间上将光子限制在光子波长的顺序上的三维光学腔7。 空腔7被配置为限定进入空腔的光子的优选发射方向。 可以使用量子点5将光子提供给空腔。在空腔7和量子点5之间可能发生强耦合，这导致形成两种杂化模式。 通过用具有与混合模式中的一种能量相等的能量的辐射照射装置来接通耦合，允许该装置充当光学开关。

公开(公告)号：US08520709B2

公开(公告)日：2013-08-27

申请号：US12936723

申请日：2008-04-11

Applicant: Paolo Baroni ,  Marco De Donno ,  Anna Ronchi

Inventor： Paolo Baroni ,  Marco De Donno ,  Anna Ronchi

IPC: H01S3/136

CPC classification number: H01S3/10038 ,  H01S3/1055 ,  H01S5/02216 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/02476 ,  H01S5/02492 ,  H01S5/062 ,  H01S5/06213 ,  H01S5/06246 ,  H01S5/06251 ,  H01S5/0653 ,  H01S5/0683 ,  H01S5/10 ,  H01S5/101 ,  H01S5/141

Abstract: A laser apparatus includes an external cavity laser (ECL) where the optical signal is modulated by an electrical modulation signal for modulating in frequency the laser output signal. The modulation in frequency produces a modulation of intensity (power) of the laser output signal, also denoted amplitude modulation (AM). A method of controlling the AM amplitude of a signal emitted by an ECL includes a gain medium, a phase element with variable transmissivity induced by the modulation, and a spectrally selective optical filter that selects and keeps the AM amplitude below a certain desired value or minimizes such value. A control method and a laser apparatus are also described in which the reduction of the AM component of the output power is achieved by acting on the gain of the gain medium of the ECL.

公开(公告)号：US20130208750A1

公开(公告)日：2013-08-15

申请号：US13781702

申请日：2013-02-28

Applicant: Electronics and Telecommunications Research Institute

Inventor： Kwang-Ryong OH ,  Dong-Churl KIM ,  Kisoo KIM

IPC: H01S5/10

CPC classification number: H01S5/1014 ,  B82Y20/00 ,  G02B6/1225 ,  G02B19/0028 ,  G02B19/0052 ,  G02B27/0977 ,  G02B27/0988 ,  G02B27/0994 ,  H01S5/0655 ,  H01S5/10 ,  H01S5/1025 ,  H01S5/12

Abstract: Provided is a semiconductor laser diode having a waveguide lens. The semiconductor laser diode includes at least one first waveguide having a narrow width, at least one second waveguide having a wide width wider, and at least one waveguide lens having an increasing width from the first waveguide toward the second waveguide and connecting the first waveguide to the second waveguide. Sidewalls of the waveguide lens connecting the first waveguide to the second waveguide may be curved. The second waveguide may be a waveguide providing an optical gain.

Abstract translation: 提供了具有波导透镜的半导体激光二极管。 半导体激光二极管包括具有窄宽度的至少一个第一波导，宽宽度更宽的至少一个第二波导和从第一波导朝向第二波导的宽度增加的至少一个波导透镜，并将第一波导连接到 第二波导。 将第一波导连接到第二波导的波导透镜的侧壁可以是弯曲的。 第二波导可以是提供光学增益的波导。

公开(公告)号：US08498318B2

公开(公告)日：2013-07-30

申请号：US13128765

申请日：2009-10-29

Applicant: Guillaume Malpuech ,  Dmitry Solnyshkov ,  Aldo Di Carlo ,  Eleonora Petrolati

Inventor： Guillaume Malpuech ,  Dmitry Solnyshkov ,  Aldo Di Carlo ,  Eleonora Petrolati

IPC: H01S5/00

CPC classification number: H01S5/18308 ,  B82Y20/00 ,  H01S5/042 ,  H01S5/10 ,  H01S5/18369 ,  H01S5/18383 ,  H01S5/34333

Abstract: A light (2) emitting system (1) includes an optical cavity (10) having at least one optical mode and including at least one transmissive reflector (12), a first set (20) of quantum wells (21, 22) and elements (31, 32, 33) of electrical injection of the quantum wells of the first set. The quantum wells of the first set are arranged so that at least one of their electronic resonances is a strong coupling regime with an optical mode of the optical cavity and emits a light according to a mixed exciton-polariton mode. The optical cavity further includes a second set (40) of quantum wells (41, 42, 43, 44, 45) arranged outside of the direct range of the elements of electrical injection and arranged in relation to the quantum wells of the first set so that at least one of their electronic resonances is in a strong coupling regime with the mixed exciton-polariton mode of the optical cavity.

Abstract translation: 光（2）发射系统（1）包括具有至少一种光学模式的光学腔（10），并且包括至少一个透射反射器（12），量子阱（21,22）的第一组（20）和元件 （31,32,33）电注入第一组的量子阱。 第一组的量子阱被布置成使得其电子谐振中的至少一个是具有光腔的光学模式的强耦合状态，并且根据混合的激子 - 极化子模式发射光。 光腔还包括布置在电注入元件的直接范围之外并相对于第一组的量子阱布置的量子阱（41,42,43,44,45）的第二组（40） 它们的电子共振中的至少一个与光腔的混合激子 - 极化子模式处于强耦合状态。

公开(公告)号：US08450763B2

公开(公告)日：2013-05-28

申请号：US13564101

申请日：2012-08-01

Applicant: Masamitsu Mochizuki

Inventor： Masamitsu Mochizuki

IPC: H01L33/00

CPC classification number: H01L33/60 ,  H01S5/026 ,  H01S5/10 ,  H01S5/125

Abstract: A light emitting device includes an active layer; at least a portion of the active layer constitutes a gain region. The gain region is continuous from a first end surface and a second end surface. The gain region includes a first portion extending from the first end surface to a first reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; a second portion extending from the second end surface to the second reflective surface in a direction tilted with respect to a normal to the first side surface as viewed two-dimensionally; and a third portion extending from the first reflective surface to the second reflective surface in a direction tilted with respect to a normal to the first reflective surface as viewed two-dimensionally.

Abstract translation: 发光器件包括有源层; 有源层的至少一部分构成增益区域。 增益区域从第一端面和第二端面连续。 所述增益区域包括第二部分，所述第一部分从第一端面延伸到第一反射表面，所述第一部分在二维方向上以相对于所述第一侧表面的法线倾斜的方向延伸; 第二部分，从第二端面延伸到第二反射表面，其方向相对于第一侧表面的法线倾斜;二维观察; 以及第三部分，从第二反射表面延伸到相对于第一反射表面的法线倾斜的方向，如二维地观察。

公开(公告)号：US20130121353A1

公开(公告)日：2013-05-16

申请号：US13676652

申请日：2012-11-14

Applicant: Francis J. Kub ,  Marc Currie

Inventor： Francis J. Kub ,  Marc Currie

IPC: H01S3/10 ,  H01S3/091 ,  H01S3/09

CPC classification number: H01S5/10 ,  B82Y20/00 ,  H01S3/06 ,  H01S3/081 ,  H01S3/0813 ,  H01S3/0815 ,  H01S3/083 ,  H01S3/0906 ,  H01S3/091 ,  H01S3/10 ,  H01S3/11 ,  H01S3/1106 ,  H01S3/1112 ,  H01S3/1115 ,  H01S3/1118 ,  H01S3/113 ,  H01S5/028 ,  H01S5/0601 ,  H01S5/1032 ,  H01S5/14 ,  H01S5/1838 ,  H01S5/3401 ,  H01S5/50

Abstract: Laser devices are presented in which a graphene saturable absorber and an optical amplifier are disposed in a resonant optical cavity with an optical or electrical pump providing energy to the optical amplifier.

Abstract translation: 提供了激光装置，其中石墨烯可饱和吸收体和光放大器设置在具有向光放大器提供能量的光或电泵的共振光腔中。

公开(公告)号：US20130101297A1

公开(公告)日：2013-04-25

申请号：US13698330

申请日：2011-06-16

Applicant: Romain Brenot ,  Francis Poingt

Inventor： Romain Brenot ,  Francis Poingt

IPC: H04B10/00 ,  H01S5/10 ,  H01S5/042

CPC classification number: H04B10/2971 ,  H01S3/2333 ,  H01S5/026 ,  H01S5/028 ,  H01S5/042 ,  H01S5/10 ,  H01S5/1017 ,  H01S5/5027 ,  H04B10/291

Abstract: The present document relates to passive optical networks (PON). More particularly but not exclusively, it relates to the use of a reflective semiconductor optical amplifier (RSOA) for amplifying signals in a Gigabit PON (GPON) or WDM-PON. An apparatus configured to amplify light at different wavelengths in an optical network is described. The apparatus comprises a first active material configured to amplify light at a first wavelength and a second active material configured to amplify light at a second wavelength. Furthermore, the apparatus comprises a first reflector which separates the first and second active materials and which is configured to reflect light at the first wavelength and which is configured to be substantially transparent to light at the second wavelength. In addition, the apparatus comprises a second reflector adjacent the second active material opposite to the first reflector which is configured to reflect light at the second wavelength.

Abstract translation: 本文件涉及无源光网络（PON）。 更具体地但不排他地涉及使用反射半导体光放大器（RSOA）来放大千兆位PON（GPON）或WDM-PON中的信号。 描述了一种被配置为放大光网络中不同波长的光的装置。 该装置包括配置成放大第一波长的光的第一活性材料和被配置成放大第二波长的光的第二活性材料。 此外，该装置包括第一反射器，其分离第一和第二活性材料并且被配置为反射第一波长的光并被配置为对于第二波长的光是基本上透明的。 此外，该装置包括与第一反射器相对的与第二活性材料相邻的第二反射器，其被配置为反射第二波长的光。

公开(公告)号：US08420993B2

公开(公告)日：2013-04-16

申请号：US13152779

申请日：2011-06-03

Applicant: Shigeaki Sekiguchi

Inventor： Shigeaki Sekiguchi

IPC: G01J1/32

CPC classification number: H01S5/026 ,  G02F1/0102 ,  G02F2201/58 ,  G02F2203/20 ,  G02F2203/21 ,  G02F2203/50 ,  G02F2203/70 ,  H01S5/0265 ,  H01S5/0625 ,  H01S5/10 ,  H01S5/1025 ,  H01S5/14

Abstract: An optical signal generator includes a single-mode laser; a reflecting mirror to define another cavity different from a cavity of the single-mode laser, and reflect a part of output light from the single-mode laser to return the part of the output light to the single-mode laser; an intensity modulator provided between the single-mode laser and the reflecting mirror; and a phase adjuster, provided between the single-mode laser and the reflecting mirror, to adjust a frequency difference between a signal on state and a signal off state generated in accordance with intensity modulation by the intensity modulator.

Abstract translation: 光信号发生器包括单模激光器; 反射镜，以限定与单模激光器的腔不同的另一腔，并且反射来自单模激光器的输出光的一部分以将输出光的一部分返回到单模激光器; 设置在单模激光器和反射镜之间的强度调制器; 以及设置在单模激光器和反射镜之间的相位调节器，用于调整信号接通状态与根据强度调制器的强度调制产生的信号关闭状态之间的频率差。