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    ENHANCED GRAPHENE STRUCTURE BASED ON WEAK COUPLING, GRAPHENE FILM, AND PHOTOELECTRIC DEVICE
    22.
    发明申请
    ENHANCED GRAPHENE STRUCTURE BASED ON WEAK COUPLING, GRAPHENE FILM, AND PHOTOELECTRIC DEVICE 有权

    公开(公告)号：US20220204348A1

    公开(公告)日：2022-06-30

    申请号：US17696899

    申请日：2022-03-17

    申请人： ZHEJIANG UNIVERSITY

    发明人： Chao Gao ,  Li Peng ,  Lingfei Li ,  Wenzhang Fang ,  Yingjun Liu

    IPC分类号： C01B32/186 ,  H01L31/028

    摘要： A weakly coupled enhanced graphene film includes an enhanced graphene structure based on weak coupling, wherein the enhanced graphene structure based on weak coupling comprises a plurality of graphene units stacked vertically; the graphene unit is a single graphene sheet, or consists of two or more graphene sheets stacked in AB form; two vertically adjacent graphene units are weakly coupled, to promote the hot electron transition and increase the joint density of states, thereby increasing the number of hot electrons in high-energy states; the stacking direction of the graphene units in the graphene structure is in the thickness direction of the graphene film; and the graphene film enhances the accumulation of hot electrons in high-energy states by the enhanced graphene structure based on weak coupling.

    GRAPHENE WOOL AND MANUFACTURE THEREOF
    23.
    发明申请
    GRAPHENE WOOL AND MANUFACTURE THEREOF 有权

    公开(公告)号：US20220088566A1

    公开(公告)日：2022-03-24

    申请号：US17310360

    申请日：2019-02-01

    申请人： UNIVERSITY OF PRETORIA

    发明人： Patricia Forbes ,  Genna-Leigh Schoonraad

    IPC分类号： B01J20/20 ,  B01J19/00 ,  B01J19/14 ,  C01B32/186 ,  B01J20/28

    摘要： The invention provides a system for manufacturing graphene wool which includes a receptacle, a graphene growth substrate locatable inside the receptacle, a heating device for increasing the temperature inside the receptacle, an inlet gas flow communication with the receptacle for controlling the introduction of gaseous substances into the receptacle, and a cooling device for rapidly decreasing the temperature inside the receptacle. The invention extends to a method for manufacturing graphene wool and to an air pollutant trap which includes: a sorbent, and a housing for housing the sorbent, wherein the sorbent includes graphene.

    Method of producing a two-dimensional material
    25.
    发明授权
    Method of producing a two-dimensional material 有权

    公开(公告)号：US11217447B2

    公开(公告)日：2022-01-04

    申请号：US16795841

    申请日：2020-02-20

    申请人： Paragraf Ltd.

    发明人： Simon Charles Stewart Thomas

    IPC分类号： C30B25/10 ,  H01L21/02 ,  C30B29/02 ,  C30B29/06 ,  C30B25/16 ,  C30B29/60 ,  C23C16/26 ,  C23C16/24 ,  C01B32/186 ,  C23C16/455 ,  C30B25/14 ,  C30B29/40

    摘要： A method of producing graphene or other two-dimensional material such as graphene including heating the substrate held within a reaction chamber to a temperature that is within a decomposition range of a precursor, and that allows two-dimensional crystalline material formation from a species released from the decomposed precursor; establishing a steep temperature gradient (preferably >1000° C. per meter) that extends away from the substrate surface towards an inlet for the precursor; and introducing precursor through the relatively cool inlet and across the temperature gradient towards the substrate surface. The steep temperature gradient ensures that the precursor remains substantially cool until it is proximate the substrate surface thus minimizing decomposition or other reaction of the precursor before it is proximate the substrate surface. The separation between the precursor inlet and the substrate is less than 100 mm.

    Method of synthesizing thickness-controlled graphene through chemical vapor deposition using Cu—Ni thin film laminate
    29.
    发明授权
    Method of synthesizing thickness-controlled graphene through chemical vapor deposition using Cu—Ni thin film laminate 有权

    公开(公告)号：US11117804B2

    公开(公告)日：2021-09-14

    申请号：US15867913

    申请日：2018-01-11

    申请人： CENTER FOR ADVANCED SOFT ELECTRONICS

    发明人： Kilwon Cho ,  Min Seok Yoo ,  Hyo Chan Lee

    IPC分类号： C01B32/182 ,  C01B32/186 ,  C23C14/34 ,  C23C16/26 ,  C23C16/04 ,  C23C16/02

    摘要： Disclosed is a method of synthesizing graphene, wherein a Cu—Ni thin film laminate including a copper thin film and a nickel thin film formed thereon is placed in a chemical vapor depositor, brought into contact with a graphene precursor and subjected to chemical vapor deposition (CVD), thus synthesizing thickness-controlled graphene on the copper thin film, whereby the thickness of multilayer graphene can be easily and reproducibly controlled by adjusting only nickel thickness and CVD time, and a process window for obtaining reproducible results can be widened due to self-limiting properties whereby the maximum thickness of graphene is obtained after a certain synthesis time due to the thickness-controlled nickel thin film. Also, carbon atoms absorbed to the nickel thin film reach the copper thin film opposite thereto through internal diffusion of the metal laminate to thus grow graphene via surface-mediated reaction thereon, thereby improving the uniformity of synthesized graphene.

    Chemical vapor deposition process to build 3D foam-like structures
    30.
    发明授权
    Chemical vapor deposition process to build 3D foam-like structures 有权

    公开(公告)号：US11104989B2

    公开(公告)日：2021-08-31

    申请号：US16081653

    申请日：2017-03-09

    申请人： Nanyang Technological University

    发明人： Manuela Loeblein ,  Siu Hon Tsang ,  Hang Tong Edwin Teo

    IPC分类号： C23C16/34 ,  C01B35/14 ,  C23C16/04 ,  C23C16/26 ,  C01B32/186 ,  C23C16/02 ,  C23C16/01 ,  B82Y40/00

    摘要： A chemical vapor deposition process comprising heating a porous metal template at a temperature range of 500 to 2000° C.; and passing a gas mixture comprising a carrier gas carrying along a vapor of an organometallic compound and at least one of a carbon precursor gas and a boron nitride precursor gas through the heated metal template is provided. The heating temperature causes the decomposition of the organometallic compound vapor into metal particles, the carbon precursor gas into graphene domains, and/or the boron nitride precursor gas into hexagonal-boron nitride domains. The graphene domains and/or the hexagonal-boron nitride domains nucleate and grow on the metal particles and the metal template to form a three-dimensional interconnected porous network of graphene and/or the hexagonal-boron nitride. A foam-like structure produced by a process as described above is also provided. A foam-like structure as described above for use in electrochemistry, solar cells, filler, thermal interface material, sensing or biological applications is further provided.