公开(公告)号：US07518187B2

公开(公告)日：2009-04-14

申请号：US10546693

申请日：2004-03-12

申请人： Masahiro Sakurada

发明人： Masahiro Sakurada

IPC分类号： C30B13/00 ,  H01L29/94 ,  H01L21/331

CPC分类号： C30B29/06 ,  C30B15/203 ,  H01L21/76243 ,  H01L21/76254

摘要： The present invention is an SOI wafer in which at least a silicon active layer is formed over a support substrate via an insulator film or on a support substrate directly, wherein, at least, the silicon active layer consists of a P(phosphorus)-doped silicon single crystal grown by Czochralski method, which is occupied by N region and/or defect-free I region, and contains Al (aluminum) with concentration of 2×1012 atoms/cc or more. There can be provided with ease and at low cost an SOI wafer with high electrical reliability in a device fabrication process, that has an excellent electric property without generation of micro pits by cleaning with hydrofluoric acid etc. even in the case of forming an extremely thin silicon active layer, or that retains high insulation property even in the case of forming an extremely thin inter-layer insulator film.

摘要翻译： 本发明是一种SOI晶片，其中至少有一个硅有源层经由绝缘膜或直接在支撑衬底上形成在支撑衬底上，其中至少硅活性层由P（磷）掺杂 通过Czochralski法生长的硅单晶，其被N区和/或无缺陷I区占据，并且含有浓度为2×10 12原子/ cc以上的Al（铝）。 可以容易且廉价地提供在器件制造工艺中具有高电可靠性的SOI晶片，即使在形成非常薄的情况下也具有优异的电性能而不产生微凹坑，甚至通过用氢氟酸等清洗 硅的有源层，即使在形成极薄的层间绝缘膜的情况下也能够保持高的绝缘性。

公开(公告)号：US20070209579A1

公开(公告)日：2007-09-13

申请号：US10589719

申请日：2005-11-16

申请人： Masahiro Sasaura ,  Hiroki Kohda ,  Kazuo Fujiura

发明人： Masahiro Sasaura ,  Hiroki Kohda ,  Kazuo Fujiura

IPC分类号： C30B11/00 ,  C30B13/00

CPC分类号： C30B29/30 ,  C30B11/002 ,  C30B11/003 ,  C30B29/32 ,  Y10T117/10 ,  Y10T117/1016 ,  Y10T117/1068 ,  Y10T117/1088

摘要： Highly-qualified crystals are grown with good yield under an optimal temperature condition by controlling the axial temperature distribution in the vicinity of the seed crystal locally. In an apparatus for producing crystals to grow crystals wherein a seed crystal 14 is placed in a crucible 11 which is retained in a furnace, raw materials 12 filled in the crucible 11 are heated and liquefied, and a raw material 12 slowly cooled in the crucible 11 from below upward, the apparatus including a temperature controller for controlling temperature to cool or heat the vicinity of the seed crystal 14 locally. The temperature controller controls the temperature by a hollow constructed cap 17 mounted outside the portion of crucible 11 and regulates refrigerant flow running through the hollow portion.

摘要翻译： 通过局部控制籽晶附近的轴向温度分布，在最佳温度条件下生长出高质量的晶体。 在晶体生长装置中，将晶种14放置在保持在炉中的坩埚11中，填充在坩埚11中的原料12被加热并液化，在坩埚中缓慢冷却的原料12 该装置包括用于控制温度以局部冷却或加热晶种14附近的温度控制器。 温度控制器通过安装在坩埚11的外部的中空构造的盖17来控制温度，并且调节流过中空部分的制冷剂流。

公开(公告)号：US20070193507A1

公开(公告)日：2007-08-23

申请号：US10578057

申请日：2003-11-10

申请人： Csaba Szeles ,  Honnavalli Vydyanath

发明人： Csaba Szeles ,  Honnavalli Vydyanath

IPC分类号： C30B29/46 ,  C30B21/04 ,  C30B13/00

CPC分类号： H01L31/0296 ,  G01T1/24 ,  H01L21/02562 ,  H01L21/02576 ,  H01L21/02581 ,  H01L31/085

摘要： A radiation detector made from a compound, or alloy, comprising CdxZn1-xTe (0≦x≦1), an element from column III or column VII of the periodic table in a concentration about 10 to 10,000 atomic parts per billion and an element selected from C the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu in a concentration about 10 to 10,000 atomic parts per billion exhibits full electrical compensation, high-resistivity, full depletion under an applied electrical bias and excellent charge transport.

摘要翻译： 由CdxZn1-xTe（0 <= x <= 1）的化合物或合金制成的放射线检测器，元素周期表第III列或第VII列的元素，浓度为10至10,000原子数十亿， 元素选自C组成的浓度为10〜10,000原子数十亿份左右的La，Ce，Pr，Nd，Pm，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb和Lu组成的组， 电补偿，高电阻率，在施加的电偏压下的完全耗尽和优异的电荷传输。

公开(公告)号：US20070113777A1

公开(公告)日：2007-05-24

申请号：US11518368

申请日：2006-09-07

申请人： Gordon Von Der Goenna ,  Lutz Parthier ,  Gunther Wehrhan ,  Martin Letz

发明人： Gordon Von Der Goenna ,  Lutz Parthier ,  Gunther Wehrhan ,  Martin Letz

IPC分类号： C30B13/00 ,  C30B29/12 ,  C30B21/04

CPC分类号： G02B1/02 ,  C30B11/00 ,  C30B29/12 ,  G03F7/70958 ,  H01S3/034 ,  H01S3/225

摘要： A calcium fluoride single crystal with increased radiation resistance can be prepared by growing under controlled conditions of solidification from a melt of a crystal raw material containing a dopant affording ions of Al and/or Ga and/or In and/or Tl. Such a single crystal after irra-diation with at least 5×108 laser pulses having a pulse energy of at least 10 mJ/cm2 shows at a wavelength of 193 nm an absorption of less than 0.1%/cm.

摘要翻译： 通过在含有Al和/或Ga和/或In和/或Tl的离子的掺杂剂的晶体原料的熔​​体的固化控制条件下生长，可以制备具有增强的耐辐射性的氟化钙单晶。 在具有至少10mJ / cm 2的脉冲能量的至少5×10 8个激光脉冲进行辐照后的这种单晶在193nm的波长处显示出吸收 小于0.1％/ cm。

公开(公告)号：US20060283379A1

公开(公告)日：2006-12-21

申请号：US11356414

申请日：2006-02-17

申请人： Shuichi Inami ,  Nobumitsu Takase ,  Yasuhiro Kogure ,  Ken Hamada ,  Tsuyoshi Nakamura

发明人： Shuichi Inami ,  Nobumitsu Takase ,  Yasuhiro Kogure ,  Ken Hamada ,  Tsuyoshi Nakamura

IPC分类号： C30B21/04 ,  C30B13/00 ,  C30B28/08

CPC分类号： C30B29/06 ,  C30B15/04 ,  C30B15/14

摘要： In a method for growing a silicon single crystal, a silicon single crystal is grown by the Czochralski method to have an oxygen concentration of 12×1017 to 18×1017 atoms/cm3 on ASTM-F121 1979. A mixed gas of an inert gas and a gaseous substance containing hydrogen atoms is used as an atmospheric gas for growing the single crystal. A temperature of the silicon single crystal is controlled during the growth of the crystal such that the ratio Gc/Ge of an axial thermal gradient Gc at the central portion of the crystal between its melting point and its temperature of 1350° C. to an axial thermal gradient Ge at the periphery of the crystal between its melting point and its temperature of 1350° C. is 1.1 to 1.4. The axial thermal gradient Gc at the central portion of the crystal is 3.0 to 3.5° C./mm.

摘要翻译： 在用于生长硅单晶的方法中，硅单晶通过切克劳斯（Czochralski）法生长，以使氧浓度为12×10 17至18×10 17原子/ cm 2 > 3 。使用惰性气体和含有氢原子的气态物质的混合气体作为用于生长单晶的气氛气体。 在晶体生长期间控制硅单晶的温度，使得晶体中心部分处的熔点和其温度为1350℃之间的轴向热梯度Gc的比率Gc / Ge与轴向 在其熔点和其温度为1350℃之间的晶体周边的热梯度Ge为1.1至1.4。 晶体中心部分的轴向热梯度Gc为3.0〜3.5℃/ mm。

公开(公告)号：US20060254500A1

公开(公告)日：2006-11-16

申请号：US11293655

申请日：2005-12-02

申请人： James Im ,  Paul Van Der Wilt

发明人： James Im ,  Paul Van Der Wilt

IPC分类号： C30B21/04 ,  C30B13/00 ,  C30B28/08

CPC分类号： H01L21/02686 ,  B23K26/0738 ,  C30B13/00 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A polycrystalline film is prepared by (a) providing a substrate having a thin film disposed thereon, said film capable of laser-induced melting, (b) generating a sequence of laser pulses having a fluence that is sufficient to melt the film throughout its thickness in an irradiated region, each pulse forming a line beam having a predetermined length and width, said width sufficient to prevent nucleation of solids in a portion of the thin film that is irradiated by the laser pulse, (c) irradiating a first region of the film with a first laser pulse to form a first molten zone, said first molten zone demonstrating a variation in width along its length to thereby define a maximum width (Wmax) and a minimum width (Wmin), wherein the first molten zone crystallizes upon cooling to form one or more laterally grown crystals, (d) laterally moving the film in the direction of lateral growth a distance that is greater than about one-half Wmax and less than Wmin; and (e) irradiating a second region of the film with a second laser pulse to form a second molten zone having a shape that is substantially the same as the shape of the first molten zone, wherein the second molten zone crystallizes upon cooling to form one or more laterally grown crystals that are elongations of the one or more crystals in the first region.

摘要翻译： 通过（a）提供具有设置在其上的薄膜的基板，所述膜能够进行激光诱导熔化，（b）产生具有足以使膜在整个厚度上熔化的能量密度的激光脉冲序列来制备多晶膜 在照射区域中，每个脉冲形成具有预定长度和宽度的线束，所述宽度足以防止由激光脉冲照射的薄膜部分中的固体成核，（c）照射第一区域 薄膜具有第一激光脉冲以形成第一熔融区，所述第一熔融区表现出沿其长度的宽度变化，从而限定最大宽度（W max）和最小宽度（W _{max 且小于W mi n}

公开(公告)号：US20050223967A1

公开(公告)日：2005-10-13

申请号：US10822336

申请日：2004-04-12

申请人： Leo Schowalter ,  Glen Slack

发明人： Leo Schowalter ,  Glen Slack

IPC分类号： C30B1/00 ,  C30B13/00 ,  C30B21/04 ,  C30B23/00 ,  C30B25/00 ,  C30B28/08 ,  C30B28/12 ,  C30B28/14 ,  C30B29/40 ,  C30B35/00

CPC分类号： C30B29/40 ,  C30B11/002 ,  C30B23/00 ,  C30B23/066 ,  C30B29/403 ,  C30B35/002 ,  Y10T117/10 ,  Y10T117/108 ,  Y10T117/1084

摘要： A crucible for growing III-nitride (e.g., aluminum nitride) single crystals is provided. The crucible includes an elongated wall structure defining an interior crystal growth cavity. Embodiments include a plurality of grains and a wall thickness of at least about 1.5 times the average grain size. In particular embodiments, the crucible includes first and second layers of grains the first layer including grains forming an inside surface thereof and the second layer being superposed with the first layer. The crucible may be fabricated from tungsten-rhenium (W—Re) alloys; rhenium (Re); tantalum monocarbide (TaC); tantalum nitride (Ta2N); hafnium nitride (HfN); a mixture of tungsten and tantalum (W—Ta); tungsten (W); and combinations thereof.

摘要翻译： 提供了用于生长III族氮化物（例如氮化铝）单晶的坩埚。 坩埚包括限定内部晶体生长腔的细长壁结构。 实施例包括多个晶粒和至少约平均晶粒尺寸的1.5倍的壁厚。 在具体实施方案中，坩埚包括第一和第二颗粒层，第一层包括形成内表面的颗粒，第二层与第一层重叠。 坩埚可以由钨 - 铼（W-Re）合金制成; 铼（Re）; 钽单体碱（TaC）; 氮化钽（Ta 2 N）; 氮化铪（HfN）; 钨和钽的混合物（W-Ta）; 钨（W）; 及其组合。

公开(公告)号：US20050188918A1

公开(公告)日：2005-09-01

申请号：US10513320

申请日：2003-05-06

申请人： Nikolai Abrosimov ,  Helge Riemann

发明人： Nikolai Abrosimov ,  Helge Riemann

IPC分类号： B22D11/00 ,  B22D11/01 ,  C01B33/02 ,  C30B13/00 ,  C30B13/20 ,  C30B15/00 ,  C30B15/08 ,  H01L21/208 ,  C30B1/00

CPC分类号： C30B13/20 ,  C30B15/08 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1052 ,  Y10T117/1056

摘要： The invention relates to a device for the production of crystal rods having a defined cross-section and a column-shaped polycrystalline structure by means of floating-zone continuous crystallization, comprising at least one crucible filled with crystalline material, provided with a central deviation for transporting the contents of the crucible to a growing crystal rod arranged below the crucible, whereby the central deviation plunges into the melt meniscus, also comprising means for continuously adjustable provision of crystalline material to the crucible, and means for simultaneously feeding the melt energy and adjusting the crystallization front. In order to produce crystal rods having a defined diameter and a column-shaped polycrystalline structure using heating means which are technically less complex, while at the same time guaranteeing high crystallization rates and stable phase definition, the means for simultaneously feeding the melt energy and adjusting the crystallization front on the growing crystal rod (8) is a flat induction coil (5) which has an opening, said induction coil (5) being arranged at a distance from the crucible (4) and/or being vertically moveable in relation to the crystallization front.

摘要翻译： 本发明涉及一种用于通过浮区连续结晶生产具有限定横截面的晶棒和柱状多晶结构的装置，包括至少一个填充有结晶材料的坩埚，该坩埚具有中心偏差 将坩埚的内容物输送到布置在坩埚下方的生长晶体杆上，由此中心偏离进入熔体弯月面，还包括用于连续调节地向坩埚提供结晶材料的装置，以及用于同时进料熔体能量和调节 结晶前沿。 为了制造具有规定直径的晶棒和使用技术上较不复杂的加热装置的柱状多晶结构，同时保证高结晶速率和稳定的相位定义，同时供给熔体能量并调节 生长晶棒（8）上的结晶前沿是具有开口的平坦感应线圈（5），所述感应线圈（5）布置在与坩埚（4）相距一定距离处和/或可相对于 结晶前沿。

公开(公告)号：US20050181136A1

公开(公告)日：2005-08-18

申请号：US11094187

申请日：2005-03-31

申请人： Yun-Ho Jung

发明人： Yun-Ho Jung

IPC分类号： C30B13/00 ,  H01L21/20 ,  B05D3/02

CPC分类号： H01L21/02675 ,  C30B13/00 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/2026

摘要： An amorphous silicon deposition method includes the step of forming a buffer layer on a transparent substrate; depositing amorphous silicon on the buffer layer by a thickness ranging from about 600 to about 2,000 angstroms; repeatedly irradiating the amorphous silicon layer to completely melt using a laser beam that has a complete melting energy density; and moving the laser beam by a transaction distance for the next laser beam irradiation.

摘要翻译： 非晶硅沉积方法包括在透明基板上形成缓冲层的步骤; 在缓冲层上沉积约600至约2000埃的厚度的非晶硅; 使用具有完全熔融能量密度的激光束反复照射非晶硅层以完全熔化; 并将激光束移动到下一个激光束照射的交易距离。

公开(公告)号：US20050176218A1

公开(公告)日：2005-08-11

申请号：US11046535

申请日：2005-01-28

申请人： Ralf Jonczyk ,  Scott Kendall ,  James Rand

发明人： Ralf Jonczyk ,  Scott Kendall ,  James Rand

IPC分类号： C30B11/00 ,  C30B13/00 ,  C30B29/64 ,  H01L21/00 ,  H01L29/06 ,  H01L31/0236 ,  H01L31/18 ,  H01L21/36 ,  C30B1/00 ,  H01L21/20

CPC分类号： H01L21/67109 ,  C30B11/002 ,  C30B13/00 ,  C30B29/06 ,  H01L29/0657 ,  H01L31/02363 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S438/906 ,  Y10S438/958

摘要： There is provided a method of fabricating a wafer, comprising depositing semiconductor material into a recess in a setter, moving the setter through a heating/cooling region to subject the semiconductor material to a temperature profile, and removing a wafer from the recess. The size and shape of the wafer are substantially equal to the size of the wafer when it is used. As a result, the wafer can be fabricated in any desired shape and with any of a variety of surface structural features and/or internal structural features. The temperature profile can be closely controlled, enabling production of wafers having structural features not previously obtainable. There are also provided wafers formed by such methods and setters for use in such methods.

摘要翻译： 提供了一种制造晶片的方法，包括将半导体材料沉积到固定器的凹部中，通过加热/冷却区域移动固定器以使半导体材料受到温度分布，以及从凹部移除晶片。 当使用晶片时，晶片的尺寸和形状基本上等于晶片的尺寸。 结果，晶片可以以任何期望的形状和各种表面结构特征和/或内部结构特征中的任一种制造。 可以严格控制温度曲线，使得能够生产具有以前不可获得的结构特征的晶片。 还提供了通过这种方法和设置器形成的用于这种方法的晶片。