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    Edge emission electron source and TFT pixel selection
    296.
    发明授权
    Edge emission electron source and TFT pixel selection 有权
    边缘发射电子源和TFT像素选择

    公开(公告)号：US08120550B2

    公开(公告)日：2012-02-21

    申请号：US11499841

    申请日：2006-08-04

    Applicant: Frank J. DiSanto ,  Denis A. Krusos

    Inventor： Frank J. DiSanto ,  Denis A. Krusos

    IPC: G09G3/20

    CPC classification number: G09G3/22 ,  G09G2300/0842 ,  H01J29/04 ,  H01J29/96 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2201/319

    Abstract: The present invention relates to a display device that employs edge emitters as a source for pixel electrons. The edge emitters allow the viewing glass plate to be made very small or eliminated, thereby substantially reducing the size of or eliminating the spacers typically utilized in conventional display devices and thereby enabling a simple and compact assembly structure. In one embodiment a pixel configuration comprises a phosphor area disposed between a plurality edge emitters, each of which are associated with tynes that are adapted to reduce the distance between the emitters and that separate the phosphor area into segments such that the emitters emit electrons when the voltage between a phosphor segment and the an emitter exceed a threshold voltage to cause the phosphor segment to emit light.

    Abstract translation: 本发明涉及采用边缘发射器作为像素电子源的显示装置。 边缘发射器允许观察玻璃板制造得非常小或被消除，从而大大减小了常规显示装置中通常使用的间隔物的尺寸或消除间隔物，从而使得能够实现简单和紧凑的组装结构。 在一个实施例中，像素配置包括设置在多个边缘发射器之间的磷光体区域，每个发射器与适于减小发射器之间的距离的泰恩相关联，并且将磷光体区域分成段，使得当 荧光体区段和发射极之间的电压超过阈值电压以使荧光体区段发光。

    Method for making nanostructures
    297.
    发明授权
    Method for making nanostructures 有权
    制造纳米结构的方法

    公开(公告)号：US07993703B2

    公开(公告)日：2011-08-09

    申请号：US11915238

    申请日：2006-05-29

    Applicant: Thomas Goislard De Monsabert ,  Jean Dijon

    Inventor： Thomas Goislard De Monsabert ,  Jean Dijon

    IPC: C23C16/00 ,  C23C16/26

    CPC classification number: H01J9/025 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  D01F9/127 ,  H01J1/3048 ,  H01J31/127 ,  H01J2201/30469 ,  H01J2201/319 ,  H01L51/0048 ,  H01L51/0541 ,  H01L51/055

    Abstract: A process for making nanostructures on a support, including: supplying a support including a surface layer on one of its faces, covering the surface layer by a catalyst layer structured according to a pattern exposing areas of the surface layer covered by the catalyst and areas of the surface layer not covered by the catalyst, etching the thickness of the surface layer in the areas not covered by the catalyst layer, and selectively growing nanostructures on the areas of the surface layer covered by the catalyst. The process can also be used to make cathode structures with electrically independent nanostructures.

    Abstract translation: 一种在载体上制备纳米结构的方法，包括：在其一个表面上提供包括表面层的载体，通过根据暴露由催化剂覆盖的表面层的区域的图案构成的催化剂层覆盖表面层， 表面层未被催化剂覆盖，蚀刻未被催化剂层覆盖的区域中的表面层的厚度，并且在由催化剂覆盖的表面层的区域上选择性地生长纳米结构。 该方法也可用于制备具有电独立纳米结构的阴极结构。

    ELECTRON EMITTER AND THE METHOD OF MANUFACTURING THE SAME APPARATUS
    299.
    发明申请
    ELECTRON EMITTER AND THE METHOD OF MANUFACTURING THE SAME APPARATUS 审中-公开
    电子发射器及其制造方法

    公开(公告)号：US20070262320A1

    公开(公告)日：2007-11-15

    申请号：US11617060

    申请日：2006-12-28

    Applicant: Yutaka HIROSE ,  Shinichi TAKIGAWA

    Inventor： Yutaka HIROSE ,  Shinichi TAKIGAWA

    IPC: H01L31/0312

    CPC classification number: H01J1/304 ,  H01J29/92 ,  H01J2201/30469 ,  H01J2201/319 ,  H01J2329/0455 ,  H01J2329/0494 ,  H01J2329/92

    Abstract: An electron emitter according to the present invention includes: an area in which a surface of the substrate is exposed or an area in which the inner surface of the substrate is exposed; the SiC substrate with the (0001) surface as a principal surface; the electron emission layer has carbon formed on the substrate surface C; and the electron formed on the area. In addition, the electrode may be formed on the substrate Si surface. Furthermore, the electron emission layer may be formed on a part of the substrate surface C. The electrode may be formed on the area, of the substrate C surface, on which the electron emission layer is not formed.

    Abstract translation: 根据本发明的电子发射器包括：暴露基板的表面的区域或其中衬底的内表面暴露的区域; 具有（0001）表面作为主表面的SiC衬底; 电子发射层在基底表面C上形成碳; 并在该区域形成电子。 此外，电极可以形成在基板Si表面上。 此外，电子发射层可以形成在衬底表面C的一部分上。电极可以形成在其上未形成电子发射层的衬底C表面的区域上。

    Edge emission electron source and TFT pixel selection
    300.
    发明申请
    Edge emission electron source and TFT pixel selection 有权
    边缘发射电子源和TFT像素选择

    公开(公告)号：US20070030216A1

    公开(公告)日：2007-02-08

    申请号：US11499841

    申请日：2006-08-04

    Applicant: Frank DiSanto ,  Denis Krusos

    Inventor： Frank DiSanto ,  Denis Krusos

    IPC: G09G3/22

    CPC classification number: G09G3/22 ,  G09G2300/0842 ,  H01J29/04 ,  H01J29/96 ,  H01J31/127 ,  H01J2201/30423 ,  H01J2201/319

    Abstract: The present invention relates to a display device that employs edge emitters as a source for pixel electrons. The edge emitters allow the viewing glass plate to be made very small or eliminated, thereby substantially reducing the size of or eliminating the spacers typically utilized in conventional display devices and thereby enabling a simple and compact assembly structure. In one embodiment a pixel configuration comprises a phosphor area disposed between a plurality edge emitters, each of which are associated with tynes that are adapted to reduce the distance between the emitters and that separate the phosphor area into segments such that the emitters emit electrons when the voltage between a phosphor segment and the an emitter exceed a threshold voltage to cause the phosphor segment to emit light.

    Abstract translation: 本发明涉及采用边缘发射器作为像素电子源的显示装置。 边缘发射器允许观察玻璃板制造得非常小或被消除，从而大大减小了常规显示装置中通常使用的间隔物的尺寸或消除间隔物，从而使得能够实现简单和紧凑的组装结构。 在一个实施例中，像素配置包括设置在多个边缘发射器之间的磷光体区域，每个发射器与适于减小发射器之间的距离的泰恩相关联，并且将磷光体区域分成段，使得当 荧光体区段和发射极之间的电压超过阈值电压以使荧光体区段发光。

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