公开(公告)号：US10720331B2

公开(公告)日：2020-07-21

申请号：US16245006

申请日：2019-01-10

Applicant: ASM IP Holding B.V.

Inventor： Petri Raisanen ,  Michael Eugene Givens

IPC: H01L21/28 ,  C23C16/455 ,  H01L29/49 ,  H01L21/8238 ,  C23C16/34 ,  H01L29/78

Abstract: Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments, methods may include contacting a substrate with a first vapor phase reactant comprising a transition metal precursor and contacting the substrate with a second vapor phase reactant comprising an alkyl-hydrazine precursor. In some embodiments, related semiconductor device structures may include a PMOS transistor gate structure, the PMOS transistor gate structure including a transition metal nitride film and a gate dielectric between the transition nitride film and a semiconductor body. The transition metal nitride film includes a predominant (200) crystallographic orientation.

公开(公告)号：US20200227250A1

公开(公告)日：2020-07-16

申请号：US16827506

申请日：2020-03-23

Applicant: ASM IP Holding B.V.

Inventor： Viljami Pore ,  Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Gido Van Der Star ,  Toshiya Suzuki

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/50 ,  H01L21/762

Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.

公开(公告)号：US20200224311A1

公开(公告)日：2020-07-16

申请号：US16828753

申请日：2020-03-24

Applicant: ASM IP Holding B.V.

Inventor： Antti Niskanen ,  Eva Tois ,  Hidemi Suemori ,  Suvi Haukka

IPC: C23C16/455 ,  C23C16/04 ,  C23C16/40 ,  C23C16/06

Abstract: A method for selectively depositing a metal oxide film is disclosed. In particular, the method comprises pulsing a metal or semi-metal precursor onto the substrate and pulsing an organic reactant onto the substrate. A reaction between the metal or semi-metal precursor and the organic reactant selectively forms a metal oxide film on either a dielectric layer or a metal layer.

公开(公告)号：US20200224308A1

公开(公告)日：2020-07-16

申请号：US16834283

申请日：2020-03-30

Applicant: ASM IP Holding B.V.

Inventor： Hyun Soo JANG ,  Dae Youn KIM ,  Jeong Ho LEE ,  Young Hoon KIM ,  Seung Seob LEE ,  Woo Chan KIM

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/509

Abstract: A reaction chamber includes a reactor wall, a susceptor contacting the reactor wall to define a reaction space and a gas flow control device and a showerhead member stacked between the reactor wall and the susceptor. The showerhead member includes a gas channel and a showerhead. Penetration holes are formed through a protruding lateral portion of the gas flow control device, and the reactor wall and a lateral portion of the showerhead member are spaced apart from each other to form a gas discharge path. Gas remaining in the gas discharge path is discharged through the penetration holes and a gas outlet formed in an upper portion of the reactor wall. Because of the reaction space and the gas discharge path, unnecessary regions are removed to rapidly change gases from one to another, and thus atomic layer deposition may be performed with high efficiency and productivity.

公开(公告)号：US10714350B2

公开(公告)日：2020-07-14

申请号：US15795056

申请日：2017-10-26

Applicant: ASM IP Holding B.V.

Inventor： Jerry Peijun Chen ,  Fred Alokozai

IPC: H01L21/285 ,  H01L21/28 ,  H01L49/02 ,  H01L23/532 ,  H01L21/768 ,  H01L29/49 ,  H01L27/108

Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.

公开(公告)号：US10714315B2

公开(公告)日：2020-07-14

申请号：US13651144

申请日：2012-10-12

Applicant: ASM IP Holding B.V.

Inventor： Carl White ,  Todd Dunn ,  Eric Shero ,  Kyle Fondurulia

IPC: H01J37/32 ,  C23C16/455

Abstract: A showerhead including a body having an opening, a first plate positioned within the opening and having a plurality of slots, a second plate positioned within the opening and having a plurality of slots, and wherein each of the first plate plurality of slots are concentrically aligned with the second plate plurality of slots.

公开(公告)号：US10707073B2

公开(公告)日：2020-07-07

申请号：US15695147

申请日：2017-09-05

Applicant: ASM IP Holding B.V.

Inventor： Yoshio Susa ,  Yuko Kengoyama ,  Taishi Ebisudani

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/033 ,  H01L21/311 ,  C23C16/455 ,  C23C16/56 ,  C23C16/40 ,  C23C16/04

Abstract: Examples of a film forming method includes repeating first processing and second processing in this order a plurality of times, wherein the first processing supplies material-1 having one silicon atom per molecule onto a substrate, and then generates plasma while reactant gas is introduced, thereby forming a silicon oxide film on the substrate, and the second processing provides material-2 having two or more silicon atoms per molecule onto the substrate, and then generates plasma while no reactant gas is introduced, thereby forming a double silicon compound on the substrate.

公开(公告)号：US10692741B2

公开(公告)日：2020-06-23

申请号：US15672119

申请日：2017-08-08

Applicant: ASM IP Holding B.V.

Inventor： Melvin Verbaas

IPC: H01L21/67 ,  C23C16/48 ,  H01L21/687 ,  C23C16/458 ,  H01J37/32

Abstract: A radiation shield and an assembly and a reactor including the radiation shield are disclosed. The radiation shield can be used to control heat flux from a susceptor heater assembly and thereby enable better control of temperatures across a surface of a substrate placed on a surface of the susceptor heater assembly.

公开(公告)号：US20200181770A1

公开(公告)日：2020-06-11

申请号：US16210922

申请日：2018-12-05

Applicant: ASM IP Holding B.V.

Inventor： Delphine Longrie ,  Fu Tang

IPC: C23C16/34 ,  H01L21/02 ,  C23C16/455

Abstract: A method of forming a structure including a silicon nitride overlying a titanium nitride layer is disclosed. The method includes forming the titanium nitride layer and the silicon nitride layer in the same reaction chamber—e.g., without a vacuum break—to mitigate oxidation of the titanium nitride layer that might otherwise occur.

公开(公告)号：US20200173020A1

公开(公告)日：2020-06-04

申请号：US16785263

申请日：2020-02-07

Applicant: ASM IP Holding B.V.

Inventor： Robert Huggare

IPC: C23C16/455 ,  H01L21/687 ,  C23C16/458 ,  H01J37/32 ,  H01L21/67 ,  H01L21/677 ,  C23C16/44

Abstract: The disclosure relates to a chemical deposition, treatment and/or infiltration apparatus for providing a chemical reaction on and/or in a surface of a substrate. The apparatus may have a top and a bottom reaction chamber part forming together a closable reaction chamber and an actuator constructed and arranged for moving the top and bottom reaction chamber parts with respect to each other from a closed position to an open position so as to allow access to an interior of the reaction chamber. A top substrate holder is connected to the top reaction chamber part to hold a substrate at least when the reaction chamber is in the open position and a bottom substrate holder is connected to the bottom reaction chamber part to hold the substrate when the reaction chamber is in the closed position.