Abstract:
An embodiment of a telecommunication transmitter/receiver device is provided. The transmitter device includes: means for providing a set of words, each word including a plurality of digital symbols; a first memory area for storing the set of words, the first memory area including a first sequence of memory locations each one for storing a symbol; a second memory area for storing a composite frame including a predetermined number of symbols, the second memory area including a second sequence of memory locations; conversion means for converting the set of words in the first memory area into the frame in the second memory area, the conversion means including reduction means for reducing each word by removing a set of symbols from the word according to a puncturing algorithm, and expansion means for expanding each word by adding a set of additional symbols to the word according to a repeating algorithm; and means for transmitting the frame. The first memory area and the second memory area have at least one memory location in common. The receiver device has a dual structure.
Abstract:
An electronic device includes a substrate provided with a passing opening and a MEMS device including an active surface wherein a portion of the MEMS device is integrated sensitive to chemical/physical variations of a fluid. The active surface of the MEMS device faces the substrate and is spaced therefrom, the sensitive portion being aligned to the opening. A protective package incorporates at least partially the MEMS device and the substrate, leaving at least the sensitive portion of the MEMS device, and the opening of the substrate exposed. A barrier element is positioned in an area which surrounds the sensitive portion to realize a protection structure for the MEMS device, so that the sensitive portion is free.
Abstract:
A device for stabilizing images acquired by a digital-image sensor includes a motion-sensing device, for detecting quantities correlated to pitch and yaw movements of the digital-image sensor, and a processing unit, connectable to the digital-image sensor for receiving a first image signal and configured for extracting a second image signal from the first image signal on the basis of the quantities detected by the motion-sensing device. The motion-sensing device includes a first accelerometer and a second accelerometer.
Abstract:
An embodiment of a non-volatile memory device is provided. The memory device includes a memory matrix comprising a plurality of memory cells, arranged according to a plurality of rows and a plurality of columns. The memory device further includes a plurality of word lines; each word line is associated with one respective row of said plurality and is connected to the memory cells of the row; the word lines are grouped into at least one packet. The memory device includes a row selector coupled to the word lines and adapted to selectively biasing them. The row selector includes, for each packet of word lines, a plurality of first paths, wherein each first path is adapted to apply a first biasing voltage to a corresponding word line of the packet depending on an operation to be performed on the memory cells connected to the corresponding word line. Each first path includes at least a first and a second selection transistors series-connected between a first terminal and a second terminal of the first path. The second terminal is coupled to the corresponding word line. The memory device further includes enabling means for commonly providing an enabling voltage to the first terminal of the first paths associated to a selected packet of word lines including a selected word line. The enabling voltage depends on the operation to be performed on the memory cells connected to the selected word line and is adapted to enable the execution of said operation. The memory device further includes selection means for selecting one among said plurality of first paths. the selected first path corresponding to the selected word line. The selection means are adapted to activate the first selection transistor of the selected first path in order to obtain the first biasing voltage from the enabling voltage by a voltage drop introduced by the first selection transistor; said selection means are further adapted to activate the second selection transistor of the selected first path in order to transfer the first biasing voltage provided by the first selection transistor onto the selected word line.
Abstract:
A non-volatile memory device integrated on a semiconductor substrate of a first type of conductivity comprising a matrix of non-volatile memory cells organized in rows, called word lines, and columns, called bit lines, the device including a plurality of equidistantly spaced active areas with the non-volatile memory cells integrated therein, each non-volatile memory cell having a source region, a drain region and a floating gate electrode coupled to a control gate electrode, a group of the memory cells sharing a common source line of a second type of conductivity, an implanted region of said second type of conductivity inside at least one of the plurality of active areas in electric contact with the common source line, and at least one source contact aligned and in electric contact with the implanted region.
Abstract:
A hosting structure of nanometric components is described comprising a substrate, a first multi-spacer level comprising a first plurality of spacers including first conductive spacers parallel to each other, and at least a second multi-spacer level realized above said first multi-spacer level and comprising a second plurality of spacers arranged transversally to said first plurality of spacers and including at least a lower discontinuous insulating layer and an upper layer, including in turn second conductive spacers. In particular, each pair of spacers of the second multi-spacer level defines with a spacer of the first multi-spacer level a plurality of nanometric hosting seats having at least a first and a second conduction terminal realized by portions of the first conductive spacers and of the second conductive spacers faced in the hosting seats. A method for manufacturing such a structure is also described.
Abstract:
Organometallic precursors may be utilized to form titanium silicon nitride films that act as heaters for phase change memories. By using a combination of TDMAT and TrDMASi, for example in a metal organic chemical vapor deposition chamber, a relatively high percentage of silicon may be achieved in reasonable deposition times. Two separate bubblers may be utilized to feed the two organometallic compounds in gaseous form to the deposition chamber so that the relative proportions of the precursors can be readily controlled.
Abstract:
A method of managing fails in a non-volatile memory device including an array of cells grouped in blocks of data storage cells includes defining in the array a first subset of user addressable blocks of cells, and a second subset of redundancy blocks of cells. Each block including at least one failed cell in the first subset is located during a test on wafer of the non-volatile memory device. Each block is marked as bad, and a bad block address table of respective codes is stored in a non-volatile memory buffer. At power-on, the bad block address table is copied from the non-volatile memory buffer to the random access memory. A block of memory cells of the first subset is verified as bad by looking up the bad block address table, and if a block is bad, then remapping access to a corresponding block of redundancy cells. A third subset of non-user addressable blocks of cells is defined in the array for storing the bad block address table of respective codes in an addressable page of cells of a block of the third subset. Each page of the third subset is associated to a corresponding redundancy block. If during the working life of the memory device a block of cells previously judged good in a test phase becomes failed, each block is marked as bad and the stored table in the random access memory is updated.
Abstract:
A wheeled machine that rakes lawns and other surfaces to remove leaves, pine needles and other lightweight debris and conveys this material directly into a standard size plastic bag for disposal or transport to a composting location.
Abstract:
A data processor unit includes at least two operation-execution units, each one adapted to receive input data, perform a respective operation on the input data and outputting output data resulting after applying said operation; the data processor unit further includes: a data storage unit including at least two individually-accessible memory devices adapted to store data; a programmable controller adapted to be programmed so as to execute a selected program; a first data routing circuit arrangement adapted to receive data from the at least two memory devices, from the programmable controller and from a second data routing circuit arrangement, and for selectively routing selected ones among the received data to the input of the operation-execution units; the second data routing circuit arrangement is adapted to receive the output data outputted by the operation-execution units and to selectively route the output data to the at least two memory devices, to the programmable controller, and to the first data routing circuit arrangement. The programmable controller is operatively coupled to the at least two operation-execution units, to the first and second data routing circuit arrangements, and to the at least two memory devices for controlling the operation thereof.