公开(公告)号：US20140340953A1

公开(公告)日：2014-11-20

申请号：US14451671

申请日：2014-08-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Kiyoshi KATO

IPC: G11C5/06 ,  G11C5/14 ,  H01L27/12 ,  G11C7/12

CPC classification number: G11C7/10 ,  G11C5/06 ,  G11C5/147 ,  G11C7/12 ,  G11C7/18 ,  G11C7/22 ,  G11C8/08 ,  G11C11/24 ,  G11C11/4097 ,  G11C16/0433 ,  G11C16/28 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L23/528 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/22 ,  H01L29/24 ,  H01L29/26 ,  H01L29/78 ,  H01L29/78603 ,  H01L29/7869 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An object of the present invention is to provide a semiconductor device combining transistors integrating on a same substrate transistors including an oxide semiconductor in their channel formation region and transistors including non-oxide semiconductor in their channel formation region. An application of the present invention is to realize substantially non-volatile semiconductor memories which do not require specific erasing operation and do not suffer from damages due to repeated writing operation. Furthermore, the semiconductor device is well adapted to store multivalued data. Manufacturing methods, application circuits and driving/reading methods are explained in details in the description.

公开(公告)号：US20140061639A1

公开(公告)日：2014-03-06

申请号：US14073902

申请日：2013-11-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Masashi TSUBUKU ,  Kosei NODA

IPC: H01L27/12

CPC classification number: H01L27/1255 ,  G09G3/20 ,  G09G3/2092 ,  G09G3/3233 ,  G09G3/3291 ,  G09G3/36 ,  G09G3/3648 ,  G09G2300/0439 ,  G09G2300/08 ,  G09G2300/0842 ,  G09G2310/0267 ,  G09G2310/0275 ,  G09G2310/0286 ,  G09G2310/08 ,  G11C19/184 ,  G11C19/28 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/7869 ,  H03K17/161 ,  H03K19/00315 ,  H03K19/096

Abstract: To reduce a leakage current of a transistor so that malfunction of a logic circuit can be suppressed. The logic circuit includes a transistor which includes an oxide semiconductor layer having a function of a channel formation layer and in which an off current is 1×10−13 A or less per micrometer in channel width. A first signal, a second signal, and a third signal that is a clock signal are input as input signals. A fourth signal and a fifth signal whose voltage states are set in accordance with the first to third signals which have been input are output as output signals.

Abstract translation: 为了减小晶体管的漏电流，可以抑制逻辑电路的故障。 逻辑电路包括晶体管，其包括具有沟道形成层的功能的氧化物半导体层，并且其中截止电流在沟道宽度中为每微米1×10-13A或更小。 作为时钟信号的第一信号，第二信号和第三信号被输入作为输入信号。 作为输出信号输出第四信号和第五信号，其电压状态根据输入的第一至第三信号而被设定。

公开(公告)号：US20140015868A1

公开(公告)日：2014-01-16

申请号：US13940788

申请日：2013-07-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Yoshiharu HIRAKATA ,  Hiroyuki MIYAKE

IPC: G09G3/36

CPC classification number: G09G3/3614 ,  G02F2001/13793 ,  G09G3/3648 ,  G09G2310/0205 ,  G09G2310/0218 ,  G09G2310/0235

Abstract: A liquid crystal display device capable of consuming less power and a method for driving the liquid crystal display device are provided. The liquid crystal display device includes a pixel portion, a light supply portion sequentially supplying lights of a plurality of hues to the pixel portion, a counter counting the number of frame periods, a signal generator determining timing of inverting the polarity of an image signal every plural consecutive frame periods by using data on the number of frame periods counted by the counter, and a controller inverting the polarity of the image signal in accordance with the timing. A plurality of pixels are provided in the pixel portion. The image signal whose polarity is inverted every plural frame periods is input to the plurality of pixels.

Abstract translation: 提供能够消耗较少功率的液晶显示装置和驱动液晶显示装置的方法。 液晶显示装置包括：像素部，向像素部顺序地供给多种色调的光的供光部，对帧周期数进行计数的计数器;确定每次图像信号的极性反转的定时 通过使用由计数器计数的帧周期数的数据和控制器根据定时反转图像信号的极性的多个连续帧周期。 像素部中设置有多个像素。 将极性在每个帧周期反转的图像信号输入到多个像素。

公开(公告)号：US20130321995A1

公开(公告)日：2013-12-05

申请号：US13962307

申请日：2013-08-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA

IPC: H05K7/00

CPC classification number: H04B1/1607 ,  A61B5/0002 ,  A61B5/0031 ,  A61B5/07 ,  A61B5/076 ,  A61B2560/0219 ,  A61B2562/166 ,  G06F19/00 ,  G06F19/3418 ,  G06Q50/22 ,  H01L23/60 ,  H01L23/66 ,  H01L27/13 ,  H01L2223/6677 ,  H04B13/005 ,  H05K1/118 ,  H05K7/00

Abstract: A wireless sensor device capable of constant operation without replacement of batteries. The wireless sensor device is equipped with a rechargeable battery and the battery is recharged wirelessly. Radio waves received at an antenna circuit are converted into electrical energy and stored in the battery. A sensor circuit operates with the electrical energy stored in the battery, and acquires information. Then, a signal containing the information acquired is converted into radio waves at the antenna circuit, whereby the information can be read out wirelessly.

Abstract translation: 一种无需更换电池即可持续运行的无线传感器。 无线传感器设备配有可充电电池，电池以无线方式充电。 在天线电路处接收的无线电波被转换成电能并存储在电池中。 传感器电路与存储在电池中的电能一起工作，并获取信息。 然后，将包含所获取的信息的信号在天线电路处转换为无线电波，由此可以无线地读出信息。

公开(公告)号：US20130308073A1

公开(公告)日：2013-11-21

申请号：US13888480

申请日：2013-05-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA

IPC: H01L27/32 ,  G02F1/1368

CPC classification number: H01L27/1225 ,  G02F1/13338 ,  G02F1/1368 ,  G02F2201/58 ,  H01L27/3227 ,  H01L27/323

Abstract: A touch panel whose power consumption can be reduced is provided, and an increase in the manufacturing cost of the touch panel is prevented. A photosensor which includes a light-receiving element including a non-single-crystal semiconductor layer between a pair of electrodes and a transistor including an oxide semiconductor layer in a channel formation region is provided. A touch panel which includes a plurality of pixels and the photosensor adjacent to at least one of the plurality of pixels is provided. Each of the plurality of pixels includes a pair of terminals. One of the pair of terminals is a reflective conductive film. Alternatively, each of the pair of terminals is a light-transmitting conductive film.

公开(公告)号：US20130215351A1

公开(公告)日：2013-08-22

申请号：US13848234

申请日：2013-03-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Jun KOYAMA ,  Satoshi TERAMOTO

IPC: G02F1/1368

CPC classification number: G02F1/1368 ,  G02B27/017 ,  G02B2027/0138 ,  G02F1/133553 ,  G02F1/13454 ,  G02F2203/02 ,  H01L27/124 ,  H01L29/41733

Abstract: There is disclosed an active matrix reflective liquid crystal display panel on which an active matrix circuit is integrated with peripheral driver circuits. Metal lines in the peripheral driver circuits are formed simultaneously with pixel electrodes. Thus, neither the process sequence nor the structure is complicated.

Abstract translation: 公开了一种有源矩阵反射型液晶显示面板，其中有源矩阵电路与外围驱动电路集成。 外围驱动电路中的金属线与像素电极同时形成。 因此，处理顺序和结构都不复杂。

公开(公告)号：US20130147519A1

公开(公告)日：2013-06-13

申请号：US13761302

申请日：2013-02-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA ,  Kengo AKIMOTO ,  Masashi TSUBUKU

IPC: H03K19/094

CPC classification number: H03K19/094 ,  H01L27/0883 ,  H01L27/1225 ,  H03K19/09407 ,  H03K19/09421 ,  H03K19/096

Abstract: An object is to apply a transistor using an oxide semiconductor to a logic circuit including an enhancement transistor. The logic circuit includes a depletion transistor 101 and an enhancement transistor 102. The transistors 101 and 102 each include a gate electrode, a gate insulating layer, a first oxide semiconductor layer, a second oxide semiconductor layer, a source electrode, and a drain electrode. The transistor 102 includes a reduction prevention layer provided over a region in the first oxide semiconductor layer between the source electrode and the drain electrode.

Abstract translation: 目的是将使用氧化物半导体的晶体管施加到包括增强晶体管的逻辑电路。 逻辑电路包括耗尽晶体管101和增强晶体管102.晶体管101和102各自包括栅电极，栅极绝缘层，第一氧化物半导体层，第二氧化物半导体层，源电极和漏电极 。 晶体管102包括在源电极和漏极之间的第一氧化物半导体层中的区域上设置的还原防止层。