公开(公告)号：US5618216A

公开(公告)日：1997-04-08

申请号：US459033

申请日：1995-06-02

Applicant: Michael D. Potter

Inventor： Michael D. Potter

IPC: H01J9/39 ,  H01J1/304 ,  H01J3/02 ,  H01J7/18 ,  H01J9/02 ,  H01J9/40

CPC classification number: H01J9/025 ,  H01J3/022 ,  H01J2201/30423 ,  H01J2209/385

Abstract: A field emission device (10) is made with a lateral emitter (100) substantially parallel to a substrate (20) and with a simplified anode stucture (70). The lateral-emitter field-emission device has a thin-film emitter cathode (100) which has a thickness not exceeding several hundred angstroms and has an emitting blade edge or tip (110) having a small radius of curvature. The anode's top surface is precisely spaced apart from and below the plane of the lateral emitter and receives electrons emitted by field emission from the blade edge or tip of the lateral-emitter cathode, when a suitable bias voltage is applied. A fabrication process is disclosed using process steps (S1-S18) similar to those of semiconductor integrated circuit fabrication to produce the novel devices and their arrays. Various embodiments of the fabrication process allow the use of conductive or insulating substrates (20) and allow fabrication of devices having various functions and complexity. The anode (70) is simply fabricated, without the use of prior-art processes which formed a spacer made by a conformal coating. In a preferred fabrication process for the simplified anode device, the following steps are performed: an anode film (70) is deposited; an insulator film (90) is deposited over the anode film; an ultra-thin conductive emitter film (100) is deposited over the insulator and patterned; a trench opening (160) is etched through the emitter and insulator, stopping at the anode film, thus forming and automatically aligning an emitting edge of the emitter; and means are provided for applying an electrical bias to the emitter and anode, sufficient to cause field emission of electrons from the emitting edge of the emitter to the anode. The anode film may comprise a phosphor (75) for a device specially adapted for use in a field emission display. The fabrication process may also include steps to deposit additional insulator films (130) and to deposit additional conductive films for control electrodes (140), which are automatically aligned with the emitter blade edge or tip (110).

公开(公告)号：US5604399A

公开(公告)日：1997-02-18

申请号：US470320

申请日：1995-06-06

Applicant: Jack A. Mandelman ,  Michael D. Potter

Inventor： Jack A. Mandelman ,  Michael D. Potter

IPC: H01J9/02 ,  H01J1/304 ,  H01J3/02 ,  H01J1/62 ,  H01J1/42 ,  H01J1/46 ,  H01J63/04

CPC classification number: H01J3/022

Abstract: A lateral field emission device and method of fabricating the device which maximizes gate control of the cathode emitter electric field strength is disclosed. Gate control increases when the position of the gate edge is optimized with respect to the position of the emitter tip. Maximum control is achieved if the gate extends a distance beyond the emitter in the direction of the anode. Preferably, the displacement of the gate edge from the emitter tip is one half the cathode tip-anode distance for optimum control. The high gain device of the present invention provides improved transconductance.

Abstract translation: 公开了一种制造使阴极发射极电场强度的栅极控制最大化的器件的横向场致发射器件和方法。 当栅极边缘的位置相对于发射极尖端的位置被优化时，栅极控制增加。 如果栅极沿阳极方向延伸超过发射极的距离，则可实现最大的控制。 优选地，栅极边缘从发射极尖端的位移是用于最佳控制的阴极尖端 - 阳极距离的一半。 本发明的高增益器件提供了改进的跨导。

公开(公告)号：US5597518A

公开(公告)日：1997-01-28

申请号：US333450

申请日：1994-11-02

Applicant: Paul A. Lovoi

Inventor： Paul A. Lovoi

IPC: H01J3/02 ,  H01J9/14 ,  H01J9/18 ,  H01J17/49 ,  H01J29/02 ,  H01J29/08 ,  H01J29/46 ,  H01J31/12 ,  H01J61/30 ,  B29D11/00

CPC classification number: H01J61/30 ,  H01J17/49 ,  H01J29/028 ,  H01J29/085 ,  H01J29/467 ,  H01J3/022 ,  H01J31/123 ,  H01J31/126 ,  H01J31/127 ,  H01J9/14 ,  H01J9/185 ,  H01J2329/8625 ,  H01J2329/863 ,  H01J2329/864 ,  H01J2329/8645 ,  Y10S264/91

Abstract: A face plate for a cathode ray tube display is produced by a method in which small holes are formed through a sheet of unfired ceramic tape. The holes are arranged in a desired pattern for the location of pixel dots. The holes are filled with generally transparent glass to form plugs in the desired pattern. The ceramic tape is cured to a hardened state by firing to an appropriate temperature. Each plug is coated at an inner, anode side of the face plate with phosphor of appropriate color.

Abstract translation: 通过一种未烧结的陶瓷带形成小孔的方法制造阴极射线管显示器的面板。 孔以所需的图案布置以用于像素点的位置。 这些孔填充有通常透明的玻璃以形成所需图案的插塞。 陶瓷带通过焙烧至合适的温度而固化至硬化状态。 每个塞子用适当颜色的荧光粉涂覆在面板的内阳极侧。

公开(公告)号：US5589731A

公开(公告)日：1996-12-31

申请号：US12542

申请日：1993-02-01

Applicant: Theodore S. Fahlen ,  Robert M. Duboc, Jr. ,  Paul A. Lovoi

Inventor： Theodore S. Fahlen ,  Robert M. Duboc, Jr. ,  Paul A. Lovoi

IPC: H01J3/02 ,  H01J9/14 ,  H01J9/18 ,  H01J17/49 ,  H01J29/02 ,  H01J29/08 ,  H01J29/46 ,  H01J31/12 ,  H01J61/30 ,  H01J29/04

CPC classification number: H01J61/30 ,  H01J17/49 ,  H01J29/028 ,  H01J29/085 ,  H01J29/467 ,  H01J3/022 ,  H01J31/123 ,  H01J31/126 ,  H01J31/127 ,  H01J9/14 ,  H01J9/185 ,  H01J2329/8625 ,  H01J2329/863 ,  H01J2329/864 ,  H01J2329/8645 ,  Y10S264/91

Abstract: A flat panel device contains a faceplate, a backplate, a light-emitting mechanism, and a spacer. The faceplate is connected to the backplate to form a sealed enclosure. The spacer is situated within the enclosure and supports the two plates against forces acting towards the enclosure. The spacer can take various forms and can be constituted with various materials. In one embodiment, the spacer includes a spacer wall formed with multiple sheets of laminated material consisting of ceramic, glass-ceramic, ceramic reinforced glass, devitrifying glass, or metal coated with electrical insulation. In another embodiment, the spacer includes a spacer wall having a surface that follows a non-straight path adjacent the faceplate. In yet another embodiment, the spacer is a spacer structure through which a plurality of holes extends. The light-emitting mechanism is typically implemented with an electron-emitting cathode and light-emissive material situated over the faceplate. The cathode may be a thermionic cathode or a field emitter cathode.

Abstract translation: 平板装置包括面板，背板，发光机构和间隔件。 面板连接到背板以形成密封的外壳。 间隔件位于外壳内并且支撑两个板抵抗作用于外壳的力。 间隔件可采用各种形式，并可由各种材料构成。 在一个实施例中，间隔件包括形成有由陶瓷，玻璃陶瓷，陶瓷增强玻璃，失透玻璃或涂有电绝缘体的金属组成的多层叠层材料的间隔壁。 在另一个实施例中，间隔件包括间隔壁，该间隔壁具有跟随与面板相邻的非直线路径的表面。 在另一个实施例中，间隔件是多个孔延伸穿过的间隔结构。 发光机构通常用位于面板上方的电子发射阴极和发光材料来实现。 阴极可以是热离子阴极或场致发射极阴极。

公开(公告)号：US5587586A

公开(公告)日：1996-12-24

申请号：US538512

申请日：1995-10-03

Applicant: Pieter Kruit

Inventor： Pieter Kruit

IPC: H01J37/073 ,  H01J3/02

CPC classification number: H01J37/073 ,  H01J3/021 ,  H01J2237/06341

Abstract: The source can be readily aligned and the energy spread of the emitted bean can be controlled to an arbitrarily small value by variation of the voltage. Since no high voltage is present within the emissive part of the electron source, a very compact electron source can be realized.

Abstract translation: 可以容易地对准源并且通过电压的变化将发射的豆的能量扩散控制到任意小的值。 由于在电子源的发射部分内不存在高电压，所以可以实现非常紧凑的电子源。

公开(公告)号：US5580467A

公开(公告)日：1996-12-03

申请号：US509058

申请日：1995-07-31

Applicant: Jong-min Kim

Inventor： Jong-min Kim

IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02

CPC classification number: H01J9/025 ,  H01J3/022

Abstract: A method of fabricating a field emission micro-tip which can emit electrons uniformly and can be fabricated at a high yield when applied to a large device. The micro-tip is fabricated such that when the adhesive layer and mask are instantaneously etched the tungsten micro-tips are lifted upwardly due to the differences in internal stress and etching rates of the tungsten cathode, the lower adhesive layer and the upper mask layer. The sharpness of the micro-tip is easily adjusted depending on the shape of the micro-tip. Also, since the internal stress of tungsten and characteristics of the BOE method are utilized throughout the fabricating process, the reproducibility is ensured. Moreover, since multiple tips are fabricated, the output current can be manipulated in a wide range of nanoamperes to milliamperes. Since tungsten is used for fabricating the micro-tips, excellent properties are obtained with regard to strength, oxidation, work function, and electrical, chemical and mechanical durability.

Abstract translation: 一种制造场发射微尖端的方法，其可以均匀地发射电子，并且当应用于大器件时可以以高产率制造。 制造微尖端，使得当粘合剂层和掩模被瞬时蚀刻时，由于钨阴极，下部粘合剂层和上部掩模层的内部应力和蚀刻速率的差异，钨微尖端向上提起。 根据微尖端的形状容易地调节微尖端的锐度。 此外，由于在整个制造过程中利用了钨的内部应力和BOE方法的特性，因此确保了再现性。 此外，由于制造了多个尖端，所以输出电流可以在宽范围的纳米至毫安之间进行操作。 由于钨用于制造微型尖端，因此在强度，氧化，功能和电气，化学和机械耐久性方面都获得了优异的性能。

公开(公告)号：US5578906A

公开(公告)日：1996-11-26

申请号：US416120

申请日：1995-04-03

Applicant: Robert T. Smith

Inventor： Robert T. Smith

IPC: H01J29/04 ,  G09G3/22 ,  H01J1/304 ,  H01J3/02 ,  H01J31/12 ,  H04N5/66 ,  G09G3/10

CPC classification number: G09G3/22 ,  H01J3/022 ,  H01J2201/319 ,  H01J2329/00

Abstract: A field emission device (100) having an electron emitter (101), for emitting electrons, an extraction electrode (102) proximally disposed with respect to the electron emitter (101), an anode (103) for collecting some of any emitted electrons is formed. Anode (103) is distally disposed with respect to the electron emitter (101). A transient current source (110) is operably coupled between the electron emitter (101) and a reference potential (107). Transient current source (110) provides a transient current to the electron emitter (101) to enhance response time for emission of electrons from the electron emitter (101) of the field emission device (100). A controlling input line (111) is provided for current controlling signals to the transient current source (110) with the controlling input line (111) being operably coupled to the transient current source (110).

Abstract translation: 具有用于发射电子的电子发射体（101）的场发射器件（100），相对于电子发射器（101）近端设置的引出电极（102），用于收集一些任何发射电子的阳极（103） 形成。 阳极（103）相对于电子发射体（101）向远侧设置。 瞬态电流源（110）可操作地耦合在电子发射器（101）和参考电位（107）之间。 瞬态电流源（110）向电子发射器（101）提供瞬态电流，以增强从场致发射器件（100）的电子发射器（101）发射电子的响应时间。 控制输入​​线（111）被提供用于电流控制到瞬态电流源（110）的信号，控制输入线（111）可操作地耦合到瞬态电流源（110）。

公开(公告)号：US5578185A

公开(公告)日：1996-11-26

申请号：US383408

申请日：1995-01-31

Applicant: David L. Bergeron ,  John M. Macaulay ,  Roger W. Barton ,  Jeffrey D. Morse

Inventor： David L. Bergeron ,  John M. Macaulay ,  Roger W. Barton ,  Jeffrey D. Morse

IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  C25D5/02

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319

Abstract: A method is provided for creating gated filament structures for a field emission display. A multi-layer structure is provided that includes a substrate, an insulating layer, a metal gate layer positioned on a top surface of the insulating layer and a gate encapsulation layer positioned on a top surface of the metal gate layer. A plurality of gates are provided and define a plurality of apertures on the top of the insulating layer. A plurality of spacers are formed in the apertures at their edges on the top surface of the insulating layer. The spacers are used as masks for etching the insulating layer and form a plurality of pores in the insulating layer. The pores are plated with a filament material to create a plurality of filaments. The pores can be overplated to create the plurality of filaments. The filaments are vertically self-aligned in the pores.

Abstract translation: 提供了一种用于产生用于场致发射显示器的门控灯丝结构的方法。 提供了一种多层结构，其包括基板，绝缘层，位于绝缘层的顶表面上的金属栅极层和位于金属栅极层顶表面上的栅极封装层。 提供多个栅极并且在绝缘层的顶部上限定多个孔。 在绝缘层的顶表面上的边缘处的孔中形成多个间隔物。 间隔物用作蚀刻绝缘层并在绝缘层中形成多个孔的掩模。 用细丝材料电镀细孔以产生多根长丝。 孔可以被过度铺展以产生多根细丝。 细丝在孔中垂直自对准。

公开(公告)号：US5552659A

公开(公告)日：1996-09-03

申请号：US269312

申请日：1994-06-29

Applicant: John M. Macaulay ,  Christopher J. Spindt ,  Patrick A. Corcoran ,  Lee H. Veneklasen

Inventor： John M. Macaulay ,  Christopher J. Spindt ,  Patrick A. Corcoran ,  Lee H. Veneklasen

IPC: H01J3/02 ,  H01J1/02

CPC classification number: H01J3/022 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2329/00

Abstract: An electron emitter contains a gate layer (38), an underlying dielectric layer (36), an intermediate non-insulating layer (34) situated below the dielectric layer, and a lower non-insulating region (32) situated below the intermediate non-insulating layer. A multiplicity of electron-emissive particles (42) are situated over the non-insulating region at the bottom of an opening (40) extending through the three layers. The ratio of the thickness of the dielectric layer to the thickness of the intermediate non-insulating layer is in the range of 1:1 to 4:1, while the ratio of the mean diameter of the opening to the thickness of the intermediate non-insulating layer is in the range 1:1 to 10:1. The presence of the intermediate non-insulating layer improves the collimation of the beam of electrons emitted from the electron-emissive elements. The electron emitter is manufactured according to a simple, readily controllable process.

Abstract translation: 电子发射器包括栅极层（38），下面的介电层（36），位于电介质层下面的中间非绝缘层（34）和位于中间非绝缘层下面的下部非绝缘区域（32） 绝缘层。 多个电子发射颗粒（42）位于延伸穿过三层的开口（40）底部的非绝缘区域的上方。 介电层的厚度与中间非绝缘层的厚度之比在1：1至4：1的范围内，而开口的平均直径与中间非绝缘层的厚度之比 绝缘层的范围为1：1至10：1。 中间非绝​​缘层的存在改善了从电子发射元件发射的电子束的准直。 电子发射器是根据简单易操控制造的。

公开(公告)号：US5528108A

公开(公告)日：1996-06-18

申请号：US321181

申请日：1994-09-22

Applicant: Ralph Cisneros

Inventor： Ralph Cisneros

IPC: H01J21/10 ,  H01J1/304 ,  H01J3/02 ,  G09G3/10

CPC classification number: H01J3/022

Abstract: A field emission device (10) has an anode (18) that is used to attract electrons emitter by an emitter (13). An inductor (19) is coupled in series between the anode (18) and a voltage source (21) in order to prevent arcing between the anode (18) and the emitter (13) of the field emission device (10).

Abstract translation: 场发射器件（10）具有用于通过发射极（13）吸引电子发射极的阳极（18）。 电感器（19）串联连接在阳极（18）和电压源（21）之间，以防止场致发射器件（10）的阳极（18）和发射极（13）之间的电弧。