公开(公告)号：US5528098A

公开(公告)日：1996-06-18

申请号：US319402

申请日：1994-10-06

Applicant: Lawrence N. Dworsky ,  James E. Jaskie

Inventor： Lawrence N. Dworsky ,  James E. Jaskie

IPC: H01J31/12 ,  H01J1/304 ,  H01J3/02 ,  H01J1/02

CPC classification number: H01J3/022 ,  H01J2201/319 ,  H01J2329/00

Abstract: An electron source is formed to have a redundant conductor extraction grid (17) and redundant column conductor (38, 39). Grid (17) has a plurality of conductor strips (21, 22) that overlay the column conductors (38, 39). When one conductor strip (21, 22) of the grid (17) is shorted to an underlying conductor, the non-shorted conductor remains usable. Similarly, the column conductors (38, 39) each have a plurality of column conductor strips (14, 25, 41, 42) that underlie the grid (17). When one column conductor strip (14, 25, 41, 42) is shorted to the grid (17), the non-shorted column conductor strip remains usable.

Abstract translation: 电子源形成为具有冗余导体提取栅格（17）和冗余列导体（38,39）。 格栅（17）具有覆盖列导体（38,39）的多个导体条（21,22）。 当格栅（17）的一个导体条（21,22）短接到下面的导体时，非短路导体保持可用。 类似地，列导体（38,39）各自具有位于格栅（17）下面的多个列导体条（14,25,41,42）。 当一个列导体条（14,25,41,42）与栅极（17）短路时，非短路列导体条保持可用。

公开(公告)号：US5514937A

公开(公告)日：1996-05-07

申请号：US185347

申请日：1994-01-24

Applicant: Robert C. Kane ,  Robert T. Smith

Inventor： Robert C. Kane ,  Robert T. Smith

IPC: H01J1/304 ,  G09G3/22 ,  H01J3/02 ,  H01J37/073 ,  G09G3/10

CPC classification number: H01J3/022 ,  G09G3/22 ,  G09G2300/08 ,  H01J2201/319

Abstract: An electron emission device including an array of microelectronic field emission devices, each with an integrally formed capacitance, a plurality of switches, a weighting level detector, and data storage and weighting structure. In one operational method, the field emission device electron current emission is characterized and a weighting factor is calculated and coupled into the data storage and weighting means so as to provide electron emission device electron emission current in accordance with a desired emission level as prescribed by a data input signal and notwithstanding variations in electron current emission which may be present due to device fabrication.

Abstract translation: 一种电子发射装置，包括具有整体形成的电容的微电子场发射装置的阵列，多个开关，加权电平检测器和数据存储和加权结构。 在一种操作方法中，场发射器件电子发射电流被表征，并且计算加权因子并耦合到数据存储和加权装置中，以便根据由a的规定的期望的发射电平提供电子发射装置的电子发射电流 数据输入信号，尽管由于器件制造而可能存在电子发射的变化。

公开(公告)号：US5502347A

公开(公告)日：1996-03-26

申请号：US319403

申请日：1994-10-06

Applicant: Lawrence N. Dworsky ,  James E. Jaskie

Inventor： Lawrence N. Dworsky ,  James E. Jaskie

IPC: H01J9/02 ,  G09F9/313 ,  H01J1/304 ,  H01J3/02 ,  H01J1/02

CPC classification number: H01J3/022 ,  H01J2201/319 ,  H01J2329/00

Abstract: A display device (10) positions emitters (34,36,37,38,41,42,43,44,46, and 47) equidistant from a meander conductor (26). The meander conductor (26) is formed with a pattern that facilitates such equidistant placement. The equidistant placement results in approximately equal ballast resistor values for each emitter (34,36,37,38,41,42,43,44,46, and 47).

Abstract translation: 显示装置（10）将与曲折导体（26）等距的发射器（34,36,37,38,41,42,43,44,46和47）定位。 曲折导体（26）形成有促进这种等距放置的图案。 等距放置导致每个发射极大致相等的镇流电阻值（34,36,37,38,41,42,43,44,46和47）。

公开(公告)号：US5494179A

公开(公告)日：1996-02-27

申请号：US275354

申请日：1994-07-15

Applicant: Yoshikazu Hori ,  Keisuke Koga

Inventor： Yoshikazu Hori ,  Keisuke Koga

IPC: H01J1/304 ,  H01J9/02 ,  B44C1/22

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/319

Abstract: The invention is a field-emission element having a cathode with a sharp apex and a gate with an aperture diameter less than 1 .mu.m that is fabricated by covering a silicon substrate with a silicon oxide layer, forming an etching mask of 1.0 .mu.m diameter from a silicon oxide layer by photolithography, wet-etching the etching mask to form a minute etching mask of less diameter, dry etching the substrate to form a cylindrical solid structure, followed by anisotropic etching to form a couple of minute conical-shaped structures facing each other and connected by their respective tops, vacuum evaporating around the minute structures an insulating layer and thereon a conducting layer for use as a gate electrode, and etching the minute structure to lift off the upper part of the minute conical shaped structures.

Abstract translation: 本发明是一种场发射元件，其具有具有尖锐顶点的阴极和具有小于1μm的孔径的栅极，其通过用硅氧化物层覆盖硅衬底制成，形成1.0μm直径的蚀刻掩模 通过光刻从氧化硅层湿式蚀刻蚀刻掩模以形成较小直径的微小蚀刻掩模，干蚀刻基板以形成圆柱形固体结构，随后进行各向异性蚀刻以形成面对的微小锥形结构 彼此连接并通过其各自的顶部连接，在微小结构周围蒸发真空绝缘层，并在其上形成用作栅电极的导电层，并且蚀刻微小结构以剥离微小锥形结构的上部。

公开(公告)号：US5482486A

公开(公告)日：1996-01-09

申请号：US266465

申请日：1994-06-27

Applicant: Pierre Vaudaine ,  Brigitte Montmayeul ,  Michel Borel

Inventor： Pierre Vaudaine ,  Brigitte Montmayeul ,  Michel Borel

IPC: H01J9/02 ,  H01J9/42

CPC classification number: H01J9/025 ,  H01J2201/319

Abstract: A method for forming a microtip electron source includes the steps of forming a first microtip electron source using a mask, determining deviations in the structure of the first microtip electron source from a structure which should theoretically have been obtained using the first mask, and then correcting the first mask used during fabrication of the first microtip electron source that are designed to generate additional deviations that compensate for the effects upon performance of the deviations determined in the first microtip electron source when subsequent microtip electron sources are fabricated using the mask.

Abstract translation: 用于形成微尖端电子源的方法包括以下步骤：使用掩模形成第一微尖端电子源，从理论上使用第一掩模获得的结构确定第一微尖电子源的结构偏差，然后校正 在制造第一微尖端电子源期间使用的第一掩模被设计成产生额外的偏差，其补偿当使用掩模制造后续微尖端电子源时在第一微尖端电子源中确定的偏差的影响。

公开(公告)号：US5142184B1

公开(公告)日：1995-11-21

申请号：US47769590

申请日：1990-02-09

Applicant: MOTOROLA INC

Inventor： KANE ROBERT C

IPC: H01J9/02 ,  H01J1/304 ,  H01J3/02 ,  H01J7/44 ,  H01J19/24 ,  H01J21/10 ,  H01J31/12 ,  H01J1/16

CPC classification number: H01J7/44 ,  H01J3/022 ,  H01J2201/319

公开(公告)号：US5462467A

公开(公告)日：1995-10-31

申请号：US118490

申请日：1993-09-08

Applicant: John M. Macaulay ,  Peter C. Searson ,  Robert M. Duboc, Jr. ,  Christopher J. Spindt

Inventor： John M. Macaulay ,  Peter C. Searson ,  Robert M. Duboc, Jr. ,  Christopher J. Spindt

IPC: H01J1/304 ,  H01J3/02 ,  H01J9/02

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319 ,  Y10T428/2973 ,  Y10T428/298

Abstract: A field-emission structure suitable for large-area flat-panel televisions centers around an insulating porous layer (24A) that overlies a lower conductive region (22) situated over insulating material of a supporting substrate (20). Electron-emissive filaments (30) occupy pores (28) extending through the porous layer. A conductive gate layer (34A) through which openings (36) extend at locations centered on the filaments typically overlies the porous layer. Cavities (38) are usually provided in the porous layer along its upper surface at locations likewise centered on the filaments.In fabricating the structure, the pores are preferably formed by etching charged-particle tracks. Electrochemical deposition is employed to selectively create the filaments in the pores. Self-alignment of the gate openings to the filaments is achieved with charged-particle track etching and/or further electrochemical processing.

Abstract translation: 适用于大面积平板电视的场发射结构围绕位于位于支撑衬底（20）的绝缘材料之上的下导电区域（22）的绝缘多孔层（24A）周围。 电子发射丝（30）占据延伸穿过多孔层的孔（28）。 开口（36）通过所述导电栅极层（34A）延伸穿过长丝的位置，通常覆盖在多孔层上。 通常在多孔层中沿着其上表面在同样位于细丝上的位置处设置空腔（38）。 在制造结构时，优选通过蚀刻带电粒子迹线形成孔。 使用电化学沉积来选择性地在孔中产生细丝。 通过带电粒子轨迹蚀刻和/或进一步的电化学处理实现了栅极开口对长丝的自对准。

公开(公告)号：US5410218A

公开(公告)日：1995-04-25

申请号：US77181

申请日：1993-06-15

Applicant: Glen F. Hush

Inventor： Glen F. Hush

IPC: G09G3/20 ,  G09G3/22 ,  H01J31/12 ,  G09G3/10

CPC classification number: G09G3/22 ,  H01J31/127 ,  G09G2300/08 ,  G09G2310/0248 ,  G09G3/2011 ,  H01J2201/319

Abstract: A Field Emission Display ("FED") is disclosed having an array of display grids formed within a region of a semiconductor substrate. The array is defined by a number of rows and a number of columns. Further, a multiplicity of field emitter tips are incorporated for driving the array, each of the tips being coupled with a display grid of the array. To select any row of the array, a row select switch is employed. The row select switch is preferably formed outside the region of the substrate. In operation, a row is selected when a row control signal is received by the row select switch. Further, a column select switch for selecting any of said columns is also employed, formed outside the region. In operation, a column is selected when a column control signal is received by the column select switch. Moreover, a plurality of constant current sources, formed outside the region, are provided for generating a constant current to each of the tips. Each of the constant current sources is enabled by the column control switch. Thus, the number of constant current sources is equal to the number of columns. Utilizing this configuration, a first tip drives a first grid of the array after the row select switch and the column select switch associated with the first tip are enabled.

Abstract translation: 公开了具有形成在半导体衬底的区域内的显示栅格阵列的场致发射显示器（“FED”）。 数组由多行和多列组成。 此外，并入多个场发射器尖端以驱动阵列，每个尖端与阵列的显示栅格耦合。 要选择阵列的任何行，采用行选择开关。 行选择开关优选形成在基板的区域的外侧。 在操作中，当行选择开关接收到行控制信号时，选择一行。 此外，还采用用于选择任何列的列选择开关，形成在该区域之外。 在操作中，当列选择开关接收到列控制信号时，选择列。 此外，形成在区域外部的多个恒定电流源用于产生每个尖端的恒定电流。 每个恒流源由列控制开关使能。 因此，恒定电流源的数量等于列数。 利用该配置，在行选择开关和与第一尖端相关联的列选择开关被使能之后，第一端头驱动阵列的第一栅格。

公开(公告)号：US5402041A

公开(公告)日：1995-03-28

申请号：US37806

申请日：1993-03-26

Applicant: Takao Kishino ,  Koichi Nishiuchi ,  Shigeo Itoh

Inventor： Takao Kishino ,  Koichi Nishiuchi ,  Shigeo Itoh

IPC: H01J29/04 ,  G09G3/22 ,  H01J1/304 ,  H01J29/96 ,  H01J31/12 ,  G09G3/10

CPC classification number: H01J1/3042 ,  G09G3/22 ,  H01J31/127 ,  G09G2300/08 ,  G09G2300/0809 ,  G09G2300/0842 ,  H01J2201/319

Abstract: A field emission cathode capable of permitting a display to be carried out at increased density and a circuit incorporated therein together with an FEC to exhibit satisfactory characteristics and being driven according to a static drive system. A plurality of control lines and data wires are arranged in a matrix-like manner on a monocrystalline Si substrate, to thereby form element regions on the substrate. The element regions each are formed therein with a circuit element, on which a field emission section is laminated. The circuit elements each include a first transistor connected to both data wire and control wire and functioning as a switching element, a capacitor serving as a circuit for storing therein a signal input thereto, and a second transistor for amplifying a signal input thereto and feeding it to the field emission section.

Abstract translation: 能够以更高密度进行显示的场致发射阴极以及与FEC结合的电路，以表现出令人满意的特性，并根据静态驱动系统进行驱动。 多个控制线和数据线以矩阵状的方式排列在单晶Si衬底上，从而在衬底上形成元件区。 元件区域各自形成有电路元件，层叠有场致发射部。 电路元件各自包括连接到数据线和控制线两者并用作开关元件的第一晶体管，用作在其中存储输入信号的电路的电容器和用于放大输入到其中的信号并将其馈送的第二晶体管 到场发射部分。

公开(公告)号：US5345141A

公开(公告)日：1994-09-06

申请号：US45407

申请日：1993-03-29

Applicant: Curtis D. Moyer ,  John Song ,  James E. Jaskie

Inventor： Curtis D. Moyer ,  John Song ,  James E. Jaskie

IPC: H01J9/02 ,  H01J1/304 ,  H01J9/14 ,  H01J9/22 ,  H01J29/04 ,  H01J29/18 ,  H01J31/12 ,  H01J1/62

CPC classification number: H01J1/3042 ,  H01J31/127 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319

Abstract: A single substrate, vacuum fluorescent display including a first layer of electrically conductive material positioned on a supporting substrate and a light emitting layer including phosphor positioned on the first layer. A second layer of electrically conductive material is supported on the substrate and electrically insulated from the first layer. An electron emitting layer of low work function material is positioned on the second layer and further positioned so that emitted electrons strike the light emitting layer. Since both the electron emitting and the light emitting layers are supported on the substrate, an encapsulating window is simple and easy to construct. Integrated drivers are optionally formed in the supporting substrate.

Abstract translation: 单个基板，真空荧光显示器，其包括位于支撑基板上的第一导电材料层和包含位于第一层上的荧光体的发光层。 第二层导电材料被支撑在基底上并与第一层电绝缘。 低功函数材料的电子发射层位于第二层上，并进一步定位成使得发射的电子撞击发光层。 由于电子发射层和发光层都被支撑在基板上，所以封装窗口简单易于构造。 集成驱动器可选地形成在支撑基板中。