ELECTRODE CATALYST LAYER, MEMBRANE ELECTRODE ASSEMBLY, AND POLYMER ELECTROLYTE FUEL CELL

    公开(公告)号:US20230275239A1

    公开(公告)日:2023-08-31

    申请号:US18122438

    申请日:2023-03-16

    Applicant: TOPPAN INC.

    CPC classification number: H01M4/926 H01M8/1018 H01M8/1065 H01M2008/1095

    Abstract: An object is to provide an electrode catalyst layer, a membrane electrode assembly, and a polymer electrolyte fuel cell that can suppress decrease in durability of the membrane electrode assembly and decrease in power generation performance of the polymer electrolyte fuel cell by suppressing crack generation in the electrode catalyst layer. An electrode catalyst layer according to one aspect of the present invention is an electrode catalyst layer including at least: a catalytic substance; aggregates of polymer electrolytes; and polymer electrolyte fibers. In the electrode catalyst layer, an amount of phosphorus and an amount of platinum defined via elemental analysis by energy dispersive X-ray spectroscopy (EDX) satisfy a following equation (1). 0

    RANGE IMAGING DEVICE AND RANGE IMAGING APPARATUS

    公开(公告)号:US20230262357A1

    公开(公告)日:2023-08-17

    申请号:US18306365

    申请日:2023-04-25

    Applicant: TOPPAN Inc.

    CPC classification number: H04N25/71 H04N25/77

    Abstract: A range imaging device includes a semiconductor substrate, and a pixel circuit formed at a surface of the substrate and including a photoelectric conversion device, charge storages, transfer MOS transistors, and charge drainage MOS transistors. The conversion device has rectangular shape on the surface of the conversion device, the transfer transistors include 2M transfer transistors, the charge drainage transistors include 2N charge drainage transistors, where M is an integer greater than or equal to 2, and N is an integer greater than or equal to 1, M transfer transistors are positioned on each long side of the conversion device symmetrically to an x-axis parallel to the long sides and through a center of the conversion device, the M transfer transistors on one long side face the M transfer transistors on the other long side, and the 2N charge drainage transistors are positioned on respective short sides of the conversion device.

    GAS BARRIER FILM AND WAVELENGTH CONVERSION SHEET

    公开(公告)号:US20230258980A1

    公开(公告)日:2023-08-17

    申请号:US18125504

    申请日:2023-03-23

    Applicant: TOPPAN INC.

    CPC classification number: G02F1/133614 C23C14/081

    Abstract: A gas barrier film according to an aspect of the present disclosure includes, in this order: a substrate; a first AlOx-deposited layer; a gas barrier intermediate layer; a second AlOx-deposited layer; and a gas barrier coating layer, each of the first and second AlOx-deposited layers having a thickness of 15 nm or less, each of the gas barrier intermediate layer and the gas barrier coating layer having a thickness of 200 to 400 nm, the gas barrier coating layer having a first complex modulus of 7 to 11 GPa at a measurement temperature of 25° C. and a second complex modulus of 5 to 8 GPa at a measurement temperature of 60° C., the first and second complex moduli being measured by nanoindentation.

    WIRING BOARD AND METHOD OF PRODUCING WIRING BOARD

    公开(公告)号:US20230254983A1

    公开(公告)日:2023-08-10

    申请号:US18134744

    申请日:2023-04-14

    Applicant: TOPPAN INC.

    CPC classification number: H05K3/46 H05K1/02 H05K2203/1338 H05K2201/0769

    Abstract: A wiring board capable of suppressing migration between wires and to provide a method of producing the same, in a method of producing a wiring board provided with a first wiring board in which a first wiring layer is formed, and a second wiring board in which a second wiring layer finer than the first wiring layer is formed, the second wiring board is formed by performing steps of forming a first insulating resin layer provided with a wiring pattern and openings, forming a first inorganic insulating film on the first insulating resin layer, forming a first conductor layer corresponding to the wiring pattern and the openings on the inorganic insulating film, and forming a second inorganic insulating film on the first conductor layer.

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