公开(公告)号：US20110308459A1

公开(公告)日：2011-12-22

申请号：US13148852

申请日：2010-01-29

申请人： Yoshiaki Yoshimoto

发明人： Yoshiaki Yoshimoto

IPC分类号： C23C16/04

CPC分类号： H01L21/68764 ,  C23C16/4581 ,  C23C16/4588 ,  H01L21/68771 ,  H01L21/68785 ,  Y02T50/6765

摘要： A CVD apparatus is provided that can remarkably improve the quality and productivity of susceptors without causing increase in production cost or increase in size of the apparatus. The CVD apparatus is for forming a SiC film on a surface of a carbonaceous substrate (10) except for a part thereof covered by a masking jig (7) by introducing a gas into the apparatus. The carbonaceous substrate (10) has a recessed mask portion (10a) formed in a portion of the carbonaceous substrate (10), and the masking jig (7) is fitted in the mask portion (10a). In the CVD apparatus, the masking jig (7) is secured to a film formation jig (2) so that the carbonaceous substrate (10) is supported by the film formation jig (2), and an angle formed by a main surface of the carbonaceous substrate (10) with respect to the vertical axis (9) is set to 2°.

摘要翻译： 提供一种能够显着提高感受体的质量和生产率而不造成生产成本增加或装置尺寸增加的CVD装置。 CVD装置用于在碳质基材（10）的表面上形成SiC膜，除了由掩模夹具（7）覆盖的部分之外，通过将气体引入装置中。 碳质基材（10）具有形成在碳质基材（10）的一部分中的凹部掩模部（10a），掩模夹具（7）嵌合在掩模部（10a）中。 在CVD装置中，掩模夹具（7）被固定到成膜夹具（2）上，使得碳质基材（10）由成膜夹具（2）支撑，并且由主要表面形成的角度 碳质基材（10）相对于垂直轴（9）设定为2°。

公开(公告)号：US20110030940A1

公开(公告)日：2011-02-10

申请号：US12936683

申请日：2009-04-06

申请人： Akiyoshi Takeda

发明人： Akiyoshi Takeda

IPC分类号： F28F7/00 ,  B32B5/02

CPC分类号： H01L23/373 ,  B32B18/00 ,  C04B35/522 ,  C04B35/62873 ,  C04B35/632 ,  C04B35/63496 ,  C04B35/645 ,  C04B35/653 ,  C04B35/83 ,  C04B2235/5248 ,  C04B2235/526 ,  C04B2235/5264 ,  C04B2235/5268 ,  C04B2235/614 ,  C04B2235/616 ,  C04B2235/656 ,  C04B2235/661 ,  C04B2235/77 ,  C04B2235/9607 ,  C04B2237/385 ,  C04B2237/525 ,  C04B2237/582 ,  C04B2237/61 ,  C04B2237/704 ,  C22C47/08 ,  C22C49/14 ,  C23C18/54 ,  C25D7/00 ,  C25D7/12 ,  H01L2924/0002 ,  Y10T428/249928 ,  H01L2924/00

摘要： To obtain a carbon fiber-reinforced carbon composite material exhibiting excellent thermal conductivity in every direction in the plane containing the X and Y axes. A carbon fiber-carbon composite formed body in which a number of sheet-like dispersions containing pitch-based carbon fibers dispersed therein randomly in the plane containing the X and Y axes are laminated into a carbon fiber laminate, and pyrolytic carbon is deposited on the surfaces of the carbon fibers of the carbon fiber laminate to coat around the carbon fibers, whereby the carbon fiber laminate is filled with the pyrolytic carbon, and a carbon fiber-reinforced carbon composite material obtained using the carbon fiber-carbon composite formed body.

摘要翻译： 为了获得在包含X和Y轴的平面中在各个方向上显示出优异导热性的碳纤维增强碳复合材料。 一种碳纤维 - 碳复合材料成型体，其中在包含X和Y轴的平面中随机分散有多个沥青类碳纤维的片状分散体层压到碳纤维层压体中，并且热解碳沉积在 碳纤维层压体的碳纤维的表面涂覆在碳纤维周围，由此碳纤维层压体填充有热解碳，以及使用碳纤维 - 碳复合材料成形体获得的碳纤维增强碳复合材料。

公开(公告)号：US07772576B2

公开(公告)日：2010-08-10

申请号：US12150207

申请日：2008-04-24

申请人： Cornel Danciu ,  Thomas Abels ,  Brian Good

发明人： Cornel Danciu ,  Thomas Abels ,  Brian Good

IPC分类号： G21F5/02

CPC分类号： H01J37/09 ,  C23C14/48 ,  C23C14/564 ,  H01J2237/05 ,  H01J2237/31701

摘要： A shielding assembly for use in a semiconductor manufacturing apparatus, such as an ion implantation apparatus, includes one or more removable shielding members configured to cover inner surfaces of a mass analyzing chamber. The shielding assembly reduces process by-products from accumulating on the inner surfaces. In one embodiment, a shielding assembly includes first and second shielding members, each having a unitary construction and configured to cover a magnetic area in the mass analyzing chamber. The shielding members desirably are made entirely of graphite or impregnated graphite to minimize contamination of the semiconductor device being processed caused by metal particles eroded from the inner surfaces of the mass analyzing chamber.

摘要翻译： 用于半导体制造装置（例如离子注入装置）中的屏蔽组件包括构造成覆盖质量分析室的内表面的一个或多个可移除屏蔽构件。 屏蔽组件减少了积累在内表面上的过程副产物。 在一个实施例中，屏蔽组件包括第一和第二屏蔽构件，每个屏蔽构件具有整体构造并且构造成覆盖质量分析室中的磁性区域。 屏蔽构件理想地由石墨或浸渍石墨制成，以最小化由被质量分析室的内表面侵蚀的金属颗粒引起的被处理半导体器件的污染。

公开(公告)号：US20100064969A1

公开(公告)日：2010-03-18

申请号：US12278407

申请日：2007-02-07

申请人： Jiro Hiraiwa ,  Osamu Yoshimoto ,  Hiroshi Hayakawa ,  Tetsuro Tojo ,  Tsuneyuki Okabe ,  Takanobu Asano ,  Shinichi Wada ,  Ken Nakao ,  Hitoshi Kato

发明人： Jiro Hiraiwa ,  Osamu Yoshimoto ,  Hiroshi Hayakawa ,  Tetsuro Tojo ,  Tsuneyuki Okabe ,  Takanobu Asano ,  Shinichi Wada ,  Ken Nakao ,  Hitoshi Kato

IPC分类号： H01L21/46

CPC分类号： F17D1/04 ,  C01B7/19 ,  F17C2250/032 ,  F17C2270/0518 ,  H01L21/67017 ,  H01L21/67276

摘要： Fluorine gas generators are connected with semiconductor manufacturing apparatuses through a gas supplying system including a storage tank that can store a predetermined quantity of fluorine gas generated in the on-site fluorine gas generators. When one or more of the on-site fluorine gas generators are stopped, fluorine gas is supplied to the semiconductor manufacturing apparatuses from the storage tank storing a predetermined quantity of fluorine gas, so as to keep the operations of the semiconductor manufacturing apparatuses. Thereby obtained is a semiconductor manufacturing plant in which fluorine gas generated in the fluorine gas generators can be safely and stably supplied to the semiconductor manufacturing apparatuses, and with superior cost performance.

摘要翻译： 氟气发生器通过包括存储在现场氟气发生器中产生的预定量的氟气的储罐的气体供给系统与半导体制造装置连接。 当一个或多个现场氟气发生器停止时，从储存预定量的氟气的储罐向半导体制造装置供应氟气，以保持半导体制造装置的操作。 由此，能够将在氟气发生器中产生的氟气安全稳定地供给到半导体制造装置，并具有优异的成本性能的半导体制造工厂。

公开(公告)号：US20090246493A1

公开(公告)日：2009-10-01

申请号：US12478792

申请日：2009-06-05

申请人： Yoshiaki HIROSE ,  Hideki Inomoto

发明人： Yoshiaki HIROSE ,  Hideki Inomoto

IPC分类号： B32B9/00

CPC分类号： C04B35/536 ,  B32B2315/02 ,  C04B2235/604 ,  C04B2235/65 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/94 ,  C04B2237/363 ,  C30B35/00 ,  Y10T428/30

摘要： The invention provides a flexible, highly pure expanded graphite sheet characterized by having an impurity content of 10 ppm or less and such a degree of flexibility that a sample thereof, 10×100 mm in size can withstand at least 10 times of bending in flexibility test comprising repeatedly bending the sample, with a 50-g weight suspended from one end thereof, by means of bending bodies with a diameter of 6 mm.

摘要翻译： 本发明提供一种挠性高纯度的膨胀石墨片，其特征在于杂质含量为10ppm或更低，并且具有这样的柔性程度，使其尺寸为10×100mm的样品在挠性试验中可承受至少10次弯曲，包括重复 用一个直径为6毫米的弯曲体从一端悬挂50克重的样品。

公开(公告)号：US07517516B2

公开(公告)日：2009-04-14

申请号：US10958409

申请日：2004-10-06

申请人： Ichiro Fujita ,  Satoru Nogami

发明人： Ichiro Fujita ,  Satoru Nogami

IPC分类号： C01B31/00 ,  C01B31/04 ,  B32B9/04 ,  D01F9/12

CPC分类号： C04B35/536 ,  C01P2006/80 ,  C04B35/522 ,  C04B35/64 ,  C04B35/83 ,  C04B41/009 ,  C04B41/5059 ,  C04B41/87 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/6582 ,  C04B2235/661 ,  C04B2235/72 ,  C04B2235/722 ,  C04B2235/723 ,  C04B2235/724 ,  C04B2235/726 ,  C04B2235/727 ,  C30B29/36 ,  C30B35/00 ,  Y10T428/2918 ,  Y10T428/30 ,  Y10T428/31504 ,  C04B41/4531

摘要： The invention provides a high purity carbonaceous material which is reduced in contents of oxygen, nitrogen and chlorine readily binding to carbon atoms and in contents of elements, phosphorus, sulfur and boron, readily binding to carbon atoms upon heating and which can be used in producing single crystals such as semiconductors, a high purity carbonaceous material for use as a substrate for ceramic layer coating, and a ceramic layer-coated high purity carbonaceous material. The high purity carbonaceous material has oxygen content of 1×1018 atoms/cm3 or less as determined by SIMS. Its chlorine content is preferably 1×1016 atoms/cm3 or less as determined by SIMS, and its nitrogen content is preferably 5×1018 atoms/cm3 or less as determined by SIMS. Its phosphorus, sulfur and boron contents are preferably not higher than respective specified values. Such a high purity carbonaceous material is coated with ceramic layer.

摘要翻译： 本发明提供了一种高纯度碳质材料，其中氧，氮和氯的含量容易地与碳原子和元素，磷，硫和硼的含量相容，加热时容易与碳原子结合，并且可用于生产 单晶，例如半导体，用作陶瓷层涂层的基材的高纯度碳质材料，以及陶瓷层涂覆的高纯度碳质材料。 高纯度碳质材料通过SIMS测定的氧含量为1×1018原子/ cm3或更低。 通过SIMS测定，其氯含量优选为1×10 16原子/ cm 3以下，并且通过SIMS测定，其氮含量优选为5×10 18原子/ cm 3以下。 其磷，硫和硼含量优选不高于相应的规定值。 这种高纯度碳质材料涂覆有陶瓷层。

公开(公告)号：US07378670B2

公开(公告)日：2008-05-27

申请号：US10177970

申请日：2002-06-21

申请人： Cornel Danciu ,  Thomas Abels ,  Brian Good

发明人： Cornel Danciu ,  Thomas Abels ,  Brian Good

IPC分类号： G21K5/10

CPC分类号： H01J37/09 ,  C23C14/48 ,  C23C14/564 ,  H01J2237/05 ,  H01J2237/31701

摘要： A shielding assembly for use in a semiconductor manufacturing apparatus, such as an ion implantation apparatus, includes one or more removable shielding members configured to cover inner surfaces of a mass analyzing chamber. The shielding assembly reduces process by-products from accumulating on the inner surfaces. In one embodiment, a shielding assembly includes first and second shielding members, each having a unitary construction and configured to cover a magnetic area in the mass analyzing chamber. The shielding members desirably are made entirely of graphite or impregnated graphite to minimize contamination of the semiconductor device being processed caused by metal particles eroded from the inner surfaces of the mass analyzing chamber.

摘要翻译： 用于半导体制造装置（例如离子注入装置）中的屏蔽组件包括构造成覆盖质量分析室的内表面的一个或多个可移除屏蔽构件。 屏蔽组件减少了积累在内表面上的过程副产物。 在一个实施例中，屏蔽组件包括第一和第二屏蔽构件，每个屏蔽构件具有整体构造并且构造成覆盖质量分析室中的磁性区域。 屏蔽构件理想地由石墨或浸渍石墨制成，以最小化由被质量分析室的内表面侵蚀的金属颗粒引起的被处理半导体器件的污染。

公开(公告)号：US07316765B2

公开(公告)日：2008-01-08

申请号：US10879135

申请日：2004-06-30

申请人： Tetsuro Tojo ,  Jiro Hiraiwa ,  Osamu Yoshimoto

发明人： Tetsuro Tojo ,  Jiro Hiraiwa ,  Osamu Yoshimoto

IPC分类号： C25B15/02

CPC分类号： C25B1/245 ,  C25B15/00 ,  C25C7/06

摘要： An apparatus for controlling a molten salt electrolyzer in which an electrolytic bath in a solid form as contained in the electrolyzer is melted to automatically attain a state allowing electrolysis, which apparatus comprises detecting means for detecting the changes in state of the electrolyzer by means of detectors fitted to the electrolyzer, and adjusting means for adjusting, after using the detecting means, the liquid electrolytic bath levels to a state allowing electrolysis.

摘要翻译： 一种用于控制熔盐电解器的装置，其中包含在电解槽中的固体电解液熔化，以自动获得允许电解的状态，该装置包括用于通过检测器检测电解槽状态变化的检测装置 以及调节装置，用于在使用检测装置之后将液体电解槽液位调整到允许电解的状态。

公开(公告)号：US07078006B2

公开(公告)日：2006-07-18

申请号：US10251964

申请日：2002-09-23

申请人： Hiroshi Okubo ,  Toshiaki Sogabe ,  Tetsuro Tojo ,  Kyoko Noro ,  Hisanori Shinohara

发明人： Hiroshi Okubo ,  Toshiaki Sogabe ,  Tetsuro Tojo ,  Kyoko Noro ,  Hisanori Shinohara

IPC分类号： C01B31/30

CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B32/15 ,  C01B32/152

摘要： A carbon material for producing endohedral metallofullerenes in a high yield is made of a mixture of a metal or metal compound with a carbonaceous material and is used in producing a endohedral metallofullerenes, wherein said carbon material contains a metal carbide and a bulk density of said carbon material is set to 1.80 g/cm3 or less.

摘要翻译： 用于以高产率生产内嵌金属富勒烯的碳材料由金属或金属化合物与碳质材料的混合物制成，并用于生产内嵌金属富勒烯，其中所述碳材料包含金属碳化物和所述碳的堆积密度 材料设定为1.80g / cm 3以下。

公开(公告)号：US20060066203A1

公开(公告)日：2006-03-30

申请号：US11220685

申请日：2005-09-08

申请人： Masaharu Uno ,  Yoshinori Nishiki ,  Tsuneto Furuta ,  Miho Ohashi ,  Tetsuro Tojo ,  Hitoshi Takebayashi ,  Tateki Kurosu

发明人： Masaharu Uno ,  Yoshinori Nishiki ,  Tsuneto Furuta ,  Miho Ohashi ,  Tetsuro Tojo ,  Hitoshi Takebayashi ,  Tateki Kurosu

IPC分类号： H01J1/05

CPC分类号： H01M4/58 ,  C02F1/46109 ,  C02F2001/46142 ,  C23C8/02 ,  C23C28/04 ,  C25B1/245 ,  C25B11/0442

摘要： A conductive diamond electrode including a conductive substrate comprising a carbonaceous material, a conductive diamond catalyst layer formed on a surface of the conductive substrate, and a carbon fluoride formed on an exposed portion present on the surface of the conductive substrate. The formed carbon fluoride prevents the conductive substrate from contacting with an electrolytic solution, thereby suppressing corrosion of the substrate. A long life of the electrode can be attained.

摘要翻译： 导电金刚石电极，其包括含有碳质材料的导电性基材，形成在导电性基材的表面上的导电性金刚石催化剂层，以及形成在导电性基材的表面上的露出部分上形成的氟化碳。 形成的碳氟化物防止导电性基材与电解液接触，从而抑制基板的腐蚀。 可以实现电极的寿命长。