摘要:
A method for correcting the measured values of positions of structures (3) on a substrate (2) resulting from bending of a substrate (2) is disclosed. A plurality of geometric parameters of the substrate (2) are determined. A plurality of physical parameters of the substrate (2) are determined. A degree of bending is calculated individually for each substrate (2) on the basis of the obtained geometric parameters, the physical parameters and the position of the support points (40). The measured position data of the structures (3) on the substrate (2) is corrected with the aid of each individually calculated degree of bending.
摘要:
A device for measuring positions of structures (3) on a substrate (2) is disclosed, wherein the device is enclosed by a climatic chamber (30). An illumination and imaging means (6, 14) is also arranged in the climatic chamber (30). At least one loading station (32) for substrates is formed on an outer wall (30a) of the climatic chamber (30), wherein at least one transport means (34, 40) for transporting the substrates is provided within the climatic chamber (30). A means (36) for orienting the substrates (2) with respect to a coordinate system of the coordinate measuring machine (1) is provided, wherein the transport means (34, 40) deposits the substrates (2) on the means (36) for orienting.
摘要:
A method for determining the positions of structures (3) on a mask (2) is disclosed. The method is implemented in a metrology tool (1) comprising a measurement table (20) which is movable in X-coordinate direction and Y-coordinate direction. A first intensity profile (IX) is recorded along a first measurement direction (MRX), which is parallel to the X-coordinate direction. A second intensity profile (IY) is recorded along a second measurement direction (MRY), which is parallel to the Y-coordinate direction. A two-dimensional position of a centre of gravity (S) with respect to the coordinate system of the metrology tool (1) is determined from the first intensity profile (IX) and the second intensity profile (IY).
摘要:
A method for correcting the measuring errors caused by the lens distortion of an objective in a coordinate measuring machine is disclosed. For a plurality of different types of structures, the lens distortion caused by an objective is determined in an image field of the objective. The position of a type of structure is determined in the image field of the objective by a measuring window. The correction of the lens distortion required for the type of structure to be measured is retrieved from the database as a function of the type of structure to be measured.
摘要:
A method, a device and the application for the inspection of defects on the edge region of a wafer (6) is disclosed. At least one illumination device (41) illuminates the edge region (6a) of the wafer (6). At least one optical unit (40) is provided, said optical unit (40) being positionable subject to the position of the defect (88) relative to a top surface (30) of the edge of the wafer (6a) or a bottom surface (31) of the edge of the wafer (6a) or a face (32) of the edge of the wafer (6a) for capturing an image of said defect.
摘要:
The present invention relates to an apparatus for illuminating and inspecting a specular surface, comprising a light source, a collector optics for collecting the light from the light source, a homogenizing optics for transmitting the light from the collector optics having a first micro-lens array downstream of the collector optics, and a second micro-lens array downstream of the first micro-lens array, a Fourier optics for transmitting the light from the homogenizing optics onto the specular surface, an objective optics, and a detector for receiving an image, wherein the collector optics and the first micro-lens array project the light source onto the second micro-lens array and wherein the second micro-lens array and the Fourier optics project the first micro-lens array onto the specular surface, and wherein the objective optics projects the specular surface onto the detector.
摘要:
A method for the high-precision measurement of coordinates on a substrate is disclosed. The substrate is placed on a stage moveable in X/Y coordinate directions. First, a plurality of images of a structure on a substrate are imaged by means of a 2-dimensional detector during the relative movement of a measuring objective in Z coordinate direction and the simultaneous movement of the stage in X and Y coordinate directions.
摘要:
An apparatus for inspecting a surface of a wafer includes an illumination device for illuminating an imaging area of the wafer with at least one broad-band spectrum, and an optical imaging device with a detector for polychromatic imaging of the imaging area of the wafer based on the illumination, wherein the imaging device includes a filter arrangement for selecting a plurality of narrow-band spectra. In addition, a method for inspecting the surface of a wafer, includes the steps of leveling a plurality of narrow-band spectra to a common intensity range, illuminating an imaging area of the wafer with at least one broad-band spectrum, and imaging a plurality of narrow-band spectra from the imaging area based on the illumination.
摘要:
A method for the high-precision measurement of coordinates of at least one structure on a substrate. A stage traversable in X/Y coordinate directions is provided, which is placed in an interferometric-optical measuring system. The structure on the substrate is imaged on at least one detector (34) via a measuring objective (21) having its optical axis (20) aligned in the Z coordinate direction. The structure is imaged with the so-called Dual Scan. Systematic errors can thereby be eliminated.
摘要:
A system for determining positions of structures on a substrate is disclosed. The system includes a plurality of stations enclosed by a housing. At least one of the stations inside the housing is designed to be movable. The housing is provided with a filter fan unit generating an air flow in the housing. Air-directing elements are provided in the housing so that an invariable flow may be achieved irrespective of the at least one movable station.