公开(公告)号：US20120273749A1

公开(公告)日：2012-11-01

申请号：US13094344

申请日：2011-04-26

Applicant: HSING-KUO HSIA ,  CHING-HUA CHIU

Inventor： HSING-KUO HSIA ,  CHING-HUA CHIU

IPC: H01L33/04 ,  H01L21/20

CPC classification number: H01L33/20 ,  H01L33/007 ,  H01L33/0079

Abstract: The present disclosure provides one embodiment of a method for fabricating light-emitting diode (LED) devices. The method includes forming a nano-mask layer on a first substrate, wherein the nano-mask layer has a randomly arranged grain pattern; growing a first epitaxy semiconductor layer in the first substrate, forming a nano-composite layer; growing a number of epitaxy semiconductor layers over the nano-composite layer; bonding a second substrate to the epitaxy semiconductor layers from a first side of the epitaxy semiconductor layers; applying a radiation energy to the nano-composite layer; and separating the first substrate from the epitaxy semiconductor layers from a second side of the epitaxy semiconductor layers.

Abstract translation: 本公开提供了制造发光二极管（LED）装置的方法的一个实施例。 该方法包括在第一基板上形成纳米掩模层，其中纳米掩模层具有随机布置的晶粒图案; 在第一衬底中生长第一外延半导体层，形成纳米复合层; 在纳米复合层上生长许多外延半导体层; 从所述外延半导体层的第一侧将第二衬底接合到所述外延半导体层; 向纳米复合层施加辐射能; 以及从所述外延半导体层的第二侧将所述第一衬底与所述外延半导体层分离。

公开(公告)号：US08236584B1

公开(公告)日：2012-08-07

申请号：US13025975

申请日：2011-02-11

Applicant: Chyi Shyuan Chem ,  Wen-Chien Fu ,  Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Ching-Hua Chiu ,  Hung-Yi Kuo

Inventor： Chyi Shyuan Chem ,  Wen-Chien Fu ,  Hsing-Kuo Hsia ,  Chih-Kuang Yu ,  Ching-Hua Chiu ,  Hung-Yi Kuo

IPC: H01L21/00 ,  H01L33/00

CPC classification number: H01L33/647 ,  H01L24/73 ,  H01L24/97 ,  H01L33/005 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2224/97 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/15787 ,  H01L2933/0033 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/92247

Abstract: The present disclosure provides one embodiment of a method for fabricating a light emitting diode (LED) package. The method includes forming a plurality of through silicon vias (TSVs) on a silicon substrate; depositing a dielectric layer over a first side and a second side of the silicon substrate and over sidewall surfaces of the TSVs; forming a metal layer patterned over the dielectric layer on the first side and the second side of the silicon substrate and further filling the TSVs; and forming a plurality of highly reflective bonding pads over the metal layer on the second side of the silicon substrate for LED bonding and wire bonding.

Abstract translation: 本公开提供了制造发光二极管（LED）封装的方法的一个实施例。 该方法包括在硅衬底上形成多个通硅通孔（TSV）; 在所述硅衬底的第一侧和第二侧以及所述TSV的侧壁表面上沉积介电层; 在硅衬底的第一侧和第二侧上的电介质层上形成图案化的金属层，并进一步填充TSV; 以及在所述硅衬底的所述第二侧上的所述金属层上形成多个高反射性接合焊盘，用于LED接合和引线接合。

公开(公告)号：US20120126262A1

公开(公告)日：2012-05-24

申请号：US12949316

申请日：2010-11-18

Applicant: Hung-Wen Huang ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

Inventor： Hung-Wen Huang ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

IPC: H01L33/00

CPC classification number: H01L33/22 ,  H01L33/007 ,  H01L33/20

Abstract: The present disclosure relates to methods for fabricating LEDs by patterning and etching an n-doped epitaxial layer to form regions of roughened surface of the n-doped layer and mesa structures adjacent to the roughened surface regions before depositing an active layer and the rest of the epitaxial layers on the mesa structures. The method includes growing epitaxial layers of an LED including an un-doped layer and an n-doped layer on a wafer of growth substrate. The method also includes patterning the n-doped layer to form a first region of the n-doped layer and a mesa region of the n-doped layer adjacent to the first region. The method further includes etching the first region of the n-doped layer to create a roughened surface. The method further includes growing additional epitaxial layers of the LED including an active layer and a p-doped layer on the mesa region of the n-doped layer.

Abstract translation: 本公开涉及通过图案化和蚀刻n掺杂外延层来形成LED的方法，以在沉积有源层之前形成n掺杂层和邻近粗糙化表面区域的台面结构的粗糙表面的区域，并且其余部分 外延层在台面结构上。 该方法包括在生长衬底的晶片上生长包括未掺杂层和n掺杂层的LED的外延层。 该方法还包括图案化n掺杂层以形成n掺杂层的第一区域和与第一区域相邻的n掺杂层的台面区域。 该方法还包括蚀刻n掺杂层的第一区域以产生粗糙表面。 该方法还包括增加LED的附加外延层，其包括n掺杂层的台面区域上的有源层和p掺杂层。

公开(公告)号：US20120080698A1

公开(公告)日：2012-04-05

申请号：US12898500

申请日：2010-10-05

Applicant: Jung-Tang Chu ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

Inventor： Jung-Tang Chu ,  Hsing-Kuo Hsia ,  Ching-Hua Chiu

IPC: H01L33/32 ,  H01L33/60

CPC classification number: H01L33/20 ,  H01L33/007 ,  H01L33/46

Abstract: The present disclosure relates to high efficiency light emitting diode devices and methods for fabricating the same. In accordance with one or more embodiments, a light emitting diode device includes a substrate having one or more recessed features formed on a surface thereof and one or more omni-directional reflectors formed to overlie the one or more recessed features. A light emitting diode layer is formed on the surface of the substrate to overlie the omni-directional reflector. The one or more omni-directional reflectors are adapted to efficiently reflect light.

Abstract translation: 本公开涉及高效率发光二极管器件及其制造方法。 根据一个或多个实施例，发光二极管器件包括具有形成在其表面上的一个或多个凹陷特征的基底和形成为覆盖一个或多个凹陷特征的一个或多个全向反射器。 在基板的表面上形成发光二极管层以覆盖全向反射器。 一个或多个全向反射器适于有效地反射光。

公开(公告)号：US20120032212A1

公开(公告)日：2012-02-09

申请号：US12851696

申请日：2010-08-06

Applicant: Hung-Wen HUANG ,  Hsing-Kuo HSIA ,  Ching-Hua CHIU

Inventor： Hung-Wen HUANG ,  Hsing-Kuo HSIA ,  Ching-Hua CHIU

IPC: H01L33/58 ,  H01L21/30

CPC classification number: H01L33/44 ,  H01L21/2654 ,  H01L21/2658 ,  H01L2933/0025

Abstract: A Light-Emitting Diode (LED) includes a light-emitting structure having a passivation layer disposed on vertical sidewalls across a first doped layer, an active layer, and a second doped layer that completely covers at least the sidewalls of the active layer. The passivation layer is formed by plasma bombardment or ion implantation of the light-emitting structure. It protects the sidewalls during subsequent processing steps and prevents current leakage around the active layer.

Abstract translation: 发光二极管（LED）包括具有钝化层的发光结构，所述钝化层设置在横跨第一掺杂层，有源层和完全覆盖有源层的侧壁的第二掺杂层的垂直侧壁上。 钝化层通过等离子体轰击或发光结构的离子注入而形成。 它在后续处理步骤中保护侧壁，并防止有源层周围的电流泄漏。

公开(公告)号：US20120012871A1

公开(公告)日：2012-01-19

申请号：US12837227

申请日：2010-07-15

Applicant: Hsing-Kuo Hsia ,  Hung-Wen Huang ,  Ching-Hua Chiu ,  Gordon Kuo

Inventor： Hsing-Kuo Hsia ,  Hung-Wen Huang ,  Ching-Hua Chiu ,  Gordon Kuo

IPC: H01L33/10 ,  H01L21/66 ,  H01L21/50

CPC classification number: H01L33/0095 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/405 ,  H01L33/44

Abstract: The present disclosure relates to methods for performing wafer-level measurement and wafer-level binning of LED devices. The present disclosure also relates to methods for reducing thermal resistance of LED devices. The methods include growing epitaxial layers consisting of an n-doped layer, an active layer, and a p-doped layer on a wafer of a growth substrate. The method further includes forming p-contact and n-contact to the p-doped layer and the n-doped layer, respectively. The method further includes performing a wafer-level measurement of the LED by supplying power to the LED through the n-contact and the p-contact. The method further includes dicing the wafer to generate diced LED dies, bonding the diced LED dies to a chip substrate, and removing the growth substrate from the diced LED dies.

Abstract translation: 本公开涉及用于执行LED器件的晶片级测量和晶片级合并的方法。 本公开还涉及降低LED器件热阻的方法。 所述方法包括在生长衬底的晶片上生长由n掺杂层，有源层和p掺杂层组成的外延层。 该方法还包括分别与p掺杂层和n掺杂层形成p-接触和n-接触。 该方法还包括通过n接触和p接触向LED提供电力来执行LED的晶片级测量。 该方法还包括切割晶片以产生切割的LED管芯，将切割的LED管芯结合到芯片衬底，以及从切割的LED管芯移除生长衬底。

公开(公告)号：US07888144B2

公开(公告)日：2011-02-15

申请号：US11984562

申请日：2007-11-20

Applicant: Ching-Hua Chiu ,  Hung-Wen Huang ,  Hao-Chung Kuo ,  Tien-Chang Lu ,  Shing-Chung Wang ,  Chih-Ming Lai

Inventor： Ching-Hua Chiu ,  Hung-Wen Huang ,  Hao-Chung Kuo ,  Tien-Chang Lu ,  Shing-Chung Wang ,  Chih-Ming Lai

IPC: H01L21/00

CPC classification number: H01L33/20 ,  H01L33/10 ,  H01L33/44

Abstract: A light-emitting device is capable of emitting a light having a wavelength ranging from 300 to 550 nm, and includes: a substrate; a p-type semiconductor layer disposed on the substrate; an active layer disposed on the p-type semiconductor layer; a n-type semiconductor layer disposed on the active layer and having a waveguide-disposing surface; and a waveguide structure formed on the waveguide-disposing surface of the n-type semiconductor layer and having a plurality of spaced apart nanorods extending from the waveguide-disposing surface.

Abstract translation: 发光装置能够发射波长为300〜550nm的光，并且包括：基板; 设置在基板上的p型半导体层; 设置在p型半导体层上的有源层; n型半导体层，设置在有源层上并具有波导管布置表面; 以及波导结构，其形成在所述n型半导体层的所述波导配置面上，并具有从所述波导配置面延伸的多个间隔开的纳米棒。