摘要:
A device for definition of the waiting time which should pass in a clock-controlled memory circuit after the start of a specific operation until a subsequent operation may be started. The device includes a digital timer which is arranged in the memory circuit, is switched on when the specific operation is initiated and allows the subsequent operation to be started after a defined time period has elapsed. The digital timer, after it is switched on, counts periodic counting pulses which are derived from the clock signal, in order to signal the end of the waiting time as soon as it has counted a desired number of these pulses. A waiting time adjustment apparatus is provided and is accessible via external connections of the memory circuit in order to set the desired number of counting pulses.
摘要:
The invention relates to a method for controlling write access to a semiconductor memory, particularly a DDR graphics memory, in which a multiplicity of data packets are written to the semiconductor memory per data burst, in which write access is initiated by a write command and the data packets which are to be written to the memory are latched under the control of a cycle of a data strobe write clock control signal, where the data packets are latched by alternately using a respective falling and rising edge of the data strobe write clock control signal, and where the data strobe write clock control signal has a defined state at the start of the write operation. The invention also relates to a circuit arrangement for carrying out the method.
摘要:
The invention relates to a device for definition of the waiting time which should pass in a clock-controlled memory circuit after the start of a specific operation until a subsequent operation may be started. The device includes a digital timer which is arranged in the memory circuit, is switched on when the specific operation is initiated and allows the subsequent operation to be started after a defined time period has elapsed. The digital timer, after it is switched on, counts periodic counting pulses which are derived from the clock signal, in order to signal the end of the waiting time as soon as it has counted a desired number of these pulses. A waiting time adjustment apparatus is provided and is accessible via external connections of the memory circuit in order to set the desired number of counting pulses.
摘要:
The invention relates to a method for controlling write access to a semiconductor memory, particularly a DDR graphics memory, in which a multiplicity of data packets are written to the semiconductor memory per data burst, in which write access is initiated by a write command and the data packets which are to be written to the memory are latched under the control of a cycle of a data strobe write clock control signal, where the data packets are latched by alternately using a respective falling and rising edge of the data strobe write clock control signal, and where the data strobe write clock control signal has a defined state at the start of the write operation. The invention also relates to a circuit arrangement for carrying out the method.
摘要:
An integrated memory has row lines, column lines and column selection lines for activating read/write amplifiers. In each case, one group of a predetermined number of memory cells belongs to a row and a column address. Furthermore, the memory has a number of connecting pads corresponding to the predetermined number. Each memory cell in a group of memory cells is associated with one of the connecting pads. A control circuit for controlling the memory access is designed and can be operated such that, with a column address, it activates at least two different column selection lines. One of the column selection lines is activated for two or more column addresses. The delay times and the line lengths on the memory chip can thus be reduced in size.
摘要:
Integrated circuits, in particular memory chips of the DDR SDRAM type, are tested in a parallel manner. In order to prevent the circuits from being driven relative to one another during a test operation, an input terminal that is already connected to a channel of an automatic test machine anyway is connected to a switching device, by which the output drivers can be turned off in a manner dependent on the control signal that can be fed in at the input terminal. The switching device preferably contains a demultiplexer and also a multiplexer. The demultiplexer can be driven by a test control signal that is additionally generated besides the test control signal. The input terminal is connected to a tester channel anyway during test operation, with the result that no additional external outlay arises.
摘要:
An integrated memory is described which has a memory cell array with column lines and row lines. A row access controller serves for activating one of the row lines and for controlling a deactivation operation. An input of a control unit is connected to a signal terminal for a signal that, in the event of a read access to one of the memory cells, defines the beginning of data outputting to a point outside the memory cell array. The data output is synchronized with a clock signal. In this case, the signal is adjustable depending on an operating frequency of the memory. An output signal of the control unit serves for triggering the deactivation operation of one of the row lines after a write access. Therefore, in the event of a write access, a comparatively high data throughput is possible even at different operating frequencies of the integrated memory.
摘要:
The bearing module (10) is used to support an actuating element which can be displaced counter to the force of at least one return spring (32) with a force hysteresis due to friction. With previous bearing modules, complex friction mechanisms which ensure the desired hysteresis are provided in addition to the return springs. To reduce the number of parts necessary for a bearing module, the proposal is that the force should be transmitted from the return spring (32) via a friction element (24) which slides on a friction surface (28) assigned to the return spring (32) during the displacement, either tensioning the spring (32) or being returned by it. The direct production of hysteresis in the return mechanism reduces the number of components and hence the costs of production for the bearing module (10).
摘要:
A memory has data lines through which data connections are connected to groups of memory cells via a synchronizing unit. The synchronizing unit is disposed adjacent to the cell group and has a clock input to which an internal clock signal is fed. In the event of a write access to the memory, the synchronizing unit synchronizes with the internal clock signal data signals that are fed via the data connections and are synchronous with an external clock signal.