公开(公告)号：US20080007679A1

公开(公告)日：2008-01-10

申请号：US11812770

申请日：2007-06-21

申请人： Takahiro Ochiai ,  Takayuki Nakao ,  Daisuke Sonoda ,  Hidekazu Miyake ,  Toshio Miyazawa ,  Masahiro Maki ,  Tohru Sasaki

发明人： Takahiro Ochiai ,  Takayuki Nakao ,  Daisuke Sonoda ,  Hidekazu Miyake ,  Toshio Miyazawa ,  Masahiro Maki ,  Tohru Sasaki

IPC分类号： G02F1/1335

CPC分类号： G02F1/136227 ,  G02F1/133371 ,  G02F1/133555 ,  G02F1/134363 ,  G02F1/13454 ,  G09G3/3655 ,  G09G2300/0456

摘要： The manufacturing yield of transflective liquid crystal display devices is to be enhanced. In a transflective liquid crystal display device including a liquid crystal display panel having a pair of substrates and a liquid crystal layer held between the pair of substrates, the liquid crystal display panel has a plurality of subpixels each having a transmissive part and a reflective part, wherein one of the pair of substrates has: an active element; a first insulating film disposed in a higher layer than the electrode of the active element and having a first contact hole; a counter electrode disposed in a higher layer than the first insulating film; a reflective electrode disposed in the reflective part in a higher layer than the counter electrode; a second insulating film disposed in a higher layer than the counter electrode and the reflective electrode and having a second contact hole; a pixel electrode disposed in a higher layer than the second insulating film; and an electroconductor formed in the first contact hole and electrically connected to the electrode of the active element, and the pixel electrode is electrically connected to the electroconductor via the second contact hole.

摘要翻译： 半透射型液晶显示装置的制造成品率得到提高。 在包括具有一对基板的液晶显示面板和保持在一对基板之间的液晶层的半透射型液晶显示装置中，液晶显示面板具有多个子像素，每个子像素具有透射部分和反射部分， 其中所述一对基板中的一个具有：有源元件; 第一绝缘膜，设置在比所述有源元件的电极高的层中，并具有第一接触孔; 设置在比所述第一绝缘膜高的层中的对置电极; 反射电极，设置在比对电极高的层中的反射部分中; 第二绝缘膜设置在比对电极和反射电极更高的层中，并具有第二接触孔; 设置在比所述第二绝缘膜高的层中的像素电极; 以及形成在第一接触孔中并且电连接到有源元件的电极的电导体，并且像素电极经由第二接触孔电连接到电导体。

公开(公告)号：US20050266594A1

公开(公告)日：2005-12-01

申请号：US11138471

申请日：2005-05-27

申请人： Takuo Kaitoh ,  Takahiro Kamo ,  Hidekazu Miyake ,  Toshihiko Itoga

发明人： Takuo Kaitoh ,  Takahiro Kamo ,  Hidekazu Miyake ,  Toshihiko Itoga

IPC分类号： G02F1/1368 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L51/50 ,  H05B33/14

CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L27/1229 ,  H01L27/1285

摘要： A manufacturing method for a display device includes: a first thin film transistor that is formed in a first region over a substrate and has a first threshold value according to doping of a first impurity into a semiconductor layer in a channel region; and a second thin film transistor that is formed in a second region over the substrate and has a second threshold value, which is different from the first threshold value, according to doping of a second impurity into a semiconductor layer in a channel region, wherein a crystallized semiconductor layer, which is used in the channel region of the second thin film transistor, is obtained by subjecting a semiconductor layer in the second region to fusing treatment in a state in which the second impurity is applied over the semiconductor layer.

摘要翻译： 一种显示装置的制造方法，包括：第一薄膜晶体管，其形成在衬底上的第一区域中，并且具有根据第一杂质掺杂到沟道区域中的半导体层中的第一阈值; 以及第二薄膜晶体管，其形成在所述衬底上的第二区域中，并且具有根据第二杂质掺杂到沟道区域中的半导体层中的与所述第一阈值不同的第二阈值，其中， 在第二薄膜晶体管的沟道区域中使用的结晶半导体层通过在第二区域中的半导体层在半导体层上施加第二杂质的状态下进行熔合处理来获得。

公开(公告)号：US4393210A

公开(公告)日：1983-07-12

申请号：US182188

申请日：1980-08-28

申请人： Shigeo Senda ,  Eiichi Katho ,  Osamu Ohtani ,  Hidekazu Miyake ,  Khosuke Fujiwara

发明人： Shigeo Senda ,  Eiichi Katho ,  Osamu Ohtani ,  Hidekazu Miyake ,  Khosuke Fujiwara

IPC分类号： C07D217/24 ,  C07D217/26 ,  C07D217/14 ,  A61K31/47

CPC分类号： C07D217/26 ,  C07D217/24

摘要： 1(2H)-Isoquinolone compounds represented by the formula (1) ##STR1## wherein Y represents hydrogen, chlorine or a methoxy group, Z represents a straight chain or branched chain divalent saturated aliphatic hydrocarbon group having 2 to 4 carbon atoms, R.sub.1 represents a cyano group, a lower alkoxycarbonyl group, a carbamoyl group, an N-substituted carbamoyl group, a phenyl group or a substituted phenyl group, R.sub.2 represents hydrogen or a lower alkyl group, and R.sub.3 represents a lower alkyl group, or R.sub.2 and R.sub.3 can form, when taken together with the nitrogen atom to which they are attached, a heterocyclic group, and the acid addition salts thereof, useful as analgesic, gastric secretion inhibitory, anti-depression, anti-histamine, anti-cholinergic and anti-ulcer agents.

摘要翻译： 1（2H） - 由式（1）表示的异喹诺酮化合物其中Y表示氢，氯或甲氧基，Z表示具有2至4个碳原子的直链或支链二价饱和脂族烃基 R1表示氰基，低级烷氧基羰基，氨基甲酰基，N-取代氨基甲酰基，苯基或取代苯基，R2表示氢或低级烷基，R3表示低级烷基，或 R2和R3可以与它们所连接的氮原子一起形成杂环基及其酸加成盐，其可用作止痛剂，胃分泌抑制剂，抗抑郁药，抗组胺药，抗胆碱能药和 抗溃疡剂。

公开(公告)号：US08624256B2

公开(公告)日：2014-01-07

申请号：US12219900

申请日：2008-07-30

申请人： Takuo Kaitoh ,  Hidekazu Miyake ,  Takeshi Sakai ,  Terunori Saitou

发明人： Takuo Kaitoh ,  Hidekazu Miyake ,  Takeshi Sakai ,  Terunori Saitou

IPC分类号： H01L27/14

CPC分类号： H01L27/1251 ,  H01L27/1229

摘要： The present invention provides a display device which forms a drive circuit using a bottom-gate-type TFT made of poly-Si which generates a small leak current in a periphery of a display region. A gate electrode is made of Mo having a high melting point, and a gate insulation film is formed on the gate electrode. A channel layer constituted of a poly-Si layer is formed on the gate insulation film, and the poly-Si layer is covered with an a-Si layer. An n+Si layer is formed on the a-Si layer, and an SD electrode is formed on the n+Si layer. Although holes are induced in the poly-Si layer when a negative voltage (inverse bias) is applied to the gate electrode, the holes cannot pass through the a-Si layer and hence, no drain current flows. Accordingly, it is possible to realize a bottom-gate-type TFT using poly-silicon which generates a small leak current.

摘要翻译： 本发明提供一种使用由多晶硅制成的底栅型TFT形成驱动电路的显示装置，其在显示区域的周围产生小的漏电流。 栅电极由具有高熔点的Mo制成，栅极绝缘膜形成在栅电极上。 在栅极绝缘膜上形成由多晶硅层构成的沟道层，多晶硅层被a-Si层覆盖。 在a-Si层上形成n + Si层，在n + Si层上形成SD电极。 虽然当向栅电极施加负电压（反向偏压）时，在多晶硅层中感应到空穴，但是空穴不能通过a-Si层，因此不会流过漏极电流。 因此，可以实现产生小漏电流的多晶硅的底栅型TFT。

公开(公告)号：US07777230B2

公开(公告)日：2010-08-17

申请号：US12155788

申请日：2008-06-10

申请人： Hidekazu Miyake ,  Takuo Kaitoh ,  Takeshi Noda ,  Toshio Miyazawa

发明人： Hidekazu Miyake ,  Takuo Kaitoh ,  Takeshi Noda ,  Toshio Miyazawa

IPC分类号： H01L27/14

CPC分类号： H01L27/124 ,  G02F1/1368

摘要： The present invention provides a display device having thin film transistors which can reduce an OFF current in spite of the extremely simple constitution. In the display device having thin film transistors on a substrate, each thin film transistor includes a gate electrode which is connected with a gate signal line, a semiconductor layer which is formed astride the gate electrode by way of an insulation film, a drain electrode which is connected with a drain signal line and is formed on the semiconductor layer, and a source electrode which is formed on the semiconductor layer in a state that the source electrode faces the drain electrode in an opposed manner, and a side of the drain electrode which faces the source electrode does not overlap the gate electrode as viewed in a plan view, and a side of the source electrode which faces the drain electrode does not overlap the gate electrode as viewed in a plan view.

摘要翻译： 本发明提供了一种具有薄膜晶体管的显示装置，尽管结构非常简单，但可以减小关断电流。 在基板上具有薄膜晶体管的显示装置中，每个薄膜晶体管包括与栅极信号线连接的栅电极，通过绝缘膜跨越栅电极的半导体层，漏电极 与漏极信号线连接并形成在半导体层上，并且以与源电极相对的方式形成在漏电极的状态的半导体层上形成的源电极和漏电极的一侧 如平面图所示，面源极电极不与栅电极重叠，源极电极的面对漏电极的一侧与平面图中的栅电极不重叠。

公开(公告)号：US20100201717A1

公开(公告)日：2010-08-12

申请号：US12656047

申请日：2010-01-14

申请人： Masakazu Kato ,  Katsuhide Uchino ,  Hidekazu Miyake

发明人： Masakazu Kato ,  Katsuhide Uchino ,  Hidekazu Miyake

IPC分类号： G09G5/10

CPC分类号： G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0866 ,  G09G2310/06 ,  G09G2310/066 ,  G09G2330/028 ,  H01L27/3276

摘要： A driving method for a display device includes the steps of: performing writing processing to apply a video signal to a first node over a data line via a writing transistor with a predetermined driving voltage applied from a power supply to one of source/drain regions of a driving transistor, wherein the trailing edge of a scanning signal to be applied to a gate electrode of the writing transistor at the writing processing step is inclined; and the luminance characteristic of display elements connected onto each of a scan lines is controlled by controlling the crest value of the scanning signal, which is applied to first to M-th scan lines, for each of the scan lines.

摘要翻译： 一种用于显示装置的驱动方法包括以下步骤：执行写入处理，以便经由写入晶体管将数据线上的第一节点施加视频信号，该写入晶体管具有从电源施加到一个源极/漏极区域的一个源极/漏极区域的预定驱动电压 驱动晶体管，其中在写入处理步骤中施加到写入晶体管的栅电极的扫描信号的后沿是倾斜的; 通过对每个扫描线控制施加到第一至第M扫描线的扫描信号的波峰值来控制连接到每条扫描线上的显示元件的亮度特性。

公开(公告)号：US07675592B2

公开(公告)日：2010-03-09

申请号：US11812770

申请日：2007-06-21

申请人： Takahiro Ochiai ,  Takayuki Nakao ,  Daisuke Sonoda ,  Hidekazu Miyake ,  Toshio Miyazawa ,  Masahiro Maki ,  Tohru Sasaki

发明人： Takahiro Ochiai ,  Takayuki Nakao ,  Daisuke Sonoda ,  Hidekazu Miyake ,  Toshio Miyazawa ,  Masahiro Maki ,  Tohru Sasaki

IPC分类号： G02F1/1335 ,  G02F1/1343

CPC分类号： G02F1/136227 ,  G02F1/133371 ,  G02F1/133555 ,  G02F1/134363 ,  G02F1/13454 ,  G09G3/3655 ,  G09G2300/0456

摘要： The manufacturing yield of transflective liquid crystal display devices is to be enhanced. In a transflective liquid crystal display device including a liquid crystal display panel having a pair of substrates and a liquid crystal layer held between the pair of substrates, the liquid crystal display panel has a plurality of subpixels each having a transmissive part and a reflective part, wherein one of the pair of substrates has: an active element; a first insulating film disposed in a higher layer than the electrode of the active element and having a first contact hole; a counter electrode disposed in a higher layer than the first insulating film; a reflective electrode disposed in the reflective part in a higher layer than the counter electrode; a second insulating film disposed in a higher layer than the counter electrode and the reflective electrode and having a second contact hole; a pixel electrode disposed in a higher layer than the second insulating film; and an electroconductor formed in the first contact hole and electrically connected to the electrode of the active element, and the pixel electrode is electrically connected to the electroconductor via the second contact hole.

摘要翻译： 半透射型液晶显示装置的制造成品率得到提高。 在包括具有一对基板的液晶显示面板和保持在一对基板之间的液晶层的半透射型液晶显示装置中，液晶显示面板具有多个子像素，每个子像素具有透射部分和反射部分， 其中所述一对基板中的一个具有：有源元件; 第一绝缘膜，设置在比所述有源元件的电极高的层中，并具有第一接触孔; 设置在比所述第一绝缘膜高的层中的对置电极; 反射电极，设置在比对电极高的层中的反射部分中; 第二绝缘膜设置在比对电极和反射电极更高的层中，并具有第二接触孔; 设置在比所述第二绝缘膜高的层中的像素电极; 以及形成在第一接触孔中并且电连接到有源元件的电极的电导体，并且像素电极经由第二接触孔电连接到电导体。

公开(公告)号：US20090230397A1

公开(公告)日：2009-09-17

申请号：US12405396

申请日：2009-03-17

申请人： Takeshi Noda ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takahiro Kamo

发明人： Takeshi Noda ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takahiro Kamo

IPC分类号： H01L27/12 ,  H01L21/77

CPC分类号： H01L27/1251 ,  H01L27/1229 ,  H01L27/1285

摘要： A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked.

摘要翻译： 显示装置包括TFT基板，其中在绝缘基板的表面上设置有多个具有非晶半导体的有源层的第一TFT元件和多个具有多晶半导体的有源层的第二TFT元件， 其中所述第一TFT元件和所述第二TFT元件各自具有在所述绝缘基板的表面上依次堆叠的栅电极，栅极绝缘膜和所述有源层的结构，以及源电极和漏电极都连接到 通过有源层上方的接触层的有源层和第二TFT元件的有源层在接触层堆叠的位置具有大于60nm的厚度。

公开(公告)号：US20090095957A1

公开(公告)日：2009-04-16

申请号：US12285820

申请日：2008-10-15

申请人： Hidekazu Miyake ,  Takuo Kaitoh ,  Takeshi Kuriyagawa ,  Toshio Miyazawa

发明人： Hidekazu Miyake ,  Takuo Kaitoh ,  Takeshi Kuriyagawa ,  Toshio Miyazawa

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L29/78696 ,  H01L27/1229 ,  H01L27/1251 ,  H01L29/66765

摘要： To provide a display device, including a polysilicon thin film transistor, which achieves a reduction of an off current with a simple configuration and with only a slight increase in a number of processes. A display device includes: an insulating substrate, and a thin film transistor formed on the insulating substrate, wherein a semiconductor layer of the thin film transistor has a polysilicon layer, a first amorphous silicon layer formed above the polysilicon layer, and a second amorphous silicon layer formed above the first amorphous silicon layer.

摘要翻译： 提供一种包括多晶硅薄膜晶体管的显示装置，其以简单的配置实现了关断电流的降低，并且仅有少量的处理量增加。 一种显示装置，包括：绝缘基板和形成在所述绝缘基板上的薄膜晶体管，其中，所述薄膜晶体管的半导体层具有多晶硅层，形成在所述多晶硅层上方的第一非晶硅层，以及第二非晶硅 层形成在第一非晶硅层之上。

公开(公告)号：US20080303030A1

公开(公告)日：2008-12-11

申请号：US12155504

申请日：2008-06-05

申请人： Takeshi Sakai ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Hidekazu Miyake

发明人： Takeshi Sakai ,  Toshio Miyazawa ,  Takuo Kaitoh ,  Hidekazu Miyake

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L27/1214 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78678

摘要： A semiconductor device includes an insulating substrate and a TFT element disposed on the substrate. The TFT element includes a gate electrode, a gate insulating film, a semiconductor layer, and a source electrode and a drain electrode arranged in that order on the insulating substrate. The semiconductor layer includes an active layer composed of polycrystalline semiconductor and a contact layer segment interposed between the active layer and the source electrode and another contact layer segment interposed between the active layer and the drain electrode. The source and drain electrodes each have a first face facing the opposite face of the active layer from the interface with the gate insulating layer and a second face facing an etched side face of the active layer. Each contact layer segment is disposed between the active layer and each of the first and second faces of the source or drain electrode.

摘要翻译： 半导体器件包括绝缘基板和设置在基板上的TFT元件。 TFT元件包括在绝缘基板上依次排列的栅电极，栅极绝缘膜，半导体层以及源电极和漏电极。 半导体层包括由多晶半导体构成的有源层和介于有源层与源电极之间的接触层段，以及介于有源层和漏电极之间的另一接触层段。 源极和漏极各自具有面对与有源层的界面相对的有源层的相对面的第一面和与有源层的蚀刻侧面对置的第二面。 每个接触层段设置在源极或漏极之间的有源层和第一和第二表面中的每一个之间。