公开(公告)号：US06881115B2

公开(公告)日：2005-04-19

申请号：US09946666

申请日：2001-09-06

申请人： Masahiko Yamamoto ,  Yoshiki Ishizuka ,  Yumi Fukuda ,  Hironori Asai ,  Koji Suzuki

发明人： Masahiko Yamamoto ,  Yoshiki Ishizuka ,  Yumi Fukuda ,  Hironori Asai ,  Koji Suzuki

IPC分类号： H01J1/30 ,  H01J1/316 ,  H01J9/02 ,  H01J1/304

CPC分类号： H01J9/027 ,  H01J1/316

摘要： There is provided an electron emitting device including a substrate, a pair of electrodes formed on the substrate and being apart from each other, a pair of electrically conductive films formed on the electrodes, respectively, and being apart from each other, a distance between the electrically conductive films being shorter than a distance between the electrodes, and an electron emitting film formed between the electrically conductive films, the electron emitting film containing boron and at least one of carbon and nitrogen.

摘要翻译： 提供了一种电子发射器件，包括：衬底，形成在衬底上并彼此分开的一对电极，分别形成在电极上并彼此分开的一对导电膜， 导电膜比电极之间的距离短，以及形成在导电膜之间的电子发射膜，含有硼和至少一种碳和氮的电子发射膜。

公开(公告)号：US6046499A

公开(公告)日：2000-04-04

申请号：US824844

申请日：1997-03-26

申请人： Keiichi Yano ,  Hironori Asai

发明人： Keiichi Yano ,  Hironori Asai

IPC分类号： H01L23/367 ,  H01L23/498 ,  H01L23/34 ,  H01L23/48

CPC分类号： H01L23/49816 ,  H01L23/3677 ,  H01L24/45 ,  H01L2224/05599 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45565 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L24/48 ,  H01L24/73 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011

摘要： Disclosed is a semiconductor package having: a semiconductor chip; a package substrate; a wire connected to the semiconductor chip; and an electric connection member formed on the package substrate to electrically connect the wire to a printed board when the package substrate is mounted on the printed board. One surface of the package substrate has a first area in which the semiconductor chip is mounted and a second area in which the wire are arranged, and the other surface has a third area which is located in the rear of the second area and in which the electric connection member connects the wire to the printed board and a fourth area which is located in the rear of the first area. A heat-transfer member is provided in the fourth area and transmits heat generated by the semiconductor chip to the printed board through the package substrate.

摘要翻译： 公开了一种半导体封装，其具有：半导体芯片; 封装衬底; 连接到半导体芯片的导线; 以及电连接构件，形成在所述封装基板上，以在将所述封装基板安装在所述印刷电路板上时将所述导线电连接到印刷电路板。 封装基板的一个表面具有其中安装半导体芯片的第一区域和布置导线的第二区域，另一个表面具有位于第二区域的后部的第三区域， 电连接构件将导线连接到印刷电路板和位于第一区域后部的第四区域。 传热部件设置在第四区域中，并且通过封装基板将由半导体芯片产生的热量传递到印刷电路板。

公开(公告)号：US5969413A

公开(公告)日：1999-10-19

申请号：US855931

申请日：1997-05-14

申请人： Keiichi Yano ,  Kazuo Kimura ,  Hironori Asai ,  Jun Monma ,  Koji Yamakawa ,  Mitsuyoshi Endo ,  Hirohisa Osoguchi

发明人： Keiichi Yano ,  Kazuo Kimura ,  Hironori Asai ,  Jun Monma ,  Koji Yamakawa ,  Mitsuyoshi Endo ,  Hirohisa Osoguchi

IPC分类号： H01L23/10 ,  H01L23/15 ,  H01L23/28 ,  H01L23/495 ,  H01L23/02 ,  H01L23/12 ,  H01L23/48

CPC分类号： H01L23/10 ,  H01L23/15 ,  H01L23/49572 ,  H01L24/50 ,  H01L2924/01013 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/30107

摘要： A semiconductor chip is supported on a tape carrier provided with lead wirings. The semiconductor chip is electrically connected to the lead wirings. The semiconductor chip of this quality is bonded in combination with the pe carrier to an aluminum nitride substrate. The lead wirings provided on the carrier combine the two functions as an internal lead and an external lead. The semiconductor package of such a structure as is described above allows multi-terminal connection by the narrowing of pitches between the leads and permits provision of a miniature package excelling in the heat-radiating property. Alternatively, the lead wirings supported on the tape carrier and electrically connected to the semiconductor chip are utilized as internal leads. For the external leads, such lead frames as are bonded to the aluminum nitride substrate are used. The lead frames are electrically connected to the internal leads provided in the tape carrier.

摘要翻译： 半导体芯片被支撑在带有引线配线的带载体上。 半导体芯片电连接到引线配线。 该质量的半导体芯片与pe载体结合到氮化铝衬底上。 载体上提供的导线结合了作为内部引线和外部引线的两个功能。 如上所述的这种结构的半导体封装允许通过引线之间的间距变窄来实现多端子连接，并且允许提供具有优异的散热性能的微型封装。 或者，支撑在带载体上并电连接到半导体芯片的引线配线被用作内部引线。 对于外部引线，使用与氮化铝基板结合的引线框架。 引线框架电连接到设置在带式载体中的内部引线。

公开(公告)号：US5063121A

公开(公告)日：1991-11-05

申请号：US410863

申请日：1989-09-22

申请人： Hideki Sato ,  Nobuyuki Mizunoya ,  Hironori Asai ,  Kazuo Anzai ,  Tsuyoshi Hatano

发明人： Hideki Sato ,  Nobuyuki Mizunoya ,  Hironori Asai ,  Kazuo Anzai ,  Tsuyoshi Hatano

IPC分类号： C04B35/581 ,  C04B41/51 ,  C04B41/52 ,  C04B41/88 ,  C04B41/89 ,  H01L21/48 ,  H01L23/15 ,  H01L23/498 ,  H05K1/09 ,  H05K3/38

CPC分类号： C04B41/009 ,  C04B35/581 ,  C04B41/5133 ,  C04B41/52 ,  C04B41/88 ,  C04B41/89 ,  H01L21/4867 ,  H01L23/15 ,  H01L23/49866 ,  H05K1/0306 ,  C04B2111/00844 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K1/092 ,  H05K3/38 ,  Y10S428/901 ,  Y10T428/24917 ,  Y10T428/24926

摘要： Disclosed is:i) a nitride type ceramic substrate comprises; a nitride type ceramic sintered sheet; a conductive metallized layer formed on the nitride type ceramic sintered sheet; and a layer of a compound containing yttria and alumina, present in the vicinity of the interface between the nitride type ceramic sintered sheet and the metallized layer;ii) a circuit substrate comprises; a substrate comprising a nitride type ceramic sintered sheet; a metallized layer comprising molybdenum and tungsten as a main component and an activation metal added thereto formed on the substrate; and a layer of a compound containing yttria and alumina, present inside of the metallized layer and in the vicinty of the interface between the substrate and the metallized layer;iii) a surface conductive ceramic substrate which is characterized by comprising; a nitride type ceramic substrate; and a conductive metallized layer chiefly comprised of at least one of Mo and W, a group IVa active metal element and a fourth period transition metal (except for Ti), formed on the substrate; andiv) a surface conductive ceramic substrate which is characterized by comprising a nitride type ceramic substrate; an intermediate reactive layer chiefly comprised of a compound containing a grain boundary constitutent phase component of the ceramic substrate, and a compound of a group IVa active metal; and a conductive metallized layer chiefly comprised of at least one of molybdenum and tungsten, a nitride of a group IVa active metal and a composite compound comprising an oxide of a group IVa active metal and an oxide of a fourth period transition metal (except for titanium), formed on the substrate with the interpositon of the intermediate reactive layer.Disclosed is also a method for preparing these substrates and metallizing composition used therefor.According to this invention, a circuit substrate having a conductive metallized layer formed thereon with a high joint strength can be obtained.