摘要:
A semiconductor chip is supported on a tape carrier provided with lead wirings. The semiconductor chip is electrically connected to the lead wirings. The semiconductor chip of this quality is bonded in combination with the pe carrier to an aluminum nitride substrate. The lead wirings provided on the carrier combine the two functions as an internal lead and an external lead. The semiconductor package of such a structure as is described above allows multi-terminal connection by the narrowing of pitches between the leads and permits provision of a miniature package excelling in the heat-radiating property. Alternatively, the lead wirings supported on the tape carrier and electrically connected to the semiconductor chip are utilized as internal leads. For the external leads, such lead frames as are bonded to the aluminum nitride substrate are used. The lead frames are electrically connected to the internal leads provided in the tape carrier.
摘要:
A semiconductor ceramic multilayer package comprising an aluminum nitride substrate having a semiconductor element mounted on one surface thereof and a wiring pattern electrically connected to the semiconductor element, connecting terminals connected to the wiring pattern and disposed on the other surface of the aluminum nitride substrate, and a sealing member connected to the aluminum nitride substrate with a metallic bonding layer or a glass layer having a thickness of not more than 100 .mu.m in such a manner as to seal the semiconductor element possesses a notably improved heat-radiating property and accomplishes the object of increasing the number of pins and reducing the size of package.
摘要:
Disclosed is a bump formed on a pad which is provided on either a semiconductor chip or a package or a wiring substrate for input or output thereof, for making electric connection on the pad. The bump has: a projection projecting from the pad; a ball having conductivity and located above the pad; and a conductive bonding material for bonding the pad for and the ball, wherein creep strength of the ball is larger than strength of the conductive bonding material. With another conductive bonding material provided on the other pad of a wiring substrate or a package, the ball of the bump of the semiconductor chip or the package is placed close to another pad of the wiring substrate or package. The conductive bonding material of the other pad is heated and melted to connect the ball and the other pad of the wiring substrate or package by the conductive bonding material.
摘要:
A thin type semiconductor package having a low thermal resistance and a low electric resistance is disclosed, that comprises a nitride ceramic supporting substrate having a first main surface and a second main surface, the nitride ceramic supporting substrate having via-holes that pass through from the first main surface to the second main surface, a resin film having a wiring layer, the resin film being bonded to the first main surface of the supporting substrate, the wiring layer being electrically connected to an edge portion of the via-holes on the first main surface, the resin film having an opening region, a semiconductor chip directly mounted on the first main surface of the nitride ceramic supporting substrate, disposed at the opening region of the resin film, and electrically connected to the wiring layer of the resin film, and external connection terminals disposed on the edge portion of the via-holes of the second main surface.
摘要:
Disclosed is a semiconductor package having: a semiconductor chip; a package substrate; a wire connected to the semiconductor chip; and an electric connection member formed on the package substrate to electrically connect the wire to a printed board when the package substrate is mounted on the printed board. One surface of the package substrate has a first area in which the semiconductor chip is mounted and a second area in which the wire are arranged, and the other surface has a third area which is located in the rear of the second area and in which the electric connection member connects the wire to the printed board and a fourth area which is located in the rear of the first area. A heat-transfer member is provided in the fourth area and transmits heat generated by the semiconductor chip to the printed board through the package substrate.
摘要:
A semiconductor package is disclosed which is provided with a multilayer ceramic substrate such as, for example, a multilayer aluminum nitride substrate having a surface for mounting a semiconductor device and, at the same time, having an inner wiring layer electrically connected to the semiconductor device. On the surface of the multilayer ceramic substrate for forming terminals thereon, input and output terminals such as, for example, pin terminals and bump terminals electrically connected to the inner wiring layer. The input and output terminals embrace signal terminals, ground terminals, and power source terminals. The signal terminals among other terminals are so disposed that they may be each positioned adjacently to at least one ground terminal or power source terminal. This semiconductor package possesses perfect transmission properties even for signals of such a high frequency as exceeds the order of GHz. The dispersion of the transmission properties is small.
摘要:
A semiconductor package comprises an aluminum nitride substrate having a semiconductor element mounted thereon, a lead frame junctioned to the side of the aluminum nitride substrate directly contacting the mounted semiconductor element, and a ceramic sealing member junctioned to the aluminum nitride substrate so as to seal the semiconductor element. The lead frame has a coating layer of a nonmagnetic metallic material formed in a thickness of not more than 20 .mu.m on only one of the opposite surfaces of a lead frame matrix made of a ferromagnetic metal to which a bonding wire is to be junctioned. The layer of the nonmagnetic metallic material is formed by any of such thin film forming technique as the vacuum deposition technique, the spattering technique, and the plating technique. The coating layer formed on only one of the opposite surfaces of the lead frame matrix is capable of amply curbing the resistance and the dependency of inductance on frequency. The aluminum nitride substrate is capable of imparting an ideal ability to radiate heat. The semiconductor package enables a high-speed quality semiconductor element having such a high system clock frequency as is not less than 50 MHz to be operated stably.
摘要:
A sieving device including a hollow cylindrical body, a filter disposed at a bottom portion of the hollow cylindrical body, and a blade configured to rotate in close proximity to the filter around a rotation axis thereof crossing the filter to thereby stir powder supplied to the hollow cylindrical body.
摘要:
A system for performing user selection of an option is provided. A user interface displays one or more options. Each option is associated with a sequence of a looped motion. In response, a user will perform one of the displayed sequences of looped motion. User motion data is received from one or more sensors connected to the computing device. The user's progress of performing the sequence of the looped motion is determined based on the user motion data matching one or more looped motion criteria associated with the performed looped motion. The user's progress of performing the sequence of the looped motion is displayed to the user. A selection of the option associated with the performed looped motion is automatically triggered in response to determining that the user has completed the sequence of looped motion.
摘要:
A light emitting apparatus 10 includes an aluminum nitride co-fired substrate 11 and a light emitting device 12 arranged on a front surface of the co-fired substrate, in which the front surface of the aluminum nitride substrate 11 bearing the light emitting device 12 is mirror-polished so as to have a surface roughness of 0.3 μm Ra or less, and the light emitting apparatus 10 further includes a vapor-deposited metal film 14 and via holes 15. The vapor-deposited metal film 14 is arranged on the front surface of the aluminum nitride substrate 11 around the light emitting device 12 and has a reflectivity of 90% or more with respect to light emitted from the light emitting device 12. The via holes 15 penetrates the aluminum nitride substrate 11 from the front surface bearing the light emitting device 12 to the rear surface to thereby allow conduction to the light emitting device 12 from the rear surface. This configuration can reduce light emitting apparatuses in size and can provide light emitting apparatuses that are excellent in heat radiation performance, allow a larger current to pass therethrough, and can have a significantly increased luminance with a high luminous efficiency.