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72 条记录 (耗时 0.02 秒)

    Transferred thin film transistor and method for manufacturing the same
    32.
    发明授权
    Transferred thin film transistor and method for manufacturing the same 有权
    转移薄膜晶体管及其制造方法

    公开(公告)号：US08404532B2

    公开(公告)日：2013-03-26

    申请号：US12782303

    申请日：2010-05-18

    申请人： Jae Bon Koo ,  Jong-Hyun Ahn ,  Seung Youl Kang ,  Hasan Musarrat ,  In-Kyu You ,  Kyoung Ik Cho

    发明人： Jae Bon Koo ,  Jong-Hyun Ahn ,  Seung Youl Kang ,  Hasan Musarrat ,  In-Kyu You ,  Kyoung Ik Cho

    IPC分类号： H01L21/336

    CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78603

    摘要： Provided are a transferred thin film transistor and a method of manufacturing the same. The method includes: forming a source region and a drain region that extend in a first direction in a first substrate and a channel region between the source region and the drain region; forming trenches that extend in a second direction in the first substrate to define an active layer between the trenches, the second direction intersecting the first direction; separating the active layer between the trenches from the first substrate by performing an anisotropic etching process on the first substrate inside the trenches; attaching the active layer on a second substrate; and forming a gate electrode in the first direction on the channel region of the active layer.

    摘要翻译： 提供了一种转移的薄膜晶体管及其制造方法。 该方法包括：形成在第一衬底中沿第一方向延伸的源极区域和漏极区域以及源极区域和漏极区域之间的沟道区域; 形成在所述第一衬底中沿第二方向延伸的沟槽，以在所述沟槽之间限定有源层，所述第二方向与所述第一方向相交; 通过在所述沟槽内的所述第一衬底上进行各向异性蚀刻工艺，从所述第一衬底分离所述沟槽之间的有源层; 将活性层附着在第二基底上; 以及在有源层的沟道区上沿第一方向形成栅电极。

    ORGANIC THIN FILM TRANSISTORS AND METHODS OF FORMING THE SAME
    33.
    发明申请
    ORGANIC THIN FILM TRANSISTORS AND METHODS OF FORMING THE SAME 审中-公开
    有机薄膜晶体管及其形成方法

    公开(公告)号：US20130005079A1

    公开(公告)日：2013-01-03

    申请号：US13616668

    申请日：2012-09-14

    申请人： Yong-Young NOH ,  In-Kyu You ,  Jae Bon Koo

    发明人： Yong-Young NOH ,  In-Kyu You ,  Jae Bon Koo

    IPC分类号： H01L51/40

    CPC分类号： H01L51/0537 ,  H01L51/0541 ,  H01L51/0545

    摘要： Provided is an organic thin film transistor, method of forming the same, and a memory device employing the same. The organic thin film transistor includes a substrate, a source electrode and a drain electrode on the substrate, an active layer on the substrate between the source electrode and the drain electrode, a gate electrode controlling the active layer, and an organic dielectric layer between the active layer and the gate electrode. The organic dielectric layer includes nanoparticles, a hydrophilic polymer surrounding the nanoparticles, and a hydrophobic polymer.

    摘要翻译： 提供了一种有机薄膜晶体管，其形成方法和使用其的存储器件。 有机薄膜晶体管包括在基板上的基板，源电极和漏电极，源电极和漏电极之间的基板上的有源层，控制有源层的栅极电极和位于 有源层和栅电极。 有机介电层包括纳米颗粒，围绕纳米颗粒的亲水性聚合物和疏水聚合物。

    Method of manufacturing thin film transistor and thin film transistor substrate
    34.
    发明授权
    Method of manufacturing thin film transistor and thin film transistor substrate 有权
    制造薄膜晶体管和薄膜晶体管基板的方法

    公开(公告)号：US08119463B2

    公开(公告)日：2012-02-21

    申请号：US12507725

    申请日：2009-07-22

    申请人： Jae Bon Koo ,  In-Kyu You ,  Seongdeok Ahn ,  Kyoung Ik Cho

    发明人： Jae Bon Koo ,  In-Kyu You ,  Seongdeok Ahn ,  Kyoung Ik Cho

    IPC分类号： H01L21/00 ,  H01L21/84

    CPC分类号： H01L29/78603 ,  H01L27/1266 ,  H01L29/66757 ,  H01L29/78618

    摘要： Provided is a method of manufacturing a thin film transistor that can improve self-alignment. In this method, a semiconductor layer comprising a first doped region, a second doped region and a channel region is formed on a sacrificial layer on a first substrate. Next, the semiconductor layer is separated from the first substrate and is then coupled on a second substrate. Next, a dielectric layer is formed on the second substrate and the semiconductor layer, and a first photoresist layer is formed on the dielectric layer. Thereafter, the first photoresist layer is exposed to light from a rear surface of the second substrate by using the first doped region and the second doped region as a mask, to form a first mask pattern. Next, a gate electrode overlapping the channel region is formed on the dielectric layer by using the first mask pattern as a mask, and a source electrode and a drain electrode connected to the first doped region and the second doped region, respectively are formed to complete a thin film transistor.

    摘要翻译： 提供了一种可以改善自对准的薄膜晶体管的制造方法。 在该方法中，在第一衬底上的牺牲层上形成包括第一掺杂区域，第二掺杂区域和沟道区域的半导体层。 接下来，半导体层与第一衬底分离，然后耦合在第二衬底上。 接下来，在第二基板和半导体层上形成电介质层，在电介质层上形成第一光致抗蚀剂层。 此后，通过使用第一掺杂区域和第二掺杂区域作为掩模，将第一光致抗蚀剂层从第二基板的后表面曝光，以形成第一掩模图案。 接下来，通过使用第一掩模图案作为掩模在介电层上形成与沟道区重叠的栅电极，分别形成连接到第一掺杂区和第二掺杂区的源电极和漏极，以完成 薄膜晶体管。

    ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    37.
    发明申请
    ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
    有机薄膜晶体管及其制造方法

    公开(公告)号：US20100140596A1

    公开(公告)日：2010-06-10

    申请号：US12498910

    申请日：2009-07-07

    申请人： Yong-Young Noh ,  Seok-Ju Kang ,  Jae Bon Koo ,  In-Kyu You ,  Kang-Jun Baeg

    发明人： Yong-Young Noh ,  Seok-Ju Kang ,  Jae Bon Koo ,  In-Kyu You ,  Kang-Jun Baeg

    IPC分类号： H01L51/30 ,  H01L51/40

    CPC分类号： H01L51/052 ,  H01L51/0541 ,  H01L51/0545

    摘要： Provided is an organic thin film transistor and method of forming the same. The organic thin film transistor can decrease threshold voltage and driving voltage by forming a thin organic dielectric layer in a lamella structure using a diblock copolymer including a hydrophilic polymer with high permittivity and a hydrophobic polymer with low permittivity together. Also, the method can simplify the manufacturing process by forming an organic dielectric layer including polymers having two different physical properties through one spin coating.

    摘要翻译： 提供一种有机薄膜晶体管及其形成方法。 有机薄膜晶体管可以通过使用包含具有高介电常数的亲水性聚合物的二嵌段共聚物和具有低介电常数的疏水性聚合物在一起的层状结构中形成薄的有机介电层来降低阈值电压和驱动电压。 此外，该方法可以通过一种旋涂形成包含具有两种不同物理性质的聚合物的有机介电层来简化制造过程。

    METHOD OF LOCALLY CRYSTALLIZING ORGANIC THIN FILM AND METHOD OF FABRICATING ORGANIC THIN FILM TRANSISTOR USING THE SAME
    38.
    发明申请
    METHOD OF LOCALLY CRYSTALLIZING ORGANIC THIN FILM AND METHOD OF FABRICATING ORGANIC THIN FILM TRANSISTOR USING THE SAME 审中-公开
    有机薄膜的局部结晶方法及使用其制造有机薄膜晶体管的方法

    公开(公告)号：US20100035376A1

    公开(公告)日：2010-02-11

    申请号：US12424760

    申请日：2009-04-16

    申请人： Yong Young Noh ,  Kang Jun Baeg ,  In Kyu You ,  Jae Bon Koo

    发明人： Yong Young Noh ,  Kang Jun Baeg ,  In Kyu You ,  Jae Bon Koo

    IPC分类号： H01L51/40

    CPC分类号： H01L51/0004 ,  H01L51/0027 ,  H01L51/0036 ,  H01L51/0545 ,  H01L51/0558

    摘要： A method of partially crystallizing an organic thin film and a method of fabricating an organic thin film transistor (OTFT) are provided. An organic thin film used as an active layer of an OTFT is partially coated with an organic solvent by direct graphic art printing or partially annealed by laser beam irradiation, thereby local improving the crystallinity of the organic thin film. The charge mobility of the OTFT can be improved and crosstalk between devices can be reduced without additional patterning the organic thin film.

    摘要翻译： 提供部分结晶有机薄膜的方法和制造有机薄膜晶体管（OTFT）的方法。 用作OTFT的有源层的有机薄膜通过直接图形化印刷部分地涂覆有机溶剂，或者通过激光束照射部分地进行退火，从而局部改善有机薄膜的结晶度。 可以改善OTFT的电荷迁移率，并且可以减少器件之间的串扰，而无需额外构图有机薄膜。