公开(公告)号：US20080032436A1

公开(公告)日：2008-02-07

申请号：US11896634

申请日：2007-09-04

申请人： Jeong-wook Lee ,  Vassili Leniachine ,  Mi-jeong Song ,  Suk-ho Yoon ,  Hyun-soo Kim

发明人： Jeong-wook Lee ,  Vassili Leniachine ,  Mi-jeong Song ,  Suk-ho Yoon ,  Hyun-soo Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/24 ,  H01L33/0075

摘要： A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle α (35°≦α≦90°) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle β (35°≦β≦α) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle γ (20°≦γ≦β) with respect to the upper surface of the substrate; and an n-electrode formed on a predetermined area of the n-GaN layer to correspond to the p-electrode.

摘要翻译： 提供了一种发光二极管（LED）和方法，用于制造具有改进结构的LED，以获得更好的发光效率和更好的光输出性能。 LED包括形成在基板上的n-GaN层，以具有多个突起，从而具有不平坦表面，其中突起的侧表面以第一倾斜角α（35°<=α<= 90°）倾斜 ）相对于衬底的上表面; 在n-GaN层的表面上保形地形成的有源层，其中形成在突起的侧表面上的有源层的表面相对于第二倾斜角β（35°，β=α）倾斜， 到基板的上表面; 在有源层的表面上保形地形成的p-GaN层，其中形成在有源层的倾斜部分的表面上的p-GaN层的表面以第三倾斜角γ（20°，γ= 相对于衬底的上表面<=β）; 以及形成在n-GaN层的预定区域上以对应于p电极的n电极。

公开(公告)号：US20070262330A1

公开(公告)日：2007-11-15

申请号：US11737479

申请日：2007-04-19

申请人： Jeong-wook LEE ,  Jin-seo IM ,  Bok-ki MIN ,  Kwang-hyeon BAIK ,  Heon-su JEON

发明人： Jeong-wook LEE ,  Jin-seo IM ,  Bok-ki MIN ,  Kwang-hyeon BAIK ,  Heon-su JEON

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/007

摘要： A semiconductor light emitting device having a multiple pattern structure greatly increases light extraction efficiency. The semiconductor light emitting device includes a substrate and a semiconductor layer, an active layer, and an electrode layer formed on the substrate, a first pattern defining a first corrugated structure between the substrate and the semiconductor layer, and a second pattern defining a second corrugated structure on the first corrugated structure of the first pattern.

摘要翻译： 具有多重图案结构的半导体发光器件大大提高了光提取效率。 半导体发光器件包括衬底和半导体层，有源层和形成在衬底上的电极层，在衬底和半导体层之间限定第一波纹状结构的第一图案和限定第二波纹状的第二图案 结构上第一个波纹结构的第一个图案。

公开(公告)号：US20070012933A1

公开(公告)日：2007-01-18

申请号：US11448832

申请日：2006-06-08

申请人： Jeong-wook Lee ,  Vassili Leniachine ,  Mi-jeong Song ,  Suk-ho Yoon ,  Hyun-soo Kim

发明人： Jeong-wook Lee ,  Vassili Leniachine ,  Mi-jeong Song ,  Suk-ho Yoon ,  Hyun-soo Kim

IPC分类号： H01L33/00

CPC分类号： H01L33/24 ,  H01L33/0075

摘要： A light emitting diode (LED) and a method are provided for fabricating the a LED with an improved structure for better light emitting efficiency and better light output performance. The LED includes an n-GaN layer formed on a substrate to have a plurality of protrusions, thereby having an uneven surface, wherein a side surface of the protrusions is inclined with a first inclination angle α (35°≦α≦90°) with respect to an upper surface of the substrate; an active layer conformally formed on the surface of the n-GaN layer, wherein the surface of the active layer formed on the side surface of the protrusions is inclined with a second inclination angle β (35°≦β≦α) with respect to the upper surface of the substrate; a p-GaN layer conformally formed on the surface of the active layer, wherein the surface of the p-GaN layer formed on the surface of the inclined portion of the active layer is inclined with a third inclination angle γ (20°≦γ

摘要翻译： 提供了一种发光二极管（LED）和方法，用于制造具有改进结构的LED，以获得更好的发光效率和更好的光输出性能。 LED包括形成在基板上的n-GaN层，以具有多个突起，从而具有不平坦表面，其中突起的侧表面以第一倾斜角α（35°<=α<= 90°）倾斜 ）相对于衬底的上表面; 在n-GaN层的表面上保形地形成的有源层，其中形成在突起的侧表面上的有源层的表面相对于第二倾斜角β（35°，β=α）倾斜， 到基板的上表面; 在有源层的表面上保形地形成的p-GaN层，其中形成在有源层的倾斜部分的表面上的p-GaN层的表面以第三倾斜角γ（20°，γ= β）相对于所述基板的上表面; 以及形成在n-GaN层的预定区域上以对应于p电极的n电极。

公开(公告)号：US20110269183A1

公开(公告)日：2011-11-03

申请号：US12808533

申请日：2008-12-18

申请人： Sang Yup Lee ,  Jeong Wook Lee ,  Hyohak Song ,  Ji Mahn Kim ,  Sol Choi ,  Jin Hwan Park

发明人： Sang Yup Lee ,  Jeong Wook Lee ,  Hyohak Song ,  Ji Mahn Kim ,  Sol Choi ,  Jin Hwan Park

IPC分类号： C12P21/00 ,  C12N9/26 ,  C12N15/63 ,  C12N15/56 ,  C12N1/19 ,  C12N1/21 ,  C12P1/04 ,  C12P1/02 ,  C12N9/12 ,  C12N1/15

CPC分类号： C12N15/70 ,  C12N1/20 ,  C12N9/1205 ,  C12N9/16 ,  C12N9/2408 ,  C12P1/04 ,  C12P7/065 ,  C12P7/40 ,  C12P7/46 ,  C12P7/54 ,  C12P7/56 ,  C12P13/08 ,  C12Y207/01004 ,  C12Y207/01069 ,  C12Y302/01026 ,  Y02E50/17

摘要： The present invention relates to a recombinant microorganism capable of metabolizing sucrose, and more particularly to a recombinant microorganism capable of metabolizing sucrose in which a gene encoding sucrose phosphotransferase and/or a gene encoding sucrose-6-phosphate hydrolase is introduced or to a recombinant microorganism capable of metabolizing sucrose in which a gene encoding β-fructofuranosidase is introduced. According to the present invention, a recombinant microorganism capable of using inexpensive sucrose as a carbon source instead of expensive glucose is provided. In addition, in a process of culturing microorganisms which have been incapable of using sucrose as a carbon source, sucrose can substitute for other carbon sources including glucose.

摘要翻译： 本发明涉及能够代谢蔗糖的重组微生物，更具体地说，涉及能够代谢蔗糖的重组微生物，其中导入编码蔗糖磷酸转移酶和/或编码蔗糖-6-磷酸水解酶的基因的基因或重组微生物 能够代谢其中引入编码“呋喃果糖苷酶”的基因的蔗糖。 根据本发明，提供了能够使用廉价的蔗糖作为碳源代替昂贵的葡萄糖的重组微生物。 此外，在不能使用蔗糖作为碳源的微生物的培养方法中，蔗糖可以替代包括葡萄糖在内的其它碳源。

公开(公告)号：US20110260646A1

公开(公告)日：2011-10-27

申请号：US13092468

申请日：2011-04-22

申请人： Kyung-mi MOON ,  Young-hee Song ,  Ill-heung Choi ,  Jeong-wook Lee ,  Young-jin Lee

发明人： Kyung-mi MOON ,  Young-hee Song ,  Ill-heung Choi ,  Jeong-wook Lee ,  Young-jin Lee

IPC分类号： H05B37/02 ,  F21L4/02 ,  H01L33/08

CPC分类号： H01L25/075 ,  H01L25/0753 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/12044 ,  H01L2924/3025 ,  H01L2933/0066 ,  H01L2924/00014 ,  H01L2924/00

摘要： Lead frames for light emitting device packages, light emitting device packages, and illumination apparatuses employing the light emitting device packages. The lead frame including a plurality of mounting portions on which a plurality of light emitting device chips are mounted; a plurality of connection portions for circuit connecting the plurality of light emitting device chips; a terminal portion extended from the plurality of connection portions. The light emitting device package is formed by directly mounting the plurality of light emitting device chips on the lead frame and packaging the mounted light emitting device chips on the lead frame. The lead frame includes a plurality of connection portions for circuit connecting the plurality of light emitting device chips and a terminal portion in which a part of a circuit thereof is exposed.

摘要翻译： 用于发光器件封装的引线框架，发光器件封装以及采用发光器件封装的照明设备。 所述引线框架包括多个安装部分，所述多个安装部分安装有多个发光器件芯片; 用于电路连接多个发光器件芯片的多个连接部分; 从所述多个连接部分延伸的端子部分。 发光器件封装通过将多个发光器件芯片直接安装在引线框架上并将安装的发光器件芯片封装在引线框架上而形成。 引线框架包括用于电路连接多个发光器件芯片的多个连接部分和其一部分电路暴露的端子部分。

公开(公告)号：US07973303B2

公开(公告)日：2011-07-05

申请号：US12580152

申请日：2009-10-15

申请人： Tan Sakong ,  Youn Joon Sung ,  Jeong Wook Lee

发明人： Tan Sakong ,  Youn Joon Sung ,  Jeong Wook Lee

IPC分类号： H01L29/15

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/12

摘要： A nitride semiconductor device includes n-type and p-type nitride semiconductor layers, an active layer, the active layer having a lamination of quantum barrier layers and quantum well layers, a thermal stress control layer disposed between the n-type nitride semiconductor layer and the active layer, and formed of a material having a smaller thermal expansion coefficient than the n-type and p-type nitride semiconductor layers, and a lattice stress control layer disposed between the thermal stress control layer and the active layer, and including a first layer and a second layer.

摘要翻译： 氮化物半导体器件包括n型和p型氮化物半导体层，有源层，具有量子势垒层和量子阱层叠层的有源层，设置在n型氮化物半导体层和n型氮化物半导体层之间的热应力控制层 所述活性层由具有比n型和p型氮化物半导体层更小的热膨胀系数的材料形成，以及布置在所述热应力控制层和所述有源层之间的晶格应力控制层，并且包括第一 层和第二层。

公开(公告)号：US07888153B2

公开(公告)日：2011-02-15

申请号：US12805132

申请日：2010-07-14

申请人： Hyun-soo Kim ,  Kyoung-kook Kim ,  Hyung-kun Kim ,  Kwang-ki Choi ,  Jeong-wook Lee

发明人： Hyun-soo Kim ,  Kyoung-kook Kim ,  Hyung-kun Kim ,  Kwang-ki Choi ,  Jeong-wook Lee

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/44

摘要： Provided is a method of manufacturing a vertical light emitting device. The method of manufacturing the vertical light emitting device may include forming an emissive layer including a n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate, forming a first trench dividing the emissive layer into light emitting device units in which the emissive layer remains on the lower part of the first trench to a desired, or alternatively, a predetermined thickness, forming a passivation layer on the emissive layer, forming a p-type electrode on the p-type semiconductor layer of the emissive layer, forming a metal supporting layer on the passivation layer and the p-type electrode, removing the substrate, removing a remaining portion of the emissive layer when the surface of the emissive layer is exposed by removing the substrate, forming a n-type electrode on the n-type semiconductor layer of the emissive layer, and cutting the metal supporting layer to divide the emissive layer into the light emitting device units.

摘要翻译： 提供一种垂直发光装置的制造方法。 制造垂直发光器件的方法可以包括在衬底上形成包括n型半导体层，有源层和p型半导体层的发射层，形成将发光层划分成发光器件的第一沟槽 其中发射层保留在第一沟槽的下部上的单元到期望的或可选的预定厚度，在发射层上形成钝化层，在p型半导体层上形成p型电极 发射层，在钝化层和p型电极上形成金属支撑层，去除衬底，当发射层的表面通过去除衬底而暴露时去除发射层的剩余部分，形成n型 电极，并且切割金属支撑层以将发光层划分为发光器件单元。

公开(公告)号：US20110006337A1

公开(公告)日：2011-01-13

申请号：US12842141

申请日：2010-07-23

申请人： Hyun-soo Kim ,  Jeong-wook Lee

发明人： Hyun-soo Kim ,  Jeong-wook Lee

IPC分类号： H01L33/00

CPC分类号： H01L33/382

摘要： The semiconductor light emitting device having a protrusion and recess structure includes: a lower clad layer disposed on a substrate; an active layer formed on one portion of a top surface of the lower clad layer; an upper clad layer formed on the active layer; a first electrode formed on the upper clad layer; and a second electrode that is formed on a protrusion and recess structural pattern region formed on a portion of the top surface of the lower clad layer not occupied by the active layer.

摘要翻译： 具有突起和凹陷结构的半导体发光器件包括：设置在基板上的下覆盖层; 形成在所述下包层的顶表面的一部分上的有源层; 形成在有源层上的上覆层; 形成在所述上包层上的第一电极; 以及第二电极，其形成在形成在未被有源层占据的下包层的顶表面的一部分上的突起和凹陷结构图案区域上。

公开(公告)号：US07759140B2

公开(公告)日：2010-07-20

申请号：US11450389

申请日：2006-06-12

申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Jae-hee Cho ,  Ho-sun Paek

发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Jae-hee Cho ,  Ho-sun Paek

IPC分类号： H01L21/00

CPC分类号： H01L33/12 ,  H01L33/22

摘要： Provided is a light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate having at least one protruded portion with a curved surface in which a consistent defect density and uniform stress distribution can be obtained even when the growth of the semiconductor crystal layer and the forming of the light-emitting device are completed. In addition, the light-emitting device has a high the light extraction efficiency for extracting light generated at an electroluminescense layer externally.

摘要翻译： 提供了一种发光器件及其制造方法。 发光装置包括具有至少一个具有弯曲表面的突出部分的基板，其中即使当半导体晶体层的生长和发光装置的形成是均匀的时，也可获得一致的缺陷密度和均匀的应力分布 完成 此外，发光装置具有高的外部提取在电致发光层产生的光的光提取效率。

公开(公告)号：US20100081221A1

公开(公告)日：2010-04-01

申请号：US12630880

申请日：2009-12-04

申请人： Jeong-wook LEE ,  Youn-joon Sung ,  Ho-sun Paek

发明人： Jeong-wook LEE ,  Youn-joon Sung ,  Ho-sun Paek

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01L33/007 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22

摘要： A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.

摘要翻译： 提供具有纹理结构的半导体发光二极管及其制造方法。 半导体发光二极管包括形成为纹理结构的第一半导体层，形成在图案化的第一半导体层的纹理结构之间的中间层，以及顺序地形成在第一半导体层上的第二半导体层，有源层和第三半导体层 第一半导体层和中间层。