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    Method of manufacturing vertical light emitting device
    8.
    发明授权
    Method of manufacturing vertical light emitting device 有权
    制造垂直发光装置的方法

    公开(公告)号：US07781246B2

    公开(公告)日：2010-08-24

    申请号：US11882259

    申请日：2007-07-31

    申请人： Hyun-soo Kim ,  Kyoung-kook Kim ,  Hyung-kun Kim ,  Kwang-ki Choi ,  Jeong-wook Lee

    发明人： Hyun-soo Kim ,  Kyoung-kook Kim ,  Hyung-kun Kim ,  Kwang-ki Choi ,  Jeong-wook Lee

    IPC分类号： H01L21/00

    CPC分类号： H01L33/0079 ,  H01L33/44

    摘要： Provided is a method of manufacturing a vertical light emitting device. The method of manufacturing the vertical light emitting device may include forming an emissive layer including a n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate, forming a first trench dividing the emissive layer into light emitting device units in which the emissive layer remains on the lower part of the first trench to a desired, or alternatively, a predetermined thickness, forming a passivation layer on the emissive layer, forming a p-type electrode on the p-type semiconductor layer of the emissive layer, forming a metal supporting layer on the passivation layer and the p-type electrode, removing the substrate, removing a remaining portion of the emissive layer when the surface of the emissive layer is exposed by removing the substrate, forming a n-type electrode on the n-type semiconductor layer of the emissive layer, and cutting the metal supporting layer to divide the emissive layer into the light emitting device units.

    摘要翻译： 提供一种垂直发光装置的制造方法。 制造垂直发光器件的方法可以包括在衬底上形成包括n型半导体层，有源层和p型半导体层的发射层，形成将发光层划分成发光器件的第一沟槽 其中发射层保留在第一沟槽的下部上的单元到期望的或可选的预定厚度，在发射层上形成钝化层，在p型半导体层上形成p型电极 发射层，在钝化层和p型电极上形成金属支撑层，去除衬底，当发射层的表面通过去除衬底而暴露时去除发射层的剩余部分，形成n型 电极，并且切割金属支撑层以将发光层划分为发光器件单元。

    Semiconductor light emitting device having textured structure and method of manufacturing the same
    9.
    发明授权
    Semiconductor light emitting device having textured structure and method of manufacturing the same 有权
    具有纹理结构的半导体发光器件及其制造方法

    公开(公告)号：US07655959B2

    公开(公告)日：2010-02-02

    申请号：US11293273

    申请日：2005-12-05

    申请人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek

    发明人： Jeong-wook Lee ,  Youn-joon Sung ,  Ho-sun Paek

    IPC分类号： H01L21/00

    CPC分类号： H01L33/12 ,  H01L33/007 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22

    摘要： A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.

    摘要翻译： 提供具有纹理结构的半导体发光二极管及其制造方法。 半导体发光二极管包括形成为纹理结构的第一半导体层，形成在图案化的第一半导体层的纹理结构之间的中间层，以及顺序地形成在第一半导体层上的第二半导体层，有源层和第三半导体层 第一半导体层和中间层。

    Semiconductor light emitting diode having efficiency and method of manufacturing the same
    10.
    发明授权
    Semiconductor light emitting diode having efficiency and method of manufacturing the same 有权
    具有效率的半导体发光二极管及其制造方法

    公开(公告)号：US07642561B2

    公开(公告)日：2010-01-05

    申请号：US11294403

    申请日：2005-12-06

    申请人： Jeong-wook Lee ,  Youn-joon Sung

    发明人： Jeong-wook Lee ,  Youn-joon Sung

    IPC分类号： H01L29/22

    CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/12

    摘要： Provided is a semiconductor light emitting diode having a textured structure formed on a substrate. In a method of manufacturing the semiconductor light emitting diode, a metal layer is formed on the substrate, and a metal oxide layer having holes is formed by anodizing the metal layer. The metal oxide layer itself can be used as a textured structure pattern, or the textured structure pattern can be formed by forming holes in the substrate or a material layer under the metal oxide layer corresponding to the holes of the metal oxide layer. The manufacture of the semiconductor light emitting diode is completed by sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on the textured structure pattern.

    摘要翻译： 提供了一种在基板上形成纹理结构的半导体发光二极管。 在制造半导体发光二极管的方法中，在基板上形成金属层，通过阳极氧化金属层形成具有孔的金属氧化物层。 金属氧化物层本身可以用作纹理结构图案，或者纹理结构图案可以通过在基板中形成孔或在对应于金属氧化物层的孔的金属氧化物层下面的材料层来形成。 通过在纹理结构图案上依次形成第一半导体层，有源层和第二半导体层来完成半导体发光二极管的制造。