公开(公告)号：US20150162223A1

公开(公告)日：2015-06-11

申请号：US14626277

申请日：2015-02-19

Applicant: Akio UI ,  Hisataka HAYASHI ,  Takeshi KAMINATSUI ,  Shinji HIMORI ,  Norikazu YAMADA ,  Takeshi OHSE ,  Jun ABE

Inventor： Akio UI ,  Hisataka HAYASHI ,  Takeshi KAMINATSUI ,  Shinji HIMORI ,  Norikazu YAMADA ,  Takeshi OHSE ,  Jun ABE

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/66 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01L21/67069 ,  H01J37/32009 ,  H01J37/32027 ,  H01J37/32045 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32137 ,  H01J37/32532 ,  H01J2237/3341 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67253 ,  H01L22/14 ,  H01L22/26

Abstract: There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.

Abstract translation: 提供了一种基板处理装置和基板处理方法，其实现有效地降低电极上的基板的电压变化，以减少进入基板的离子的入射能量的变化。 基板处理装置包括：第一电极，其在第一电极的主表面上保持基板; 面对所述第一电极的第二电极; RF电源，其向所述第一电极施加频率等于或高于40MHz的RF电压; 以及脉冲电压施加单元，通过将所述脉冲电压叠加在所述RF电压上，向所述第一电极施加根据时间的流逝而减小的脉冲电压。

公开(公告)号：US08821684B2

公开(公告)日：2014-09-02

申请号：US12363070

申请日：2009-01-30

Applicant: Akio Ui ,  Naoki Tamaoki ,  Takashi Ichikawa ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

Inventor： Akio Ui ,  Naoki Tamaoki ,  Takashi Ichikawa ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

IPC: C23F1/00 ,  C23C16/50 ,  H01L21/306 ,  H01J37/32

CPC classification number: H01J37/32027 ,  H01J37/32045 ,  H01J37/32091

Abstract: A substrate plasma processing apparatus includes a substrate holding electrode and a counter electrode which are arranged in a chamber, a high frequency generating device which applies a high frequency of 50 MHZ or higher to the substrate holding electrode, a DC negative pulse generating device which applies a DC negative pulse voltage in a manner of superimposing on the high frequency, and a controller controlling to cause intermittent application of the high frequency and cause intermittent application of the DC negative pulse voltage according to the timing of on or off of the high frequency.

Abstract translation: 衬底等离子体处理装置包括布置在腔室中的衬底保持电极和对电极，向衬底保持电极施加50MHz以上的高频的高频发生装置，应用了DC负脉冲发生装置 以高频重叠的方式设置直流负脉冲电压，以及控制器，根据高频开启或关闭的定时控制高频频率的间歇施加，直流负脉冲电压的间歇施加。

公开(公告)号：US08764288B2

公开(公告)日：2014-07-01

申请号：US13476264

申请日：2012-05-21

Applicant: Jun Abe ,  Tatsuo Matsudo ,  Chishio Koshimizu

Inventor： Jun Abe ,  Tatsuo Matsudo ,  Chishio Koshimizu

IPC: G01J5/00 ,  G01B9/02

CPC classification number: G01J5/02 ,  G01K1/026 ,  G01K11/125

Abstract: A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes an attenuator that attenuates the reference beam reflected from the reference beam reflector to thereby make an intensity thereof closer to an intensity of the measurement beam reflected from the temperature measurement object.

Abstract translation: 温度测量装置包括光源，第一分离器，第二分离器，参考光束反射器，光程长度调节器，参考光束传输部件，第一至第N测量光束传输部件和光电检测器。 温度测量装置还包括衰减器，衰减从参考光束反射器反射的参考光束，从而使其强度更接近于从温度测量对象反射的测量光束的强度。

公开(公告)号：US08747609B2

公开(公告)日：2014-06-10

申请号：US12888664

申请日：2010-09-23

Applicant: Hachishiro Iizuka ,  Jun Abe ,  Yuki Mochizuki

Inventor： Hachishiro Iizuka ,  Jun Abe ,  Yuki Mochizuki

IPC: H01L21/3065 ,  C23F1/00 ,  C23C16/00

CPC classification number: H01J37/3244 ,  H01J37/3266

Abstract: A plasma processing apparatus includes a shower head that is installed within a processing chamber for processing a substrate therein so as to face a mounting table for mounting the substrate thereon and supplies a gas toward the substrate in a shower pattern through a plurality of gas discharge holes provided in a facing surface of the shower head facing the mounting table; a plurality of gas exhaust holes formed through the shower head to be extended from the facing surface of the shower head to an opposite surface from the facing surface; a multiple number of rod-shaped magnet pillars standing upright in a gas exhaust space communicating with the gas exhaust holes on the side of the opposite surface; and a driving unit that varies a distance between the magnet pillars and the gas exhaust holes by moving at least a part of the magnet pillars.

Abstract translation: 一种等离子体处理装置，包括安装在用于处理基板的处理室内的淋浴喷头，面对用于将基板安装在其上的安装台，并通过多个气体排出孔向喷射基板喷射气体 设置在所述淋浴喷头的面向所述安装台的面对面上; 多个排气孔，其形成为穿过所述淋浴喷头，从所述喷淋头的相对表面延伸到与所述相对表面相反的表面; 多个杆状磁体柱直立放置在与相对表面侧的排气孔连通的排气空间中; 以及驱动单元，其通过移动至少一部分磁体柱来改变磁体柱和排气孔之间的距离。

公开(公告)号：US07952717B2

公开(公告)日：2011-05-31

申请号：US12043406

申请日：2008-03-06

Applicant: Jun Abe ,  Tatsuo Matsudo ,  Chishio Koshimizu

Inventor： Jun Abe ,  Tatsuo Matsudo ,  Chishio Koshimizu

IPC: G01B9/02

CPC classification number: G01K11/125

Abstract: A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes a controller that stores, as initial peak position data, positions of interference peaks respectively measured in advance by irradiating the first to the nth measuring beam onto the first to the nth measurement point of the temperature measurement object, and compares the initial peak position data to positions of interference peaks respectively measured during a temperature measurement to thereby estimate a temperature at each of the first to the nth measurement point.

Abstract translation: 温度测量装置包括光源，第一分离器，第二分离器，参考光束反射器，光程长度调节器，参考光束传输部件，第一至第N测量光束传输部件和光电检测器。 温度测量装置还包括控制器，该控制器通过将第一至第N测量光束照射到温度测量对象的第一至第N测量点上，预先分别测量的干扰峰的位置作为初始峰值位置数据，并将其进行比较 初始峰值位置数据分别在温度测量期间测量的干涉峰位置，从而估计第一至第n测量点中的每一个处的温度。

公开(公告)号：US20100206482A1

公开(公告)日：2010-08-19

申请号：US12698616

申请日：2010-02-02

Applicant: Tatsuo MATSUDO ,  Chishio Koshimizu ,  Jun Abe

Inventor： Tatsuo MATSUDO ,  Chishio Koshimizu ,  Jun Abe

IPC: C23F1/08 ,  G01J5/08 ,  G01K1/00 ,  C23C16/00

CPC classification number: H01L21/67248 ,  G01J5/0003 ,  G01J5/0007 ,  G01J5/041 ,  G01J5/045 ,  G01J5/048 ,  G01J5/08 ,  G01J5/0803 ,  G01J5/0806 ,  G01J5/0821 ,  G01J5/0846 ,  G01K11/00 ,  H01J2237/2001

Abstract: A plasma processing apparatus includes a temperature measuring unit; airtightly sealed temperature measuring windows provided in a mounting table, for optically communicating to transmit a measurement beam through a top surface and a bottom surface of the mounting table; and one or more connection members for connecting the mounting table and a base plate, which is provided in a space between the mounting table and the base plate. In the plasma processing apparatus, a space above the mounting table is set to be maintained under a vacuum atmosphere, and a space between the mounting table and the base plate is set to be maintained under a normal pressure atmosphere, and each collimator is fixed to the base plate at a position corresponding to each temperature measuring window, thereby measuring a temperature of the substrate via the temperature measuring windows by the temperature measuring unit.

Abstract translation: 一种等离子体处理装置，包括：温度测量单元; 设置在安装台上的气密密封温度测量窗，用于光学连通以将测量光束穿过安装台的顶表面和底表面传播; 以及用于连接安装台和设置在安装台和基板之间的空间中的基板的一个或多个连接构件。 在等离子体处理装置中，将安装台上方的空间设定为保持在真空气氛下，将安装台和基板之间的间隔设定为保持在常压气氛下，将每个准直器固定在 基板在与各温度测量窗对应的位置处，由温度测量单元通过温度测量窗测量基板的温度。

公开(公告)号：US20090293218A1

公开(公告)日：2009-12-03

申请号：US12223058

申请日：2007-01-26

Applicant: Masaru Fujiwara ,  Jun Abe ,  Ken Machida

Inventor： Masaru Fujiwara ,  Jun Abe ,  Ken Machida

IPC: B60S1/40

CPC classification number: B60S1/4009 ,  B60S1/4019 ,  B60S2001/4012

Abstract: A connection member that includes right and left side walls; a shaft support portion that is swingably fitted onto a support shaft that is provided at the blade main body; upper and lower pieces that are formed so as to be continuous from the shaft support portion; and projections that come into sliding contact with inner side surfaces at the opening are formed on outer side surfaces of the right and left side walls, wherein: the shaft support portion and the upper piece are integrally formed so as to bridge the right and left side walls, the lower piece is formed so as to be separated from the right and left side walls by a groove, and outward projection amounts of the projections are larger at the lower piece than at the upper piece.

Abstract translation: 包括右侧壁和左侧壁的连接构件; 轴支撑部，其可摆动地安装在设置在所述叶片主体上的支撑轴上; 形成为从轴支撑部连续的上下片; 并且在左右侧壁的外侧面形成有与开口部的内侧面滑动接触的突起，其中：轴支撑部和上部片整体形成为使左右侧 壁部分形成为通过凹槽与左右侧壁分离，并且突出部的向外突出量比下部件处于较大的部分。

公开(公告)号：US20090194508A1

公开(公告)日：2009-08-06

申请号：US12363070

申请日：2009-01-30

Applicant: Akio UI ,  Naoki TAMAOKI ,  Takashi ICHIKAWA ,  Hisataka HAYASHI ,  Takeshi KAMINATSUI ,  Shinji HIMORI ,  Norikazu YAMADA ,  Takeshi OHSE ,  Jun ABE

Inventor： Akio UI ,  Naoki TAMAOKI ,  Takashi ICHIKAWA ,  Hisataka HAYASHI ,  Takeshi KAMINATSUI ,  Shinji HIMORI ,  Norikazu YAMADA ,  Takeshi OHSE ,  Jun ABE

IPC: B44C1/22 ,  C23F1/08

CPC classification number: H01J37/32027 ,  H01J37/32045 ,  H01J37/32091

Abstract: A substrate plasma processing apparatus includes a substrate holding electrode and a counter electrode which are arranged in a chamber, a high frequency generating device which applies a high frequency of 50 MHZ or higher to the substrate holding electrode, a DC negative pulse generating device which applies a DC negative pulse voltage in a manner of superimposing on the high frequency, and a controller controlling to cause intermittent application of the high frequency and cause intermittent application of the DC negative pulse voltage according to the timing of on or off of the high frequency.

Abstract translation: 衬底等离子体处理装置包括布置在腔室中的衬底保持电极和对电极，向衬底保持电极施加50MHz以上的高频的高频发生装置，应用了DC负脉冲发生装置 以高频重叠的方式设置直流负脉冲电压，以及控制器，根据高频开启或关闭的定时控制高频频率的间歇施加，直流负脉冲电压的间歇施加。

公开(公告)号：US07276150B2

公开(公告)日：2007-10-02

申请号：US10275038

申请日：2001-11-16

Applicant: Shigeki Nagamatsu ,  Jun Abe ,  Akira Sugimoto ,  Makoto Inomata ,  Tetsuya Watanabe

Inventor： Shigeki Nagamatsu ,  Jun Abe ,  Akira Sugimoto ,  Makoto Inomata ,  Tetsuya Watanabe

IPC: C10L1/00 ,  C10G45/00

CPC classification number: C10G65/16 ,  B01J23/882 ,  C10G2300/1059 ,  C10G2300/202 ,  C10G2300/207 ,  C10G2400/06

Abstract: The process for desulfurizing a gas oil fraction according to the invention comprises a low-boiling gas oil fraction hydrodesulfurization step (I) wherein a low-boiling gas oil fraction is desulsurized under the condition of a H2/Oil ratio of 70 to 200 Nm3/kl to obtain a treated oil, a high-boiling gas oil fraction hydrodesulfurization step (II) wherein a high-boiling gas oil fraction is desulsurized under the condition of a H2Oil ratio of 200 to 800 Nm3/kl to obtain a treated oil, and a step (III) wherein the treated oil obtained in the step (I) is mixed with the treated oil obtained in the step (II), and in this process, at least a part of a gas containing unreacted hydrogen in the step (II) is used for the hydrodesulfurization of the step (I).

Abstract translation: 根据本发明的粗柴油馏分的脱硫方法包括低沸点瓦斯油馏分加氢脱硫步骤（I），其中低沸点瓦斯油馏分在H 2 N 2 / 油比为70〜200Nm 3 / kl，得到处理油，高沸点瓦斯油馏分加氢脱硫工序（II），其中高沸点瓦斯油馏分在条件下脱硫 H 2油比为200〜800Nm 3 / kl，得到处理油，和步骤（III），其中步骤（I）中得到的处理油为 与步骤（II）中获得的处理油混合，并且在该方法中，将步骤（II）中的至少一部分含有未反应的氢的气体用于步骤（I）的加氢脱硫。

公开(公告)号：US06301412B1

公开(公告)日：2001-10-09

申请号：US09106019

申请日：1998-06-29

Applicant: Tsuneo Mori ,  Masaaki Shirota ,  Seiki Ejima ,  Jun Abe ,  Sayuri Maeda ,  Kazuo Koya

Inventor： Tsuneo Mori ,  Masaaki Shirota ,  Seiki Ejima ,  Jun Abe ,  Sayuri Maeda ,  Kazuo Koya

IPC: G02B626

CPC classification number: G02B6/2856

Abstract: A mask having a center hole for passing through a center fiber, which is one of multiple fibers, and multiple surrounding holes for passing through surrounding fibers, which are the remainder of the multiple fibers, and a stress adjusting unit for holding stresses generated in the center fiber and surrounding fibers to a desired constant value, respectively, are installed. The surrounding fibers are rotated around the center fiber by rotating the mask. The center fiber and the surrounding fibers that have been twisted around the center fiber are heated with a heating apparatus and drawn. The center fiber and the surrounding fibers are fixed using a clamp installed between the stress adjusting unit and the heating apparatus.

Abstract translation: 具有用于穿过作为多根纤维之一的中心纤维的中心孔的掩模和用于穿过作为多纤维的其余部分的周围纤维的多个环绕孔以及用于保持在所述多个纤维中产生的应力的应力调节单元 中心纤维和周围纤维分别安装到所需的恒定值。 通过旋转掩模使周围的纤维围绕中心纤维旋转。 围绕中心纤维扭转的中心纤维和周围的纤维用加热装置加热并拉伸。 中心纤维和周围的纤维使用安装在应力调节单元和加热装置之间的夹具来固定。