公开(公告)号：US20050247968A1

公开(公告)日：2005-11-10

申请号：US11168126

申请日：2005-06-28

Applicant: Byung-jun Oh ,  Kyung-tae Lee ,  Mu-kyeng Jung

Inventor： Byung-jun Oh ,  Kyung-tae Lee ,  Mu-kyeng Jung

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/822 ,  H01L23/52 ,  H01L23/522 ,  H01L27/00 ,  H01L27/04 ,  H01L27/06 ,  H01L27/08 ,  H01L27/108

CPC classification number: H01L21/76801 ,  H01L21/76838 ,  H01L21/76895 ,  H01L23/5223 ,  H01L27/0688 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Integrated circuit devices include an integrated circuit substrate and a conductive lower electrode layer of a capacitor on the integrated circuit substrate. A dielectric layer is on the lower electrode layer and a conductive upper electrode layer of the capacitor is on the dielectric layer. A first intermetal dielectric layer is on the upper electrode layer. The first intermetal dielectric layer includes at least one via hole extending to the upper electrode layer. A first conductive interconnection layer is on the at least one via hole of the first intermetal dielectric layer. A second intermetal dielectric layer is on the first intermetal dielectric layer. The second intermetal dielectric layer includes at least one via hole extending to the first conductive interconnection layer and at least partially exposing the at least one via hole of the first intermetal dielectric layer. A second conductive interconnection layer is provided in the at least one via hole of the second intermetal dielectric layer that electrically contacts the first conductive interconnection layer.

Abstract translation: 集成电路器件包括集成电路衬底和集成电路衬底上的电容器的导电下电极层。 介电层位于下电极层上，电容器的导电上电极层位于电介质层上。 第一金属间电介质层在上电极层上。 第一金属间电介质层包括延伸到上电极层的至少一个通孔。 第一导电互连层位于第一金属间电介质层的至少一个通孔上。 第二金属间介电层位于第一金属间电介质层上。 第二金属间电介质层包括延伸到第一导电互连层并且至少部分暴露第一金属间介电层的至少一个通孔的至少一个通孔。 第二导电互连层设置在与第一导电互连层电接触的第二金属间电介质层的至少一个通孔中。

公开(公告)号：US06940114B2

公开(公告)日：2005-09-06

申请号：US10657490

申请日：2003-09-08

Applicant: Byung-jun Oh ,  Kyung-tae Lee ,  Mu-kyeng Jung

Inventor： Byung-jun Oh ,  Kyung-tae Lee ,  Mu-kyeng Jung

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/822 ,  H01L23/52 ,  H01L23/522 ,  H01L27/00 ,  H01L27/04 ,  H01L27/06 ,  H01L27/08 ,  H01L27/108

CPC classification number: H01L21/76801 ,  H01L21/76838 ,  H01L21/76895 ,  H01L23/5223 ,  H01L27/0688 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Integrated circuit devices include an integrated circuit substrate and a conductive lower electrode layer of a Metal-Insulator-Metal (MIM) capacitor on the integrated circuit substrate. A dielectric layer is on the lower electrode layer and a conductive upper electrode layer of the MIM capacitor is on the dielectric layer. A first intermetal dielectric layer is on the upper electrode layer. The first intermetal dielectric layer includes at least one via hole extending to the upper electrode layer. A first conductive interconnection layer is on the at least one via hole of the first intermetal dielectric layer. A second intermetal dielectric layer is on the first intermetal dielectric layer. The second intermetal dielectric layer includes at least one via hole extending to the first conductive interconnection layer and at least partially exposing the at least one via hole of the first intermetal dielectric layer. A second conductive interconnection layer is provided in the at least one via hole of the second intermetal dielectric layer that electrically contacts the first conductive interconnection layer.

Abstract translation: 集成电路器件包括在集成电路衬底上的集成电路衬底和金属 - 绝缘体 - 金属（MIM）电容器的导电下电极层。 电介质层位于下电极层上，MIM电容器的导电上电极层位于电介质层上。 第一金属间电介质层在上电极层上。 第一金属间电介质层包括延伸到上电极层的至少一个通孔。 第一导电互连层位于第一金属间电介质层的至少一个通孔上。 第二金属间电介质层位于第一金属间电介质层上。 第二金属间电介质层包括延伸到第一导电互连层并且至少部分暴露第一金属间介电层的至少一个通孔的至少一个通孔。 第二导电互连层设置在与第一导电互连层电接触的第二金属间电介质层的至少一个通孔中。

公开(公告)号：US20050026422A1

公开(公告)日：2005-02-03

申请号：US10899934

申请日：2004-07-27

Applicant: Yoon-Hae Kim ,  Kyung-Tae Lee ,  Yong-Jun Lee

Inventor： Yoon-Hae Kim ,  Kyung-Tae Lee ,  Yong-Jun Lee

IPC: H01L21/28 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L21/336 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L21/02126 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02362 ,  H01L21/3122 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832

Abstract: In a method of forming an insulating structure, an insulating interlayer is formed on a substrate using a silicon source gas and a reaction gas. A capping layer is formed in-situ on the insulating interlayer by increasing a flow rate of an oxidizing gas included in the reaction gas so that the capping layer has a second thickness when the insulating interlayer is formed on the substrate to have a first thickness. The insulating structure dose not have an interface between the insulating interlayer and the capping layer so that the insulating interlayer is not subject to damage by a cleaning solution during a subsequent cleaning process, since the cleaning solution maynot permeate into the insulating structure. Additionally, leakage current is mitigated or eliminated between the insulating interlayer and the capping layer, thereby improving the reliability of a semiconductor device including the insulating structure.

Abstract translation: 在形成绝缘结构的方法中，使用硅源气体和反应气体在基板上形成绝缘中间层。 通过增加反应气体中包含的氧化气体的流量，在绝缘中间层上原位形成覆盖层，使得当在基板上形成绝缘中间层以具有第一厚度时，覆盖层具有第二厚度。 绝缘结构在绝缘中间层和覆盖层之间不具有界面，使得在随后的清洁过程中绝缘中间层不被清洁溶液损坏，因为清洁溶液可能不渗透到绝缘结构中。 此外，在绝缘中间层和覆盖层之间减轻或消除泄漏电流，从而提高包括绝缘结构的半导体器件的可靠性。

公开(公告)号：US20050024979A1

公开(公告)日：2005-02-03

申请号：US10901239

申请日：2004-07-29

Applicant: Yoon-hae Kim ,  Kyung-tae Lee ,  Seong-ho Liu

Inventor： Yoon-hae Kim ,  Kyung-tae Lee ,  Seong-ho Liu

IPC: H01L21/768 ,  G11C8/02 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/04

CPC classification number: H01L28/40 ,  H01L28/75

Abstract: A method of manufacturing a MIM capacitor and a interconnecting structure using a damascene process. The MIM capacitor and the first interconnecting structure can be formed at equal depths.

Abstract translation: 使用镶嵌工艺制造MIM电容器和互连结构的方法。 MIM电容器和第一互连结构可以以相等的深度形成。

公开(公告)号：US6089852A

公开(公告)日：2000-07-18

申请号：US64108

申请日：1998-04-22

Applicant: Kyung-Tae Lee ,  Vincent Travaglini ,  Joseph Robert Klanfar

Inventor： Kyung-Tae Lee ,  Vincent Travaglini ,  Joseph Robert Klanfar

IPC: B29C45/32 ,  B29C45/66

CPC classification number: B29C45/32

Abstract: A centering arrangement for controlling relative movement between a series of mold support plates in a stack mold having three or more levels. The centering arrangement uses a plurality of centering devices which are substantially identical, each spanning two mold levels and being connected to three adjacent mold support plates. Each centering device has a shaft generally parallel to an axis of the mold and having an intermediate portion journalled in an intermediate connector to allow rotational movement about a shaft axis, but to restrain relative axial movement between the shaft and the intermediate connector. Helical splines extend from the intermediate portion toward opposite ends of the shaft in oppositely twisting helices. End connectors having cooperating splines engage the splined portions of the shaft and connect the centering device to the outermost of the mold plates to which it is connected. The intermediate connector secures the centering device to the intermediate of the three mold plates to which the centering device is connected. Relative axial movement between the end connectors and the adjacent intermediate connector requires simultaneous translation and rotation of the shaft in equal amounts in both end connectors, thereby maintaining the intermediate connector centered between the two adjacent end connectors.

Abstract translation: 一种对中装置，用于控制具有三个或更多个水平的堆叠模具中的一系列模具支撑板之间的相对运动。 定心装置使用大致相同的多个定心装置，每个定中心装置跨越两个模具层并连接到三个相邻的模具支撑板。 每个定心装置具有大体上平行于模具的轴线的轴，并且具有中间部分，其中间部分轴颈连接在中间连接器中，以允许围绕轴线的旋转运动，但是限制轴和中间连接器之间的相对轴向运动。 螺旋花键在相反的扭转螺旋处从中间部分延伸到轴的相对端。 具有配合的花键的端部连接件接合轴的花键部分并将定心装置连接到与其连接的模具板的最外侧。 中间连接器将定心装置固定到与定心装置连接的三个模板的中间。 端部连接器和相邻的中间连接器之间的相对轴向运动需要在两个端部连接器中同时平移和等轴旋转轴，从而将中间连接器保持在两个相邻的端部连接器之间。

公开(公告)号：US20090211638A1

公开(公告)日：2009-08-27

申请号：US12393055

申请日：2009-02-26

Applicant: Nam-Gyu PARK ,  Kyung-Kon KIM ,  Kyung-Tae LEE

Inventor： Nam-Gyu PARK ,  Kyung-Kon KIM ,  Kyung-Tae LEE

IPC: H01L31/00 ,  H01L31/0352

CPC classification number: H01G9/2072 ,  H01G9/2031 ,  H01G9/2059 ,  H01G9/2063 ,  Y02E10/542

Abstract: Provided are a dye-sensitized solar cell and a method for preparing the same. A dye-sensitized solar cell may include a photoelectrode comprising at least two kinds of dye layers having different wavelengths on a transparent conductive substrate, and a counter electrode comprising a platinum (Pt) layer on a transparent conductive substrate. The counter electrode may be arranged opposite to the photoelectrode and an electrolyte may be filled between the photoelectrode and the counter electrode.

Abstract translation: 提供染料敏化太阳能电池及其制备方法。 染料敏化太阳能电池可以包括在透明导电基板上包括至少两种具有不同波长的染料层的光电极和在透明导电基板上包含铂（Pt）层的对电极。 对电极可以布置成与光电极相对，并且可以在光电极和对电极之间填充电解质。

公开(公告)号：US07560332B2

公开(公告)日：2009-07-14

申请号：US11733711

申请日：2007-04-10

Applicant: Kyoung-Woo Lee ,  Wan-Jae Park ,  Jeong-Hoon Ahn ,  Kyung-Tae Lee ,  Mu-Kyeng Jung ,  Yong-Jun Lee ,  Il-Goo Kim ,  Soo-Geun Lee

Inventor： Kyoung-Woo Lee ,  Wan-Jae Park ,  Jeong-Hoon Ahn ,  Kyung-Tae Lee ,  Mu-Kyeng Jung ,  Yong-Jun Lee ,  Il-Goo Kim ,  Soo-Geun Lee

IPC: H01L21/8234

CPC classification number: H01L28/40 ,  H01L23/5222 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the invention include a MIM capacitor that has a high capacitance that can be manufactured without the problems that affected the prior art. Such a capacitor includes an upper electrode, a lower electrode, and a dielectric layer that is intermediate the upper and the lower electrodes. A first voltage can be applied to the upper electrode and a second voltage, which is different from the first voltage, can be applied to the lower electrode. A wire layer, through which the first voltage is applied to the upper electrode, is located in the same level as or in a lower level than the lower electrode.

Abstract translation: 本发明的实施例包括具有高电容的MIM电容器，其可以在没有影响现有技术的问题的情况下被制造。 这种电容器包括上电极，下电极和位于上电极和下电极之间的电介质层。 可以将第一电压施加到上电极，并且可以将不同于第一电压的第二电压施加到下电极。 将第一电压施加到上电极的线层位于与下电极相同的水平或比下电极低的水平位置。

公开(公告)号：US20080198581A1

公开(公告)日：2008-08-21

申请号：US12033981

申请日：2008-02-20

Applicant: Hyung-Bong LEE ,  Dae-Gyu LEE ,  Kyung-Tae LEE

Inventor： Hyung-Bong LEE ,  Dae-Gyu LEE ,  Kyung-Tae LEE

IPC: B43K29/10

CPC classification number: B43K7/00 ,  B43K21/02 ,  B43K21/22 ,  B43K29/10

Abstract: Provided is a touch sensor type light-emission writing instrument such as a ball point pen or an automatic pencil, which includes an LED (Light-Emitting Diode) unit which is turned on or off by a touch sensor without special illumination at dark places or at night. The touch sensor type light-emission writing instrument includes an LED unit having two light-emission portions which are embedded in a leading-end opening portion of a body accommodating a pencil lead or a ball point internal chamber filled with viscous ink, and which emit light. The negative polarity of the LED unit is directly connected to a battery through a metal plate, a spring etc., in the writing instrument, and the positive polarity thereof is linked on an integrated-circuit (IC) board between the LED unit and the battery. The LED unit is turned on or off by detection of a touch sensor. Accordingly, in comparison with the conventional light-emission writing instrument employing the mechanical switching unit, the touch sensor type light-emission writing instrument employing the touch sensor type switching unit is simple in view of the structure, to thus decrease the number of trouble occurrence, and employs the LED unit having two light-emission portions, to thus provide good brightness so that shadow does not occur as well as to thus facilitate a switching operation of the LED unit, to offer a simply manipulative light-emission writing instrument.

Abstract translation: 提供了一种触摸传感器型发光书写工具，例如圆珠笔或自动铅笔，其包括LED（发光二极管）单元，其通过触摸传感器在黑暗处无特殊照明而被接通或关闭，或 在晚上。 触摸传感器型发光写入装置包括具有两个发光部分的LED单元，LED发光部分嵌入容纳铅笔线的主体的前端开口部分或填充有粘性墨水的圆珠笔内部，并且发射 光。 LED单元的负极性通过书写工具中的金属板，弹簧等直接连接到电池，并且其正极性连接在LED单元和LED单元之间的集成电路（IC）板上 电池。 通过检测到触摸传感器来打开或关闭LED单元。 因此，与使用机械切换单元的常规发光书写装置相比，使用触摸传感器型切换单元的触摸传感器型发光书写工具的结构简单，从而减少故障发生次数 并且采用具有两个发光部分的LED单元，从而提供良好的亮度，使得不会发生阴影，从而便于LED单元的开关操作，从而提供简单的操作性发光书写工具。

公开(公告)号：US07351653B2

公开(公告)日：2008-04-01

申请号：US11498888

申请日：2006-08-03

Applicant: Jeong-Hoon Ahn ,  Kyung-Tae Lee ,  Yoon-Hae Kim

Inventor： Jeong-Hoon Ahn ,  Kyung-Tae Lee ,  Yoon-Hae Kim

IPC: H01L21/4763

CPC classification number: H01L21/76822 ,  H01L21/7684

Abstract: Disclosed are methods for carrying out a damascene process in semiconductor fabrication including the steps of: forming an intermetal dielectric film on a semiconductor substrate; patterning the intermetal dielectric film and forming an intermetal dielectric pattern comprising at least two layers of different chemical compositions that includes at least an opening penetrating the intermetal dielectric film; forming a conductive film to fill the opening on the intermetal dielectric pattern; and etching the conductive film by means of a chemical/mechanical polishing operation until exposing an upper face of the intermetal dielectric pattern and the top of the filled opening so as to form a conductive pattern. An etching process is then performed to selectively remove an upper portion of the intermetal dielectric pattern. Because the intermetal dielectric film is variable in chemical composition according to different constituent layers, the upper portion of the intermetal dielectric pattern can be selectively removed by using a chemical etching composition that demonstrates etching selectivity relative to the different layers of the intermetal dielectric film.

Abstract translation: 公开了用于在半导体制造中执行镶嵌工艺的方法，包括以下步骤：在半导体衬底上形成金属间电介质膜; 图案化金属间电介质膜并形成包括至少两层不同化学组成的金属间电介质图案，其包括至少穿过金属间电介质膜的开口; 形成导电膜以填充金属间电介质图案上的开口; 并通过化学/机械抛光操作蚀刻导电膜，直到暴露金属间电介质图案的上表面和填充开口的顶部，以形成导电图案。 然后执行蚀刻处理以选择性地去除金属间电介质图案的上部。 由于金属间电介质膜根据不同的构成层的化学组成是可变的，所以可以通过使用相对于金属间电介质膜的不同层表现出蚀刻选择性的化学蚀刻组合物来选择性地去除金属间电介质图案的上部。

公开(公告)号：US20070275111A1

公开(公告)日：2007-11-29

申请号：US11695409

申请日：2007-04-02

Applicant: Mihai Berceanu ,  Jeffrey Ngai ,  Filippo Martino ,  Vincent Travaglini ,  Kyung-Tae Lee ,  Gary Fong

Inventor： Mihai Berceanu ,  Jeffrey Ngai ,  Filippo Martino ,  Vincent Travaglini ,  Kyung-Tae Lee ,  Gary Fong

IPC: B28B7/42

CPC classification number: B29C45/2606 ,  B29C45/32 ,  B29C45/73

Abstract: A cooling arrangement is provided for a mold centering device for multi-level stack molds having a spline shaft with a central region journaled to an intermediate mold level with involute spline pathways extending in oppositely twisting helices from the central region toward opposite ends thereof and respective spline nuts secured to adjacent mold levels threadedly engaging the spline pathways to run therealong for converting linear motion into rotational motion and vice versa thereby controlling relative opening and closing rates of the adjacent mold levels relative to the intermediate mold levels therebetween. The cooling arrangement has an internal fluid passageway extending along the spline shaft into a region of the spline shaft received in the spline nuts. A fluid inlet communicates with and supplies fluid to the fluid passageway. A fluid outlet communicates with and discharges fluid from the fluid passageway. Fluid guide means are provided for causing a fluid to flow along the fluid passageway to cool the region received in the spline nuts as the fluid passes from the inlet through the outlet.

Abstract translation: 提供了一种用于多级堆叠模具的模具定心装置的冷却装置，其具有花键轴，所述花键轴具有轴颈到中间模具级的中心区域，其具有从中心区域朝向其相对端延伸的相反扭转螺旋的渐开线花键路径和相应的花键 螺母固定到相邻模具水平面上，螺纹地接合花键通道以沿着其运行以将线性运动转换成旋转运动，反之亦然，从而控制相邻模具水平相对于它们之间的中间模具水平的相对开启和关闭速度。 冷却装置具有沿着花键轴延伸到花键螺母中的花键轴的区域中的内部流体通道。 流体入口与流体通道连通并供应流体。 流体出口与流体通道连通并排出流体。 流体引导装置用于使流体沿着流体通道流动，以在流体从入口通过出口通过时冷却容纳在花键螺母中的区域。