Thin film transistor and manufacturing method thereof
    31.
    发明授权
    Thin film transistor and manufacturing method thereof 有权
    薄膜晶体管及其制造方法

    公开(公告)号:US08344384B2

    公开(公告)日:2013-01-01

    申请号:US13024978

    申请日:2011-02-10

    Abstract: Disclosed are a thin film transistor and a method of manufacturing the thin film transistor. An electrode layer of the thin film transistor includes a seed layer formed of a transparent conductive material doped with indium gallium zinc oxide (IGZO) and a main layer formed of a transparent conductive material. The thin film transistor includes a substrate, a gate electrode on the substrate, a gate insulation film on the substrate to cover the gate electrode, a semiconductor layer disposed on the gate insulation film in a region corresponding to the gate electrode, an electrode layer having a double layer structure and disposed on the gate insulation film in a manner such that a topside portion of the semiconductor layer is exposed through the electrode layer, and a passivation layer on the gate insulation film to cover the semiconductor layer and the electrode layer.

    Abstract translation: 公开了薄膜晶体管和制造薄膜晶体管的方法。 薄膜晶体管的电极层包括由掺杂有铟镓锌氧化物(IGZO)的透明导电材料和由透明导电材料形成的主层形成的晶种层。 所述薄膜晶体管包括基板,所述基板上的栅极电极,所述基板上的覆盖所述栅电极的栅极绝缘膜,在与所述栅电极对应的区域中的所述栅极绝缘膜上设置的半导体层,具有 双层结构,并且以使得半导体层的顶侧部分通过电极层露出的方式设置在栅极绝缘膜上,以及在栅极绝缘膜上覆盖半导体层和电极层的钝化层。

    METHOD FOR FABRICATING FLEXIBLE ELECTRONIC DEVICE AND ELECTRONIC DEVICE FABRICATED THEREBY
    33.
    发明申请
    METHOD FOR FABRICATING FLEXIBLE ELECTRONIC DEVICE AND ELECTRONIC DEVICE FABRICATED THEREBY 审中-公开
    制造柔性电子器件的方法及其制造的电子器件

    公开(公告)号:US20120115259A1

    公开(公告)日:2012-05-10

    申请号:US13292772

    申请日:2011-11-09

    CPC classification number: H01M10/052 H01M10/058

    Abstract: Disclosed are a method for fabricating a flexible electronic device using laser lift-off and an electronic device fabricated thereby. More particularly, disclosed are a method for fabricating a flexible electronic device using laser lift-off allowing for fabrication of a flexible electronic device in an economical and stable way by separating a device such as a secondary battery fabricated on a sacrificial substrate using laser, and an electronic device fabricated thereby.

    Abstract translation: 公开了一种使用激光剥离制造柔性电子装置的方法和由此制造的电子装置。 更具体地,公开了一种使用激光剥离制造柔性电子器件的方法,其通过使用激光器分离诸如在牺牲基板上制造的二次电池的器件,以经济和稳定的方式制造柔性电子器件,以及 由此制造的电子设备。

    APPARATUS AND METHOD OF DEPTH CODING USING PREDICTION MODE
    34.
    发明申请
    APPARATUS AND METHOD OF DEPTH CODING USING PREDICTION MODE 审中-公开
    使用预测模式深度编码的方法和方法

    公开(公告)号:US20110317766A1

    公开(公告)日:2011-12-29

    申请号:US13159943

    申请日:2011-06-14

    CPC classification number: H04N19/20 H04N19/105 H04N19/137 H04N19/17 H04N19/597

    Abstract: A depth image coding method may calculate a depth offset of a depth image, may generate a prediction mode based on the depth offset, may minimize a prediction error of the depth image having a low correlation between adjacent points of view and a low temporal correlation and may enhance a compression rate. The depth offset may be calculated based on a representative value of adjacent pixels included in a template as opposed to using a depth representative value of pixels in a block and header information may not be needed to encode an offset and the offset may be generated by a depth image decoding apparatus. When a plurality of objects is included in a block, a depth offset is calculated for each of the plurality of objects and a motion vector is calculated for each of the plurality of objects and the depth image may be accurately predicted.

    Abstract translation: 深度图像编码方法可以计算深度图像的深度偏移,可以基于深度偏移生成预测模式,可以使相邻观察点与低时间相关性之间的相关性低的深度图像的预测误差最小化;以及 可以提高压缩率。 可以基于包括在模板中的相邻像素的代表值来计算深度偏移,而不是使用块中的像素的深度代表值,并且可能不需要标题信息来编码偏移,并且偏移可以由 深度图像解码装置。 当多个对象被包括在块中时,针对多个对象中的每一个计算深度偏移量,并且针对多个对象中的每个对象计算运动矢量,并且可以准确地预测深度图像。

    THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THIN FILM TRANSISTOR
    35.
    发明申请
    THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THIN FILM TRANSISTOR 有权
    薄膜晶体管和制造薄膜晶体管的方法

    公开(公告)号:US20110198592A1

    公开(公告)日:2011-08-18

    申请号:US12794062

    申请日:2010-06-04

    CPC classification number: H01L29/78627 H01L29/42384 H01L29/66757 Y10S977/70

    Abstract: Disclosed are a thin film transistor having high reliability and providing a simplified fabricating process, and a method of fabricating the thin film transistor. In the method, a dielectric substrate is prepared, a semiconductor layer is formed on the dielectric substrate, a gate dielectric film is formed on the semiconductor layer, a first gate electrode is formed on the gate dielectric film, a second gate electrode contacting a side wall of the first gate electrode is formed, and impurities are implanted into the semiconductor layer using the first gate electrode as a mask.

    Abstract translation: 公开了具有高可靠性并提供简化的制造工艺的薄膜晶体管,以及制造薄膜晶体管的方法。 在该方法中,制备电介质基板,在电介质基板上形成半导体层,在半导体层上形成栅极绝缘膜,在栅极电介质膜上形成第一栅电极, 形成第一栅电极的壁,并且使用第一栅电极作为掩模将杂质注入到半导体层中。

    Illumination sensing apparatus, driving method thereof and display device having the illumination sensing apparatus
    36.
    发明授权
    Illumination sensing apparatus, driving method thereof and display device having the illumination sensing apparatus 有权
    照明感测装置及其驱动方法以及具有照明感测装置的显示装置

    公开(公告)号:US07868280B2

    公开(公告)日:2011-01-11

    申请号:US12179360

    申请日:2008-07-24

    Abstract: Provided are an illumination sensing apparatus, a driving method thereof and a display device having the illumination sensing apparatus. The illumination sensing apparatus includes an illumination sensor unit configured to generate a sensing signal according to peripheral illumination, an illumination determination unit configured to generate an illumination signal according to the sensing signal, and an illumination judgment unit configured to output a brightness select signal using the illumination signal, wherein the illumination sensor unit controls sensitivity of sensing the peripheral illumination to be varied according to the brightness select signal. Therefore, the sensitivity of an illumination sensor is automatically controlled according to the peripheral illumination, thus improving peripheral illumination sensibility. Further, an illumination signal corresponding to the peripheral illumination is provided to a light source module to thereby control the output brightness of the light source module, which makes it possible to reduce power consumption and improve image quality.

    Abstract translation: 提供了一种照明感测装置,其驱动方法和具有该照明感测装置的显示装置。 该照明感测装置具备:照明传感器单元,被配置为根据周边照明产生感测信号;照明判定​​单元,其根据感测信号生成照明信号;照明判断单元,其使用 照明信号,其中所述照明传感器单元控制根据所述亮度选择信号来感测要周边照明的灵敏度。 因此,根据周边照明自动控制照明传感器的灵敏度,从而提高周边照明灵敏度。 此外,将与周边照明相对应的照明信号提供给光源模块,从而控制光源模块的输出亮度,这使得可以降低功耗并提高图像质量。

    METHOD OF FORMING SEMICONDUCTOR DEVICE PATTERNS
    38.
    发明申请
    METHOD OF FORMING SEMICONDUCTOR DEVICE PATTERNS 有权
    形成半导体器件图案的方法

    公开(公告)号:US20100173492A1

    公开(公告)日:2010-07-08

    申请号:US12480807

    申请日:2009-06-09

    CPC classification number: H01L21/3086 H01L21/0337 H01L21/32139 H01L27/11521

    Abstract: Provided is a method of forming patterns of a semiconductor device, whereby patterns having various widths can be simultaneously formed, and pattern density can be doubled by a double patterning process in a portion of the semiconductor device. In the method of forming patterns of a semiconductor device, a first mold mask pattern and a second mold mask patter having different widths are formed on a substrate. A pair of first spacers covering both sidewalls of the first mold mask pattern and a pair of second spacers covering both sidewalls of the second mold mask pattern are formed. The first mold mask pattern and the second mold mask pattern are removed, and a wide-width mask pattern covering the second spacer is formed. A lower layer is etched using the first spacers, the second spacers, and the wide-width mask pattern as an etch mask.

    Abstract translation: 提供了一种形成半导体器件的图案的方法,由此可以同时形成具有各种宽度的图案,并且通过在半导体器件的一部分中的双重图案化工艺可以使图案密度加倍。 在形成半导体器件的图案的方法中,在衬底上形成具有不同宽度的第一模具掩模图案和第二模具掩模图案。 形成覆盖第一模具掩模图案的两个侧壁的一对第一间隔件和覆盖第二模具掩模图案的两个侧壁的一对第二间隔件。 去除第一模具掩模图案和第二模具掩模图案,并且形成覆盖第二间隔件的宽幅掩模图案。 使用第一间隔物,第二间隔物和宽幅掩模图案作为蚀刻掩模蚀刻下层。

    TOUCH SENSOR AND LIQUID CRYSTAL DISPLAY HAVING THE SAME
    40.
    发明申请
    TOUCH SENSOR AND LIQUID CRYSTAL DISPLAY HAVING THE SAME 有权
    触摸传感器和液晶显示器

    公开(公告)号:US20100013788A1

    公开(公告)日:2010-01-21

    申请号:US12327378

    申请日:2008-12-03

    CPC classification number: G06F3/0412 G06F3/044

    Abstract: A touch sensor configured to be disposed in a liquid crystal display panel includes a plurality of x-axis read-out lines crossing and insulated from a plurality of y-axis read-out lines and a plurality of sensor units. Each sensor unit includes a reset unit, a capacitance detector, a first output unit, and a second output unit. The reset unit outputs a first reset signal based on a first control signal. The capacitance detector changes the first reset signal based on a variation of a cell gap of the liquid crystal display panel caused by a touch event. The first output unit changes an electric potential of a corresponding x-axis read-out line in response to the first reset signal changed in the capacitance detector. The second output unit changes an electric potential of a corresponding y-axis read-out line in response to the first reset signal changed in the capacitance detector.

    Abstract translation: 配置为设置在液晶显示面板中的触摸传感器包括与多个y轴读出线和多个传感器单元交叉并绝缘的多个x轴读出线。 每个传感器单元包括复位单元,电容检测器,第一输出单元和第二输出单元。 复位单元基于第一控制信号输出第一复位信号。 电容检测器基于由触摸事件引起的液晶显示面板的单元间隙的变化而改变第一复位信号。 响应于在电容检测器中改变的第一复位信号,第一输出单元改变对应的x轴读出线的电位。 响应于在电容检测器中改变的第一复位信号,第二输出单元改变对应的y轴读出线的电位。

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