公开(公告)号：US10859519B2

公开(公告)日：2020-12-08

申请号：US16686953

申请日：2019-11-18

Applicant: NOVA MEASURING INSTRUMENTS, INC.

Inventor： Heath A. Pois ,  David A. Reed ,  Bruno W. Schueler ,  Rodney Smedt ,  Jeffrey T. Fanton

IPC: G01N23/201 ,  G01N23/207 ,  H01L21/66

Abstract: Methods and systems for measuring periodic structures using multi-angle X-ray reflectance scatterometry (XRS) are disclosed. For example, a method of measuring a sample by X-ray reflectance scatterometry involves impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles. The method also involves collecting at least a portion of the scattered X-ray beam.

公开(公告)号：US20200370885A1

公开(公告)日：2020-11-26

申请号：US16872568

申请日：2020-05-12

Applicant: NOVA MEASURING INSTRUMENTS, INC.

Inventor： Heath A. Pois ,  Wei Ti Lee ,  Lawrence V. Bot ,  Michael C. Kwan ,  Mark Klare ,  Charles Thomas Larson

IPC: G01B15/02 ,  G01N23/2251 ,  G01N23/225 ,  G01N23/223 ,  G01N23/2273

Abstract: Methods and systems for feed-forward of multi-layer and multi-process information using XPS and XRF technologies are disclosed. In an example, a method of thin film characterization includes measuring first XPS and XRF intensity signals for a sample having a first layer above a substrate. The first XPS and XRF intensity signals include information for the first layer and for the substrate. The method also involves determining a thickness of the first layer based on the first XPS and XRF intensity signals. The method also involves combining the information for the first layer and for the substrate to estimate an effective substrate. The method also involves measuring second XPS and XRF intensity signals for a sample having a second layer above the first layer above the substrate. The second XPS and XRF intensity signals include information for the second layer, for the first layer and for the substrate. The method also involves determining a thickness of the second layer based on the second XPS and XRF intensity signals, the thickness accounting for the effective substrate.

公开(公告)号：US20180330935A1

公开(公告)日：2018-11-15

申请号：US16039292

申请日：2018-07-18

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： David A. REED ,  Bruno W. Schueler ,  Bruce H. Newcome ,  Rodney Smedt ,  Chris Bevis

IPC: H01J49/14 ,  H01J49/26 ,  G01N23/22 ,  G01Q10/04 ,  H01L21/66

CPC classification number: H01J49/142 ,  G01N23/22 ,  G01Q10/04 ,  H01J49/26 ,  H01L22/12

Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass, spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).

公开(公告)号：US10056242B2

公开(公告)日：2018-08-21

申请号：US15550014

申请日：2016-02-10

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： David A. Reed ,  Bruno W. Schueler ,  Bruce H. Newcome ,  Rodney Smedt ,  Chris Bevis

IPC: H01J49/14 ,  H01L21/66 ,  G01Q10/04 ,  G01N23/22 ,  H01J49/26

CPC classification number: H01J49/142 ,  G01N23/22 ,  G01Q10/04 ,  H01J49/26 ,  H01L22/12

Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).

公开(公告)号：US20250006451A1

公开(公告)日：2025-01-02

申请号：US18675096

申请日：2024-05-27

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： David A. REED ,  Bruce H. NEWCOME ,  Bruno W. SCHUELER

IPC: H01J35/08 ,  G01N23/20008 ,  G01N23/207 ,  G01N23/2208 ,  G01N23/223 ,  H01J35/24

Abstract: The present invention is intended to provide improved patterned X-ray emitting targets as well as X-ray sources that include patterned X-ray emitting targets as well as X-ray reflectance scatterometry (XRS) systems and also including X-ray photoelectron spectroscopy (XPS) systems and X-ray fluorescence (XRF) systems which employ such X-ray emitting targets.

公开(公告)号：US12158437B2

公开(公告)日：2024-12-03

申请号：US18337397

申请日：2023-06-19

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： Charles Larson ,  Kavita Shah ,  Wei T Lee

IPC: G01N23/2273 ,  C23C16/06 ,  C23C16/24 ,  C23C16/455 ,  C23C16/52 ,  H01L21/67

Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.

公开(公告)号：US20240345006A1

公开(公告)日：2024-10-17

申请号：US18412817

申请日：2024-01-15

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： Heath POIS ,  David A. REED ,  Bruno W. SCHUELER ,  Rodney SMEDT ,  Jeffrey FANTON

IPC: G01N23/201 ,  G01N23/207 ,  H01L21/66

CPC classification number: G01N23/201 ,  G01N23/207 ,  G01N2223/054 ,  H01L22/12

Abstract: A system and method for measuring a sample by X-ray reflectance scatterometry. The method may include impinging an incident X-ray beam on a sample having a periodic structure to generate a scattered X-ray beam, the incident X-ray beam simultaneously providing a plurality of incident angles and a plurality of azimuthal angles; and collecting at least a portion of the scattered X-ray beam.

公开(公告)号：US20240044825A1

公开(公告)日：2024-02-08

申请号：US18337397

申请日：2023-06-19

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： Charles LARSON ,  Kavita SHAH ,  Wei T. LEE

IPC: G01N23/2273 ,  H01L21/67 ,  C23C16/52 ,  C23C16/24 ,  C23C16/455 ,  C23C16/06

CPC classification number: G01N23/2273 ,  H01L21/67253 ,  C23C16/52 ,  C23C16/24 ,  C23C16/45529 ,  C23C16/06

Abstract: XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.

公开(公告)号：US11852467B2

公开(公告)日：2023-12-26

申请号：US17438845

申请日：2020-03-12

Applicant: NOVA MEASURING INSTRUMENTS, INC.

Inventor： Heath A. Pois ,  Laxmi Warad ,  Srinivasan Rangarajan

IPC: G01B15/02 ,  G01N23/2273

CPC classification number: G01B15/02 ,  G01N23/2273 ,  G01N2223/61

Abstract: Quantification of the passivation and the selectivity in deposition process is disclosed. The passivation is evaluated by calculating film thicknesses on pattern lines and spaces. An XPS signal is used, which is normalized with X-ray flux number. The method is efficient for calculating thickness in selective deposition process, wherein the thickness can be used as metric to measure selectivity. Measured photoelectrons for each of the materials can be expressed as a function of the thickness of the material overlaying it, adjusted by material constant and effective attenuation length. In selective deposition over a patterned wafer, the three expressions can be solved to determine the thickness of the intended deposition and the thickness of any unintended deposition over passivated pattern.

公开(公告)号：US20230288196A1

公开(公告)日：2023-09-14

申请号：US18033324

申请日：2022-10-24

Applicant: NOVA MEASURING INSTRUMENTS INC.

Inventor： Heath POIS ,  Wei Ti LEE ,  Laxmi WARAD ,  Dmitry Kislitsyn ,  Parker Lund ,  Benny Tseng ,  James CHEN ,  Saurabh Singh

IPC: G01B15/02 ,  G01N23/2273

CPC classification number: G01B15/02 ,  G01N23/2273 ,  G01B2210/56 ,  G01N2223/6116 ,  G01N2223/645 ,  H01L22/12

Abstract: A system to characterize a film layer within a measurement box is disclosed. The system obtains a first mixing fraction corresponding to a first X-ray beam, the mixing fraction represents a fraction of the first X-ray beam inside a measurement box of a wafer sample, the measurement box represents a bore structure disposed over a substrate and having a film layer disposed inside the bore structure. The system obtains a contribution value for the measurement box corresponding to the first X-ray beam, the contribution value representing a species signal outside the measurement box that contributes to a same species signal inside the measurement box. The system obtains a first measurement detection signal corresponding to a measurement of the measurement box using the first X-ray beam. The system determines a measurement value of the film layer based on the first measurement detection signal, the contribution value, and the first mixing fraction.