公开(公告)号：US08853711B2

公开(公告)日：2014-10-07

申请号：US13037937

申请日：2011-03-01

申请人： Akira Fujimoto ,  Koji Asakawa ,  Ryota Kitagawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Eishi Tsutsumi ,  Masaaki Ogawa

发明人： Akira Fujimoto ,  Koji Asakawa ,  Ryota Kitagawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Eishi Tsutsumi ,  Masaaki Ogawa

IPC分类号： H01L33/00 ,  H01L33/38 ,  B82Y20/00 ,  H01L33/42

CPC分类号： H01L33/38 ,  B82Y20/00 ,  H01L33/42 ,  H01L2933/0016

摘要： A semiconductor light emitting device includes a structural body, a first electrode layer, an intermediate layer and a second electrode layer. The structural body includes a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer; the first electrode layer includes a metal portion and plural opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer, having an equivalent circular diameter not less than 10 nanometers and not more than 5 micrometers. The intermediate layer is between the first and second semiconductor layers in ohmic contact with the second semiconductor layer. The second electrode layer is electrically connected to the first semiconductor layer.

摘要翻译： 半导体发光器件包括结构体，第一电极层，中间层和第二电极层。 结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层以及第一和第二半导体层之间的发光层。 第一电极层位于与第一半导体层相对的第二半导体层的一侧上; 第一电极层包括金属部分和沿着从第一半导体层朝向第二半导体层的方向刺穿金属部分的多个开口部分，具有不小于10纳米且不大于5微米的等效圆直径。 中间层位于与第二半导体层欧姆接触的第一和第二半导体层之间。 第二电极层电连接到第一半导体层。

公开(公告)号：US08835954B2

公开(公告)日：2014-09-16

申请号：US13221326

申请日：2011-08-30

申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Kumi Masunaga ,  Kenji Nakamura ,  Tsutomu Nakanishi ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Kumi Masunaga ,  Kenji Nakamura ,  Tsutomu Nakanishi ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

IPC分类号： H01L33/60 ,  H01L33/40 ,  H01L33/38 ,  H01L33/00

CPC分类号： H01L33/405 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/40 ,  H01L2933/0016

摘要： According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer.

摘要翻译： 根据一个实施例，半导体发光器件包括包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层的结构。 该器件还包括设置在该结构的第二半导体层侧上的电极层。 电极层包括厚度不小于10纳米且不大于100纳米的金属部分。 多个开口刺穿金属部分，每个开口具有不小于10纳米且不大于5微米的等效圆直径。 所述装置包括在所述金属部分和所述开口的内表面上提供的无机膜，所述无机膜相对于从所述发光层发射的光具有透射率。

公开(公告)号：US08680549B2

公开(公告)日：2014-03-25

申请号：US12876318

申请日：2010-09-07

申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Eishi Tsutsumi ,  Koji Asakawa

发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Eishi Tsutsumi ,  Koji Asakawa

IPC分类号： H01L33/40

CPC分类号： H01L33/58 ,  H01L33/38 ,  H01L33/387 ,  H01L33/42 ,  H01L33/44

摘要： A semiconductor light-emitting device according to the embodiment includes a substrate, a compound semiconductor layer, a metal electrode layer provided with particular openings, a light-extraction layer, and a counter electrode. The light-extraction layer has a thickness of 20 to 120 nm and covers at least partly the metal part of the metal electrode layer; or otherwise the light-extraction layer has a rugged structure and covers at least partly the metal part of the metal electrode layer. The rugged structure has projections so arranged that their summits are positioned at intervals of 100 to 600 nm, and the heights of the summits from the surface of the metal electrode layer are 200 to 700 nm.

摘要翻译： 根据实施例的半导体发光器件包括衬底，化合物半导体层，设置有特定开口的金属电极层，光提取层和对电极。 光提取层的厚度为20〜120nm，至少部分覆盖金属电极层的金属部分。 否则光提取层具有坚固的结构并且至少部分地覆盖金属电极层的金属部分。 凹凸结构具有突出部，使得它们的顶点以100至600nm的间隔定位，并且来自金属电极层的表面的顶点的高度为200至700nm。

公开(公告)号：US08450824B2

公开(公告)日：2013-05-28

申请号：US13405935

申请日：2012-02-27

申请人： Kenji Nakamura ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Ryota Kitagawa ,  Shinji Nunotani ,  Takanobu Kamakura

发明人： Kenji Nakamura ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Ryota Kitagawa ,  Shinji Nunotani ,  Takanobu Kamakura

IPC分类号： H01L27/146

CPC分类号： H01L31/022425 ,  H01L33/38 ,  H01L33/42 ,  Y02E10/50

摘要： According to one embodiment, an optically transmissive metal electrode includes a plurality of first and second metal wires. The first metal wires are disposed along a first direction, and extend along a second direction intersecting the first direction. The second metal wires are disposed along a third direction parallel with a plane including the first and second directions and intersecting the first direction, contact the first metal wires, and extend along a fourth direction parallel with the plane and intersecting the third direction. A first pitch between centers of the first metal wires is not more than a shortest wavelength in a waveband including visible light. A second pitch between centers of the second metal wires exceeds a longest wavelength in the waveband. A thickness of the first and second metal wires along a direction vertical to the plane is not more than the shortest wavelength.

摘要翻译： 根据一个实施例，透光金属电极包括多个第一和第二金属线。 第一金属线沿着第一方向设置，并且沿着与第一方向相交的第二方向延伸。 第二金属线沿着与包括第一和第二方向的平面平行的第三方向设置并且与第一方向相交，与第一金属线接触，并且沿与平面平行并与第三方向相交的第四方向延伸。 第一金属线的中心之间的第一间距在包括可见光的波段中不超过最短波长。 第二金属线的中心之间的第二间距在波段中超过最长波长。 第一和第二金属线沿垂直于该平面的方向的厚度不大于最短波长。

公开(公告)号：US20130075762A1

公开(公告)日：2013-03-28

申请号：US13405935

申请日：2012-02-27

申请人： Kenji NAKAMURA ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Ryota Kitagawa ,  Shinji Nunotani ,  Takanobu Kamakura

发明人： Kenji NAKAMURA ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Ryota Kitagawa ,  Shinji Nunotani ,  Takanobu Kamakura

IPC分类号： H01L33/62 ,  H05K1/00 ,  H01L31/0224

CPC分类号： H01L31/022425 ,  H01L33/38 ,  H01L33/42 ,  Y02E10/50

摘要： According to one embodiment, an optically transmissive metal electrode includes a plurality of first and second metal wires. The first metal wires are disposed along a first direction, and extend along a second direction intersecting the first direction. The second metal wires are disposed along a third direction parallel with a plane including the first and second directions and intersecting the first direction, contact the first metal wires, and extend along a fourth direction parallel with the plane and intersecting the third direction. A first pitch between centers of the first metal wires is not more than a shortest wavelength in a waveband including visible light. A second pitch between centers of the second metal wires exceeds a longest wavelength in the waveband. A thickness of the first and second metal wires along a direction vertical to the plane is not more than the shortest wavelength.

摘要翻译： 根据一个实施例，透光金属电极包括多个第一和第二金属线。 第一金属线沿着第一方向设置，并且沿着与第一方向相交的第二方向延伸。 第二金属线沿着与包括第一和第二方向的平面平行的第三方向设置并且与第一方向相交，与第一金属线接触，并且沿与平面平行并与第三方向相交的第四方向延伸。 第一金属线的中心之间的第一间距在包括可见光的波段中不超过最短波长。 第二金属线的中心之间的第二间距在波段中超过最长波长。 第一和第二金属线沿垂直于该平面的方向的厚度不大于最短波长。

公开(公告)号：US20120244474A1

公开(公告)日：2012-09-27

申请号：US13430185

申请日：2012-03-26

申请人： Koji ASAKAWA ,  Shigeki Hattori ,  Ryota Kitagawa

发明人： Koji ASAKAWA ,  Shigeki Hattori ,  Ryota Kitagawa

IPC分类号： G03F7/20

CPC分类号： G03F7/16 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0392

摘要： According to one embodiment, a method of forming a pattern includes applying a block copolymer to a substrate, the block copolymer including a first block and a second block, the first block including polyacrylate or polymethacrylate having a side chain to which an alicyclic hydrocarbon group or a hydrocarbon group including a tertiary carbon is introduced, and the second block including polystyrene substituted with hydrocarbon or halogen at an α-position, causing the block copolymer to be phase-separated, irradiating the block copolymer with an energy beam to decompose the second block, and removing the second block with a developer to form a pattern of the first block.

摘要翻译： 根据一个实施方案，形成图案的方法包括将嵌段共聚物施加到基材上，所述嵌段共聚物包括第一嵌段和第二嵌段，所述第一嵌段包括聚丙烯酸酯或聚甲基丙烯酸酯，所述侧链具有脂环族烃基或 导入包含叔碳的烃基，第二嵌段包括在α-位被烃或卤素取代的聚苯乙烯，使嵌段共聚物相分离，用能量束照射嵌段共聚物以分解第二嵌段 并且用显影剂移除第二块以形成第一块的图案。

公开(公告)号：US20120223355A1

公开(公告)日：2012-09-06

申请号：US13222281

申请日：2011-08-31

申请人： Koji Asakawa ,  Akira Fujimoto ,  Ryota Kitagawa ,  Kumi Masunaga ,  Takanobu Kamakura ,  Shinji Nunotani

发明人： Koji Asakawa ,  Akira Fujimoto ,  Ryota Kitagawa ,  Kumi Masunaga ,  Takanobu Kamakura ,  Shinji Nunotani

IPC分类号： H01L33/62 ,  H01L33/36

CPC分类号： H01L33/38 ,  H01L33/0025 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/40 ,  H01L2933/0016

摘要： According to one embodiment, a semiconductor light emitting device includes a structure, a first electrode layer, and a second electrode layer. The structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first electrode layer is provided on the first semiconductor layer side of the structure. The first electrode layer is made of metal and contains a portion contacting the first semiconductor layer. The second electrode layer is provided on the second semiconductor layer side of the structure. The second electrode layer has a metal portion with a thickness of not less than 10 nanometers and not more than 50 nanometers, and a plurality of openings piercing the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers.

摘要翻译： 根据一个实施例，半导体发光器件包括结构，第一电极层和第二电极层。 该结构包括第一半导体层，第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 第一电极层设置在该结构的第一半导体层一侧。 第一电极层由金属制成并且包含接触第一半导体层的部分。 第二电极层设置在该结构的第二半导体层一侧。 第二电极层具有厚度不小于10纳米且不大于50纳米的金属部分，并且穿过金属部分的多个开口，每个开口的当量圆直径不小于10纳米， 不超过5微米。

公开(公告)号：US20120223348A1

公开(公告)日：2012-09-06

申请号：US13221319

申请日：2011-08-30

申请人： Kumi MASUNAGA ,  Ryota KITAGAWA ,  Akira FUJIMOTO ,  Koji ASAKAWA ,  Takanobu KAMAKURA ,  Shinji NUNOTANI

发明人： Kumi MASUNAGA ,  Ryota KITAGAWA ,  Akira FUJIMOTO ,  Koji ASAKAWA ,  Takanobu KAMAKURA ,  Shinji NUNOTANI

IPC分类号： H01L33/60

CPC分类号： H01L33/405 ,  H01L33/38 ,  H01L2933/0016 ,  H01L2933/0083

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion.

摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 该器件还包括与第一半导体层具有电连续性的第一电极层和设置在第二半导体层上的第二电极层，第二电极层包括厚度不小于10纳米且不大于100纳米的金属部分 沿着从第一半导体层到第二半导体层的方向。 多个孔沿着该方向穿过金属部分，沿着具有等于10纳米且不超过5微米的等效圆直径的方向观察每个孔，并且在第二半导体层和第二半导体层之间设置肖特基势垒 金属部分。

公开(公告)号：US20120091499A1

公开(公告)日：2012-04-19

申请号：US13335984

申请日：2011-12-23

申请人： Ryota Kitagawa ,  Koji Asakawa ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Eishi Tsutsumi

发明人： Ryota Kitagawa ,  Koji Asakawa ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Eishi Tsutsumi

IPC分类号： H01L33/62

CPC分类号： H01L33/38 ,  H01L2933/0091

摘要： The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.

摘要翻译： 本发明提供一种半导体发光元件，其包括欧姆接触性优异且能够从整个表面发光的电极部。 放置在光提取侧的电极层包括金属部分和多个开口。 金属部分是连续的，使得零件中的任何一个点位置连续连接而不断裂，并且整个区域的95％或更多的金属部分线性地继续而不断开，直线距离不大于 从有源层发射的光的1/3。 平均开口直径为发射光波长的10nm至1/3。 电极层的厚度为10nm〜200nm，与半导体层良好的欧姆接触。

公开(公告)号：US20120061640A1

公开(公告)日：2012-03-15

申请号：US13037864

申请日：2011-03-01

申请人： Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Masaaki Ogawa

发明人： Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Masaaki Ogawa

IPC分类号： H01L33/06

CPC分类号： H01L33/38 ,  H01L33/40 ,  H01L2933/0016

摘要： A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a second semiconductor layer of a second conductivity type, a light emitting layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions have an equivalent circle diameter being not less than 10 nanometers and not more than 50 micrometers. The second semiconductor layer is provided between the first semiconductor layer and the first electrode layer and includes a first portion in contact with the first electrode layer. The first portion has an impurity concentration of not less than 1×1019/cubic centimeter and not more than 1×1021/cubic centimeter. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The second electrode layer is connected to the first semiconductor layer.

摘要翻译： 半导体发光器件包括第一导电类型的第一半导体层，第一电极层，第二导电类型的第二半导体层，发光层和第二电极层。 第一电极层包括具有多个开口部的金属部。 开口部具有不小于10纳米且不大于50微米的当量圆直径。 第二半导体层设置在第一半导体层和第一电极层之间，并且包括与第一电极层接触的第一部分。 第一部分的杂质浓度不小于1×1019立方厘米，不大于1×1021立方厘米。 发光层设置在第一半导体层和第二半导体层之间。 第二电极层连接到第一半导体层。