公开(公告)号：US07781763B2

公开(公告)日：2010-08-24

申请号：US12078403

申请日：2008-03-31

Applicant: Jung Seok Hahn ,  Do Hwan Kim ,  Bon Won Koo ,  Sang Yoon Lee ,  Hyun Sik Moon

Inventor： Jung Seok Hahn ,  Do Hwan Kim ,  Bon Won Koo ,  Sang Yoon Lee ,  Hyun Sik Moon

IPC: H01L51/05 ,  G03F7/00 ,  H01L51/40 ,  C08F2/46

CPC classification number: G03F7/092 ,  G03F7/0046 ,  G03F7/038

Abstract: Disclosed herein is a composition including a perfluoropolyether derivative, a photosensitive polymer or a copolymer thereof, and a photocuring agent, a passivation layer, organic thin film transistor, and electronic device including the same, a method of forming the passivation layer and methods of fabricating the organic thin film transistor and electronic device. The organic thin film transistor may prevent or reduce oxygen and moisture from infiltrating thereinto, and thus may prevent or reduce the degradation of the performance thereof caused by ambient air, prevent or reduce the deterioration thereof, and may more easily be formed into a pattern, thereby exhibiting characteristics suitable for use in electronics.

Abstract translation: 本文公开了包含全氟聚醚衍生物，光敏聚合物或其共聚物，光固化剂，钝化层，有机薄膜晶体管和包括其的电子器件的组合物，形成钝化层的方法和制造方法 有机薄膜晶体管和电子器件。 有机薄膜晶体管可以防止或减少氧气和水分渗入其中，从而可以防止或减少由环境空气引起的性能的劣化，防止或减少其劣化，并且可以更容易地形成为图案， 从而表现出适用于电子设备的特性。

公开(公告)号：US20100210069A1

公开(公告)日：2010-08-19

申请号：US12656682

申请日：2010-02-12

Applicant: Jong-Baek Seon ,  Sang-Yoon Lee ,  Jeong-il Park ,  Myung-Kwan Ryu ,  Kyung-Bae Park

Inventor： Jong-Baek Seon ,  Sang-Yoon Lee ,  Jeong-il Park ,  Myung-Kwan Ryu ,  Kyung-Bae Park

IPC: H01L21/36 ,  H01B1/02 ,  H01B1/22

CPC classification number: H01L21/02565 ,  H01L21/02554 ,  H01L21/02628 ,  H01L29/7869

Abstract: Disclosed is a solution composition for forming a thin film transistor including a zinc-containing compound, an indium-containing compound, and a compound including at least one metal or metalloid selected from the group consisting of hafnium (Hf), magnesium (Mg), tantalum (Ta), cerium (Ce), lanthanum (La), silicon (Si), germanium (Ge), vanadium (V), niobium (Nb), and yttrium (Y). A method of forming a thin film by using the solution composition, and a method of manufacturing thin film transistor including the thin film are also disclosed.

Abstract translation: 公开了一种用于形成包含含锌化合物，含铟化合物和包含至少一种选自铪（Hf），镁（Mg）， 钽（Ta），铈（Ce），镧（La），硅（Si），锗（Ge），钒（V），铌（Nb）和钇（Y）。 还公开了通过使用溶液组合物形成薄膜的方法，以及制造包括该薄膜的薄膜晶体管的制造方法。

公开(公告)号：US07737435B2

公开(公告)日：2010-06-15

申请号：US11706985

申请日：2007-02-16

Applicant: Jung Seok Hahn ,  Tae-Sang Kim ,  Bang-Lin Lee ,  Sang-Yoon Lee ,  Eun Kyung Lee

Inventor： Jung Seok Hahn ,  Tae-Sang Kim ,  Bang-Lin Lee ,  Sang-Yoon Lee ,  Eun Kyung Lee

IPC: H01L51/30

CPC classification number: C08L65/00 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0097 ,  H01L51/0545 ,  Y02E10/549 ,  Y02P70/521

Abstract: Example embodiments pertain to an organic semiconductor composition, in which low-molecular-weight oligomer compounds are distributed in the spaces of a polymer compound so that the free spaces of the organic semiconductor polymer compound are filled with the low-molecular-weight oligomer compounds upon the formation of an organic semiconductor thin film, thereby increasing π-π stacking effects, and to an organic semiconductor thin film using the same and an organic electronic device employing the thin film. Using the organic semiconductor composition according to example embodiments, a semiconductor thin film and an organic electronic device having improved electrical properties may be manufactured.

Abstract translation: 示例性实施方案涉及有机半导体组合物，其中低分子量低聚物化合物分布在高分子化合物的空间中，使得有机半导体聚合物化合物的自由空间填充有低分子量低聚物化合物 有机半导体薄膜的形成，从而增加了＆pgr; 堆叠效应，以及使用该有机半导体薄膜的有机半导体薄膜和使用薄膜的有机电子器件。 使用根据示例性实施方案的有机半导体组合物，可以制造具有改善的电性能的半导体薄膜和有机电子器件。

公开(公告)号：US20100136414A1

公开(公告)日：2010-06-03

申请号：US12408274

申请日：2009-03-20

Applicant: Dukhyun Choi ,  Sang Yoon Lee ,  Jaeyoung Choi ,  Hansu Kim ,  Sangwoo Kim

Inventor： Dukhyun Choi ,  Sang Yoon Lee ,  Jaeyoung Choi ,  Hansu Kim ,  Sangwoo Kim

IPC: H01M6/42 ,  H01G2/00 ,  H01G13/00

CPC classification number: H01M10/0445 ,  H01M6/42 ,  H01M2010/0495 ,  Y10T29/43 ,  Y10T29/49108 ,  Y10T29/49115

Abstract: An apparatus for storing energy may include: a plurality of nanowire cells electrically connected to each other; and a storage for storing electrical energy generated from the nanowire cells. Each of the plurality of nanowire cells may include: first and second electrodes disposed at an interval; and a nanowire, which is disposed between the first and the second electrodes and made of a piezoelectric material. The plurality of nanowire cells may be electrically connected, so that voltage or current may be increased. Therefore, wireless recharging of the storage connected to the nanowire cells with electrical energy may be enabled.

Abstract translation: 用于存储能量的装置可以包括：彼此电连接的多个纳米线单元; 以及用于存储从纳米线单元产生的电能的存储器。 多个纳米线单元中的每一个可以包括：以间隔设置的第一和第二电极; 和纳米线，其设置在第一和第二电极之间并由压电材料制成。 多个纳米线电池可以电连接，从而可以增加电压或电流。 因此，可以实现利用电能连接到纳米线单元的存储器的无线再充电。

公开(公告)号：US20100127257A1

公开(公告)日：2010-05-27

申请号：US12656256

申请日：2010-01-22

Applicant: Myung-kwan Ryu ,  Sang-yoon Lee ,  Je-hun Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Myung-kwan Ryu ,  Sang-yoon Lee ,  Je-hun Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L29/786

CPC classification number: H01L29/7869

Abstract: Provided is a method of manufacturing a ZnO-based thin film transistor (TFT). The method may include forming source and drain electrodes using one or two wet etchings. A tin (Sn) oxide, a fluoride, or a chloride having relatively stable bonding energy against plasma may be included in a channel layer. Because the source and drain electrodes are formed by wet etching, damage to the channel layer and an oxygen vacancy may be prevented or reduced. Because the material having higher bonding energy is distributed in the channel layer, damage to the channel layer occurring when a passivation layer is formed may be prevented or reduced.

公开(公告)号：US20100066208A1

公开(公告)日：2010-03-18

申请号：US12372369

申请日：2009-02-17

Applicant: Jaeyoung CHOI ,  Jongmin KIM ,  Sang Yoon LEE

Inventor： Jaeyoung CHOI ,  Jongmin KIM ,  Sang Yoon LEE

IPC: H02N2/18

CPC classification number: H02N2/18 ,  B81B2201/038 ,  B81B2203/0376 ,  B81C1/00103 ,  B81C2201/0115

Abstract: Exemplary embodiments relate to an energy converting apparatus and a method for converting energy, which may convert energy of an applied signal into electrical energy. The energy converting apparatus may include at least one nanowire which resonates in response to the applied signal. The resonating nanowire may contact an electrode allowing a current to flow through the electrode and the nanowire by a Schottky contact between the electrode and the nanowire. The method for converting energy may include applying a signal to at least one nanowire to resonate the nanowire, and generating electrical energy through the contact between the resonating nanowire and an electrode.

Abstract translation: 示例性实施例涉及能量转换装置和用于转换能量的方法，其可以将施加的信号的能量转换成电能。 能量转换装置可以包括响应于所施加的信号而谐振的至少一个纳米线。 谐振纳米线可以接触允许电流通过电极和纳米线之间的肖特基接触流过电极和纳米线的电极。 用于转换能量的方法可以包括将信号施加到至少一个纳米线以共振纳米线，以及通过谐振纳米线和电极之间的接触产生电能。

公开(公告)号：US20100065830A1

公开(公告)日：2010-03-18

申请号：US12379856

申请日：2009-03-03

Applicant: Do Hwan Kim ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong II Park ,  Eun Jeong Jeong

Inventor： Do Hwan Kim ,  Hyun Sik Moon ,  Byung Wook Yoo ,  Sang Yoon Lee ,  Bang Lin Lee ,  Jeong II Park ,  Eun Jeong Jeong

IPC: H01L51/30 ,  H01L51/40 ,  H01L21/26

CPC classification number: H01L51/0533

Abstract: Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process.

Abstract translation: 本文公开了一种用于制造有机薄膜晶体管的方法，包括通过一锅反应用自组装单层（SAM）形成化合物处理栅极绝缘层和源极/漏极的表面，以及有机薄膜 通过该方法制造的薄膜晶体管。 根据示例实施例，栅极绝缘层和源极/漏极的表面处理可以通过单个工艺在单个容器中进行。

公开(公告)号：US20100051942A1

公开(公告)日：2010-03-04

申请号：US12615315

申请日：2009-11-10

Applicant: Myung-kwan RYU ,  Jun-seong KIM ,  Sang-yoon LEE ,  Euk-che HWANG ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

Inventor： Myung-kwan RYU ,  Jun-seong KIM ,  Sang-yoon LEE ,  Euk-che HWANG ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

IPC: H01L29/227

CPC classification number: H01L29/7869

Abstract: A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

Abstract translation: 这里提供了一种ZnO基薄膜晶体管（TFT），以及TFT的制造方法。 ZnO基TFT具有包含ZnO和ZnCl的沟道层，其中ZnCl相对于等离子体具有比ZnO高的结合能。 ZnCl是通过整个沟道层形成的，具体地形成在沟道层表面附近的区域。 由于ZnCl强度足够暴露于等离子体蚀刻气体时不会分解，因此可以防止载流子浓度的增加。 ZnCl在沟道层中的分布可能是由于在沟道层图案化期间在等离子体气体中包含氯（Cl）。

公开(公告)号：US20100012942A1

公开(公告)日：2010-01-21

申请号：US12314212

申请日：2008-12-05

Applicant: Myung-kwan Ryu ,  Kyung-bae Park ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Byung-wook Yoo ,  Tae-sang Kim ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Myung-kwan Ryu ,  Kyung-bae Park ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Byung-wook Yoo ,  Tae-sang Kim ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L21/336 ,  H01L29/786

CPC classification number: H01L29/78624 ,  H01L29/66765

Abstract: Provided may be a Poly-Si thin film transistor (TFT) and a method of manufacturing the same. The Poly-Si TFT may include a first Poly-Si layer on an active layer formed of Poly-Si and doped with a low concentration; and a second Poly-Si layer on the first Poly-Si layer and doped with the same concentration as the first Poly-Si layer or with a higher concentration than the first Poly-Si layer, wherein lightly doped drain (LDD) regions capable of reducing leakage current may be formed in inner end portions of the first Poly-Si layer.

Abstract translation: 提供可以是多晶硅薄膜晶体管（TFT）及其制造方法。 多晶硅TFT可以包括由多晶硅形成并掺杂低浓度的有源层上的第一多晶硅层; 和在第一多晶硅层上掺杂与第一多晶硅层相同的浓度或具有比第一多晶硅层更高的浓度的第二多晶硅层，其中能够 可以在第一多晶硅层的内端部形成减少漏电流。

公开(公告)号：US07646014B2

公开(公告)日：2010-01-12

申请号：US11606287

申请日：2006-11-30

Applicant: Joo Young Kim ,  Bon Won Koo ,  Eun Kyung Lee ,  Sang Yoon Lee ,  Bang Lin Lee

Inventor： Joo Young Kim ,  Bon Won Koo ,  Eun Kyung Lee ,  Sang Yoon Lee ,  Bang Lin Lee

IPC: H01L35/24

CPC classification number: H01L51/105 ,  H01L51/0036 ,  H01L51/052 ,  H01L51/0545

Abstract: Disclosed is an organic thin film transistor, including a substrate, a gate electrode, a gate insulating layer, an organic semiconductor layer, and source/drain electrodes, in which a fluorine-based polymer thin film is provided between the source/drain electrodes and the organic semiconductor layer. A method of fabricating such an organic thin film transistor is also provided. According to example embodiments, the organic thin film transistor may have increased charge mobility and an Ion/Ioff ratio, due to decreased contact resistance between the source/drain electrodes and the organic semiconductor layer. Moreover, upon the formation of the organic semiconductor layer and insulating film, a wet process may be more easily applied, thus simplifying the fabrication process and decreasing the fabrication cost.

Abstract translation: 公开了一种有机薄膜晶体管，其包括基板，栅极电极，栅极绝缘层，有机半导体层和源极/漏极，其中在源极/漏极之间设置氟基聚合物薄膜和 有机半导体层。 还提供了制造这种有机薄膜晶体管的方法。 根据示例性实施例，由于源/漏电极和有机半导体层之间的接触电阻降低，有机薄膜晶体管可能具有增加的电荷迁移率和Ion / Ioff比。 此外，在形成有机半导体层和绝缘膜时，可以更容易地应用湿法，从而简化制造工艺并降低制造成本。