公开(公告)号：US08884318B2

公开(公告)日：2014-11-11

申请号：US13034279

申请日：2011-02-24

Applicant: Su Yeol Lee ,  Yong Tae Kim ,  Jin Bock Lee ,  Gi Bum Kim

Inventor： Su Yeol Lee ,  Yong Tae Kim ,  Jin Bock Lee ,  Gi Bum Kim

IPC: H01L33/08 ,  H01L23/00 ,  H01L27/15 ,  H01L33/30 ,  H01L33/62

CPC classification number: H01L27/156 ,  H01L24/24 ,  H01L27/153 ,  H01L33/30 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor light emitting device includes a substrate; a plurality of light emitting cells disposed on the top surface of the substrate, the light emitting cells each having an active layer; a plurality of connection parts formed on the substrate with the light emitting cells formed thereon to connect the light emitting cells in a parallel or series-parallel configuration; and an insulation layer formed on the surface of the light emitting cell to prevent an undesired connection between the connection parts and the light emitting cell. The light emitting cells comprise at least one defective light emitting cell, and at least one of the connection parts related to the defective light emitting cell is disconnected.

Abstract translation: 一种半导体发光器件，包括：衬底; 多个发光单元，设置在所述基板的上表面上，所述发光单元各自具有有源层; 形成在所述基板上的多个连接部分，其上形成有发光单元，以将所述发光单元以并联或串联平行结构连接; 以及形成在发光单元的表面上的绝缘层，以防止连接部分和发光单元之间的不期望的连接。 发光单元包括至少一个有缺陷的发光单元，并且与缺陷发光单元有关的至少一个连接部分断开。

公开(公告)号：US08735923B2

公开(公告)日：2014-05-27

申请号：US13251897

申请日：2011-10-03

Applicant: Tae Sung Jang ,  Seok Min Hwang ,  Su Yeol Lee ,  Jong Gun Woo

Inventor： Tae Sung Jang ,  Seok Min Hwang ,  Su Yeol Lee ,  Jong Gun Woo

IPC: H01L29/18 ,  H01L29/30 ,  H01L33/00 ,  H01L21/00

CPC classification number: H01L33/20 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0091

Abstract: There is provided a semiconductor light emitting device and method of making the same, having a first conductivity type semiconductor layer; an active layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the active layer and including a plurality of holes; and a transparent electrode formed on the second conductivity type semiconductor layer.

Abstract translation: 提供了具有第一导电类型半导体层的半导体发光器件及其制造方法， 形成在所述第一导电类型半导体层上的有源层; 形成在有源层上并包括多个孔的第二导电类型半导体层; 以及形成在第二导电类型半导体层上的透明电极。

公开(公告)号：US08686450B2

公开(公告)日：2014-04-01

申请号：US11892445

申请日：2007-08-23

Applicant: Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

Inventor： Jae Hoon Lee ,  Hee Seok Choi ,  Jeong Tak Oh ,  Su Yeol Lee

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L33/0079 ,  H01L33/22 ,  H01L2933/0083

Abstract: The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.

Abstract translation: 本发明涉及一种垂直构造的GaN基发光二极管的制造方法。 制造垂直结构的GaN基发光二极管的方法包括在衬底上形成GaN层; 将化合物层图案化成预定的形状; 通过外延横向过度生长工艺在图案化的化合物层上形成n型GaN层，并在n型GaN层上依次形成有源层和p型GaN层; 在p型GaN层上形成结构支撑层; 在形成结构支撑层之后，依次去除衬底和形成在衬底上的GaN层; 去除在去除GaN层之后暴露的图案化合物层，以形成图案化为凹形的n型GaN层; 在形成凹形的n型GaN层上形成n型电极。

公开(公告)号：US20130002139A1

公开(公告)日：2013-01-03

申请号：US13536338

申请日：2012-06-28

Applicant: Tae Hun KIM ,  Seung Wan Chae ,  Sung Tae Kim ,  Su Yeol Lee

Inventor： Tae Hun KIM ,  Seung Wan Chae ,  Sung Tae Kim ,  Su Yeol Lee

IPC: H05B37/02

CPC classification number: H01L25/167 ,  H01L33/486 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/00014

Abstract: There is provided a semiconductor light emitting device package including: a semiconductor substrate having a first principal surface and a second principal surface opposed thereto; a light source disposed on a first principal surface side of the semiconductor substrate; a plurality of electrode pads disposed on a second principal side of the semiconductor substrate; a conductive via extended from the plurality of electrode pads and penetrating the semiconductor substrate; and a driving circuit unit including a plurality of diodes obtained through a pn junction formed by a p-type region and an n-type region, and electrically connected to the conductive via and the light source.

Abstract translation: 提供了一种半导体发光器件封装，包括：具有与其相对的第一主表面和第二主表面的半导体衬底; 设置在所述半导体基板的第一主面侧的光源; 设置在所述半导体基板的第二主面上的多个电极焊盘; 从所述多个电极焊盘延伸并穿透所述半导体衬底的导电通孔; 以及驱动电路单元，其包括通过由p型区域和n型区域形成的pn结获得的多个二极管，并且电连接到导电通孔和光源。

公开(公告)号：US20120080707A1

公开(公告)日：2012-04-05

申请号：US13251897

申请日：2011-10-03

Applicant: Tae Sung JANG ,  Seok Min Hwang ,  Su Yeol Lee ,  Jong Gun Woo

Inventor： Tae Sung JANG ,  Seok Min Hwang ,  Su Yeol Lee ,  Jong Gun Woo

IPC: H01L33/60 ,  H01L33/42

CPC classification number: H01L33/20 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0091

Abstract: There is provided a semiconductor light emitting device and method of making the same, having a first conductivity type semiconductor layer; an active layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the active layer and including a plurality of holes; and a transparent electrode formed on the second conductivity type semiconductor layer.

Abstract translation: 提供了具有第一导电类型半导体层的半导体发光器件及其制造方法， 形成在所述第一导电类型半导体层上的有源层; 形成在有源层上并包括多个孔的第二导电类型半导体层; 以及形成在第二导电类型半导体层上的透明电极。

公开(公告)号：US08115220B2

公开(公告)日：2012-02-14

申请号：US11889562

申请日：2007-08-14

Applicant: Su Yeol Lee ,  Sang Ho Yoon ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

Inventor： Su Yeol Lee ,  Sang Ho Yoon ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC: H01L33/00

CPC classification number: H01L33/32 ,  H01L33/14 ,  H01L33/40

Abstract: Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.

公开(公告)号：US07791100B2

公开(公告)日：2010-09-07

申请号：US11602285

申请日：2006-11-21

Applicant: Su Yeol Lee ,  Dong Woo Kim ,  Seok Beom Choi ,  Tae Jun Kim

Inventor： Su Yeol Lee ,  Dong Woo Kim ,  Seok Beom Choi ,  Tae Jun Kim

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L33/38

Abstract: A vertical GaN-based LED includes an n-type bonding pad; an n-electrode formed under the n-type bonding pad; a light-emitting structure formed by sequentially laminating an n-type GaN layer, an active layer, and a p-type GaN layer under the n-electrode; a p-electrode formed under the light-emitting structure; and a support layer formed under the p-electrode. The light-emitting structure has or or more trenches which are spaced at a predetermined distance with the n-electrode from the outermost side of the light-emitting structure and in which the active layer of the light-emitting structure is removed.

Abstract translation: 垂直GaN基LED包括n型接合焊盘; 形成在n型焊盘下面的n电极; 通过在n电极下依次层叠n型GaN层，有源层和p型GaN层而形成的发光结构体; 形成在发光结构下的p电极; 以及形成在p电极下方的支撑层。 发光结构具有与n电极与发光结构的最外侧隔开预定距离的沟槽，并且其中除去发光结构的有源层。

公开(公告)号：US07695989B2

公开(公告)日：2010-04-13

申请号：US12406540

申请日：2009-03-18

Applicant: Doo Go Baik ,  Bang Won Oh ,  Seok Beom Choi ,  Su Yeol Lee

Inventor： Doo Go Baik ,  Bang Won Oh ,  Seok Beom Choi ,  Su Yeol Lee

IPC: H01L21/00

CPC classification number: H01L33/14 ,  H01L33/02 ,  H01L33/32

Abstract: A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED can prevent the damage of an n-type GaN layer contacting an n-type electrode, thereby stably securing the contact resistance of the n-electrode. The vertical GaN-based LED includes: a support layer; a p-electrode formed on the support layer; a p-type GaN layer formed on the p-electrode; an active layer formed on the p-type GaN layer; an n-type GaN layer for an n-type electrode contact, formed on the active layer; an etch stop layer formed on the n-type GaN layer to expose a portion of the n-type GaN layer; and an n-electrode formed on the n-type GaN layer exposed by the etch stop layer.

Abstract translation: 提供了一种垂直GaN基LED及其制造方法。 垂直GaN基LED可以防止与n型电极接触的n型GaN层的损坏，从而稳定地确保n电极的接触电阻。 垂直GaN基LED包括：支撑层; 形成在支撑层上的p电极; 形成在p电极上的p型GaN层; 形成在p型GaN层上的有源层; 在有源层上形成用于n型电极接触的n型GaN层; 形成在所述n型GaN层上以暴露所述n型GaN层的一部分的蚀刻停止层; 以及形成在由蚀刻停止层露出的n型GaN层上的n电极。

公开(公告)号：US07687818B2

公开(公告)日：2010-03-30

申请号：US12177517

申请日：2008-07-22

Applicant: Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

Inventor： Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC: H01L33/00

CPC classification number: H01L33/46 ,  H01L33/0079 ,  H01L33/145 ,  H01L33/405

Abstract: There is provided a semiconductor light emitting device having excellent light extraction efficiency to efficiently reflect light moving into the device by increasing the total reflectivity of a reflective layer. A semiconductor light emitting device according to an aspect of the invention includes: a substrate, a reflective electrode, a first conductivity semiconductor layer, an active layer, and a second conductivity type semiconductor layer that are sequentially stacked. Here, the reflective electrode includes; a first reflective layer provided on the substrate and including a conductive reflective material reflecting light generated from the active layer; and a second reflective layer provided on the first reflective layer, including one or more dielectric portions reflecting light generated from the active layer, and one or more contact holes filled with a conductive filler to electrically connect the first conductivity type semiconductor layer and the first reflective layer, and having a greater thickness than a wavelength of the generated light.

Abstract translation: 提供了具有优异的光提取效率的半导体发光器件，以通过增加反射层的总反射率来有效地反射移入器件的光。 根据本发明的一个方面的半导体发光器件包括：依次堆叠的衬底，反射电极，第一导电半导体层，有源层和第二导电类型半导体层。 这里，反射电极包括： 第一反射层，设置在所述基板上，并且包括反射从所述有源层产生的光的导电反射材料; 以及设置在所述第一反射层上的第二反射层，包括反射从所述有源层产生的光的一个或多个介电部分和填充有导电填料的一个或多个接触孔，以将所述第一导电类型半导体层和所述第一反射层 并且具有比所产生的光的波长更大的厚度。

公开(公告)号：US20090221110A1

公开(公告)日：2009-09-03

申请号：US12466086

申请日：2009-05-14

Applicant: Su Yeol LEE ,  Sang Ho Yoon ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

Inventor： Su Yeol LEE ,  Sang Ho Yoon ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC: H01L21/28

CPC classification number: H01L33/32 ,  H01L33/14 ,  H01L33/40

Abstract: Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.

Abstract translation: 提供包括n电极的垂直LED; 形成在n电极下面的n型GaN层，n型GaN层具有与n电极接触的表面，该表面具有比N大的Ga的Ga + N层; 形成在n型GaN层下面的有源层; 形成在有源层下面的p型GaN层; 形成在p型GaN层下面的p电极; 以及在p电极下面形成的结构支撑层。