公开(公告)号：US07416942B2

公开(公告)日：2008-08-26

申请号：US11708532

申请日：2007-02-21

申请人： Yukiteru Matsui ,  Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Yukiteru Matsui ,  Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/336 ,  H01L21/8238 ,  H01L21/461

CPC分类号： H01L27/11543 ,  C09G1/02 ,  H01L21/3212 ,  H01L21/7684 ,  H01L27/11526

摘要： A method for manufacturing a semiconductor device is provided. The method includes successively forming a first silicon film and a mask film above a semiconductor substrate through a gate insulating film, forming a plurality of trenches in the first silicon film and in the mask film to a depth to reach the semiconductor substrate, filling the plurality of trenches with the silicon oxide film, removing the mask film to expose the first silicon film existing between the silicon oxide films, selectively growing a second silicon film on the first silicon film, planarizing the second silicon film using an alkaline slurry exhibiting a pH of 13 or less and containing abrasive grains and a cationic surfactant, thereby obtaining a floating gate electrode film comprising the first and second silicon films, forming an interelectrode insulating film on the entire surface, and forming a control gate electrode film on the interelectrode insulating film.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括通过栅极绝缘膜在半导体衬底上连续地形成第一硅膜和掩模膜，在第一硅膜和掩模膜中形成多个沟槽到达半导体衬底的深度，填充多个 的沟槽，去除掩模膜以暴露存在于氧化硅膜之间的第一硅膜，选择性地生长第一硅膜上的第二硅膜，使用表现出pH为 13以下，含有磨粒和阳离子性表面活性剂，从而得到包含第一和第二硅膜的浮栅电极膜，在整个表面上形成电极间绝缘膜，并在电极间绝缘膜上形成控制栅极电极膜。

公开(公告)号：US20070111433A1

公开(公告)日：2007-05-17

申请号：US11594726

申请日：2006-11-09

申请人： Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Yukiteru Matsui ,  Takeshi Nishioka ,  Hiroyuki Yano

发明人： Shinichi Hirasawa ,  Atsushi Shigeta ,  Kiyotaka Miyano ,  Yukiteru Matsui ,  Takeshi Nishioka ,  Hiroyuki Yano

IPC分类号： H01L21/8242

CPC分类号： H01L27/105 ,  H01L27/11526 ,  H01L27/11543 ,  H01L29/40114 ,  H01L29/66825

摘要： A method for manufacturing a semiconductor device comprises forming a first silicon layer above a semiconductor substrate; forming a stopper layer on said first silicon layer; partially removing said stopper layer and said first silicon layer above said semiconductor substrate to form a plurality of trenches; forming an insulating layer on said stopper layer with inside of said trenches; partially removing said insulating layer to expose said stopper layer; after partially removing said insulating layer, removing said stopper layer to expose said first silicon layer; selectively growing second silicon layer on said exposed first silicon layer; nonselectively growing a third silicon layer on said second silicon layer; and polishing at least a surface of said third silicon layer by performing chemical mechanical polishing.

摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成第一硅层; 在所述第一硅层上形成阻挡层; 部分地去除所述半导体衬底之上的所述阻挡层和所述第一硅层以形成多个沟槽; 在所述沟槽的内部在所述阻挡层上形成绝缘层; 部分地去除所述绝缘层以暴露所述阻挡层; 在部分地去除所述绝缘层之后，去除所述阻挡层以露出所述第一硅层; 在所述暴露的第一硅层上选择性地生长第二硅层; 在所述第二硅层上非选择地生长第三硅层; 以及通过进行化学机械抛光来抛光所述第三硅层的至少一个表面。

公开(公告)号：US20060097399A1

公开(公告)日：2006-05-11

申请号：US11265231

申请日：2005-11-03

申请人： Masaaki Hatano ,  Motoya Okazaki ,  Junichi Wada ,  Takeshi Nishioka ,  Hisashi Kaneko ,  Takeshi Fujimaki ,  Kazuyuki Higashi ,  Kenji Yoshida ,  Noriaki Matsunaga

发明人： Masaaki Hatano ,  Motoya Okazaki ,  Junichi Wada ,  Takeshi Nishioka ,  Hisashi Kaneko ,  Takeshi Fujimaki ,  Kazuyuki Higashi ,  Kenji Yoshida ,  Noriaki Matsunaga

IPC分类号： H01L23/48

CPC分类号： G06F17/5068

摘要： A method for generating a pattern includes reading out an interconnect layout and a hole layout, the interconnect layout prescribing interconnect patterns, the hole layout prescribing hole patterns configured to connect to the interconnect patterns; extracting one of the hole patterns to be connected within the same interconnect layer level to one of the interconnect patterns in a pattern processing area; extracting a first processing area including the extracted hole pattern; calculating a first pattern density of the interconnect patterns included in the first processing area; and generating first additional patterns in the first processing area based on the first pattern density.

摘要翻译： 一种用于产生图案的方法包括：读出互连布局和孔布局;布置规定互连图案的布局布局;布置配置为连接到互连图案的孔图案的孔布局; 在图案处理区域中将在相同互连层级中连接的孔图案中的一个提取到所述互连图案之一; 提取包括所提取的孔图案的第一处理区域; 计算包括在第一处理区域中的互连图案的第一图案密度; 以及基于所述第一图案密度在所述第一处理区域中生成第一附加图案。

公开(公告)号：US06867138B2

公开(公告)日：2005-03-15

申请号：US10217646

申请日：2002-08-14

申请人： Naoto Miyashita ,  Takeshi Nishioka

发明人： Naoto Miyashita ,  Takeshi Nishioka

IPC分类号： H01L21/304 ,  B24B37/04 ,  C09G1/02 ,  H01L21/321 ,  H01L21/20

CPC分类号： H01L21/3212 ,  B24B37/044 ,  C09G1/02

摘要： The surface of a semiconductor device is polished by first supplying a polishing pad with a slurry that contains a solvent, abrasive grains, and an additive for making the viscosity of the slurry variable so that the top portion of the polishing pad is soaked with the slurry, then supplying the polishing pad with a viscosity modifier for increasing the viscosity of the slurry and hardening the top portion of the polishing pad soaked with the slurry, and finally polishing the surface of the semiconductor device with the slurry having its viscosity increased and the polishing pad having its top portion hardened.

摘要翻译： 通过首先向抛光垫提供含有溶剂，磨料颗粒和添加剂的浆料来抛光半导体器件的表面，以使浆料的粘度可变，使得抛光垫的顶部用浆料浸泡 然后向抛光垫提供粘度调节剂，以增加浆料的粘度并硬化用浆料浸泡的抛光垫的顶部，最后用其粘度增加的浆料和抛光剂抛光半导体器件的表面 垫的顶部硬化。

公开(公告)号：US5208843A

公开(公告)日：1993-05-04

申请号：US700861

申请日：1991-05-16

申请人： Hitoshi Marumo ,  Masaru Ishizuka ,  Takeshi Nishioka ,  Tomiya Sasaki

发明人： Hitoshi Marumo ,  Masaru Ishizuka ,  Takeshi Nishioka ,  Tomiya Sasaki

IPC分类号： B22F3/16 ,  H01J9/14 ,  H01J35/10 ,  H01J35/16

CPC分类号： H01J35/101 ,  B22F3/16 ,  H01J35/16 ,  B22F3/17 ,  B22F5/106 ,  H01J2235/165

摘要： A rotary anode x-ray tube includes a vacuum vessel in which a cathode, an anode target, a connecting rod, a rotor, bearings, and a heat conducting plate are arranged. The cathode electrode emits electrons. The anode target generates x-rays when electrons emitted from the cathode electrode collide with the target. The connecting rod supports the anode target. The connecting rod is constituted by a rod member consisting of a pulverized sintered material. The rotor is mounted on the connecting rod. The anode target is rotatably supported by the bearings. The heat conducting plate is arranged between the anode target and the rotor. A heat conducting plate made of a material having excellent heat conduction characteristics can be arranged between the anode target and the rotor. The connecting rod is manufactured by processes such as plasticization including tube spinning.

摘要翻译： 旋转阳极x射线管包括其中布置阴极，阳极靶，连杆，转子，轴承和导热板的真空容器。 阴极发射电子。 当从阴极发射的电子与靶碰撞时，阳极靶产生X射线。 连杆支撑阳极靶。 连杆由由粉碎的烧结材料构成的杆构件构成。 转子安装在连杆上。 阳极靶由轴承可旋转地支撑。 导热板配置在阳极靶和转子之间。 可以在阳极靶和转子之间设置由具有优异导热特性的材料制成的导热板。 连杆通过包括管纺的增塑等工艺制造。

公开(公告)号：US4497865A

公开(公告)日：1985-02-05

申请号：US425960

申请日：1982-09-28

申请人： Satoyuki Minami ,  Kazuhiro Tanaka ,  Takeshi Nishioka

发明人： Satoyuki Minami ,  Kazuhiro Tanaka ,  Takeshi Nishioka

IPC分类号： B29C55/00 ,  B29C55/06 ,  B29C55/14 ,  B29C55/16 ,  C08J5/18 ,  G11B5/73 ,  G11B5/68

CPC分类号： C08J5/18 ,  B29C55/005 ,  B29C55/065 ,  B29C55/143 ,  B29C55/16 ,  G11B5/7305 ,  B29K2067/00 ,  C08J2367/02 ,  Y10S428/90 ,  Y10S428/91 ,  Y10T428/263 ,  Y10T428/264 ,  Y10T428/265 ,  Y10T428/31786

摘要： The present invention relates to a polyethylene terephthalate film having the sum of F-5 values in longitudinal and transverse directions of 3500 to 5000 kg/cm.sup.2, absolute heat shrinkages in longitudinal and transverse directions at 100.degree. C. of up to 2.5% and amorphous orientation factor of -1.5 to 0.5, a process for the production thereof and a magnetic recording medium containing the film as a base. The polyethylene terephthalate film useful as a magnetic recording medium having super high-tensile-strength in both longitudinal and transverse directions and a low heat shrinkage is provided, while it has been considered that such properties could not be obtained in polyethylene terephthalate film.

摘要翻译： 本发明涉及一种聚对苯二甲酸乙二醇酯薄膜，其纵向和横向的F-5值的总和为3500-5000kg / cm2，100℃下的纵向和横向绝对热收缩高达2.5％，无定形 取向因子为-1.5〜0.5，其制造方法和含有该膜为基底的磁记录介质。 提供了可用作在纵向和横向都具有超高拉伸强度并且具有低热收缩率的磁记录介质的聚对苯二甲酸乙二醇酯膜，同时认为在聚对苯二甲酸乙二醇酯膜中不能获得这些性能。