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    Projection system for EUV lithography
    32.
    发明授权
    Projection system for EUV lithography 有权
    EUV光刻投影系统

    公开(公告)号：US07151592B2

    公开(公告)日：2006-12-19

    申请号：US10454830

    申请日：2003-06-04

    Applicant: Russell Hudyma ,  Hans-Jürgen Mann ,  Udo Dinger

    Inventor： Russell Hudyma ,  Hans-Jürgen Mann ,  Udo Dinger

    IPC: G03B27/54 ,  G03B27/72 ,  G02B5/10

    CPC classification number: G03F7/70233 ,  G02B17/0652 ,  G02B17/0657 ,  G03F7/70275

    Abstract: An EUV optical projection system includes at least six mirrors (M1, M2, M3, M4, M5, M6) for imaging an object (OB) to an image (IM). At least one mirror pair is preferably configured as an at least phase compensating mirror pair. The system is preferably configured to form an intermediate image (IMI) along an optical path from the object (OB) to the image (IM) between a second mirror (M2) and a third mirror (M3), such that a first mirror (M1) and the second mirror (M2) form a first optical group (G1) and the third mirror (M3), a fourth mirror (M4), a fifth mirror (M5) and a sixth mirror (M6) form a second optical group (G1). The system also preferably includes an aperture stop (APE) located along the optical path from the object (OB) to the image (IM) between the first mirror (M1) and the second mirror (M2). The second mirror (M2) is preferably convex, and the third mirror (M3) is preferably concave. The system preferably forms an image (IM) with a numerical aperture greater than 0.18.

    Abstract translation: EUV光学投影系统包括用于将物体（OB）成像到图像（IM）的至少六个反射镜（M 1，M 2，M 3，M 4，M 5，M 6）。 优选地，至少一个镜对配置为至少相位补偿镜对。 该系统优选地被配置成沿着从物体（OB）到第二反射镜（M 2）和第三反射镜（M 3）之间的图像（IM））的光路形成中间图像（IMI），使得第一 反射镜（M 1）和第二反射镜（M 2）形成第一光学组（G 1）和第三反射镜（M 3），第四反射镜（M 4），第五反射镜（M5）和第六反射镜 （M 6）形成第二光学组（G 1）。 该系统还优选地包括沿着从物体（OB）到第一反射镜（M 1）和第二反射镜（M 2）之间的图像（IM））的光路定位的孔径光阑（APE）。 第二镜（M 2）优选为凸面，第三镜（M 3）优选为凹面。 该系统优选地形成数值孔径大于0.18的图像（IM）。

    Substrate material for X-ray optical components
    33.
    发明授权
    Substrate material for X-ray optical components 失效
    X射线光学部件用基板材料

    公开(公告)号：US07031428B2

    公开(公告)日：2006-04-18

    申请号：US10779516

    申请日：2004-02-13

    Applicant: Udo Dinger ,  Frank Eisert ,  Martin Weiser ,  Konrad Knapp ,  Ina Mitra ,  Hans Morian

    Inventor： Udo Dinger ,  Frank Eisert ,  Martin Weiser ,  Konrad Knapp ,  Ina Mitra ,  Hans Morian

    IPC: G21K5/04 ,  G21K1/06 ,  C03C10/00

    CPC classification number: G21K1/06 ,  C03C10/0009 ,  C03C19/00 ,  C03C23/0055 ,  C03C2204/08

    Abstract: There is provided a substrate material for an optical component for X-rays of wavelength λR. The substrate includes (a) a glass phase made of amorphous material having a positive coefficient of thermal expansion, and (b) a crystal phase including microcrystallites having a negative coefficient of thermal expansion and a mean size of less than about 4 λR. The substrate material has a stoichiometric ratio of the crystal phase to the glass phase such that a coefficient of thermal expansion of the substrate material is less than about 5×10−6 K−1 in a temperature range of about 20 °C. to 100°C. The substrate material, following a surface treatment, has a high spatial frequency roughness (HSFR) of less than about λR/30 rms.

    Abstract translation: 提供了用于波长λλX的X射线的光学部件的基板材料。 该基板包括（a）由具有正的热膨胀系数的非晶材料制成的玻璃相，和（b）包含具有负的热膨胀系数和平均尺寸小于约4λλ的微晶的结晶相， R 。 衬底材料具有晶相与玻璃相的化学计量比，使得衬底材料的热膨胀系数小于约5×10 -6 K -1 在约20℃的温度范围内。 至100℃。 在表面处理之后，衬底材料具有小于约λ/ 30 / 30rms的高空间频率粗糙度（HSFR）。

    Projection system for EUV lithography
    34.
    发明申请
    Projection system for EUV lithography 有权

    公开(公告)号：US20060050258A1

    公开(公告)日：2006-03-09

    申请号：US11243407

    申请日：2005-10-04

    Applicant: Russell Hudyma ,  Hans-Jurgen Mann ,  Udo Dinger

    Inventor： Russell Hudyma ,  Hans-Jurgen Mann ,  Udo Dinger

    IPC: G03B27/54

    CPC classification number: G02B17/0657 ,  G02B17/0652 ,  G03B27/54 ,  G03F7/70233 ,  G03F7/70275

    Abstract: An EUV optical projection system includes at least six reflecting surfaces for imaging an object (OB) on an image (IM). The system is preferably configured to form an intermediate image (IMI) along an optical path from the object (OB) to the image (IM) between a secondary mirror (M2) and a tertiary mirror (M3), such that a primary mirror (M1) and the secondary mirror (M2) form a first optical group (G1) and the tertiary mirror (M3), a fourth mirror (M4), a fifth mirror (M5) and a sixth mirror (M6) form a second optical group (G2). The system also preferably includes an aperture stop (APE) located along the optical path from the object (OB) to the image (IM) between the primary mirror (M1) and the secondary mirror (M2). The secondary mirror (M2) is preferably concave, and the tertiary mirror (M3) is preferably convex. Each of the six reflecting surfaces preferably receives a chief ray (CR) from a central field point at an incidence angle of less than substantially 15°. The system preferably has a numerical aperture greater than 0.18 at the image (IM). The system is preferably configured such that a chief ray (CR) converges toward the optical axis (OA) while propagating between the secondary mirror (M2) and the tertiary mirror (M3).

    6-mirror microlithography projection objective
    37.
    发明授权
    6-mirror microlithography projection objective 失效
    6镜微光投影物镜

    公开(公告)号：US06867913B2

    公开(公告)日：2005-03-15

    申请号：US09920285

    申请日：2001-08-01

    Applicant: Hans-Jürgen Mann ,  Udo Dinger ,  Michael Mühlbeyer

    Inventor： Hans-Jürgen Mann ,  Udo Dinger ,  Michael Mühlbeyer

    IPC: G02B17/06 ,  G03F7/20 ,  G02B17/00

    CPC classification number: G03F7/70233 ,  G02B17/0657

    Abstract: There is provided a microlithography projection objective for short wavelengths, with an entrance pupil and an exit pupil for imaging an object field in an image field, which represents a segment of a ring field, in which the segment has an axis of symmetry and an extension perpendicular to the axis of symmetry and the extension is at least 20 mm. The objective comprises a first (S1), a second (S2), a third (S3), a fourth (S4), a fifth (S5) and a sixth mirror (S6) in centered arrangement relative to an optical axis. Each of these mirrors have an off-axis segment, in which the light beams traveling through the projection objective impinge. The diameter of the off-axis segment of the first, second, third, fourth, fifth and sixth mirrors as a function of the numerical aperture NA of the objective at the exit pupil is ≦1200 mm * NA.

    Abstract translation: 提供了用于短波长的微光刻投影物镜，具有用于对图像场中的物场进行成像的入射光瞳和出射光瞳，其表示环形场的区段，其中该区段具有对称轴和延伸部 垂直于对称轴和延伸部至少为20mm。 目标包括相对于光轴居中排列的第一（S1），第二（S2），第三（S3），第四（S4），第五（S5）和第六反射镜（S6）。 这些反射镜中的每一个具有离轴部分，其中穿过投影物镜的光束撞击其中。 作为出射光瞳处的物镜的数值孔径NA的函数的第一，第二，第三，第四，第五和第六反射镜的离轴部分的直径为<= 1200MM * NA。

    Reduction objective for extreme ultraviolet lithography
    38.
    发明授权
    Reduction objective for extreme ultraviolet lithography 有权
    极光紫外光刻的减量目标

    公开(公告)号：US06244717B1

    公开(公告)日：2001-06-12

    申请号：US09322813

    申请日：1999-05-28

    Applicant: Udo Dinger

    Inventor： Udo Dinger

    IPC: G02B510

    CPC classification number: G03F7/70358 ,  G02B17/0663 ,  G03F7/70233 ,  Y10S359/90

    Abstract: A reduction objective, a projection exposure apparatus with a reduction objective, and a method of use thereof are disclosed. The reduction objective comprises four (primary, secondary, tertiary, and quaternary) mirrors in centered arrangement with respect to an optical axis. The primary mirror is a convex mirror and the second mirror has a positive angular magnification. The reduction objective has an obscuration-free light path and is suitable for annular field scanning operation, such as is used in soft X-ray, i.e. and EUV and UV, lithography.

    Abstract translation: 公开了一种还原目标，具有还原目标的投影曝光装置及其使用方法。 减速目标包括相对于光轴居中布置的四个（一次，二次，三次和四次）反射镜。 主镜是凸面镜，第二镜具有正角放大率。 还原物镜具有无遮挡的光路，适用于环形场扫描操作，例如用于软X射线，即EUV和UV光刻。

    Facet mirror for use in a projection exposure apparatus for microlithography
    39.
    发明授权
    Facet mirror for use in a projection exposure apparatus for microlithography 有权
    用于微光刻的投影曝光装置的分面镜

    公开(公告)号：US09411241B2

    公开(公告)日：2016-08-09

    申请号：US12848603

    申请日：2010-08-02

    Applicant: Udo Dinger ,  Martin Endres ,  Armin Werber ,  Norbert Muehlberger ,  Florian Bach

    Inventor： Udo Dinger ,  Martin Endres ,  Armin Werber ,  Norbert Muehlberger ,  Florian Bach

    IPC: G03B27/52 ,  G03F7/20 ,  G02B26/06 ,  G02B26/08

    CPC classification number: G03F7/702 ,  G02B5/09 ,  G02B26/06 ,  G02B26/0816 ,  G02B26/0833 ,  G02B27/0927 ,  G03F7/70075 ,  G03F7/70116

    Abstract: A facet mirror is to be used as a bundle-guiding optical component in a projection exposure apparatus for microlithography. The facet mirror has a plurality of separate mirrors. For individual deflection of incident illumination light, the separate mirrors are in each case connected to an actuator in such a way that they are separately tiltable about at least one tilt axis. A control device, which is connected to the actuators, is configured in such a way that a given grouping of the separate mirrors can be grouped into separate mirror groups that include in each case at least two separate mirrors. The result is a facet mirror which, when installed in the projection exposure apparatus, increases the variability for setting various illumination geometries of an object field to be illuminated by the projection exposure apparatus. Various embodiments of separate mirrors for forming the facet mirrors are described.

    Abstract translation: 在用于微光刻的投影曝光装置中，将使用小平面镜作为束引导光学部件。 小平面镜具有多个独立的反射镜。 对于入射照明光的单独偏转，分离的反射镜在每种情况下都以致动器的方式连接，使得它们可以围绕至少一个倾斜轴线单独倾斜。 连接到致动器的控制装置被配置成使得可以将分离的反射镜的给定分组分组成分离的反射镜组，每个反射镜组在每种情况下包括至少两个分离的反射镜。 其结果是，当安装在投影曝光装置中时，增加了用于设置由投影曝光装置照亮的对象场的各种照明几何形状的可变性的刻面镜。 描述了用于形成小平面反射镜的分立反射镜的各种实施例。

    EUV collector with cooling device
    40.
    发明授权
    EUV collector with cooling device 有权
    EUV集电器带冷却装置

    公开(公告)号：US09007559B2

    公开(公告)日：2015-04-14

    申请号：US13214470

    申请日：2011-08-22

    Applicant: Michael Layh ,  Udo Dinger

    Inventor： Michael Layh ,  Udo Dinger

    IPC: G03B27/52 ,  G03B27/54 ,  G21K1/06 ,  G03F7/20

    CPC classification number: G21K1/06 ,  G03F7/70175 ,  G03F7/70891 ,  G21K2201/065 ,  G21K2201/067

    Abstract: An EUV collector for collecting and transmitting radiation from an EUV radiation source includes at least one collector mirror for reflecting an emission of the EUV radiation source, which is rotationally symmetric with respect to a central axis. The EUV collector also includes a cooling device for cooling the at least one collector mirror. The cooling device has at least one cooling element, which has a course with respect to the collector mirror, in each case, such that the projection of the course into a plane perpendicular to the central axis has a main direction, which encloses an angle of at most 20° with respect to a predetermined preferred direction. The collector transmits improved quality radiation to illuminate an object field.

    Abstract translation: 用于收集和发射来自EUV辐射源的辐射的EUV收集器包括至少一个收集器反射镜，用于反射相对于中心轴旋转对称的EUV辐射源的发射。 EUV收集器还包括用于冷却至少一个收集器反射镜的冷却装置。 冷却装置具有至少一个冷却元件，该冷却元件在每种情况下具有相对于收集器反射镜的过程，使得该过程的投影垂直于中心轴线的平面具有主方向，该主方向包围 相对于预定的优选方向为至多20°。 收集器传输改进的质量辐射以照亮物体场。

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