摘要:
Methods for forming a predetermined pattern of catalytic regions having nanoscale dimensions are provided for use in the growth of nanowires. The methods include one or more nanoimprinting steps to produce arrays of catalytic nanoislands or nanoscale regions of catalytic material circumscribed by noncatalytic material.
摘要:
A method, system, and computer-readable medium for emulating a converged network are provided. A media gateway receives a call at a first interface of a first network type. The call is processed for distribution on a second network type. The processed call is transmitted to a second interface of a second network type. A service module of the media gateway receives the processed call.
摘要:
Embodiments of the present invention are directed to methods for fabricating microscale-to-nanoscale interfaces. In numerous embodiments of the present invention, hybrid microscale/nanoscale crossbar multiplexers/demultiplexers provide for selection and control of individual nanowires through a set of microscale signal lines. In order to overcome the difficulty of aligning nanowires with submicroscale and microscale signal lines, at least a portion of the interconnections between nanowires and sub-microscale or microscale signal lines are randomly generated by one of various connection-fabrication methods. Addresses for individual nanowires, or groups of nanowires, can be discovered by testing the microscale-to-nanoscale interfaces.
摘要:
A synthesis method of alanyl-glutamine includes the steps of: The N-terminal protected alanine reacts with triphenylphosphine and hexachloroethane in organic solvent to form active ester, the active ester reacts with glutamine in a solution mixture containing organic solvent and aqueous solution of inorganic base, the resultant mixture is acidified with inorganic acid, and then the N-terminal protecting group is removed. In this method, the raw materials are cheap, the synthesis technique is simple, no disposals of separation and purification are needed, the product is easy to be separated and purified, the toxicities of all the reagents used in the course of production are minimal, it is advantageous to environment protection.
摘要:
A method is provided for imprinting a pattern having nanoscale features from a mold into the patternable layer on a substrate. The method comprises: providing the mold; forming the patternable layer on the substrate; and imprinting the mold into the patternable layer, wherein the patternable layer comprises a metal or alloy having a transition temperature from its solid form to its liquid form that is within a range of at least 10° above room temperature.
摘要:
A tool handle self-contained a set of head tips comprises a handle main body, a set of head tips, a fixing seat and a stop member. The handle main body has on its bottom a fixing hole, and has a receiving groove on a lateral side thereof. The head-tip set includes a base, a protruding column raised from the base and some holding areas on the base; the protruding column has on its upper end a stepped portion; the holding areas each holds and fixes a head tip; when the head-tip set assembled with the receiving groove, the bottom of the base is flush with a lateral side of the handle main body, and the top surface of the protruding column forms at a hole of the receiving groove a pressing area for pressing to push out the head-tip set. A head tip can be fixed on the bottom of handle main body for use as a screwdriver. The fixing seat is fixed in the engaging socket on the bottom of the handle main body; the stop member can be extended through the slot to make firm of the connecting of the fixing seat with the handle main body and a head tip with the fixing hole.
摘要:
Molecular-doped devices, including transistors and sensors, for nano-scale applications are provided. The device comprises a substrate, a source and a drain, both supported on the substrate and separated by a distance. The molecular-doped device further comprises a layer or wire of a semiconductor material formed on the substrate between the source and drain and a layer of a molecular-doped polymer formed on the semiconductor layer.
摘要:
Various nanoscale logic gates are disclosed. An alternating current (“AC”) source is superimposed on a direct-current (“DC”), largely resistor-based nanoscale logic circuit in order to provide distinguishable, AC current or voltage logical output signals despite potentially narrow DC-voltage or DC-current ranges produced by the resistor-based nanoscale logic circuit. AC-enhanced AND, OR, NAND, and NOR nanoscale logic gates are provided as four specific embodiments of the present invention.
摘要:
An electromagnetic coaxial driving injection apparatus, having a linear motor for driving injection and a rotation motor for metering. The linear motor and the rotation motor of both the injection and metering motors and an injection screw are set on a common axis. A connecting device connects moving parts of the motors with the injection screw. Stationary parts of the motors are fastened on a frame and forward-backward moving unit, not moving during injection and metering. Due to the arrangement of the moving parts and the injection screw on a single axis, moving parts are lessened, and transmission losses are minimized. Since the number of structural parts is low, only the moving parts of the motors move during injection while the stationary parts thereof remain at rest, thus greatly reducing inertia. Furthermore, since the moving axis of the injection screw and the injection screw are linked, without being connected with stators or other structural parts, injection is performed with minimal friction, enhancing effectiveness of the apparatus.The main characteristic of the present invention is that, due to direct driving of injection without mechanical transmission, the effects of hysteresis and backlash are avoided. Furthermore, inertia and friction are reduced. The present invention increases the response and reappearance of the system.
摘要:
A method for forming first and second linear structures of a first composition that meet at right angles, there being a gap at the point at which the structures meet. The linear structures are constructed on an etchable crystalline layer having the first composition. First and second self-aligned nanowires of a second composition are grown on this layer and used as masks for etching the layer. The self-aligned nanowires are constructed from a material that has an asymmetric lattice mismatch with respect to the crystalline layer. The gap is sufficiently small to allow one of the structures to act as the gate of a transistor and the other to form the source and drain of the transistor. The gap can be filled with electrically switchable materials thereby converting the transistor to a memory cell.