公开(公告)号：US20120178264A1

公开(公告)日：2012-07-12

申请号：US13332691

申请日：2011-12-21

Applicant: Hiroki MURAKAMI ,  Yosuke WATANABE ,  Kazuhide HASEBE

Inventor： Hiroki MURAKAMI ,  Yosuke WATANABE ,  Kazuhide HASEBE

IPC: H01L21/31 ,  C23C16/455

CPC classification number: C23C16/345 ,  C23C16/45525

Abstract: A method of forming a silicon nitride film on the surface of an object to be processed, the method including forming a seed layer functioning as a seed of the silicon nitride film on the surface of the object to be processed by using at least an aminosilane-based gas, prior to forming the silicon nitride film on the surface of the object to be processed.

Abstract translation: 一种在待处理物体的表面上形成氮化硅膜的方法，该方法包括通过使用至少一种氨基硅烷化合物形成在待加工物体的表面上起氮化硅膜的晶种的种子层的作用， 在将待加工物体的表面上形成氮化硅膜之前。

公开(公告)号：US07897488B2

公开(公告)日：2011-03-01

申请号：US12468556

申请日：2009-05-19

Applicant: Yosuke Watanabe ,  Ryugo Oba ,  Masaru Nakamura

Inventor： Yosuke Watanabe ,  Ryugo Oba ,  Masaru Nakamura

IPC: H01L21/00

CPC classification number: H01L21/78 ,  B23K26/364 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/172 ,  B23K2103/50

Abstract: A wafer dividing method for dividing a wafer having a film on the front side thereof. The wafer dividing method includes a modified layer forming step of applying a laser beam having a transmission wavelength to the substrate of the wafer from the front side thereof along the streets so that a focal point of the laser beam is set inside the substrate, thereby forming a modified layer in the substrate along each street, a film dividing step of applying a laser beam having an absorption wavelength to the film from the front side of the wafer along each street to thereby form a laser processed groove for dividing the film along each street, a back grinding step of grinding the back side of the substrate of the wafer to thereby reduce the thickness of the wafer to a predetermined thickness, a wafer supporting step of attaching the wafer to a dicing tape supported to an annular frame, and a wafer breaking step of applying an external force to the wafer by expanding the dicing tape to thereby break the wafer along each street.

Abstract translation: 一种用于在其前侧分割具有膜的晶片的晶片分割方法。 晶片分割方法包括：修改层形成步骤，其沿着街道从其前侧向晶片的基板施加具有透射波长的激光束，使得激光束的焦点设置在基板内部，从而形成 沿着每个街道的基板中的改性层，膜分离步骤，沿着每条街道从晶片的前侧向膜施加具有吸收波长的激光束，从而形成用于沿着每条街道分割膜的激光加工槽 ，后磨削步骤，研磨晶片的基板的背面，从而将晶片的厚度减小到预定厚度;晶片支撑步骤，将晶片附着到支撑在环形框架上的切割带;以及晶片 通过扩大切割胶带将外力施加到晶片从而沿着每个街道破裂晶片的断裂步骤。

公开(公告)号：US20090291544A1

公开(公告)日：2009-11-26

申请号：US12468317

申请日：2009-05-19

Applicant: Yosuke WATANABE

Inventor： Yosuke WATANABE

IPC: H01L21/304 ,  B23K26/08 ,  B23K26/06 ,  B23K26/36

CPC classification number: B23K26/046 ,  B23K2101/40 ,  Y10S438/94

Abstract: A wafer laser processing method for forming deteriorated layers along a plurality of streets in the inside of a wafer having a device area where a plurality of areas are sectioned by the plurality of streets arranged in a lattice pattern on the front surface and devices are formed in the sectioned areas and having a peripheral excess area surrounding the device area, the surface of the device area being formed to be higher than the surface of the peripheral excess area, by applying a laser beam to the front surface of the wafer along the streets with its focal point set to the inside of the wafer, comprising a first deteriorated layer forming step for forming a deteriorated layer along the streets in the insides of the peripheral excess area and the device area by applying a laser beam to the peripheral excess area and the device area along the streets with its focal point set to the insides of the peripheral excess area and the device area from the front surface side of the wafer; and a second deteriorated layer forming step for forming a deteriorated layer along the streets in the inside of the device area by applying a laser beam to the device area along the streets with its focal point set to the inside of the device area without applying the laser beam to the peripheral excess area when the focal point of the laser beam is positioned near the front surface of the peripheral excess area.

Abstract translation: 一种晶片激光加工方法，用于沿着具有多个区域的晶片内部的多个街道形成劣化层，所述器件区域由在前表面上以格子图案排列的多个街道分段，并且器件形成在 所述切片区域具有围绕所述装置区域的周边多余区域，所述装置区域的表面形成为高于所述周边多余区域的表面，通过沿着所述街道向所述街道的前表面施加激光束， 其焦点设置在晶片的内部，包括：第一劣化层形成步骤，用于通过向周边多余区域施加激光束，沿着周边多余区域和器件区域的内部的街道形成劣化层， 沿着街道的设备区域，其焦点设置在外围多余区域的内部和从晶片的前表面侧的设备区域; 以及第二劣化层形成步骤，用于通过将激光束沿着街道施加激光束而沿着街道形成劣化层，其焦点设置在装置区域的内部，而不施加激光 当激光束的焦点位于外围多余区域的前表面附近时，将光束射向外围多余区域。

公开(公告)号：US07553777B2

公开(公告)日：2009-06-30

申请号：US11242019

申请日：2005-10-04

Applicant: Yusuke Nagai ,  Yukio Morishige ,  Yosuke Watanabe

Inventor： Yusuke Nagai ,  Yukio Morishige ,  Yosuke Watanabe

IPC: H01L21/00

CPC classification number: H01L21/268 ,  B23K26/40 ,  B23K26/53 ,  B23K2103/50 ,  B28D5/0011 ,  H01L21/78

Abstract: A silicon wafer laser processing method for forming a deteriorated layer along dividing lines formed on a silicon wafer in the inside of the silicon wafer by applying a laser beam along the dividing lines, wherein the wavelength of the laser beam is set to 1,100 to 2,000 nm.

Abstract translation: 一种硅晶片激光加工方法，其特征在于，通过沿着分割线施加激光，在形成于硅晶片内部的硅晶片上的分割线上形成劣化层，其中激光束的波长设定为1,100〜2000nm 。

公开(公告)号：US07538048B2

公开(公告)日：2009-05-26

申请号：US11808384

申请日：2007-06-08

Applicant: Satoshi Kobayashi ,  Keiji Nomaru ,  Yosuke Watanabe

Inventor： Satoshi Kobayashi ,  Keiji Nomaru ,  Yosuke Watanabe

IPC: H01L21/00

CPC classification number: B23K26/0613 ,  B23K26/0604 ,  B23K26/067 ,  B23K26/0838 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/52

Abstract: A laser beam processing machine comprising a path distribution means for distributing a pulse laser beam oscillated by pulse laser beam oscillation means to a first path and a second path alternately, and one laser beam that passes through one of the paths and is converged by one condensing lens and the other laser beam that passes through the other path and is converged by the condensing lens are applied at different focusing points which have been displaced from each other in the direction of the optical axis, alternately with a time lag between them.

Abstract translation: 一种激光束处理机，包括：路径分布装置，用于将由脉冲激光束振荡装置振荡的脉冲激光束交替地分配到第一路径和第二路径;以及一个激光束，其穿过一条路径并被一个会聚 透镜和通过另一路径并被聚光透镜会聚的另一激光束被施加在彼此沿着光轴方向相互偏移的不同聚焦点处，它们之间的时间间隔交替。

公开(公告)号：US20070243696A1

公开(公告)日：2007-10-18

申请号：US11808384

申请日：2007-06-08

Applicant: Satoshi Kobayashi ,  Keiji Nomaru ,  Yosuke Watanabe

Inventor： Satoshi Kobayashi ,  Keiji Nomaru ,  Yosuke Watanabe

IPC: H01L21/00

CPC classification number: B23K26/0613 ,  B23K26/0604 ,  B23K26/067 ,  B23K26/0838 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/52

Abstract: A laser beam processing machine comprising a path distribution means for distributing a pulse laser beam oscillated by pulse laser beam oscillation means to a first path and a second path alternately, and one laser beam that passes through one of the paths and is converged by one condensing lens and the other laser beam that passes through the other path and is converged by the condensing lens are applied at different focusing points which have been displaced from each other in the direction of the optical axis, alternately with a time lag between them.

Abstract translation: 一种激光束处理机，包括：路径分布装置，用于将由脉冲激光束振荡装置振荡的脉冲激光束交替地分配到第一路径和第二路径;以及一个激光束，其穿过一条路径并被一个会聚 透镜和通过另一路径并被聚光透镜会聚的另一激光束被施加在彼此沿着光轴方向相互偏移的不同聚焦点处，它们之间的时间间隔交替。

公开(公告)号：US20070164073A1

公开(公告)日：2007-07-19

申请号：US11650503

申请日：2007-01-08

Applicant: Yosuke Watanabe ,  Keiji Nomaru ,  Nobumori Ogoshi ,  Koichi Mitani ,  Taizo Kise ,  Kohei Matsumoto ,  Tatsuya Inaoka ,  Masaru Nakamura

Inventor： Yosuke Watanabe ,  Keiji Nomaru ,  Nobumori Ogoshi ,  Koichi Mitani ,  Taizo Kise ,  Kohei Matsumoto ,  Tatsuya Inaoka ,  Masaru Nakamura

IPC: B26F3/00 ,  B26F3/02

CPC classification number: B26F3/002 ,  B23K26/40 ,  B23K2103/50 ,  B26D7/10 ,  B28D5/0011 ,  B28D5/0052 ,  Y10T225/325

Abstract: A method of dividing, along lattice pattern-like dividing lines, a wafer which has the lattice pattern-like dividing lines and a polymer film on the front surface of a substrate and is processed to allow for division along the dividing lines, the method comprising a frame holding step for putting the wafer on the surface of an adhesive tape mounted on an annular frame; a wafer cooling step for cooling the wafer that is affixed to the surface of the adhesive tape mounted on the annular frame; and a diving step for dividing the wafer along the dividing lines by expanding the adhesive tape to which the cooled wafer is affixed.

Abstract translation: 沿着格子状分割线将具有格子状分割线的晶片和在基板的前表面上的聚合物膜分割的方法，其被处理以允许沿着分割线分割，所述方法包括 框架保持步骤，用于将晶片放置在安装在环形框架上的胶带的表面上; 用于冷却固定到安装在环形框架上的胶带的表面的晶片的晶片冷却步骤; 以及用于通过使粘附有冷却晶片的粘合带膨胀而沿着分割线分割晶片的潜水步骤。

公开(公告)号：US07096540B2

公开(公告)日：2006-08-29

申请号：US10721880

申请日：2003-11-26

Applicant: Yosuke Watanabe ,  Masatomo Mizuta ,  Mitsuru Sendouda

Inventor： Yosuke Watanabe ,  Masatomo Mizuta ,  Mitsuru Sendouda

IPC: H04M1/00 ,  H04B1/38

CPC classification number: H04M1/0212 ,  E05D3/10 ,  E05D11/1078 ,  E05Y2900/606 ,  G06F1/1616 ,  G06F1/1681 ,  Y10T16/5403 ,  Y10T16/547 ,  Y10T16/5472 ,  Y10T16/551 ,  Y10T16/557

Abstract: A fold-type cellular phone has a top unit, a bottom unit and a hinge coupling together the top unit and the bottom unit while allowing the top unit to turn and swivel with respect to the bottom unit. The top unit is first unfolded from a first folded position to an attitude angle of 160 to 170 degrees, and swiveled by 180 degrees to be folded onto the bottom unit in a second folded position at an attitude angle of 180 degrees. The swivel movement of the top unit causes a cam assembly to turn the top unit from the attitude angle of 160–170 degrees to an attitude angle of 180 degrees in the second folded position, thereby allowing the top unit to assume a suitable attitude with respect to the bottom unit.

Abstract translation: 折叠型蜂窝电话具有顶部单元，底部单元和联接在一起的顶部单元和底部单元的铰链，同时允许顶部单元相对于底部单元旋转和旋转。 顶部单元首先从第一折叠位置展开至160至170度的姿态角度，并以180度的姿态角度以第二折叠位置旋转180度以折叠到底部单元上。 顶部单元的旋转运动导致凸轮组件将顶部单元从160-170度的姿态角度转到第二折叠位置的180度的姿态角度，从而允许顶部单元相对于 到底部单位。

公开(公告)号：US4919926A

公开(公告)日：1990-04-24

申请号：US124082

申请日：1987-11-23

Applicant: Yosuke Watanabe ,  Yuji Kawakami ,  Koichiro Kikuchi ,  Yoshiyuki Ogawa ,  Hiroshi Sato

Inventor： Yosuke Watanabe ,  Yuji Kawakami ,  Koichiro Kikuchi ,  Yoshiyuki Ogawa ,  Hiroshi Sato

IPC: A01G13/10 ,  A01M29/00 ,  A01M29/06 ,  A01M29/08 ,  C08K5/00 ,  C09D7/12

CPC classification number: A01M29/06 ,  A01M29/10 ,  Y10S424/10 ,  Y10T428/31645 ,  Y10T428/31649

Abstract: In order to prevent an evil caused by flying insects, an insect attraction protectant containing a light shielding agent which absorbs the light ranging from 200 to 500 nm in wave length is used to coat a transparent portion of a window glass and the like.Further, the above insect attraction protectant comprises a transparent synthetic resin such as an acrylic resin, or the like.The light shielding agent comprises an ultraviolet ray absorbent, a mixture of the ultraviolet ray absorbent and a dye, or a dye only.

Abstract translation: 为了防止由飞虫引起的邪恶，使用含有吸收波长为200〜500nm的光的遮光剂的昆虫吸引保护剂，以涂覆窗玻璃等的透明部分。 此外，上述昆虫吸引保护剂包括透明合成树脂如丙烯酸树脂等。 遮光剂包括紫外线吸收剂，紫外线吸收剂和染料的混合物，或仅染料。

公开(公告)号：US08753984B2

公开(公告)日：2014-06-17

申请号：US13332691

申请日：2011-12-21

Applicant: Hiroki Murakami ,  Yosuke Watanabe ,  Kazuhide Hasebe

Inventor： Hiroki Murakami ,  Yosuke Watanabe ,  Kazuhide Hasebe

IPC: H01L21/20

CPC classification number: C23C16/345 ,  C23C16/45525

Abstract: A method of forming a silicon nitride film on the surface of an object to be processed, the method including forming a seed layer functioning as a seed of the silicon nitride film on the surface of the object to be processed by using at least an aminosilane-based gas, prior to forming the silicon nitride film on the surface of the object to be processed.

Abstract translation: 一种在待处理物体的表面上形成氮化硅膜的方法，该方法包括通过使用至少一种氨基硅烷化合物形成在待加工物体的表面上起氮化硅膜的晶种的种子层的作用， 在将待加工物体的表面上形成氮化硅膜之前。