公开(公告)号：US20070217515A1

公开(公告)日：2007-09-20

申请号：US11308281

申请日：2006-03-15

Applicant: Yu-Jen Wang ,  Tian-Sheuan Chang ,  Tse-Ming Chang

Inventor： Yu-Jen Wang ,  Tian-Sheuan Chang ,  Tse-Ming Chang

IPC: H04N11/04

CPC classification number: H04N19/51 ,  H04N19/523 ,  H04N19/533

Abstract: A method for determining a search pattern for use in fractional motion estimation for video compression includes selecting a search center within a current macroblock; selecting a plurality of search points forming a half-pel search pattern surrounding the search center, and further selecting another search point at the search center; calculating a cost value for each search point according to a first cost function; and selecting a quarter-pel search pattern according to the cost values of at least two search points, the half-pel search pattern and the quarter-pel search pattern forming the search pattern. The search pattern is used in a matching process to determine a similarity of the current macroblock to a reference macroblock in a video undergoing compression.

Abstract translation: 一种用于确定用于视频压缩的分数运动估计的搜索模式的方法包括：选择当前宏块内的搜索中心; 选择形成围绕搜索中心的半像素搜索模式的多个搜索点，并且在搜索中心进一步选择另一个搜索点; 根据第一成本函数计算每个搜索点的成本值; 以及根据至少两个搜索点的成本值，形成搜索模式的半像素搜索模式和四分之一像素搜索模式来选择四分之一像素搜索模式。 在匹配处理中使用搜索模式来确定当前宏块与经历压缩的视频中的参考宏块的相似度。

公开(公告)号：US06658694B2

公开(公告)日：2003-12-09

申请号：US10104231

申请日：2002-03-22

Applicant: Yu-Jen Wang

Inventor： Yu-Jen Wang

IPC: E05F320

CPC classification number: E05F1/1223 ,  E05D11/08 ,  E05D2003/027 ,  E05F1/063 ,  E05F1/1292 ,  E05F3/20 ,  E05Y2201/638 ,  E05Y2900/132 ,  Y10T16/2771 ,  Y10T16/304 ,  Y10T16/53826 ,  Y10T16/5387 ,  Y10T16/540255

Abstract: A hinge member includes a rotatable cam element with a first cam face and a slidable cam element with a second cam face associated with the first cam face in such a manner that the second cam face moves away from the first cam face when the slidable cam element is cammed by the rotatable cam element due to an applied external force. A biasing member is connected to the slidable cam element so as to accumulate a returning force when the second cam face moves away from the first cam face and so as to urge the second cam face to move toward the first cam face when the external force ceases to be applied on the rotatable cam element.

Abstract translation: 铰链构件包括具有第一凸轮面的可旋转凸轮元件和具有与第一凸轮面相关联的第二凸轮面的可滑动凸轮元件，使得当可滑动凸轮元件的第二凸轮面移动离开第一凸轮面时 由于施加的外力，由可旋转的凸轮元件凸轮。 偏置构件连接到可滑动的凸轮元件，以便当第二凸轮面远离第一凸轮面移动时累积返回力，并且当外力停止时，推动第二凸轮面向第一凸轮面移动 施加在可旋转的凸轮元件上。

公开(公告)号：US11872411B2

公开(公告)日：2024-01-16

申请号：US17681190

申请日：2022-02-25

Applicant: Yu-Jen Wang

Inventor： Feipei Lai ,  Jason Chia-Hsien Cheng ,  Yu-Jen Wang ,  Wei-Jen Chen

IPC: A61N5/10 ,  G16H30/20 ,  G16H30/40

CPC classification number: A61N5/1067 ,  A61N5/1031 ,  G16H30/20 ,  G16H30/40

Abstract: A newly developed algorithm and software can effectively and accurately predict the collisions for the accelerator, phantom, and patient setups, and can help physicians to choose the noncolliding and optimized beam sets efficiently via offering the ideal hits of planning target volume (PTV) and constraints of organ at risks (OARs).

公开(公告)号：US08900884B2

公开(公告)日：2014-12-02

申请号：US13525502

申请日：2012-06-18

Applicant: Witold Kula ,  Ru-Ying Tong ,  Guenole Jan ,  Yu-Jen Wang

Inventor： Witold Kula ,  Ru-Ying Tong ,  Guenole Jan ,  Yu-Jen Wang

IPC: H01L21/00 ,  H01L29/82

CPC classification number: H01L43/10 ,  H01L43/08 ,  H01L43/12

Abstract: An all (111) MTJ stack is disclosed in which there are no transitions between different crystalline orientations when going from layer to layer. This is accomplished by providing strongly (111)-textured layers immediately below the MgO tunnel barrier to induce a (111) orientation therein.

Abstract translation: 公开了所有（111）MTJ堆叠，其中当从层到层不同时，不同结晶取向之间没有转变。 这通过在MgO隧道势垒正下方提供强（111） - 纹理层以在其中诱导（111）取向来实现。

公开(公告)号：US08879308B2

公开(公告)日：2014-11-04

申请号：US13550262

申请日：2012-07-16

Applicant: Shine Chung ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang ,  Hung-Sen Wang

Inventor： Shine Chung ,  Tao-Wen Chung ,  Chun-Jung Lin ,  Yu-Jen Wang ,  Hung-Sen Wang

IPC: G11C11/00 ,  G11C8/08 ,  G11C11/16

CPC classification number: G11C11/16 ,  G11C8/08 ,  G11C11/1657 ,  G11C11/1659

Abstract: A method of operating magneto-resistive random access memory (MRAM) cells includes providing an MRAM cell, which includes a magnetic tunneling junction (MTJ) device; and a selector comprising a source-drain path serially coupled to the MTJ device. The method further includes applying an overdrive voltage to a gate of the selector to turn on the selector.

Abstract translation: 操作磁阻随机存取存储器（MRAM）单元的方法包括提供包括磁隧道结（MTJ）装置的MRAM单元; 以及选择器，包括串联耦合到MTJ器件的源极 - 漏极路径。 该方法还包括将过驱动电压施加到选择器的门以接通选择器。

公开(公告)号：US08698260B2

公开(公告)日：2014-04-15

申请号：US13548859

申请日：2012-07-13

Applicant: Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

Inventor： Guenole Jan ,  Yu-Jen Wang ,  Ru-Ying Tong

IPC: H01L29/82

CPC classification number: H01L43/08 ,  H01L43/10

Abstract: A magnetic element in a spintronic device or serving as a propagation medium in a domain wall motion device is disclosed wherein first and second interfaces of a free layer with a perpendicular Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to increase thermal stability in a magnetic tunnel junction. The free layer may be a single layer or a composite and is comprised of a glassing agent that has a first concentration in a middle portion thereof and a second concentration less than the first concentration in regions near first and second interfaces. A CoFeB free layer selectively crystallizes along first and second interfaces but maintains an amorphous character in a middle region containing a glass agent providing the annealing temperature is less than the crystallization temperature of the middle region.

Abstract translation: 公开了一种自旋电子器件中的磁性元件或用作畴壁运动装置中的传播介质的磁性元件，其中分别具有垂直Hk增强层和隧道势垒的自由层的第一和第二界面产生增强的表面垂直各向异性以增加热量 磁性隧道结中的稳定性。 自由层可以是单层或复合物，并且由在中间部分具有第一浓度并且在第一和第二界面附近的区域中的第二浓度小于第一浓度的玻璃化剂组成。 CoFeB自由层选择性地沿着第一和第二界面结晶，但是在含有玻璃试剂的中间区域保持非晶形特征，提供退火温度小于中间区域的结晶温度。

公开(公告)号：US20130334629A1

公开(公告)日：2013-12-19

申请号：US13525502

申请日：2012-06-18

Applicant: Witold Kula ,  Ru-Ying Tong ,  Guenole Jan ,  Yu-Jen Wang

Inventor： Witold Kula ,  Ru-Ying Tong ,  Guenole Jan ,  Yu-Jen Wang

IPC: H01L43/10 ,  H01L43/12

CPC classification number: H01L43/10 ,  H01L43/08 ,  H01L43/12

Abstract: An all (111) MTJ stack is disclosed in which there are no transitions between different crystalline orientations when going from layer to layer. This is accomplished by providing strongly (111)-textured layers immediately below the MgO tunnel barrier to induce a (111) orientation therein.

Abstract translation: 公开了所有（111）MTJ堆叠，其中当从层到层不同时，不同结晶取向之间没有转变。 这通过在MgO隧道势垒正下方提供强（111） - 纹理层以在其中诱导（111）取向来实现。

公开(公告)号：US20130270523A1

公开(公告)日：2013-10-17

申请号：US13448557

申请日：2012-04-17

Applicant: Yu-Jen Wang ,  Witold Kula ,  Ru-Ying Tong ,  Guenole Jan

Inventor： Yu-Jen Wang ,  Witold Kula ,  Ru-Ying Tong ,  Guenole Jan

IPC: H01L43/10 ,  H01L43/12

CPC classification number: G01R33/091 ,  G11B5/3906 ,  H01F10/123 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1114 ,  Y10T428/1143

Abstract: A boron or boron containing dusting layer such as CoB or FeB is formed along one or both of top and bottom surfaces of a free layer at interfaces with a tunnel barrier layer and capping layer to improve thermal stability while maintaining other magnetic properties of a MTJ stack. Each dusting layer has a thickness from 0.2 to 20 Angstroms and may be used as deposited, or at temperatures up to 400° C. or higher, or following a subsequent anneal at 400° C. or higher. The free layer may be a single layer of CoFe, Co, CoFeB or CoFeNiB, or may include a non-magnetic insertion layer. The resulting MTJ is suitable for STT-MRAM memory elements or spintronic devices. Perpendicular magnetic anisotropy is maintained in the free layer at temperatures up to 400° C. or higher. Ku enhancement is achieved and the retention time of a memory cell for STT-MRAM designs is increased.

Abstract translation: 在具有隧道势垒层和封盖层的界面处，在自由层的顶表面和底表面中的一个或两个上形成含硼或含硼的除尘层，以改善热稳定性，同时保持MTJ堆叠的其它磁性能 。 每个除尘层的厚度为0.2至20埃，可用于沉积，或在高达400℃或更高的温度下使用，或随后在400℃或更高温度下退火。 自由层可以是CoFe，Co，CoFeB或CoFeNiB的单层，或者可以包括非磁性插入层。 所得MTJ适用于STT-MRAM存储器元件或自旋电子器件。 垂直磁各向异性在高达400℃或更高的温度下保持在自由层中。 实现了Ku增强，并且用于STT-MRAM设计的存储单元的保留时间增加。

公开(公告)号：US20130224521A1

公开(公告)日：2013-08-29

申请号：US13406972

申请日：2012-02-28

Applicant: Yu-Jen Wang ,  Witold Kula ,  Ru Ying Tong ,  Guenole Jan

Inventor： Yu-Jen Wang ,  Witold Kula ,  Ru Ying Tong ,  Guenole Jan

IPC: G11B5/66 ,  H01F41/22 ,  H01F41/14

CPC classification number: H01L43/12 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/66 ,  G11B5/84 ,  G11C11/15 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/305 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H03B15/006 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143

Abstract: Enhanced Hc and Hk in addition to higher thermal stability to 400° C. are achieved in magnetic devices by adding dusting layers on top and bottom surfaces of a spacer in a synthetic antiferromagnetic (SAF) structure to give a RL1/DL1/spacer/DL2/RL2 reference layer configuration where RL1 and RL2 layers exhibit perpendicular magnetic anisotropy (PMA), the spacer induces antiferromagnetic coupling between RL1 and RL2, and DL1 and DL2 are dusting layers that enhance PMA. RL1 and RL2 layers are selected from laminates such as (Ni/Co)n, L10 alloys, or rare earth-transition metal alloys. The reference layer may be incorporated in STT-MRAM memory elements or in spintronic devices including a spin transfer oscillator. Dusting layers and a similar SAF design may be employed in a free layer for Ku enhancement and to increase the retention time of a memory cell.

Abstract translation: 通过在合成反铁磁（SAF）结构中在间隔物的顶表面和底表面上添加除尘层，得到RL1 / DL1 /间隔物/ DL2，在磁性器件中，除了通过在400℃下的更高的热稳定性之外，增强了Hc和Hk / RL2参考层配置，其中RL1和RL2层表现出垂直的磁各向异性（PMA），间隔物引起RL1和RL2之间的反铁磁耦合，DL1和DL2是增强PMA的除尘层。 RL1和RL2层选自诸如（Ni / Co）n，L10合金或稀土 - 过渡金属合金的层压体。 参考层可以并入STT-MRAM存储元件或包括自旋转移振荡器的自旋电子器件中。 可以在用于Ku增强的自由层中使用除尘层和类似的SAF设计，并增加存储器单元的保留时间。

公开(公告)号：US08416600B2

公开(公告)日：2013-04-09

申请号：US12626092

申请日：2009-11-25

Applicant: Chun-Jung Lin ,  Yu-Jen Wang ,  Ya-Chen Kao ,  Wen-Cheng Chen ,  Ming-Te Liu

Inventor： Chun-Jung Lin ,  Yu-Jen Wang ,  Ya-Chen Kao ,  Wen-Cheng Chen ,  Ming-Te Liu

IPC: G11C11/00

CPC classification number: H01L43/08 ,  G11C11/16 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/12

Abstract: Apparatus and methods are disclosed herein for a reverse-connection STT MTJ element of a MRAM to overcome the source degeneration effect when switching the magnetization of the MTJ element from the parallel to the anti-parallel direction. A memory cell of a MRAM having a reverse-connection MTJ element includes a switching device having a source, a gate, and a drain, and a reverse-connection MTJ device having a free layer, a fixed layer, and an insulator layer interposed between the free layer and the fixed layer. The free layer of the reverse-connection MTJ device is connected to the drain of the switching device and the fixed layer is connected to a bit line (BL). The reverse-connection MTJ device applies the lower IMTJ capability of the memory cell caused by the source degeneration effect to the less stringent IMTJ(AP->P) while preserving the higher IMTJ capability for the more demanding IMTJ(P->AP).

Abstract translation: 本文公开了用于MRAM的反向连接STT MTJ元件的装置和方法，以在将MTJ元件的磁化从平行方向切换到反平行方向时克服源退化效应。 具有反向连接MTJ元件的MRAM的存储单元包括具有源极，栅极和漏极的开关器件和具有自由层，固定层和绝缘体层的反向连接MTJ器件， 自由层和固定层。 反连接MTJ器件的自由层连接到开关器件的漏极，固定层连接到位线（BL）。 反向连接MTJ设备将由源退化效应引起的存储器单元的较低IMTJ能力应用于较不严格的IMTJ（AP-> P），同时为更苛刻的IMTJ（P-> AP）保持较高的IMTJ能力。