公开(公告)号：US20210193438A1

公开(公告)日：2021-06-24

申请号：US17127838

申请日：2020-12-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Leonid DORF ,  Rajinder DHINDSA ,  Olivier LUERE ,  Evgeny KAMENETSKIY

IPC: H01J37/32 ,  H05H1/46

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, an apparatus can be a controller for a high peak power radio frequency (RF) generator. The controller comprises a control logic circuit in operable communication with an RF generator operating in a burst mode, the control logic circuit configured to receive a power, P, request at a predetermined duty cycle, δ, from a plasma processing chamber, determine a peak maximum power, Ppeakmax, based on a maximum average power, Pavgmax, and a maximum absolute power, Pabsmax, of the RF generator and the predetermined duty cycle, and transmit a control signal to the RF generator to limit a peak power, Ppeak, to the plasma processing chamber based on the Ppeakmax.

公开(公告)号：US20200234923A1

公开(公告)日：2020-07-23

申请号：US16790143

申请日：2020-02-13

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Evgeny KAMENETSKIY ,  James ROGERS ,  Olivier LUERE ,  Rajinder DHINDSA ,  Viacheslav PLOTNIKOV

IPC: H01J37/32 ,  H01L21/311

Abstract: Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

公开(公告)号：US20200152425A1

公开(公告)日：2020-05-14

申请号：US16189451

申请日：2018-11-13

Applicant: Applied Materials, Inc.

Inventor： Vahid FIROUZDOR ,  Imad YOUSIF ,  Steven E. BABAYAN ,  Rajinder DHINDSA ,  Changhun LEE ,  Khoi DOAN ,  John Anthony O'MALLEY, III

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67 ,  H01L21/687

Abstract: Embodiments disclosed herein relate to a substrate processing chamber component assembly with plasma resistant seal. In one embodiment, the semiconductor processing chamber component assembly includes a first semiconductor processing chamber component, a second semiconductor processing component, and a sealing member. The sealing member has a body formed substantially from polytetrafluoroethylene (PTFE). The sealing member provides a seal between the first and second semiconductor processing chamber components. The body includes a first surface, a second surface, a first sealing surface, and a second sealing surface. The first surface is configured for exposure to a plasma processing region. The second surface is opposite the first surface. The first sealing surface and the second sealing surface extend between the first surface and the second surface. The first sealing surface contacts the first semiconductor processing chamber component. The second sealing surface contacts the second semiconductor processing chamber component.

公开(公告)号：US20180315583A1

公开(公告)日：2018-11-01

申请号：US16026853

申请日：2018-07-03

Applicant: Applied Materials, Inc.

Inventor： Olivier LUERE ,  Leonid DORF ,  Rajinder DHINDSA ,  Sunil SRINIVASAN ,  Denis M. KOOSAU ,  James ROGERS

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32513 ,  H01J37/32522 ,  H01J2237/006 ,  H01J2237/334

Abstract: Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes an edge ring having a top surface and a bottom surface. An adjustable tuning ring is positioned beneath the bottom surface of the edge ring. The adjustable tuning ring has an upper surface and a lower surface. The lower surface is configured to interface with an actuating mechanism configured to move the adjustable tuning ring relative to the edge ring.

公开(公告)号：US20180233334A1

公开(公告)日：2018-08-16

申请号：US15951540

申请日：2018-04-12

Applicant: Applied Materials, Inc.

Inventor： Olivier LUERE ,  Leonid DORF ,  Rajinder DHINDSA ,  Sunil SRINIVASAN ,  Denis M. KOOSAU ,  James ROGERS

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32513 ,  H01J37/32522 ,  H01J2237/006 ,  H01J2237/334

Abstract: Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes a first ring having a top surface and a bottom surface, an adjustable tuning ring having a top surface and a bottom surface, and an actuating mechanism. The bottom surface is supported by a substrate support member. The bottom surface at least partially extends beneath a substrate supported by the substrate support member. The adjustable tuning ring is positioned beneath the first ring. The top surface of the adjustable tuning ring and the first ring define an adjustable gap. The actuating mechanism is interfaced with the bottom surface of the adjustable tuning ring. The actuating mechanism is configured to alter the adjustable gap defined between the bottom surface of the first ring and the top surface of the adjustable tuning ring.

公开(公告)号：US20180061618A1

公开(公告)日：2018-03-01

申请号：US15684230

申请日：2017-08-23

Applicant: Applied Materials, Inc.

Inventor： Michael Thomas NICHOLS ,  Imad YOUSIF ,  John Anthony O'MALLEY, III ,  Rajinder DHINDSA ,  Steven E. BABAYAN

IPC: H01J37/32

CPC classification number: H01J37/32807 ,  H01J37/321 ,  H01J37/32449 ,  H01J37/32633 ,  H01J37/32715

Abstract: Embodiments of the present disclosure relate to a plasma screen used in a plasma processing chamber with improved flow conductance and uniformity. One embodiment provides a plasma screen. The plasma screen includes a circular plate having a center opening and an outer diameter. A plurality of cut outs formed through the circular plate. The plurality of cut outs are arranged in two or more concentric circles. Each concentric circle includes equal number of cut outs.

公开(公告)号：US20180019104A1

公开(公告)日：2018-01-18

申请号：US15244718

申请日：2016-08-23

Applicant: Applied Materials, Inc.

Inventor： Vahid FIROUZDOR ,  Imad YOUSIF ,  Steven E. BABAYAN ,  Rajinder DHINDSA ,  Changhun LEE ,  Khoi DOAN ,  Anthony O'MALLEY

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01J37/32495 ,  H01J37/3211 ,  H01J37/32513 ,  H01J37/32697 ,  H01J37/32724 ,  H01J2237/166 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67126 ,  H01L21/6831 ,  H01L21/6833 ,  H01L21/68735

Abstract: Embodiments disclosed herein relate to a substrate processing chamber component assembly with plasma resistant seal. In one embodiment, the semiconductor processing chamber component assembly includes a first semiconductor processing chamber component, a second semiconductor processing component, and a sealing member. The sealing member has a body formed substantially from polytetrafluoroethylene (PTFE). The sealing member provides a seal between the first and second semiconductor processing chamber components. The body includes a first surface, a second surface, a first sealing surface, and a second sealing surface. The first surface is configured for exposure to a plasma processing region. The second surface is opposite the first surface. The first sealing surface and the second sealing surface extend between the first surface and the second surface. The first sealing surface contacts the first semiconductor processing chamber component. The second sealing surface contacts the second semiconductor processing chamber component.

公开(公告)号：US20170256435A1

公开(公告)日：2017-09-07

申请号：US15436936

申请日：2017-02-20

Applicant: Applied Materials, Inc.

Inventor： Olivier JOUBERT ,  Jason A. KENNEY ,  Sunil SRINIVASAN ,  James ROGERS ,  Rajinder DHINDSA ,  Vedapuram S. ACHUTHARAMAN ,  Olivier LUERE

IPC: H01L21/687 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01L21/68735 ,  H01J37/32082 ,  H01J37/32623 ,  H01J37/32642 ,  H01J37/32715 ,  H01J2237/3321 ,  H01J2237/334 ,  H01L21/6833

Abstract: The implementations described herein generally relate to a process kit suitable for use in a semiconductor process chamber, which reduces edge effects and widens the processing window with a single edge ring as compared to conventional process kits. The process kit generally includes an edge ring disposed adjacent to and surrounding a perimeter of a semiconductor substrate in a plasma chamber. A dimension of a gap between the substrate and the edge ring is less than about 1000 μm, and a height difference between the substrate and the edge ring is less than about (+/−) 300 μm. The resistivity of the ring is less than about 50 Ohm-cm.

公开(公告)号：US20170213758A1

公开(公告)日：2017-07-27

申请号：US15399809

申请日：2017-01-06

Applicant: Applied Materials, Inc.

Inventor： Michael R. RICE ,  Yogananda SARODE VISHWANATH ,  Sunil SRINIVASAN ,  Rajinder DHINDSA ,  Steven E. BABAYAN ,  Olivier LUERE ,  Denis M. KOOSAU ,  Imad YOUSIF

IPC: H01L21/687 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01L21/68735 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/6831 ,  H01L21/68742

Abstract: Apparatuses including a height-adjustable edge ring, and methods for use thereof are described herein. In one example, a substrate support assembly includes a height-adjustable edge ring, and the substrate support assembly is located within a process chamber. The substrate support assembly includes an electrostatic chuck, an edge ring positioned on a portion of the electrostatic chuck, and one or more actuators to adjust the height of the edge ring via one or more push pins. The height-adjustable edge ring can be used to compensate for erosion of the edge ring over time. In addition, the height-adjustable edge ring can be removed from the process chamber via a slit valve opening without venting and opening the process chamber. The height-adjustable edge ring can be tilted by the one or more actuators in order to improve azimuthal uniformity at the edge of the substrate.

公开(公告)号：US20230360892A1

公开(公告)日：2023-11-09

申请号：US18356915

申请日：2023-07-21

Applicant: Applied Materials, Inc.

Inventor： James ROGERS ,  Linying CUI ,  Rajinder DHINDSA

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  H01L21/3065

CPC classification number: H01J37/32642 ,  H01L21/67069 ,  H01L21/6833 ,  H01L21/68721 ,  H01L21/3065 ,  H01J37/32724 ,  H01L21/67103 ,  H01J2237/2001

Abstract: Embodiments described herein provide methods and apparatus used to control a processing result profile proximate to a circumferential edge of a substrate during the plasma-assisted processing thereof. In one embodiment, a substrate support assembly features a first base plate and a second base plate circumscribing the first base plate. The first and second base plates each have one or more respective first and second cooling disposed therein. The substrate support assembly further features a substrate support disposed on and thermally coupled to the first base plate, and a biasing ring disposed on and thermally coupled to the second base plate. Here, the substrate support and the biasing ring are each formed of a dielectric material. The substrate support assembly further includes an edge ring biasing electrode embedded in the dielectric material of the biasing ring and an edge ring disposed on the biasing ring.