公开(公告)号：US09228259B2

公开(公告)日：2016-01-05

申请号：US14166462

申请日：2014-01-28

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Eric James Shero ,  Fred Alokozai ,  Dong Li ,  Jereld Lee Winkler ,  Xichong Chen

IPC: C23C16/08 ,  C23C16/18 ,  C23C16/44 ,  C23F1/00 ,  C23F1/08 ,  H01L21/3213

CPC classification number: C23C16/4405 ,  C23C16/4404 ,  C23F1/00 ,  C23F1/08 ,  H01L21/32135 ,  H01L21/32136

Abstract: A method for treating a deposition reactor is disclosed. The method removes or mitigates formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

Abstract translation: 公开了一种处理沉积反应器的方法。 该方法去除或减轻用于沉积掺杂金属膜的气相反应器中的残余物的形成，例如掺杂铝的碳化钛膜或掺铝的碳化钽膜。 该方法包括将反应室暴露于缓和形成残留物形成物质的处理反应物的步骤。

公开(公告)号：US20150184291A1

公开(公告)日：2015-07-02

申请号：US14659152

申请日：2015-03-16

Applicant: ASM IP Holding B.V.

Inventor： Fred Alokozai ,  Robert Brennan Milligan

IPC: C23C16/452 ,  H01L21/285 ,  H01L21/02

CPC classification number: C23C16/505 ,  C23C16/452 ,  C23C16/45563 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J2237/3321 ,  H01L21/02274 ,  H01L21/0262 ,  H01L21/28556 ,  Y10T137/6851

Abstract: Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.

Abstract translation: 公开了与用于处理半导体衬底的硬件和方法相关的实施例。 一个示例性膜沉积反应器包括处理气体分配器，其包括等离子体气体进料入口，该等离子体气体进料入口定位成将等离子体气体供应到膜沉积反应器内的等离子体产生区域;以及前体气体进料入口，其位于将等离子体产生 地区; 绝缘限制容器，其被配置为将所述膜沉积反应器内的等离子体产生区域保持在较低的压力;以及电感耦合等离子体（ICP）线圈，其布置在所述绝缘限制容器的侧壁的一部分周围并且被定位成使得所述侧壁将 来自ICP线圈的等离子体产生区域; 以及基座，被配置为支撑半导体衬底，使得半导体衬底的膜沉积表面暴露于形成在处理气体分配器下游的反应区域。

公开(公告)号：US09029253B2

公开(公告)日：2015-05-12

申请号：US13874708

申请日：2013-05-01

Applicant: ASM IP Holding B.V.

Inventor： Robert Brennan Milligan ,  Fred Alokozai

IPC: H01L21/20 ,  H01L29/49 ,  H01L29/40 ,  H01L21/28 ,  H01L21/44 ,  H01L29/51 ,  H01L21/67

CPC classification number: H01L29/4908 ,  H01L21/28088 ,  H01L21/67167 ,  H01L21/67253 ,  H01L29/401 ,  H01L29/4966 ,  H01L29/517

Abstract: Nitrogen-containing phase-stabilized films, methods of forming phase-stabilized films, and structures and devices including the phase-stabilized films are disclosed. The phase-stabilized films include a matrix material and a phase stabilizer, which provides a morphologically stabilizing effect to a matrix material within the films. The phase-stabilized films may be used as, for example, gate electrodes and similar films in microelectronic devices.

Abstract translation: 公开了含氮相稳定膜，形成相稳定膜的方法，以及包括相稳定膜的结构和器件。 相稳定膜包括基质材料和相稳定剂，其为膜内的基质材料提供形态稳定作用。 相位稳定膜可以用作例如微电子器件中的栅电极和类似膜。

公开(公告)号：US09005539B2

公开(公告)日：2015-04-14

申请号：US13677151

申请日：2012-11-14

Applicant: ASM IP Holding B.V.

Inventor： Michael Halpin ,  Eric Shero ,  Carl White ,  Fred Alokozai ,  Jerry Winkler ,  Todd Dunn

IPC: B01J19/00 ,  B01J8/00 ,  C23C16/44 ,  H01L21/67 ,  C23C16/458

CPC classification number: C23C16/4409 ,  B01J8/0035 ,  B01J19/0073 ,  C23C16/4585 ,  H01L21/67126

Abstract: A reaction chamber including an upper region for processing a substrate, a lower region for loading a substrate, a susceptor movable within the reaction chamber, a first sealing member positioned on a perimeter of the susceptor, a second sealing member positioned between the upper region and the lower region, wherein the first and second sealing members are selectively engaged with one another to limit communication between the upper region and the lower region.

Abstract translation: 一种反应室，包括用于处理基板的上部区域，用于装载基板的下部区域，可在反应室内移动的基座，位于基座周边的第一密封构件，位于上部区域和 下部区域，其中第一和第二密封构件彼此选择性地接合以限制上部区域和下部区域之间的连通。

公开(公告)号：US20130129577A1

公开(公告)日：2013-05-23

申请号：US13677151

申请日：2012-11-14

Applicant: ASM IP Holding B.V.

Inventor： Michael Halpin ,  Eric Shero ,  Carl White ,  Fred Alokozai ,  Jerry Winkler ,  Todd Dunn

IPC: B01J8/00

CPC classification number: C23C16/4409 ,  B01J8/0035 ,  B01J19/0073 ,  C23C16/4585 ,  H01L21/67126

Abstract: A reaction chamber including an upper region for processing a substrate, a lower region for loading a substrate, a susceptor movable within the reaction chamber, a first sealing member positioned on a perimeter of the susceptor, a second sealing member positioned between the upper region and the lower region, wherein the first and second sealing members are selectively engaged with one another to limit communication between the upper region and the lower region.