公开(公告)号：US06787817B2

公开(公告)日：2004-09-07

申请号：US10318244

申请日：2002-12-13

申请人： Hiroyuki Takazawa ,  Shinichiro Takatani ,  Masao Yamane ,  Masayoshi Kobayashi

发明人： Hiroyuki Takazawa ,  Shinichiro Takatani ,  Masao Yamane ,  Masayoshi Kobayashi

IPC分类号： H01L310328

CPC分类号： H01L29/66462 ,  H01L29/0657 ,  H01L29/7783

摘要： The present invention provides a semiconductor device for high frequency application having a high breakdown voltage and the method of manufacturing thereof. A region including a first conductivity type high impurity concentration semiconductor and a region including a first conductivity type low impurity concentration semiconductor are provided from an ohmic layer side at the side far from a semiconductor substrate of the end surface of a barrier layer opposite the semiconductor substrate and between the ohmic layer and a gate electrode. The sheet impurity concentration of the region including a first conductivity type low impurity concentration semiconductor is set to be lower than that between the bottom surface of the gate electrode at the side of the semiconductor substrate and the end surface of the channel layer opposite the semiconductor substrate. The sheet impurity concentration of the region including a first conductivity type high impurity concentration semiconductor is set to be higher than that of the region including a first conductivity type low impurity concentration semiconductor.

摘要翻译： 本发明提供一种具有高击穿电压的高频应用的半导体器件及其制造方法。 包括第一导电型高杂质浓度半导体的区域和包括第一导电型低杂质浓度半导体的区域从远离半导体衬底的阻挡层的端面的半导体衬底的一侧的欧姆层侧提供 并且在欧姆层和栅电极之间。 包括第一导电型低杂质浓度半导体的区域的片状杂质浓度被设定为低于半导体衬底侧的栅电极的底表面和与半导体衬底相对的沟道层的端面之间的片状杂质浓度 。 将包括第一导电型高杂质浓度半导体的区域的片状杂质浓度设定为高于包含第一导电型低杂质浓度半导体的区域的片状杂质浓度。

公开(公告)号：US06768739B1

公开(公告)日：2004-07-27

申请号：US09501279

申请日：2000-02-09

申请人： Masayoshi Kobayashi ,  Tutomu Murase ,  Hideyuki Shimonishi

发明人： Masayoshi Kobayashi ,  Tutomu Murase ,  Hideyuki Shimonishi

IPC分类号： H04L1200

CPC分类号： H04L45/00 ,  H04L45/742

摘要： A router allowing the entry hit probability of the cache to be increased is disclosed. The cache is searched using a different mask for each cache entry. A maximum or optimum cache prefix length is determined as a length of upper bits of the destination address of the received packet which are not masked by a corresponding mask. Alternatively, the cache is searched using longest prefix match (LFM). A cache entry allowing a plurality of destination addresses to be hit can be registered in the cache, resulting in increased cache hit probability.

摘要翻译： 公开了允许高速缓存的进入命中概率增加的路由器。 使用每个缓存条目的不同掩码来搜索缓存。 确定最大或最佳缓存前缀长度作为未被相应掩码掩蔽的接收到的分组的目的地地址的高位的长度。 或者，使用最长前缀匹配（LFM）搜索高速缓存。 可以将高达许可目的地地址命中的高速缓存条目登记在高速缓存中，导致缓存命中概率增加。

公开(公告)号：US06720220B2

公开(公告)日：2004-04-13

申请号：US10325915

申请日：2002-12-23

申请人： Sumito Numazawa ,  Yoshito Nakazawa ,  Masayoshi Kobayashi ,  Satoshi Kudo ,  Yasuo Imai ,  Sakae Kubo ,  Takashi Shigematsu ,  Akihiro Ohnishi ,  Kozo Uesawa ,  Kentaro Oishi

发明人： Sumito Numazawa ,  Yoshito Nakazawa ,  Masayoshi Kobayashi ,  Satoshi Kudo ,  Yasuo Imai ,  Sakae Kubo ,  Takashi Shigematsu ,  Akihiro Ohnishi ,  Kozo Uesawa ,  Kentaro Oishi

IPC分类号： H01L21336

CPC分类号： H01L21/28114 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L29/0696 ,  H01L29/0869 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/511 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7813 ,  H01L29/7827

摘要： In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.

摘要翻译： 在制造具有沟槽栅极结构的MISFET的半导体器件的方法中，从半导体层的深度方向上作为漏极区域的第一导电型半导体层的主表面形成沟槽，形成栅极 在沟槽的内表面上形成包括热氧化膜和沉积膜的绝缘膜，并且在沟槽中形成栅电极之后，将杂质引入到第一导电类型的半导体衬底中以形成半导体区域 用作沟道形成区域的第二导电类型，并且将杂质引入到第二导电类型的半导体区域中，以形成用作源极区域的第一导电类型的半导体区域。

公开(公告)号：US06310744B1

公开(公告)日：2001-10-30

申请号：US09243389

申请日：1999-02-01

申请人： Masayoshi Kobayashi ,  Tsuneyoshi Oohara

发明人： Masayoshi Kobayashi ,  Tsuneyoshi Oohara

IPC分类号： G11B5008

CPC分类号： G11B15/602 ,  G11B23/502 ,  G11B33/148

摘要： A magnetic tape apparatus for reading data from and writing data to a magnetic tape has a magnetic head for reading or writing the data, and first and second tape guides. The first tape guide has a first guide surface to guide the magnetic tape, and the first guide surface has a width that is narrower than the width of the magnetic tape. The second tape guide has a second guide surface to guide the magnetic tape, and the second guide surface has a width that is wider than the width of the magnetic tape. If the tape moves laterally against a flange on the first tape guide, the flange initially yields to the pressure of the tape. Then the flange presses against the magnetic tape to return the tape to a laterally aligned position along a tape path.

摘要翻译： 用于从磁带读取数据并将数据写入磁带的磁带装置具有用于读取或写入数据的磁头以及第一和第二磁带引导件。 第一带引导件具有引导磁带的第一引导表面，并且第一引导表面具有比磁带宽度窄的宽度。 第二带引导件具有用于引导磁带的第二引导表面，并且第二引导表面具有比磁带的宽度更宽的宽度。 如果磁带横向抵靠第一磁带引导件上的凸缘移动，则凸缘最初产生磁带的压力。 然后，凸缘压靠在磁带上，以将带返回到沿着磁带路径的横向对准的位置。

公开(公告)号：US06306190B1

公开(公告)日：2001-10-23

申请号：US09392296

申请日：1999-09-08

申请人： Yuichiro Tsuruta ,  Nobuhiro Kasai ,  Masayoshi Kobayashi

发明人： Yuichiro Tsuruta ,  Nobuhiro Kasai ,  Masayoshi Kobayashi

IPC分类号： B01D5000

CPC分类号： B01D46/0023 ,  B01D46/008 ,  B01D46/2403 ,  B01D2279/60 ,  F02B61/02 ,  F02M35/024 ,  F02M35/10222 ,  F02M35/162 ,  Y10S55/28

摘要： An air cleaning system for an engine includes a main air cleaner for supplying cleaned air to an intake system of the engine and a sub-air cleaner for supplying cleaned air to an exhaust system of the engine. The main air cleaner includes a main air cleaner housing divided into a dirty air chamber and a clean air chamber by a first air cleaning element. The sub-air cleaner is disposed in the dirty air chamber, and has its own second air cleaning element, physically separated from the first air cleaning element.

摘要翻译： 用于发动机的空气净化系统包括用于将净化空气供给到发动机的进气系统的主空气净化器和用于将净化空气供给到发动机的排气系统的副空气净化器。 主空气净化器包括通过第一空气净化元件分成脏空气室和清洁空气室的主空气净化器壳体。 副空气净化器设置在脏空气室中，并且具有其自身与第一空气净化元件物理分离的第二空气净化元件。

公开(公告)号：US5853079A

公开(公告)日：1998-12-29

申请号：US599048

申请日：1996-02-09

申请人： Tsuyoshi Ito ,  Tetsuro Ito ,  Masayoshi Kobayashi

发明人： Tsuyoshi Ito ,  Tetsuro Ito ,  Masayoshi Kobayashi

IPC分类号： H05K13/00 ,  H05K13/02 ,  B65G47/14

CPC分类号： H05K13/028 ,  H05K13/0084

摘要： A chip feed apparatus capable of permitting a chip feed casing to be used for storage and transportation of chips in a distribution channel as well and preventing a weight of chips from being applied to a chip storage space of a hopper, resulting in positive separation and feeding of chips by the hopper. The chip feed apparatus includes a chip feed casing formed on a side surface thereof with a chip outlet, a hopper formed on a side surface thereof with a chip inlet and connected to the chip feed casing while enabling vertical movement of the hopper, a chip separating and aligning pipe inserted into a hole communicating with the chip storage space, and a chip feed path of which one end communicates with the chip separating and aligning pipe and the other end is defined at a chip pick-up position. The chip outlet of the chip feed casing is open at a lowermost end of a chip receiving space or below the lowermost end. The side surface of the chip feed casing and the side surface of the hopper are connected to each other while the chip outlet and chip inlet are kept aligned with each other.

摘要翻译： 一种能够允许芯片供给壳体用于在分配通道中存储和运输芯片的芯片进给装置，并且防止芯片的重量被施加到料斗的芯片存储空间，导致正分离和进给 的碎片由料斗。 所述切屑进给装置包括在其侧面形成有切屑出口的切屑进给壳体，在其侧面形成有料斗入口并与所述切屑进给壳体连接并且能够使所述料斗垂直移动的料斗， 并且插入到与芯片存储空间连通的孔中的对准管，以及与芯片分离对准管和另一端连通的一端的芯片供给路径被限定在芯片拾取位置。 芯片进给壳体的芯片出口在芯片容纳空间的最下端或最下端开口。 芯片供给壳体的侧面和料斗的侧面彼此连接，同时芯片出口和芯片入口保持彼此对准。

公开(公告)号：US5373191A

公开(公告)日：1994-12-13

申请号：US998856

申请日：1992-12-30

申请人： Toshiyuki Usagawa ,  Yoshinori Imamura ,  Hidekazu Okuhira ,  Shigeo Goto ,  Masayoshi Kobayashi ,  Shinichiro Takatani

发明人： Toshiyuki Usagawa ,  Yoshinori Imamura ,  Hidekazu Okuhira ,  Shigeo Goto ,  Masayoshi Kobayashi ,  Shinichiro Takatani

IPC分类号： H01L21/285 ,  H01L21/331 ,  H01L21/335 ,  H01L21/337 ,  H01L21/338 ,  H01L21/60 ,  H01L21/8252 ,  H01L23/485 ,  H01L29/812 ,  H01L29/80 ,  H01L23/48 ,  H01L29/06 ,  H01L29/48

CPC分类号： H01L21/76897 ,  H01L21/28587 ,  H01L21/8252 ,  H01L23/485 ,  H01L29/66318 ,  H01L29/66462 ,  H01L29/66863 ,  H01L29/66871 ,  H01L29/66924 ,  H01L29/8128 ,  H01L2924/0002

摘要： Source and drain electrode metals of a field effect transistor having a recessed gate electrode metal are directly connected to a high impurity concentration semiconductor layer which faces the gate electrode metal through an insulator film which defines the side wall of the recess. The source and drain electrode metals may be disposed so as to face the gate electrode metal through the side insulator film. With this arrangement, it is possible to lower the parasitic resistance between the gate electrode and another electrode of the field effect transistor, to lower the contact resistance between a semiconductor layer and the source and drain electrodes, to reduce the capacitance of the recess gate electrode and to increase the source-gate breakdown voltage, advantageously. The above-described arrangement is particularly suitable for a transistor employing a compound semiconductor, and can also be applied to semiconductor devices other than field effect transistors. Such semiconductor devices can readily be produced by forming a gate electrode metal with a self-alignment process using the lift-off method.

摘要翻译： 具有凹陷栅电极金属的场效应晶体管的源电极和漏电极金属通过限定凹部的侧壁的绝缘膜直接连接到面向栅电极金属的高杂质浓度半导体层。 源电极和漏电极金属可以通过侧绝缘膜设置成面对栅电极金属。 通过这种布置，可以降低场效应晶体管的栅电极和另一电极之间的寄生电阻，以降低半导体层与源电极和漏电极之间的接触电阻，以减小凹陷栅电极的电容 并且有利地增加源极栅极击穿电压。 上述布置特别适用于采用化合物半导体的晶体管，并且还可以应用于场效应晶体管以外的半导体器件。 这种半导体器件可以容易地通过使用剥离法形成具有自对准工艺的栅电极金属来制造。

公开(公告)号：US5181087A

公开(公告)日：1993-01-19

申请号：US340471

申请日：1989-04-19

申请人： Toshiyuki Usagawa ,  Yoshinori Imamura ,  Hidekazu Okuhira ,  Shigeo Goto ,  Masayoshi Kobayashi ,  Shinichiro Takatani

发明人： Toshiyuki Usagawa ,  Yoshinori Imamura ,  Hidekazu Okuhira ,  Shigeo Goto ,  Masayoshi Kobayashi ,  Shinichiro Takatani

IPC分类号： H01L21/285 ,  H01L21/331 ,  H01L21/335 ,  H01L21/337 ,  H01L21/338 ,  H01L21/60 ,  H01L21/8252 ,  H01L23/485 ,  H01L29/812

CPC分类号： H01L21/76897 ,  H01L21/28587 ,  H01L21/8252 ,  H01L23/485 ,  H01L29/66318 ,  H01L29/66462 ,  H01L29/66863 ,  H01L29/66871 ,  H01L29/66924 ,  H01L29/8128 ,  H01L2924/0002

摘要： Source and drain electrode metals of a field effect transistor having a recessed gate electrode metal are directly connected to a high impurity concentration semiconductor layer which faces the gate electrode metal through an insulator film which defines the side wall of the recess. The source and drain electrode metals may be disposed so as to face the gate electrode metal through the side insulator film. With this arrangement, it is possible to lower the parasitic resistance between the gate electrode and another electrode of the field effect transistor, to lower the contact resistance between a semiconductor layer and the source and drain electrodes, to reduce the capacitance of the recess gate electrode and to increase the source-gate breakdown voltage, advantageously. The above-described arrangement is particularly suitable for a transistor employing a compound semiconductor, and can also be applied to semiconductor devices other than field effect transistors. Such semiconductor devices can readily be produced by forming a gate electrode metal with a self-alignment process using the lift-off method.

摘要翻译： 具有凹陷栅电极金属的场效应晶体管的源电极和漏电极金属通过限定凹部的侧壁的绝缘膜直接连接到面向栅电极金属的高杂质浓度半导体层。 源电极和漏电极金属可以通过侧绝缘膜设置成面对栅电极金属。 通过这种布置，可以降低场效应晶体管的栅电极和另一电极之间的寄生电阻，以降低半导体层与源电极和漏电极之间的接触电阻，以减小凹陷栅电极的电容 并且有利地增加源极栅极击穿电压。 上述布置特别适用于采用化合物半导体的晶体管，并且还可以应用于场效应晶体管以外的半导体器件。 这种半导体器件可以容易地通过使用剥离法形成具有自对准工艺的栅电极金属来制造。

公开(公告)号：US4397284A

公开(公告)日：1983-08-09

申请号：US221928

申请日：1981-12-31

申请人： Nobuhiro Kaibara ,  Masayoshi Kobayashi

发明人： Nobuhiro Kaibara ,  Masayoshi Kobayashi

IPC分类号： F02M41/12 ,  F02M59/20

CPC分类号： F02M41/128 ,  F02M41/123

摘要： A distribution type fuel injection pump for use in a fuel injection combustion engine comprising a plunger capable of moving reciprocally along its axis and simultaneously rotating about its axis and a couple of members forming a cam mechanism having a first cam member and a second cam member. The first cam member is mounted on the plunger and the second cam member is mounted on a housing rotatably about its axis. The couple of cam members cause the plunger to reciprocally move while the plunger is rotating. The angular position of the second cam member about its axis can be controlled by a fuel injection timing control means in accordance with the engine speed. The second cam member can also turn about its axis so as to be adjusted in its angular position by a fuel injection timing adjustment when a selected operating condition of the engine, for example the engine start, is carried out.

摘要翻译： 一种用于燃料喷射内燃机的分配式燃料喷射泵，包括一个能够沿其轴线往复运动并同时围绕其轴线旋转的柱塞，以及一对构成具有第一凸轮构件和第二凸轮构件的凸轮机构的构件。 第一凸轮构件安装在柱塞上，并且第二凸轮构件围绕其轴线可旋转地安装在壳体上。 凸轮构件的一对使柱塞在柱塞旋转时往复移动。 第二凸轮构件围绕其轴线的角度位置可以根据发动机转速由燃料喷射正时控制装置控制。 第二凸轮构件也可以围绕其轴线转动，以便当执行发动机的选定操作条件（例如发动机起动）时，通过燃料喷射正时调节将其调节到其角位置。

公开(公告)号：US4327696A

公开(公告)日：1982-05-04

申请号：US151905

申请日：1980-05-21

申请人： Masayoshi Kobayashi ,  Toru Sakuranaka ,  Keiichi Yamada

发明人： Masayoshi Kobayashi ,  Toru Sakuranaka ,  Keiichi Yamada

IPC分类号： F02M41/12 ,  F02M59/44 ,  F02M39/00 ,  F02M37/04 ,  F02M41/08

CPC分类号： F02M41/125 ,  F02M59/447

摘要： A fuel injection pump in which a relief channel is formed which communicates with the pump working chamber and is arranged to be blocked by a valve means, associated with a valve actuating means responsive to a pressure varying with engine r.p.m., during starting of the engine so that the fuel injection quantity is increased. Thus, improved starting characteristics of the engine can be obtained. Said relief channel may comprise a first channel communicating with the pump working chamber, and a second relief channel which has a portion thereof extending in the pump plunger to terminate in an outer periphery of the bottom end of said plunger and is so disposed as to communicate with the pump suction chamber after a predetermined delivery stroke length or prestroke has been executed. Communication between said first and second relief channels is adapted to be interrupted by said valve means at less than a predetermined engine r.p.m. As another advantagenous arrangement, the relief channel may comprise a first relief channel which consists of a port having one end communicating with the pump working chamber and the other end terminating in an outer periphery of the plunger and a communication channel having one end terminating in an inner periphery of the plunger barrel and the other end arranged for communication with a lower pressure zone, and a second relief channel allowing a restricted flow rate and communicating with the pump working chamber. The port and communication channel of said first relief channel are so disposed as to communicate with each other at the beginning of the delivery stroke of the plunger. Said first and second relief channels are arranged to be simultaneously blocked by said valve means during starting of the engine.

摘要翻译： 一种燃料喷射泵，其中形成有与泵工作室连通的排泄通道，并且在发动机启动期间被布置成被阀装置阻塞，该阀装置响应于随着发动机转速而变化的压力而与阀致动装置相关联 燃料喷射量增加。 因此，可以获得发动机的起动特性的改善。 所述释放通道可以包括与泵工作室连通的第一通道，以及第二释放通道，其具有在泵柱塞中延伸的部分，以终止于所述柱塞的底端的外周，并且被设置为连通 在预定的输送行程长度或前冲程已经执行之后，泵吸入室。 所述第一和第二释放通道之间的通信适于在小于预定发动机r.p.m的情况下被所述阀装置中断。 作为另一个有利的布置，排泄通道可以包括第一释放通道，该第一释​​放通道由具有一端与泵工作室连通的端口和终止于柱塞的外周边的另一端组成的端口和具有一端终止于 柱塞筒的内周，另一端设置成与较低压力区相连通，第二泄压通道允许有限流量并与泵工作室连通。 所述第一释放通道的端口和连通通道被布置为在柱塞的输送冲程开始时彼此连通。 所述第一和第二释放通道布置成在发动机启动期间同时被所述阀装置阻挡。