公开(公告)号：US06632696B2

公开(公告)日：2003-10-14

申请号：US09745657

申请日：2000-12-20

申请人： Shigeru Kimura ,  Takahiko Watanabe ,  Tae Yoshikawa ,  Hiroyuki Uchida ,  Shusaku Kido ,  Shinichi Nakata ,  Tsutomu Hamada ,  Hisanobu Shimodouzono ,  Satoshi Doi ,  Toshihiko Harano ,  Akitoshi Maeda ,  Satoshi Ihida ,  Hiroaki Tanaka ,  Takasuke Hayase ,  Shouichi Kuroha ,  Hirofumi Ihara ,  Kazushige Takechi

发明人： Shigeru Kimura ,  Takahiko Watanabe ,  Tae Yoshikawa ,  Hiroyuki Uchida ,  Shusaku Kido ,  Shinichi Nakata ,  Tsutomu Hamada ,  Hisanobu Shimodouzono ,  Satoshi Doi ,  Toshihiko Harano ,  Akitoshi Maeda ,  Satoshi Ihida ,  Hiroaki Tanaka ,  Takasuke Hayase ,  Shouichi Kuroha ,  Hirofumi Ihara ,  Kazushige Takechi

IPC分类号： H01L2100

CPC分类号： G02F1/134363

摘要： An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and n+ amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the n+ amorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.

摘要翻译： 使用四个光刻制造步骤以高产率制造具有优异性能的有源矩阵基板。 在步骤 1 中，扫描线和从扫描线延伸的栅电极形成在玻璃板中。 在步骤 2 中，将由非晶硅层和n 非晶硅层组成的栅极绝缘层和半导体层层压到 提供TFT部分的半导体层。 在步骤 3 中，层叠透明导电层和金属层，信号线，从信号线延伸的漏电极，像素电极和源电极延伸 形成像素电极，并且通过蚀刻去除通道间隙的n 非晶硅层。 在步骤 4 中，形成保护绝缘层，通过蚀刻去除保护绝缘层和像素电极上方的金属层。

公开(公告)号：US06515730B1

公开(公告)日：2003-02-04

申请号：US09924766

申请日：2001-08-09

申请人： Akitoshi Maeda

发明人： Akitoshi Maeda

IPC分类号： G02F113

CPC分类号： G02F1/1345

摘要： A simple method for preventing oxidization of an aluminum surface of terminal electrode, increase of pressure contact resistance, unstability and reduction of connection reliability is provided. In a terminal electrode part on a reactive matrix substrate, for being connected to an external drive circuit, connecting electrodes are formed by using aluminum or an aluminum alloy, at least their surfaces connected to TCP are covered with an insulating film of aluminum oxide or consisting of a laminate film of aluminum oxide aluminum hydroxide, and the insulating film is selectively removed in a step subsequent to the final step in a cell formation process. In this way, adverse effects of the heat treatment processes such as the annealing in the array formation process and the orientation film sintering of the cell formation process and the oxidization of the connecting electrode surface in the washing.

摘要翻译： 提供了一种防止端子电极的铝表面氧化的简单方法，增加了耐压接触性，不稳定性和连接可靠性的降低。 在反应性基质基板上的端子电极部分中，为了连接到外部驱动电路，通过使用铝或铝合金形成连接电极，至少其连接到TCP的表面被氧化铝的绝缘膜覆盖，或者由 的氧化铝氢氧化铝的层压膜，并且在细胞形成过程中的最终步骤之后的步骤中选择性地除去绝缘膜。 以这种方式，诸如阵列形成过程中的退火和细胞形成过程的取向膜烧结以及洗涤中连接电极表面的氧化的热处理过程的不利影响。

公开(公告)号：US06452648B2

公开(公告)日：2002-09-17

申请号：US09924767

申请日：2001-08-09

申请人： Akitoshi Maeda

发明人： Akitoshi Maeda

IPC分类号： G02F1136

CPC分类号： G02F1/1345

摘要： A simple method for preventing oxidization of an aluminum surface of terminal electrode, increase of pressure contact resistance, unstability and reduction of connection reliability is provided. In a terminal electrode part on a reactive matrix substrate, for being connected to an external drive circuit, connecting electrodes are formed by using aluminum or an aluminum alloy, at least their surfaces connected to TCP are covered with an insulating film of aluminum oxide or consisting of a laminate film of aluminum oxide aluminum hydroxide, and the insulating film is selectively removed in a step subsequent to the final step in a cell formation process. In this way, adverse effects of the heat treatment processes such as the annealing in the array formation process and the orientation film sintering of the cell formation process and the oxidization of the connecting electrode surface in the washing.

公开(公告)号：US06259495B1

公开(公告)日：2001-07-10

申请号：US09233961

申请日：1999-01-20

申请人： Akitoshi Maeda

发明人： Akitoshi Maeda

IPC分类号： G02F1136

CPC分类号： G02F1/1345

摘要： A simple method for preventing oxidization of an aluminum surface of terminal electrode, increase of pressure contact resistance, unstability and reduction of connection reliability is provided. In a terminal electrode part on a reactive matrix substrate, for being connected to an external drive circuit, connecting electrodes are formed by using aluminum or an aluminum alloy, at least their surfaces connected to TCP are covered with an insulating film of aluminum oxide or consisting of a laminate film of aluminum oxide aluminum hydroxide, and the insulating film is selectively removed in a step subsequent to the final step in a cell formation process. In this way, adverse effects of the heat treatment processes such as the annealing in the array formation process and the orientation film sintering of the cell formation process and the oxidization of the connecting electrode surface in the washing.

摘要翻译： 提供了一种防止端子电极的铝表面氧化的简单方法，增加了耐压接触性，不稳定性和连接可靠性的降低。 在反应性基质基板上的端子电极部分中，为了连接到外部驱动电路，通过使用铝或铝合金形成连接电极，至少其连接到TCP的表面被氧化铝的绝缘膜覆盖，或者由 的氧化铝氢氧化铝的层压膜，并且在细胞形成过程中的最终步骤之后的步骤中选择性地除去绝缘膜。 以这种方式，诸如阵列形成过程中的退火和细胞形成过程的取向膜烧结以及洗涤中连接电极表面的氧化的热处理过程的不利影响。

公开(公告)号：US6093268A

公开(公告)日：2000-07-25

申请号：US632418

申请日：1996-04-24

申请人： Kiyoshi Hirakawa ,  Akitoshi Maeda ,  Hiroaki Sugiyama ,  Manabu Ohhori

发明人： Kiyoshi Hirakawa ,  Akitoshi Maeda ,  Hiroaki Sugiyama ,  Manabu Ohhori

IPC分类号： C21D1/26 ,  C21D1/30 ,  C21D1/40 ,  C21D1/42 ,  C21D1/673 ,  C21D9/40 ,  C21D9/00

CPC分类号： C21D1/30 ,  C21D1/26 ,  C21D1/42 ,  C21D9/40 ,  F16C33/30 ,  C21D1/40 ,  C21D1/673 ,  Y02P10/253 ,  Y10S148/906

摘要： In a corrective tempering method and apparatus for a rolling element in which the thermal deformation of the rolling element is corrected within an extremely short time by utilizing plasticity exhibited during a metallic structure transforming process brought about by low-temperature tempering of the rolling element made of steel, the hardened rolling element is heated and pressured to a maximum temperature within a range of from 250 to 500.degree. C. by a heating device while set in correcting molds to correct the deformation of the rolling element at a degree of working within a range not exceeding an elastic deformation range of the rolling element at a room temperature. The rolling element can be heated also by an induction heating device in addition to a conduction heating device. A product whose inner/outer diameter correcting degree of deformation is 60% or more, dimension standardizing rate is 30% or more, surface roughness is less than Ra 0.2 .mu.m, and surface hardness is HRC 56 or more can be obtained for a correction time within 6 minutes and an induction heating time within 30 seconds.

摘要翻译： PCT No.PCT / JP95 / 01662 Sec。 371日期：1996年4月24日 102（e）日期1996年4月24日PCT提交1995年8月23日PCT公布。 公开号WO96 / 06194 日本特开1996年2月29日，日本特开2002-1259号公报所述的一种用于滚动元件的矫正回火方法和装置，其中通过利用由低温回火引起的金属结构变形过程中所呈现的可塑性，在极短的时间内对滚动元件的热变形进行校正 由钢制的滚动元件，通过加热装置将硬化的滚动元件加热并加压到250-500℃的最高温度，同时设置在校正模具中以校正滚动元件的变形程度 在不超过滚动体的弹性变形范围的范围内在室温下工作。 除了传导加热装置之外，滚动体也可以通过感应加热装置加热。 其内/外径矫正度为60％以上，尺寸标准化率为30％以上，表面粗糙度小于Ra0.2μm的产品，并且可以获得表面硬度为HRC 56以上的校正 时间在6分钟内，感应加热时间在30秒以内。

公开(公告)号：US5316975A

公开(公告)日：1994-05-31

申请号：US823163

申请日：1992-01-21

申请人： Akitoshi Maeda

发明人： Akitoshi Maeda

IPC分类号： H01R4/26 ,  H01L21/768 ,  H01R13/22 ,  H01R33/76 ,  H01L21/441 ,  H01L21/465

CPC分类号： H01L21/76877 ,  Y10S148/05 ,  Y10S438/902 ,  Y10S438/906

摘要： A method is disclosed for producing integrated circuit apparatus in which electroconductive interconnection films are disposed adjacent to each other and have an insulating film sandwiched therebetween. The electroconductive films are electrically connected with each other via a through-hole formed in the insulating film. First, a through-hole is formed in an insulating film so as to extend to the surface of a first electroconductive interconnection film. Then, extraneous materials existing on the surfaces of the insulating film and the electroconductive film exposed in the through-hole are removed by a sputter etching method. Next, an insulating film covering film ("covering film") is formed by a sputtering method on said insulating film by using a material which is the same material that is used for forming a second electroconductive interconnection film. Subsequently, the sputter etching method is used again to remove the covering film. Finally, the second electroconductive interconnection film is formed on the insulating film and makes electrical contact with the first electroconductive film via the through-hole.

摘要翻译： 公开了一种用于制造集成电路装置的方法，其中导电互连膜彼此相邻设置并且夹在其间的绝缘膜。 导电膜通过形成在绝缘膜中的通孔彼此电连接。 首先，在绝缘膜中形成通孔，以延伸到第一导电互连膜的表面。 然后，通过溅射蚀刻方法除去存在于绝缘膜表面上的外部材料和暴露在通孔中的导电膜。 接下来，通过使用与用于形成第二导电互连膜的材料相同的材料，通过溅射法在所述绝缘膜上形成绝缘膜覆盖膜（“覆盖膜”）。 随后，再次使用溅射蚀刻方法去除覆盖膜。 最后，第二导电互连膜形成在绝缘膜上，并经由通孔与第一导电膜电接触。

公开(公告)号：US07663146B2

公开(公告)日：2010-02-16

申请号：US10028778

申请日：2001-12-28

申请人： Hiroaki Tanaka ,  Akira Fujita ,  Shigeru Kimura ,  Akitoshi Maeda ,  Takasuke Hayase

发明人： Hiroaki Tanaka ,  Akira Fujita ,  Shigeru Kimura ,  Akitoshi Maeda ,  Takasuke Hayase

IPC分类号： G02F1/1343

CPC分类号： H01L29/4908 ,  G02F1/13458 ,  G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L29/458

摘要： An active matrix addressing LCD device having an active matrix substrate on which conductive lines are formed is provided, which suppress the AI hillock without complicating the structure of the lines and which decreases the electrical connection resistance increase at the terminals of the lines, thereby improving the connection reliability. The device comprises an active matrix substrate having a transparent, dielectric plate, thin-film transistors (TFTs) arranged on the plate, and pixel electrodes arranged on the plate. Gate electrodes of the TFTs and scan lines have a first multilevel conductive structure. Common electrodes and common lines may have the first multilevel conductive structure. Source and drain electrodes of the TFTs and signal lines may have a second multilevel conductive structures. Each of the first and second multilevel conductive structures includes a three-level TiN/Ti/Al or TiN/Al/Ti structure or a four-level TiN/Ti/AI/Ti structure. Each of the TiN film of the first and second structures has a nitrogen concentration of 25 atomic % or higher. The Al file may be replaced with an Al alloy.

摘要翻译： 提供了一种有源矩阵寻址LCD器件，其具有形成有导电线的有源矩阵基板，其抑制了AI小丘，而不会使线的结构复杂化，并且降低了线路端子处的电连接电阻增加，从而改善了 连接可靠性。 该器件包括具有透明电介质板，布置在板上的薄膜晶体管（TFT）和布置在板上的像素电极的有源矩阵基板。 TFT和扫描线的栅极具有第一多层导电结构。 公共电极和公共线可以具有第一多层导电结构。 TFT和信号线的源极和漏极可以具有第二多层导电结构。 第一和第二多层导电结构中的每一个包括三级TiN / Ti / Al或TiN / Al / Ti结构或四级TiN / Ti / Al / Ti结构。 第一和第二结构的TiN膜的氮浓度为25原子％以上。 Al文件可以用Al合金代替。

公开(公告)号：US20100021097A1

公开(公告)日：2010-01-28

申请号：US12302430

申请日：2007-05-31

申请人： Hiroyuki Uchida ,  Takamasa Ohira ,  Haruo Kamijo ,  Tsuyoshi Saito ,  Dai Kinno ,  Shingo Higashi ,  Naohiro Yoshida ,  Sadayuki Tanaka ,  Seisuke Takeda ,  Akitoshi Maeda ,  Tooru Shouda ,  Masateru Kondo ,  Kazunobu Taketa ,  Tomohiro Motoda

发明人： Hiroyuki Uchida ,  Takamasa Ohira ,  Haruo Kamijo ,  Tsuyoshi Saito ,  Dai Kinno ,  Shingo Higashi ,  Naohiro Yoshida ,  Sadayuki Tanaka ,  Seisuke Takeda ,  Akitoshi Maeda ,  Tooru Shouda ,  Masateru Kondo ,  Kazunobu Taketa ,  Tomohiro Motoda

IPC分类号： F16C33/62 ,  F16C33/64

CPC分类号： G03G15/0935 ,  B65G39/09 ,  C23C28/021 ,  C23C28/023 ,  C23C28/025 ,  F16C13/06 ,  F16C19/52 ,  F16C23/082 ,  F16C33/32 ,  F16C33/34 ,  F16C33/64 ,  F16C2204/34 ,  F16C2204/36 ,  F16C2204/50 ,  F16C2223/08 ,  F16C2223/80 ,  F16C2240/60 ,  F16C2300/42 ,  G03G15/0233 ,  G03G15/0808 ,  G03G15/0818 ,  G03G15/2053 ,  G03G15/751

摘要： A rolling device in which rust development or damage on a raceway surface or rolling surface is hard to occur even if water and the like intrude is provided. A self-aligning roller bearing comprises an inner ring 1, an outer ring 2, and a plurality of rolling elements 3 disposed rotatably between a raceway surface 1a of the inner ring 1 and a raceway surface 2a of the outer ring 2. At least any one of the inner ring 1, the outer ring 2, and the rolling elements 3 is provided with a metal coating formed by shot peening of a powder of metal less noble than iron at least on a part of its surface.

摘要翻译： 即使在水等侵入的情况下也难以发生生锈或轨道面或滚动面的损伤的滚动装置。 自调心滚子轴承包括内圈1，外圈2和可旋转地设置在内圈1的滚道表面1a和外圈2的滚道表面2a之间的多个滚动元件3。 内圈1，外圈2和滚动元件3中的一个设置有金属涂层，该金属涂层至少在其表面的一部分上通过对比金属更低的金属的粉末喷丸硬化而形成。

公开(公告)号：US20090273752A1

公开(公告)日：2009-11-05

申请号：US12458322

申请日：2009-07-08

申请人： Shigeru Kimura ,  Akitoshi Maeda ,  Satoshi Doi ,  Takayuki Ishino

发明人： Shigeru Kimura ,  Akitoshi Maeda ,  Satoshi Doi ,  Takayuki Ishino

IPC分类号： G02F1/1343

CPC分类号： G02F1/136227 ,  G02F1/13439

摘要： A liquid crystal display is fabricated which has bus wires disposed in a grid shape, switching elements coupled to the bus wires, and pixel electrodes which are disposed on an interlayer insulating film formed by coating and which are coupled with the switching elements. In fabricating the liquid crystal display, when a transparent conductive film is formed on the interlayer insulating film which is formed by coating, the temperature of the substrate is controlled to become 100° C.-170° C. In another embodiment, when the transparent conductive film is formed on the interlayer insulating film in a non-heated condition, an oxygen flow rate ratio is set to 1% or lower, and annealing is performed after forming the film. Thereby, when etching the ITO film on the interlayer insulating film, etching residue is not produced. Further, contact resistance between the ITO film and the lower layer metal can be uniformly decreased, and display defects can be obviated.

摘要翻译： 制造液晶显示器，其具有以栅格形状布置的总线，耦合到母线的开关元件和设置在由涂层形成并与开关元件耦合的层间绝缘膜上的像素电极。 在制造液晶显示器时，当在通过涂布形成的层间绝缘膜上形成透明导电膜时，将基板的温度控制为100℃-170℃。在另一个实施例中，当透明 在非加热状态下在层间绝缘膜上形成导电膜，将氧气流量比设定为1％以下，在形成膜之后进行退火。 因此，当蚀刻层间绝缘膜上的ITO膜时，不会产生蚀刻残留物。 此外，可以均匀地减少ITO膜和下层金属之间的接触电阻，并且可以避免显示缺陷。

公开(公告)号：US07609350B2

公开(公告)日：2009-10-27

申请号：US11523612

申请日：2006-09-20

申请人： Shingo Saigo ,  Takasuke Hayase ,  Makoto Horinouchi ,  Hideto Motoshima ,  Akitoshi Maeda

发明人： Shingo Saigo ,  Takasuke Hayase ,  Makoto Horinouchi ,  Hideto Motoshima ,  Akitoshi Maeda

IPC分类号： G02F1/1343

CPC分类号： G02F1/134363 ,  G02F1/133345 ,  G02F1/136227

摘要： A display portion is divided by scan lines and signal lines into sections where pixels are provided. Contact holes each for connecting common wiring and a common electrode together are not formed for all the pixels, but decimated so as to be arranged in zigzags.

摘要翻译： 显示部分被扫描线和信号线划分成设置像素的部分。 对于所有像素，不形成用于将公共布线和公共电极连接在一起的接触孔，而是以Z字形排列。