公开(公告)号：US09716581B2

公开(公告)日：2017-07-25

申请号：US14449001

申请日：2014-07-31

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy

IPC: H04L12/26 ,  H04L5/08 ,  H04B1/44

CPC classification number: H04L5/08 ,  H04B1/44 ,  H04L5/14

Abstract: A mobile communication system. The system has a housing comprising an interior region and an exterior region and a processing device provided within an interior region of the housing. The system has an rf transmit module coupled to the processing device, and configured on a transmit path. The system has a transmit filter provided within the rf transmit module. In an example, the transmit filter comprises a diplexer filter comprising a single crystal acoustic resonator device.

公开(公告)号：US20240164216A1

公开(公告)日：2024-05-16

申请号：US18417530

申请日：2024-01-19

Applicant: Akoustis, Inc.

Inventor： Craig Moe ,  Jeffrey B. Shealy ,  Mary Winters ,  Dae Ho Kim ,  Abhay Saranswarup Kochhar

IPC: H10N30/076 ,  H03H3/02 ,  H10N30/053 ,  H10N30/06 ,  H10N30/85

CPC classification number: H10N30/076 ,  H03H3/02 ,  H10N30/053 ,  H10N30/06 ,  H10N30/85 ,  Y10T29/42 ,  Y10T29/49005

Abstract: A method of forming a piezoelectric thin film includes sputtering a first surface of a substrate to provide a piezoelectric thin film comprising AlN, AlScN, AlCrN, HfMgAlN, or ZrMgAlN thereon, processing a second surface of the substrate that is opposite the first surface of the substrate to provide an exposed surface of the piezoelectric thin film from beneath the second surface of the substrate, wherein the exposed surface of the piezoelectric thin film includes a first crystalline quality portion, removing a portion of the exposed surface of the piezoelectric thin film to access a second crystalline quality portion that is covered by the first crystalline quality portion, wherein the second crystalline quality portion has a higher quality than the first crystalline quality portion and processing the second crystalline quality portion to provide an acoustic resonator device on the second crystalline quality portion.

公开(公告)号：US20230327628A1

公开(公告)日：2023-10-12

申请号：US18331577

申请日：2023-06-08

Applicant: Akoustis, Inc.

Inventor： Dae Ho KIM ,  Frank Zhiquang Bi ,  Mary Winters ,  Abhay Kochhar ,  Emad Mehdizadeh ,  Rohan W. Houlden ,  Jeffrey B. Shealy

IPC: H03H3/02 ,  H10N30/02 ,  H03H9/10 ,  H10N30/06 ,  H10N30/077 ,  H10N30/086 ,  H10N30/87 ,  H10N30/00 ,  H03H9/13 ,  H03H9/17 ,  H10N30/85 ,  H10N30/88 ,  H03H9/05 ,  H03H9/54 ,  H03H9/02

CPC classification number: H03H3/02 ,  H03H9/02015 ,  H03H9/02118 ,  H03H9/0523 ,  H03H9/105 ,  H03H9/13 ,  H03H9/173 ,  H03H9/175 ,  H03H9/177 ,  H03H9/547 ,  H10N30/02 ,  H10N30/06 ,  H10N30/077 ,  H10N30/086 ,  H10N30/10513 ,  H10N30/85 ,  H10N30/875 ,  H10N30/877 ,  H10N30/88 ,  H03H2003/021 ,  H03H2003/025 ,  Y10T29/42

Abstract: A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include a dielectric protection layer (DPL) that protects the piezoelectric layer from etching processes that can produce rough surfaces and reduces parasitic capacitance around the perimeter of the resonator when the DPL’s dielectric constant is lower than that of the piezoelectric layer. The DPL can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, or both.

公开(公告)号：US11711064B2

公开(公告)日：2023-07-25

申请号：US17944475

申请日：2022-09-14

Applicant: Akoustis, Inc.

Inventor： Dae Ho Kim ,  Mary Winters ,  Ramakrishna Vetury ,  Jeffrey B. Shealy

IPC: H03H9/02 ,  H03H3/02 ,  H03H9/17

CPC classification number: H03H9/02015 ,  H03H3/02 ,  H03H9/02047 ,  H03H9/173 ,  H03H2003/025

Abstract: An RF filter system includes a plurality of bulk acoustic wave resonators arranged in a circuit having serial and parallel shunt configurations of resonators. Each resonator having a reflector, a support member including a surface, a first electrode including tungsten, overlying the reflector, a piezoelectric film including crystalline aluminum scandium nitride overlapping the first electrode, a second electrode including tungsten overlapping the piezoelectric film and the first electrode, and a passivation layer including silicon nitride overlying the second electrode. Portions of the support member surface of at least one resonator define a cavity region having a portion of the first electrode of the at least one resonator is located within the cavity region. The pass band circuit response has a bandwidth corresponding to a thickness of at least one of the first electrode, piezoelectric film, second electrode, and passivation layer. The system can include single crystal or polycrystalline BAW resonators.

公开(公告)号：US11689186B2

公开(公告)日：2023-06-27

申请号：US16828675

申请日：2020-03-24

Applicant: Akoustis, Inc.

Inventor： Ya Shen ,  Rohan W. Houlden ,  David M. Aichele ,  Jeffrey B. Shealy

IPC: H03H9/60 ,  H03H9/56 ,  H03H9/05 ,  H03H9/10 ,  H03H9/17 ,  H03H9/54 ,  H03H9/00 ,  H03H3/02

CPC classification number: H03H9/605 ,  H03H3/02 ,  H03H9/0014 ,  H03H9/0095 ,  H03H9/0523 ,  H03H9/0533 ,  H03H9/105 ,  H03H9/173 ,  H03H9/175 ,  H03H9/176 ,  H03H9/542 ,  H03H9/562 ,  H03H9/564 ,  H03H9/566 ,  H03H9/568 ,  H03H2003/021 ,  H03H2003/025

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

公开(公告)号：US20230025951A1

公开(公告)日：2023-01-26

申请号：US17938190

申请日：2022-10-05

Applicant: Akoustis, Inc.

Inventor： Jeffrey B. Shealy

IPC: H03H9/02 ,  H03H9/54 ,  H03H9/00 ,  H03H9/05 ,  H03H9/17 ,  H03H9/56 ,  H03H9/60 ,  H03H3/08 ,  H03H9/205 ,  H03H3/02 ,  H01L41/18 ,  H01L41/29 ,  H03H9/64

Abstract: A method of fabricating a configurable single crystal acoustic resonator (SCAR) device integrated circuit. The method includes providing a bulk substrate structure having first and second recessed regions with a support member disposed in between. A thickness of single crystal piezo material is formed overlying the bulk substrate with an exposed backside region configured with the first recessed region and a contact region configured with the second recessed region. A first electrode with a first terminal is formed overlying an upper portion of the piezo material, while a second electrode with a second terminal is formed overlying a lower portion of the piezo material. An acoustic reflector structure and a dielectric layer are formed overlying the resulting bulk structure. The resulting device includes a plurality of single crystal acoustic resonator devices, numbered from (R1) to (RN), where N is an integer greater than 1.

公开(公告)号：US20220352456A1

公开(公告)日：2022-11-03

申请号：US17811222

申请日：2022-07-07

Applicant: Akoustis, Inc.

Inventor： Craig Moe ,  Jeffrey B. Shealy ,  Mary Winters ,  Dae Ho Kim ,  Abhay Saranswarup Kochhar

IPC: H01L41/316 ,  H01L41/18 ,  H01L41/29 ,  H01L41/273 ,  H03H3/02

Abstract: A method of forming a piezoelectric thin film includes sputtering a first surface of a substrate to provide a piezoelectric thin film comprising AlN, AlScN, AlCrN, HfMgAlN, or ZrMgAlN thereon, processing a second surface of the substrate that is opposite the first surface of the substrate to provide an exposed surface of the piezoelectric thin film from beneath the second surface of the substrate, wherein the exposed surface of the piezoelectric thin film includes a first crystalline quality portion, removing a portion of the exposed surface of the piezoelectric thin film to access a second crystalline quality portion that is covered by the first crystalline quality portion, wherein the second crystalline quality portion has a higher quality than the first crystalline quality portion and processing the second crystalline quality portion to provide an acoustic resonator device on the second crystalline quality portion.

公开(公告)号：US11424728B2

公开(公告)日：2022-08-23

申请号：US16901539

申请日：2020-06-15

Applicant: Akoustis, Inc.

Inventor： Dae Ho Kim ,  Mary Winters ,  Kenneth Fallon ,  Jeffrey B. Shealy

IPC: H03H3/02 ,  H03H9/10 ,  H03H9/13 ,  H03H9/17 ,  H03H9/54 ,  H01L41/047 ,  H01L41/053 ,  H01L41/08 ,  H01L41/18 ,  H01L41/23 ,  H01L41/29 ,  H01L41/317 ,  H01L41/337 ,  H03H9/02 ,  H03H9/05

Abstract: A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. One or more patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the one or more electrodes and a planarized support layer is deposited over the sacrificial layer. The support layer is etched to form one or more cavities overlying the electrodes to expose the sacrificial layer. The sacrificial layer is etched to release the cavities around the electrodes. Then, a cap layer is fusion bonded to the support layer to enclose the electrodes in the support layer cavities.

公开(公告)号：US11418169B2

公开(公告)日：2022-08-16

申请号：US16514717

申请日：2019-07-17

Applicant: Akoustis, Inc.

Inventor： Rohan W. Houlden ,  David M. Aichele ,  Jeffrey B. Shealy

IPC: H03H9/60 ,  H03H9/02 ,  H03H9/10 ,  H03H9/54 ,  H03H9/58 ,  H03H9/17 ,  H03H3/007 ,  H03H9/13

Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled to the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

公开(公告)号：US11411169B2

公开(公告)日：2022-08-09

申请号：US16742202

申请日：2020-01-14

Applicant: Akoustis, Inc.

Inventor： Craig Moe ,  Jeffrey B. Shealy ,  Mary Winters ,  Dae Ho Kim ,  Abhay Saranswarup Kochhar

IPC: H01L41/316 ,  H01L41/18 ,  H01L41/29 ,  H01L41/273 ,  H03H3/02

Abstract: A method of forming a piezoelectric thin film includes sputtering a first surface of a substrate to provide a piezoelectric thin film comprising AlN, AlScN, AlCrN, HfMgAlN, or ZrMgAlN thereon, processing a second surface of the substrate that is opposite the first surface of the substrate to provide an exposed surface of the piezoelectric thin film from beneath the second surface of the substrate, wherein the exposed surface of the piezoelectric thin film includes a first crystalline quality portion, removing a portion of the exposed surface of the piezoelectric thin film to access a second crystalline quality portion that is covered by the first crystalline quality portion, wherein the second crystalline quality portion has a higher quality than the first crystalline quality portion and processing the second crystalline quality portion to provide an acoustic resonator device on the second crystalline quality portion.