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1.发明公开公开(公告)号：US20240099143A1
公开(公告)日：2024-03-21
申请号：US18264318
申请日：2022-01-12
IPC分类号： H10N30/03 , H10N30/00 , H10N30/063 , H10N30/076 , H10N30/077 , H10N30/87 , H10N30/88
CPC分类号： H10N30/03 , H10N30/063 , H10N30/076 , H10N30/077 , H10N30/1051 , H10N30/87 , H10N30/883
摘要： There is provided a piezoelectric stack including: a substrate (1); a bottom electrode film (2) on the substrate; a piezoelectric film (3) on the bottom electrode film, having a planar area smaller than a planar area of the bottom electrode film; a top electrode film (4) on the piezoelectric film; and an insulating film (5) provided from the top electrode film to the bottom electrode film and covering at least a part of a side surface of the piezoelectric film, wherein the insulating film has a slope (9a) filling a step between a top surface of the top electrode film and a top surface of the bottom electrode film, and the slope has a shape alleviating the step.
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公开(公告)号：US20230247906A1
公开(公告)日：2023-08-03
申请号：US18013014
申请日：2021-06-25
IPC分类号： H10N30/077 , H10N30/093 , H01L21/02
CPC分类号： H10N30/077 , H01L21/02197 , H01L21/02282 , H10N30/093
摘要： A material deposition method comprising: preparing a precursor solution of Pb(Zrx,Ti1-x)O3 using 1-methoxy-2-propanol as a solvent and acetylacetone as a modifier; and forming a seed layer for a electroactive film by spin coating the precursor solution on a substrate. The electroactive film can be PZT, PZO or BFO, spin-coated or inkjet printed on the seed layer. Experience shows pure orientation for the piezoelectric film thanks to the use of 1-methoxy-2-propanol when preparing the seed layer. This orientation is attributed to the formation of nano crystals on the seed layer constituting a pre-crystallization.
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公开(公告)号：US11696505B2
公开(公告)日：2023-07-04
申请号：US16781543
申请日：2020-02-04
发明人： Kyoung Kook Kim
IPC分类号： H01L41/29 , H01L41/113 , H01L41/317 , H01L41/332 , H01L41/047 , G06K9/00 , H10N30/06 , G06V40/13 , H10N30/077 , H10N30/082 , H10N30/30 , H10N30/87 , H10N30/853
CPC分类号： H10N30/06 , G06V40/1306 , H10N30/077 , H10N30/082 , H10N30/302 , H10N30/878 , H10N30/8554
摘要： The present invention is directed to a method for manufacturing an ultrasonic fingerprint sensor by using a nanorod structure, the method including: a conductive mold generating step of generating a plurality of rod generation holes; a nanorod generating step of generating nanorods by filling the plurality of rod generation holes with a nano-piezoelectric material; a side electrode generation portion marking step of marking side electrode generation portions; a conductive mold etching step of generating nanorods and side electrodes by performing primary etching on the conductive mold; an insulating material filling step of filling portions with an insulating material; a lower electrode forming step of performing secondary etching and forming lower electrodes; a dummy substrate bonding step of bonding a dummy substrate to a surface on which the lower electrodes are formed; and an upper electrode forming step of removing the conductive substrate base and forming upper electrodes.
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公开(公告)号：US11990851B2
公开(公告)日：2024-05-21
申请号：US17216375
申请日：2021-03-29
发明人： Birol Ozturk , Peker Milas
IPC分类号： H10N30/077 , H02N2/00 , H02N2/18 , H10N30/057 , H10N30/098 , H10N30/30 , H10N30/50 , H10N30/857 , H10N30/87
CPC分类号： H02N2/22 , H02N2/18 , H10N30/057 , H10N30/077 , H10N30/098 , H10N30/30 , H10N30/50 , H10N30/857 , H10N30/877 , H10N30/878 , Y10T29/42
摘要： A method for manufacturing a piezoelectric element for generating electricity upon flexing of the element including the steps spin-coating a first substrate layer onto a support substrate; depositing a first electrode film onto the first substrate layer; spin coating polyvinylidene fluoride (PVDF) containing solution on the first electrode film to result in a PVDF film; annealing the PVDF film; depositing a second electrode film onto the PVDF film; spin-coating a second substrate layer on top of the second electrode film; forming a hole through the first and second substrate layers; filling the hole with silver paste to contact to the first and second electrode layers; peeling a resulting substrate/electrode/PVDF/electrode/substrate device from the support substrate; and placing a drop of silver paste in the hole formed in the first substrate layer.
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公开(公告)号：US20230364643A1
公开(公告)日：2023-11-16
申请号：US18316596
申请日：2023-05-12
申请人： Nelson L. JUMBE , Andreas SCHUH , Peter REXELIUS , Michael MORIMOTO , Wiljan SMAAL , Georges HADZIIOANNOU , Guillaume PAYROT
发明人： Nelson L. JUMBE , Andreas SCHUH , Peter REXELIUS , Michael MORIMOTO , Wiljan SMAAL , Georges HADZIIOANNOU , Guillaume PAYROT
IPC分类号： B06B1/06 , H10N30/00 , H10N30/80 , H10N30/857 , H10N30/87 , H10N30/88 , H10N30/045 , H10N30/06 , H10N30/077 , H10N30/088 , H10N39/00
CPC分类号： B06B1/0622 , H10N30/1071 , H10N30/802 , H10N30/857 , H10N30/878 , H10N30/883 , H10N30/045 , H10N30/06 , H10N30/077 , H10N30/088 , H10N39/00 , B06B2201/76 , A61B8/4209
摘要： There is disclosed a transducer and a method for generating the transducer. The transducer is formed on a substrate layer. The transducer includes a first electrode layer, a first piezoelectric layer on the first electrode layer, and a second electrode layer on the first piezoelectric layer. The first electrode layer is connected to a first electrical connector and the second electrode layer is connected to a second electrical connector. The transducer can be configured to act as an acoustic sensor or an electric potential sensor.
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6.发明公开公开(公告)号：US20230327628A1
公开(公告)日：2023-10-12
申请号：US18331577
申请日：2023-06-08
申请人： Akoustis, Inc.
发明人： Dae Ho KIM , Frank Zhiquang Bi , Mary Winters , Abhay Kochhar , Emad Mehdizadeh , Rohan W. Houlden , Jeffrey B. Shealy
IPC分类号： H03H3/02 , H10N30/02 , H03H9/10 , H10N30/06 , H10N30/077 , H10N30/086 , H10N30/87 , H10N30/00 , H03H9/13 , H03H9/17 , H10N30/85 , H10N30/88 , H03H9/05 , H03H9/54 , H03H9/02
CPC分类号： H03H3/02 , H03H9/02015 , H03H9/02118 , H03H9/0523 , H03H9/105 , H03H9/13 , H03H9/173 , H03H9/175 , H03H9/177 , H03H9/547 , H10N30/02 , H10N30/06 , H10N30/077 , H10N30/086 , H10N30/10513 , H10N30/85 , H10N30/875 , H10N30/877 , H10N30/88 , H03H2003/021 , H03H2003/025 , Y10T29/42
摘要： A method and structure for a transfer process for an acoustic resonator device. In an example, a bulk acoustic wave resonator (BAWR) with an air reflection cavity is formed. A piezoelectric thin film is grown on a crystalline substrate. Patterned electrodes are deposited on the surface of the piezoelectric film. An etched sacrificial layer is deposited over the electrodes and a planarized support layer is deposited over the sacrificial layer. The device can include a dielectric protection layer (DPL) that protects the piezoelectric layer from etching processes that can produce rough surfaces and reduces parasitic capacitance around the perimeter of the resonator when the DPL’s dielectric constant is lower than that of the piezoelectric layer. The DPL can be configured between the top electrode and the piezoelectric layer, between the bottom electrode and the piezoelectric layer, or both.
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公开(公告)号：US20240305223A1
公开(公告)日：2024-09-12
申请号：US18664382
申请日：2024-05-15
发明人： Birol Ozturk , Peker Milas
IPC分类号： H02N2/00 , H02N2/18 , H10N30/057 , H10N30/077 , H10N30/098 , H10N30/30 , H10N30/50 , H10N30/857 , H10N30/87
CPC分类号： H02N2/22 , H02N2/18 , H10N30/057 , H10N30/077 , H10N30/098 , H10N30/30 , H10N30/50 , H10N30/857 , H10N30/877 , H10N30/878 , Y10T29/42
摘要： A compact system for optimizing energy harvesting efficiency using of very thin (less than 10 μm thickness) PVDF films. The system is comprised of a flexible substrate such as polypropylene (PP) or Polydimethylsiloxane (PDMS) that supports PVDF thin films sandwiched between two aluminum electrode sheets. The PVDF films may be fabricated at different selected thicknesses by increasing spin rates. The PVDF films may also be fabricated in various different stacking arrangements in order to further allow the electrode to more efficiently produce energy.
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公开(公告)号：US20240088860A1
公开(公告)日：2024-03-14
申请号：US18510119
申请日：2023-11-15
申请人： Akoustis, Inc.
发明人： Craig Moe , Jeffrey M. Leathersich
IPC分类号： H03H3/02 , H03H9/02 , H03H9/05 , H03H9/10 , H03H9/13 , H03H9/17 , H03H9/54 , H10N30/00 , H10N30/02 , H10N30/06 , H10N30/077 , H10N30/086 , H10N30/85 , H10N30/87 , H10N30/88
CPC分类号： H03H3/02 , H03H9/02015 , H03H9/02118 , H03H9/0523 , H03H9/105 , H03H9/13 , H03H9/173 , H03H9/175 , H03H9/177 , H03H9/547 , H10N30/02 , H10N30/06 , H10N30/077 , H10N30/086 , H10N30/10513 , H10N30/85 , H10N30/875 , H10N30/877 , H10N30/88 , H03H2003/021 , H03H2003/025 , H10N30/072 , Y10T29/42
摘要： A method of forming a piezoelectric thin film can include depositing a material on a first surface of a Si substrate to provide a stress neutral template layer. A piezoelectric thin film including a Group III element and nitrogen can be sputtered onto the stress neutral template layer and a second surface of the Si substrate that is opposite the first surface can be processed to remove that Si substrate and the stress neutral template layer to provide a remaining portion of the piezoelectric thin film. A piezoelectric resonator can be formed on the remaining portion of the piezoelectric thin film.
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公开(公告)号：US11800809B2
公开(公告)日：2023-10-24
申请号：US17183631
申请日：2021-02-24
发明人： Koji Ohashi
IPC分类号： H01L41/047 , H10N30/87 , B06B1/02 , B41J2/14 , A61B8/14 , A61B8/00 , B06B1/06 , B41J2/16 , A61B8/08 , A61B8/06 , H10N30/077 , H10N30/082 , H10N30/80 , H10N30/20 , G01N29/24 , H10N30/853
CPC分类号： H10N30/875 , A61B8/06 , A61B8/085 , A61B8/145 , A61B8/4281 , A61B8/4427 , A61B8/4444 , A61B8/4488 , A61B8/4494 , B06B1/0207 , B06B1/0622 , B06B1/0666 , B41J2/14233 , B41J2/14274 , B41J2/161 , B41J2/1628 , H10N30/077 , H10N30/082 , H10N30/2047 , H10N30/802 , H10N30/87 , B06B2201/76 , G01N29/2437 , H10N30/8554 , H10N30/877
摘要： A piezoelectric element includes a first electrode layer, a piezoelectric layer, and a second electrode layer. The first electrode layer, the piezoelectric layer, and the second electrode layer are stacked in sequence on one another. The first electrode layer has a first part overlapping the piezoelectric layer in a plan view, and a second part at least partially separated from the first part and not overlapping the piezoelectric layer in the plan view. The second electrode layer has a third part overlapping the piezoelectric layer in the plan view, and a fourth part separated from the third part. The fourth part is in contact with the first part and the second part.
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10.发明公开公开(公告)号：US20230253943A1
公开(公告)日：2023-08-10
申请号：US18303163
申请日：2023-04-19
申请人： Akoustis, Inc.
IPC分类号： H03H3/02 , H03H9/10 , H03H9/13 , H03H9/17 , H03H9/54 , H03H9/02 , H03H9/05 , H10N30/02 , H10N30/06 , H10N30/077 , H10N30/85 , H10N30/086 , H10N30/88 , H10N30/87 , H10N30/00
CPC分类号： H03H3/02 , H03H9/105 , H03H9/13 , H03H9/173 , H03H9/177 , H03H9/547 , H03H9/175 , H03H9/02015 , H03H9/02118 , H03H9/0523 , H10N30/02 , H10N30/06 , H10N30/077 , H10N30/85 , H10N30/086 , H10N30/88 , H10N30/875 , H10N30/877 , H10N30/10513 , Y10T29/42 , H03H2003/025 , H03H2003/021
摘要： A bulk acoustic wave (BAW) resonator includes a solidly mounted reflector, for example, a Bragg-type reflector, a piezoelectric layer, and first and second electrodes on first and second surfaces, respectively, of the piezoelectric layer. A filter device or filter system includes at least one BAW resonator. Related methods of fabrication include forming the BAW resonator.
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