摘要:
In a lithographic projection system, the radiation energy delivered to the substrate needs to be accurately controlled. Attenuation by injecting an absorbent gas into a volume through which the radiation passes is a convenient way to control the energy. Additionally, the interaction between gasses and the radiation may be used to measure the energy of the radiation with minimal disruption to the radiation.
摘要:
A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.
摘要:
A radiation source generates short-wavelength radiation, such as extreme ultraviolet radiation, for use in lithography. Rotating electrodes are provided which dip into respective baths of liquid metal, for example, tin. An electrical discharge is produced between the electrodes to generate the radiation. Holes are provided in the electrodes and/or in a metal shielding plate around the electrodes to enable better pumping down to low pressure in the vicinity of the discharge to improve the conversion efficiency of the source. The holes in the electrodes improve cooling of the electrodes by causing stirring of the liquid metal, and by improving the thermal and electrical contact between the electrodes and the liquid metal. Improved electrical contact also reduces the time-constant of the discharge circuit, thereby further improving the conversion efficiency of the source.
摘要:
The invention relates to a lithographic apparatus that includes a system configured to condition a radiation beam or project a patterned radiation beam onto a target portion of a substrate. The system includes an optically active device configured to direct the radiation beam or the patterned radiation beam, respectively, and a support structure configured to support the optically active device. The apparatus further includes a gas supply for providing a background gas into the system. The radiation beam or patterned radiation beam react with the background gas to form a plasma that includes a plurality of ions. The support structure includes an element that includes a material that has a low sputtering yield, a high sputter threshold energy, or a high ion implantation yield, to reduce sputtering and the creation of sputtering products.
摘要:
A method for the removal of a deposition on an optical element of an apparatus including the optical element includes providing an H2 containing gas in at least part of the apparatus includes producing hydrogen radicals from H2 from the H2 containing gas; and bringing the optical element with deposition into contact with at least part of the hydrogen radicals and removing at least part of the deposition. Further, a method for the protection of an optical element of an apparatus including the optical element includes providing a cap layer to the optical element by a deposition process; and during or after use of the apparatus, removing at least part of the cap layer from the optical element in a removal process as described above. The methods can be applied in a lithographic apparatus.
摘要:
A multi-layered spectral purity filter improves the spectral purity of extreme ultra-violet (EUV) radiation and also collects debris emitted from a radiation source.
摘要:
A device manufacturing method includes projecting a patterned beam of radiation through an optics compartment and a channel that provides an open connection between the optics compartment and a substrate compartment onto a substrate, maintaining an ionized flush gas at a higher pressure in the channel than in the substrate compartment and in the optics compartment during the projecting, intercepting particles that emanate from the substrate with the ionized flush gas, pumping the flush gas carrying the intercepted particles from the substrate compartment using a pump coupled to a gas outlet coupled to at least one of the compartments, and establishing an electrical potential difference between a wall of the channel and the outlet and/or a rotor of the pump so that the outlet and/or the rotor of the pump attracts positively charged ions that stem from the flush gas in the channel.
摘要:
A method for the removal of a deposition on an optical element of an apparatus including the optical element includes providing an H2 containing gas in at least part of the apparatus includes producing hydrogen radicals from H2 from the H2 containing gas; and bringing the optical element with deposition into contact with at least part of the hydrogen radicals and removing at least part of the deposition. Further, a method for the protection of an optical element of an apparatus including the optical element includes providing a cap layer to the optical element by a deposition process; and during or after use of the apparatus, removing at least part of the cap layer from the optical element in a removal process as described above. The methods can be applied in a lithographic apparatus.
摘要:
In a lithographic projection apparatus, an object such as a mask is shielded from stray particles by a particle shield using electromagnetic fields. The fields may be a uniform electric field, a non-uniform electric field or an optical breeze. The particle shield is fixed to the mask holder rather than the mask.
摘要:
A lithographic projection apparatus includes a radiation system for supplying a projection beam of radiation having a propagation direction, a support structure for supporting patterning structure, the patterning structure serving to pattern the projection beam according to a desired pattern, a substrate table for holding a substrate and a projection system for projecting the patterned beam onto a target portion of the substrate, wherein the lithographic projection apparatus further includes a sensor for measuring a movement of the projection beam perpendicular to its propagation direction and a controller to control a received dose of the projection beam on a target portion of the substrate in response to an output from the sensor.