公开(公告)号：US11789358B2

公开(公告)日：2023-10-17

申请号：US17234996

申请日：2021-04-20

Applicant: Applied Materials, Inc.

Inventor： Wen Xiao ,  Vibhu Jindal ,  Weimin Li ,  Sanjay Bhat ,  Azeddine Zerrade

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: Extreme ultraviolet (EUV) mask blanks and methods for their manufacture, and production systems therefor are disclosed. The method for forming an EUV mask blank comprises smoothing out surface defects on a surface of a substrate.

公开(公告)号：US11669008B2

公开(公告)日：2023-06-06

申请号：US17077176

申请日：2020-10-22

Applicant: Applied Materials, Inc.

Inventor： Wen Xiao ,  Sanjay Bhat ,  Shiyu Liu ,  Binni Varghese ,  Vibhu Jindal ,  Azeddine Zerrade

IPC: G03F1/22 ,  C23C14/34 ,  H01J37/34 ,  C23C14/06 ,  H01J37/32 ,  C23C14/00

CPC classification number: G03F1/22 ,  C23C14/0036 ,  C23C14/0652 ,  C23C14/0676 ,  C23C14/3464 ,  H01J37/32477 ,  H01J37/3429

Abstract: Methods for the manufacture of extreme ultraviolet (EUV) mask blanks and production systems therefor are disclosed. A method for forming an EUV mask blank comprises forming a bilayer on a portion of a multi-cathode PVD chamber interior and then forming a multilayer stack of Si/Mo on a substrate in the multi-cathode PVD chamber.

公开(公告)号：US20220197128A1

公开(公告)日：2022-06-23

申请号：US17129077

申请日：2020-12-21

Applicant: Applied Materials, Inc.

Inventor： Ribhu Gautam ,  Vibhu Jindal ,  Sanjay Bhat ,  Praveen Kumar Choragudi ,  Vinodh Ramachandran ,  Arun Rengaraj

IPC: G03F1/24 ,  H01L21/67 ,  H01L21/687 ,  C23C14/06 ,  C23C14/56 ,  C23C14/58 ,  C23C14/35 ,  B65G47/90

Abstract: Substrate processing systems or platforms and methods configured to process substrates including of extreme ultraviolet (EUV) mask blanks are disclosed. Systems or platforms provide a small footprint, high throughput of substrates and minimize defect generation. The substrate processing system platform comprises a single central transfer chamber, a single transfer robot, a substrate flipping fixture, and processing chambers are positioned around the single central transfer chamber.

公开(公告)号：US11365475B2

公开(公告)日：2022-06-21

申请号：US16943292

申请日：2020-07-30

Applicant: Applied Materials, Inc.

Inventor： Vibhu Jindal ,  Shiyu Liu ,  Sanjay Bhat ,  Shuwei Liu ,  Wen Xiao

IPC: H01J37/32 ,  C23C14/56

Abstract: Methods of cleaning a PVD chamber component, for example, process kit components are disclosed. The method comprises at least one of directing a jet of pressurized fluid at a surface of the PVD chamber component, directing pressurized carbon dioxide at the surface of the PVD chamber component, placing the PVD chamber component in a liquid and producing ultrasonic waves in the liquid to further remove contaminants from the surface of the PVD chamber component, using a plasma to clean the surface of the PVD chamber component, subjecting the PVD chamber component to a thermal cycle by heating up to a peak temperature of at least 50° C. and subsequently cooling down to room, placing the PVD chamber component in a process chamber, reducing the pressure in the process chamber below atmospheric pressure and purging the process chamber with a gas, surface conditioning the surface of the PVD chamber component, and drying the surface of the PVD chamber component by directing a gas on the surface of the PVD chamber component.

公开(公告)号：US20220187697A1

公开(公告)日：2022-06-16

申请号：US17122065

申请日：2020-12-15

Applicant: Applied Materials, Inc.

Inventor： Herng Yau Yoong ,  Wen Xiao ,  Ribhu Gautam ,  Sanjay Bhat ,  Vibhu Jindal

IPC: G03F1/22

Abstract: Apparatus and methods to improve centroid wavelength uniformity of EUV mask blanks are disclosed. The apparatus and methods may utilize one or more of heating the backside and/or the front side of the EUV mask blank. Selected regions and sub regions of the EUV mask blank are selectively heated, resulting in improved centroid wavelength uniformity of EUV mask blanks.

公开(公告)号：US20190382879A1

公开(公告)日：2019-12-19

申请号：US16444570

申请日：2019-06-18

Applicant: Applied Materials, Inc.

Inventor： Vibhu Jindal ,  Sanjay Bhat

IPC: C23C14/04 ,  C23C14/14 ,  C23C14/34

Abstract: A deposition system and a method of operation thereof are disclosed. A PVD chamber is disclosed comprising a plurality of cathode assemblies, a rotating shield below the plurality of cathode assemblies to expose one of the plurality cathode assemblies through the shroud and through a shield hole of the shield, the shield comprising a top surface including a raised peripheral frame. A shield mount sized and shaped to engage with the raised peripheral frame to secure the shield mount to the shield secures the shield mount to the shield.

公开(公告)号：US20190057851A1

公开(公告)日：2019-02-21

申请号：US15680975

申请日：2017-08-18

Applicant: Applied Materials, Inc.

Inventor： Sanjay Bhat ,  Vibhu Jindal ,  Vishwas Kumar Pandey

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35 ,  C22C9/04 ,  C22C9/06 ,  B23K15/00

Abstract: Physical vapor deposition target assemblies and methods of manufacturing such target assemblies are disclosed. An exemplary target assembly comprises a flow pattern including a plurality of arcs and bends fluidly connected to an inlet end and an outlet end.

公开(公告)号：US20190057849A1

公开(公告)日：2019-02-21

申请号：US15681022

申请日：2017-08-18

Applicant: Applied Materials, Inc.

Inventor： Vibhu Jindal ,  Sanjay Bhat ,  Majeed A. Foad

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/34 ,  G03F1/22

Abstract: Physical vapor deposition processing chambers and methods of processing a substrate such as an EUV mask blank in a physical vapor deposition chamber are disclosed. An electric field and a magnetic field are utilized to deflect particles from a substrate being processed in the chamber.

公开(公告)号：US11668003B2

公开(公告)日：2023-06-06

申请号：US17552505

申请日：2021-12-16

Applicant: Applied Materials, Inc.

Inventor： Vibhu Jindal ,  Sanjay Bhat

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/04 ,  C23C14/34 ,  C23C14/18

CPC classification number: C23C14/351 ,  C23C14/042 ,  C23C14/185 ,  C23C14/3407 ,  H01J37/3408 ,  H01J37/3429

Abstract: A deposition system, and a method of operation thereof are disclosed. The deposition system comprises a cathode assembly comprising a rotating magnet assembly including a plurality of outer peripheral magnets surrounding an inner peripheral magnet.

公开(公告)号：US11639544B2

公开(公告)日：2023-05-02

申请号：US16801631

申请日：2020-02-26

Applicant: Applied Materials, Inc.

Inventor： Sanjay Bhat ,  Vibhu Jindal ,  Wen Xiao

IPC: C23C14/35 ,  C23C14/34 ,  H01L21/02 ,  C23C14/04 ,  C23C14/16

Abstract: A physical vapor deposition (PVD) chamber and a method of operation thereof are disclosed. Chambers and methods are described that provide a chamber comprising an upper shield with two holes that are positioned to permit alternate sputtering from two targets.