公开(公告)号：US08879309B2

公开(公告)日：2014-11-04

申请号：US13914396

申请日：2013-06-10

申请人： Avalanche Technology, Inc.

发明人： Yuchen Zhou ,  Ebrahim Abedifard ,  Zihui Wang

IPC分类号： G11C11/16

CPC分类号： G11C11/16 ,  G11C11/1659 ,  G11C11/1675

摘要： A spin-transfer torque memory random access memory (STTMRAM) cell is disclosed comprising a selected magnetic tunnel junction (MTJ) identified to be programmed; a first transistor having a first port, a second port and a gate, the first port of the first transistor coupled to the selected MTJ; a first neighboring MTJ coupled to the selected MTJ through the second port of the first transistor; a second transistor having a first port, a second port, and a gate, the first port of the second transistor coupled to the selected MTJ; a second neighboring MTJ coupled to the selected MTJ through the second port of the second transistor; a first bit/source line coupled to the second end of the selected MTJ; and a second bit/source line coupled to the second end of the first neighboring MTJ and the second end of the second neighboring MTJ.

摘要翻译： 公开了一种自动转移转矩存储器随机存取存储器（STTMRAM）单元，其包括被识别为被编程的所选择的磁性隧道结（MTJ）; 具有第一端口，第二端口和栅极的第一晶体管，耦合到所选择的MTJ的第一晶体管的第一端口; 通过第一晶体管的第二端口耦合到所选择的MTJ的第一相邻MTJ; 具有第一端口，第二端口和栅极的第二晶体管，耦合到所选择的MTJ的第二晶体管的第一端口; 通过第二晶体管的第二端口耦合到所选择的MTJ的第二相邻MTJ; 耦合到所选MTJ的第二端的第一位/源极线; 以及耦合到第一相邻MTJ的第二端和第二相邻MTJ的第二端的第二位/源极线。

公开(公告)号：US20140151827A1

公开(公告)日：2014-06-05

申请号：US14173145

申请日：2014-02-05

申请人： Avalanche Technology Inc.

发明人： Yuchen Zhou ,  Zihui Wang ,  Huadong Gan ,  Yiming Huai

IPC分类号： H01L43/02

CPC分类号： H01L43/02 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/14 ,  H01F10/16 ,  H01F10/3222 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/302 ,  H01F41/307 ,  H01L27/222 ,  H01L27/228 ,  H01L29/66984 ,  H01L43/08 ,  H01L43/10

摘要： The present invention is directed to an STT-MRAM device including a plurality of magnetic tunnel junction (MTJ) memory elements. Each of the memory elements comprises a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween; and a magnetic fixed layer separated from the magnetic reference layer structure by an anti-ferromagnetic coupling layer. The magnetic reference layer structure includes a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated from the first magnetic reference layer by a first non-magnetic perpendicular enhancement layer, the first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer plane thereof, the magnetic fixed layer has a second invariable magnetization direction that is substantially perpendicular to layer plane thereof and is opposite to the first invariable magnetization direction.

摘要翻译： 本发明涉及一种包括多个磁性隧道结（MTJ）存储元件的STT-MRAM器件。 每个存储元件包括磁性自由层结构和介于其间的绝缘隧道结层的磁性参考层结构; 以及通过反铁磁性耦合层与磁性参考层结构分离的磁性固定层。 磁参考层结构包括邻近绝缘隧道结层形成的第一磁参考层和通过第一非磁垂直增强层与第一磁参考层分离的第二磁参考层，第一和第二磁参考层具有 基本上垂直于其层平面的第一不变磁化方向，磁性固定层具有基本上垂直于其层平面并与第一不变磁化方向相反的第二不变磁化方向。

公开(公告)号：US20240015986A1

公开(公告)日：2024-01-11

申请号：US17952821

申请日：2022-09-26

申请人： Avalanche Technology, Inc.

发明人： Zhiqiang Wei ,  Zihui Wang

IPC分类号： H01L27/22 ,  H01L43/12

CPC分类号： H01L27/224 ,  H01L43/12

摘要： The present invention is directed to a memory cell including first and second unidirectional selectors coupled in parallel to a nonvolatile memory element. Each of the first and second unidirectional selectors includes first, second, and third electrode layers; a first insulator layer interposed between the first and second electrode layers; and a second insulator layer interposed between the second and third electrode layers. The first insulator layer of the first unidirectional selector includes therein a permanent conductive path and the second insulator layer of the first unidirectional selector is operable to form therein a volatile conductive path upon application of a potential across the first unidirectional selector. The second insulator layer of the second unidirectional selector includes therein another permanent conductive path and the first insulator layer of the second unidirectional selector is operable to form therein another volatile conductive path upon application of another potential across the second selector.

公开(公告)号：US11785784B2

公开(公告)日：2023-10-10

申请号：US17752154

申请日：2022-05-24

申请人： Avalanche Technology, Inc.

发明人： Zihui Wang ,  Yiming Huai

IPC分类号： H01L43/08 ,  H10B61/00 ,  G11C11/16 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

CPC分类号： H10B61/20 ,  G11C11/161 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85 ,  H10B61/22

摘要： The present invention is directed to a perpendicular magnetic structure including a seed layer structure that includes a first seed layer comprising a metal element and oxygen, and a second seed layer formed on top of the first seed layer and comprising chromium. The metal element is one of titanium, tantalum, or magnesium. The perpendicular magnetic structure further includes a magnetic fixed layer structure formed on top of the seed layer structure and having an invariable magnetization direction substantially perpendicular to a layer plane of the magnetic fixed layer structure. The magnetic fixed layer structure includes layers of a magnetic material interleaved with layers of a transition metal. The magnetic material includes cobalt. The transition metal is one of nickel, platinum, palladium, or iridium.

公开(公告)号：US20220376172A1

公开(公告)日：2022-11-24

申请号：US17871147

申请日：2022-07-22

申请人： Avalanche Technology, Inc.

发明人： Zihui Wang ,  Yiming Huai

IPC分类号： H01L43/08 ,  G11C11/15 ,  G11C11/16 ,  H01L43/02 ,  H01F10/32 ,  H01F41/30 ,  H01L27/22 ,  H01L29/66 ,  H01L43/10

摘要： The present invention is directed to a magnetic memory element including a magnetic free layer structure incorporating two magnetic free layers separated by a perpendicular enhancement layer (PEL) and having a variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure; an anti-ferromagnetic coupling layer formed adjacent to the magnetic reference layer structure; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The magnetic reference layer structure includes first, second, and third magnetic reference layers separated by two PELs and having a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer has a second invariable magnetization direction substantially opposite to the first invariable magnetization direction.

公开(公告)号：US20210159399A1

公开(公告)日：2021-05-27

申请号：US17156562

申请日：2021-01-23

申请人： Avalanche Technology, Inc.

发明人： Yiming Huai ,  Zihui Wang

IPC分类号： H01L43/08 ,  G11C11/15 ,  G11C11/16 ,  H01L43/02 ,  H01L43/10 ,  H01F10/32 ,  H01F41/30 ,  H01L27/22 ,  H01L29/66

摘要： The present invention is directed to a magnetic memory element including a magnetic free layer structure incorporating three magnetic free layers separated by two perpendicular enhancement layers (PELs) and having a variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure; a second magnetic reference layer separated from the first magnetic reference layer by a third perpendicular enhancement layer; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer has a second invariable magnetization direction substantially opposite to the first invariable magnetization direction.

公开(公告)号：US10361362B2

公开(公告)日：2019-07-23

申请号：US15815516

申请日：2017-11-16

申请人： Avalanche Technology, Inc.

发明人： Huadong Gan ,  Yiming Huai ,  Yuchen Zhou ,  Zihui Wang

IPC分类号： H01F10/32 ,  H01L43/08 ,  G11C11/16

摘要： The present invention is directed to a magnetic memory element including a magnetic free layer and a first magnetic reference layer with an insulating tunnel junction layer interposed therebetween; a second magnetic reference layer made of a material comprising cobalt and formed adjacent to the first magnetic reference layer opposite the insulating tunnel junction layer; an iridium layer formed adjacent to the second magnetic reference layer opposite the first magnetic reference layer; and a magnetic fixed layer formed adjacent to the iridium layer. The magnetic free layer has a variable magnetization direction substantially perpendicular to the layer plane thereof. The first and second magnetic reference layers have a first fixed magnetization direction substantially perpendicular to the layer planes thereof. The magnetic fixed layer has a second fixed magnetization direction that is substantially perpendicular to the layer plane thereof and is substantially opposite to the first fixed magnetization direction.

公开(公告)号：US20190198752A1

公开(公告)日：2019-06-27

申请号：US16287974

申请日：2019-02-27

申请人： Avalanche Technology, Inc.

发明人： Zihui Wang ,  Yiming Huai

IPC分类号： H01L43/08 ,  H01L29/66 ,  H01F10/32 ,  H01F41/30 ,  H01L27/22 ,  G11C11/15 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

CPC分类号： H01L43/08 ,  B82Y40/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/302 ,  H01L27/228 ,  H01L29/66984 ,  H01L43/02 ,  H01L43/10

摘要： The present invention is directed to a magnetic memory element including a magnetic free layer structure including one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer formed adjacent to the insulating tunnel junction layer opposite the magnetic free layer structure; a second magnetic reference layer separated from the first magnetic reference layer by a magnesium perpendicular enhancement layer; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the anti-ferromagnetic coupling layer. The first and second magnetic reference layers have a first invariable magnetization direction substantially perpendicular to layer planes thereof. The magnetic fixed layer structure has a second invariable magnetization direction substantially opposite to the first invariable magnetization direction.

公开(公告)号：US10153017B2

公开(公告)日：2018-12-11

申请号：US15264847

申请日：2016-09-14

申请人： Avalanche Technology, Inc.

发明人： Hongxin Yang ,  Xiaobin Wang ,  Jing Zhang ,  Xiaojie Hao ,  Zihui Wang ,  Kimihiro Satoh

IPC分类号： G11C11/16 ,  H01L27/22 ,  H01L43/02

摘要： The present invention is directed to a method for sensing the resistance state of a memory cell that includes an MTJ memory element coupled to a two-terminal selector element in series. The method includes the steps of raising a cell voltage across the memory cell above a threshold voltage for the selector element to become conductive; decreasing the cell voltage to a first sensing voltage and measuring a first sensing current passing through the memory cell, the selector element being nominally conductive irrespective of the resistance state of the MTJ memory element at the first sensing voltage; and further decreasing the cell voltage to a second sensing voltage and measuring a second sensing current, the selector element being nominally conductive if the MTJ memory element is in the low resistance state or nominally insulative if the MTJ memory element is in the high resistance state at the second sensing voltage.

公开(公告)号：US10008663B1

公开(公告)日：2018-06-26

申请号：US15491220

申请日：2017-04-19

申请人： Avalanche Technology, Inc.

发明人： Xiaojie Hao ,  Zihui Wang ,  Huadong Gan ,  Yuchen Zhou ,  Yiming Huai

IPC分类号： H01L43/10 ,  H01L43/08 ,  H01L43/02 ,  G11C11/16 ,  H01L27/22

CPC分类号： H01L43/10 ,  G11C11/161 ,  H01L43/08

摘要： The present invention is directed to an MTJ memory element, which includes a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; a tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure formed adjacent to the tunnel junction layer and having a first invariable magnetization direction perpendicular to a layer plane thereof; an anti-ferromagnetic coupling layer formed adjacent to the magnetic reference layer structure; and a magnetic fixed layer structure formed adjacent to the anti-ferromagnetic coupling layer and having a second invariable magnetization direction that is perpendicular to a layer plane thereof and is opposite to the first invariable magnetization direction. The magnetic fixed layer structure includes multiple stacks of a trilayer unit structure, which includes three layers of different materials with at least one of the three layers of different materials being magnetic.