公开(公告)号：US5346833A

公开(公告)日：1994-09-13

申请号：US43669

申请日：1993-04-05

申请人： Biing-Seng Wu

发明人： Biing-Seng Wu

IPC分类号： G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/45 ,  H01L31/18

CPC分类号： G02F1/1368 ,  H01L27/1214 ,  H01L29/458 ,  H01L29/66765

摘要： An inverted staggered (bottom gate) thin film transistor (TFT) for active matrix liquid crystal display is processed with three masks. The first mask is used to pattern a metal film on a glass substrate as the gate of the TFT, the scan line of the TFT array, and a portion of the data line of the TFT array. The second mask is used to form a TFT mesa with a gate dielectric layer, an a-Si layer as channel, and a heavily-doped n+s-Si layer for contacting the source and the drain of the TFT. A third mask is used to pattern the transparent conductive indium-tin oxide film as the pixel electrode, the source/drain electrodes of the TFT, and the interconnections of the data line.

摘要翻译： 用三个掩模处理用于有源矩阵液晶显示器的倒置交错（底栅极）薄膜晶体管（TFT）。 第一掩模用于将作为TFT的栅极，TFT阵列的扫描线和TFT阵列的数据线的一部分的玻璃基板上的金属膜图案化。 第二掩模用于形成具有栅极介电层，a-Si层作为沟道的TFT台面和用于接触TFT的源极和漏极的重掺杂n + s-Si层。 使用第三掩模来图案化透明导电铟锡氧化物膜作为像素电极，TFT的源/漏电极和数据线的互连。

公开(公告)号：US5173753A

公开(公告)日：1992-12-22

申请号：US826674

申请日：1992-01-27

申请人： Biing-Seng Wu

发明人： Biing-Seng Wu

IPC分类号： H01L21/336 ,  H01L29/786

CPC分类号： H01L29/78696 ,  H01L29/66765

摘要： A process for manufacturing thin film transistors that have small source-drain areas, small gate-source parasitic capacitance C.sub.gs, and low contact resistance, comprising producing the gate of the transistor on a glass substrate, depositing a gate insulating layer, a thick undoped amorphous silicon layer and a top passivation layer successively on the substrate. The top passivation layer and the thick undoped amorphous silicon layer are then etched until the insulating layer is exposed.

摘要翻译： 一种用于制造具有小的源极 - 漏极区域，小的栅极 - 源极寄生电容Cgs和低接触电阻的薄膜晶体管的工艺，包括在玻璃衬底上制造晶体管的栅极，沉积栅绝缘层， 硅层和顶部钝化层。 然后蚀刻顶部钝化层和厚未掺杂的非晶硅层，直到暴露出绝缘层。

公开(公告)号：US20090009699A1

公开(公告)日：2009-01-08

申请号：US12167545

申请日：2008-07-03

申请人： Biing-Seng Wu

发明人： Biing-Seng Wu

IPC分类号： G02F1/1335 ,  G02B1/00 ,  B29D11/00 ,  G02B5/20

CPC分类号： B29D11/00634 ,  G02B5/201 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/133516 ,  G02F2201/121

摘要： A color filter substrate, a method for manufacturing the same, and a liquid crystal display (LCD) panel using the same are provided. The color filter substrate includes a base material, a filter structure, and a common electrode layer. The filter structure includes a sheltering matrix and a plurality of color filter layers. The sheltering matrix disposed above the base material includes a black resin layer and a conducting material layer. The black resin layer has a plurality of openings for exposing a partial surface of the base material. The conducting material layer is disposed on the black resin layer. The color filter layers are disposed in the plurality of openings of the black resin layer. The common electrode layer is disposed on the filter structure.

摘要翻译： 提供一种滤色器基板，其制造方法和使用该滤色器基板的液晶显示器（LCD）面板。 滤色器基板包括基材，滤光器结构和公共电极层。 滤波器结构包括遮蔽矩阵和多个滤色器层。 设置在基材上方的防护基体包括黑色树脂层和导电材料层。 黑色树脂层具有用于暴露基材的局部表面的多个开口。 导电材料层设置在黑色树脂层上。 滤色器层设置在黑色树脂层的多个开口中。 公共电极层设置在过滤器结构上。

公开(公告)号：US20080055216A1

公开(公告)日：2008-03-06

申请号：US11812427

申请日：2007-06-19

申请人： Cheng-Chi Yen ,  Biing-Seng Wu ,  Yung-Yuan Ho ,  Ying-Chou Tu

发明人： Cheng-Chi Yen ,  Biing-Seng Wu ,  Yung-Yuan Ho ,  Ying-Chou Tu

IPC分类号： G09G3/36 ,  G09G5/10

CPC分类号： G09G3/3648 ,  G09G3/3655 ,  G09G2300/0809 ,  G09G2300/0842 ,  G09G2300/0876 ,  G09G2310/0235 ,  G09G2310/0251

摘要： Embodiments of the present invention set forth methods and systems for driving display devices. In one embodiment, a first set of image data to be displayed on a display panel is stored. During a first time period, a reset signal is asserted to set the display panel associated with a common panel voltage to a predictable state. Subsequent to the first time period, a control signal is asserted to load the first set of image data for a first subframe within a frame on the display panel, wherein this first set of image data is further adjusted by a first adjustable reference voltage. A designated light for the display panel is turned on to display the first set of image data in parallel with the storing of a second set of image data for a subframe within the frame to be displayed.

摘要翻译： 本发明的实施例提出了用于驱动显示装置的方法和系统。 在一个实施例中，存储要显示在显示面板上的第一组图像数据。 在第一时间段期间，确定复位信号以将与公共面板电压相关联的显示面板设置为可预测状态。 在第一时间段之后，控制信号被断言以加载显示面板上的帧内的第一子帧的第一组图像数据，其中该第一组图像数据被第一可调参考电压进一步调整。 打开用于显示面板的指示灯，以与存储要显示的帧内的子帧的第二组图像数据并行地显示第一组图像数据。

公开(公告)号：US20070235740A1

公开(公告)日：2007-10-11

申请号：US11695823

申请日：2007-04-03

申请人： Seok-Woon LEE ,  Sung-Soo PARK ,  Biing-Seng Wu

发明人： Seok-Woon LEE ,  Sung-Soo PARK ,  Biing-Seng Wu

IPC分类号： H01L29/08 ,  H01L35/24

CPC分类号： H01L27/3253

摘要： An organic light emitting device is formed by assembling a first substrate and a second substrate. The second substrate includes several sub-pixels. The first substrate includes several transistors and, for each subpixel, a first connecting electrode. The transistors are electrically connected to each other, and the first connecting electrode is electrically connected to the respective one of the transistors. Each sub-pixel includes a light-emitting region and a non light-emitting region. A second connecting electrode is formed within the non light-emitting region and projects toward the first substrate. The first and second substrates are electrically connected via the connection of the first and second connecting electrodes.

摘要翻译： 通过组装第一基板和第二基板来形成有机发光器件。 第二基板包括若干子像素。 第一基板包括多个晶体管，并且对于每个子像素，第一连接电极。 晶体管彼此电连接，并且第一连接电极电连接到相应的一个晶体管。 每个子像素包括发光区域和非发光区域。 第二连接电极形成在非发光区域内并向第一基板突出。 第一和第二基板经由第一和第二连接电极的连接电连接。

公开(公告)号：US20070002566A1

公开(公告)日：2007-01-04

申请号：US11475529

申请日：2006-06-27

申请人： Biing-Seng Wu ,  Wang-Yang Li ,  Kuo-Tsun Huang ,  Chen-Pin Hung

发明人： Biing-Seng Wu ,  Wang-Yang Li ,  Kuo-Tsun Huang ,  Chen-Pin Hung

IPC分类号： F21V13/04

CPC分类号： G02F1/133603 ,  H01L25/0753 ,  H01L33/54 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014

摘要： A planar light source device includes a substrate, a circuit layer and light sources. The substrate is penetrable to visible light and has a radiating surface and a second surface opposite the radiating surface. The circuit layer and the light sources are disposed on the second surface of the substrate, and the light sources are electrically connected to the circuit layer.

摘要翻译： 平面光源装置包括基板，电路层和光源。 基板可透过可见光，并具有辐射表面和与辐射表面相对的第二表面。 电路层和光源设置在基板的第二表面上，并且光源电连接到电路层。

公开(公告)号：US06861749B2

公开(公告)日：2005-03-01

申请号：US10247553

申请日：2002-09-20

申请人： Chia-Hui Wu ,  Biing-Seng Wu ,  Ying-Chou Tu

发明人： Chia-Hui Wu ,  Biing-Seng Wu ,  Ying-Chou Tu

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L23/48

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05166 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/1403 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/00014 ,  H01L2924/013

摘要： A semiconductor device comprises a substrate having contact pads each covered by under bump metallurgy and a plurality of bump electrodes respectively provided on the under bump metallurgy covering the contact pads. According to one embodiment of the present invention, the semiconductor device is characterized by having at least one contact pad (e.g., a test contact pad) which is not provided with any bump electrode but still has under bump metallurgy provided thereon. According to another embodiment of the present invention, the semiconductor device is characterized by having at least a conductive line formed of the same material as the under bump metallurgy for interconnecting at least two of the contact pads. The present invention further provides methods of manufacturing the semiconductor devices.

摘要翻译： 半导体器件包括具有各自被凸块下金属覆盖的接触焊盘的基板和分别设置在覆盖接触焊盘的凸块下的金属上的多个凸起电极。 根据本发明的一个实施例，半导体器件的特征在于具有至少一个接触焊盘（例如，测试接触焊盘），其没有设置任何凸起电极，但是在其上设置有凸起下的冶金。 根据本发明的另一实施例，半导体器件的特征在于至少具有由与凸块下方冶金相同的材料形成的导电线，用于互连至少两个接触焊盘。 本发明还提供了制造半导体器件的方法。

公开(公告)号：US5721164A

公开(公告)日：1998-02-24

申请号：US747503

申请日：1996-11-12

申请人： Biing-Seng Wu

发明人： Biing-Seng Wu

IPC分类号： H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/49 ,  H01L21/74

CPC分类号： H01L29/66765 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/78636

摘要： An additional high quality insulating layer is grown over the substrate after the formation of the gate electrode of a thin film transistor (TFT). The growth temperature of the insulating layer can be higher than conventional method and the insulating layer is more free of pin-holes. After the insulating layer in the thin oxide region of the TFT is etched away, conventional fabrication processes are followed. The dielectric of the thin film oxide region is the same as that of the conventional TFT; but the dielectric in the vincinity of the thin oxide region, the crossovers of the data lines and the scan lines, and the gate dielectric layer of the TFT are now composed of the high quality insulating layer. The TFT structure can improve the yield of fabrication by confining the channel region in the shadow of the gate electrode to reduce the leakage photo-current, and by reducing the steps at cross-overs steps and interconnections to avoid open-circuit.

摘要翻译： 在形成薄膜晶体管（TFT）的栅电极之后，在衬底上生长另外的高质量绝缘层。 绝缘层的生长温度可以高于常规方法，并且绝缘层更没有针孔。 在TFT的薄氧化物区域中的绝缘层被蚀刻掉之后，遵循常规的制造工艺。 薄膜氧化物区域的电介质与常规TFT的电介质相同; 但是薄氧化物区域的横截面中的电介质，数据线和扫描线的交叉点以及TFT的栅介质层现在由高质量绝缘层组成。 TFT结构可以通过将沟道区域限制在栅电极的阴影中来降低制造的产量，以减少泄漏光电流，并且通过减少交叉步骤和互连处的步骤以避免开路。

公开(公告)号：US5233448A

公开(公告)日：1993-08-03

申请号：US877711

申请日：1992-05-04

申请人： Biing-Seng Wu

发明人： Biing-Seng Wu

IPC分类号： G02F1/1362

CPC分类号： G02F1/136204 ,  Y10S345/904

摘要： A method of manufacturing a liquid crystal display panel by forming a plurality of spaced scan lines, a plurality of spaced orthogonal data lines, and contact pads for each line on a substrate. Forming an electrostatic discharge line and light controlled discharge devices, each device being joined to the discharge line and a contact pad. Next illuminating the discharge devices and completing the fabrication of the array of optical display elements on the substrate associated with scan and data lines, blocking the light from discharge devices and electrically testing the array. Then again illuminating the discharge devices while assembling a second substrate over the first substrate and inserting the liquid crystal material therebetween.

摘要翻译： 一种制造液晶显示面板的方法，该方法是通过在基板上形成多个间隔开的扫描线，多个间隔开的正交数据线和每条线的接触垫。 形成静电放电线和光控放电装置，每个装置连接到放电线和接触垫。 接下来，对放电装置进行照明并完成在与扫描和数据线相关联的衬底上的光学显示元件阵列的制造，阻止来自放电装置的光并对阵列进行电测试。 然后在第一基板上组装第二基板并在其间插入液晶材料的同时再次照射放电装置。

公开(公告)号：US5075237A

公开(公告)日：1991-12-24

申请号：US558772

申请日：1990-07-26

申请人： Biing-Seng Wu

发明人： Biing-Seng Wu

IPC分类号： H01L31/113 ,  H01L31/20

CPC分类号： H01L31/202 ,  H01L31/1136 ,  Y02E10/50 ,  Y10S148/15

摘要： Disclosed is a process for making a thin film transistor photodetector which has the combined merits of the photodiode and the photoconductor without their problems. The resulting device of this process has an accumulation gate on the bottom of the active semiconductor layer and a transparent depletion gate on the top of the active semiconductor layer. The gate length of the depletion gate is smaller than that of the accumulation gate.

摘要翻译： 公开了一种制造薄膜晶体管光电检测器的方法，其具有光电二极管和光电导体的组合优点，而没有其问题。 所得到的该工艺的器件在有源半导体层的底部具有堆积栅极，在有源半导体层顶部具有透明的耗尽栅极。 耗尽栅极的栅极长度小于累积栅极的栅极长度。