公开(公告)号：US09556363B2

公开(公告)日：2017-01-31

申请号：US14750271

申请日：2015-06-25

Applicant: Cabot Microelectronics Corporation

Inventor： Lin Fu ,  Steven Grumbine ,  Jeffrey Dysard ,  Wei Weng ,  Lei Liu ,  Alexei Leonov

IPC: C09G1/02 ,  H01L21/306 ,  H01L21/3105 ,  C09K3/14 ,  H01L21/321 ,  C09K13/00

CPC classification number: C09G1/02 ,  C09K3/14 ,  C09K3/1436 ,  C09K3/1463 ,  C09K13/00 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/3212

Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles having a chemical compound incorporated therein. The chemical compound may include a nitrogen-containing compound such as an aminosilane or a phosphorus-containing compound. Methods for employing such compositions include applying the composition to a semiconductor substrate to remove at least a portion of at least one of a copper, a copper barrier, and a dielectric layer.

Abstract translation: 化学机械抛光组合物包括其中掺入化学化合物的胶体二氧化硅磨料颗粒。 化合物可以包括含氮化合物如氨基硅烷或含磷化合物。 使用这种组合物的方法包括将组合物施加到半导体衬底以去除铜，铜屏障和电介质层中的至少一种的至少一部分。

公开(公告)号：US09499721B2

公开(公告)日：2016-11-22

申请号：US14749948

申请日：2015-06-25

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Jeffrey Dysard ,  Ernest Shen ,  Mary Cavanaugh

IPC: B44C1/22 ,  C09G1/02 ,  B24B1/00 ,  C09G1/00 ,  C09G1/04 ,  C09K3/14 ,  H01L21/306 ,  H01L21/321 ,  H01L21/3105

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1436 ,  C09K3/1454 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles dispersed in a liquid carrier. The colloidal silica abrasive particles include a nitrogen-containing or phosphorus-containing compound incorporated therein such that the particles have a positive charge. The composition may be used to polish a substrate including a silicon oxygen material such as TEOS.

Abstract translation: 化学机械抛光组合物包括分散在液体载体中的胶体二氧化硅磨料颗粒。 胶体二氧化硅磨料颗粒包括掺入其中的含氮或含磷化合物，使得颗粒具有正电荷。 组合物可用于抛光包括硅氧材料如TEOS的基材。

公开(公告)号：US09422457B2

公开(公告)日：2016-08-23

申请号：US14750107

申请日：2015-06-25

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Jeffrey Dysard ,  Ernest Shen ,  Mary Cavanaugh

IPC: C09G1/02 ,  B24B1/00 ,  C09G1/00 ,  C09G1/04 ,  C09K3/14 ,  H01L21/306 ,  H01L21/321 ,  H01L21/3105

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1436 ,  C09K3/1454 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: A chemical-mechanical polishing concentrate includes at least 10 weight percent of a colloidal silica abrasive particle dispersed in a liquid carrier having a pH in a range from about 1.5 to about 7. The colloidal silica abrasive includes an aminosilane compound or a phosphonium silane compound incorporated therein. The concentrate may be diluted with at least 3 parts water per one part concentrate prior to use.

Abstract translation: 化学机械抛光浓缩物包含至少10重量％的分散在pH在约1.5至约7范围内的液体载体中的胶态二氧化硅磨料颗粒。胶体二氧化硅磨料包括氨基硅烷化合物或掺入鏻硅烷化合物 其中。 在使用之前，浓缩物可以用至少3份水/份浓缩物稀释。

公开(公告)号：US09422456B2

公开(公告)日：2016-08-23

申请号：US14749923

申请日：2015-06-25

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Jeffrey Dysard ,  Ernest Shen ,  Mary Cavanaugh

IPC: C09G1/02 ,  B24B1/00 ,  C09G1/00 ,  C09G1/04 ,  C09K3/14 ,  H01L21/306 ,  H01L21/321 ,  H01L21/3105

CPC classification number: C09G1/02 ,  B24B1/00 ,  B24B37/044 ,  C09G1/00 ,  C09G1/04 ,  C09G1/06 ,  C09K3/1436 ,  C09K3/1454 ,  C09K3/1463 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212

Abstract: A chemical-mechanical polishing composition includes colloidal silica abrasive particles dispersed in a liquid carrier having a pH in a range from about 1.5 to about 7. The colloidal silica abrasive particles include an aminosilane compound or a phosphonium silane compound incorporated therein. The composition may be used to polish a substrate including a silicon oxygen material such as TEOS.

Abstract translation: 化学 - 机械抛光组合物包括分散在pH在约1.5至约7范围内的液体载体中的胶体二氧化硅磨料颗粒。胶体二氧化硅磨料颗粒包括掺入其中的氨基硅烷化合物或鏻硅烷化合物。 组合物可用于抛光包括硅氧材料如TEOS的基材。

公开(公告)号：US20150267082A1

公开(公告)日：2015-09-24

申请号：US14222716

申请日：2014-03-24

Applicant: Cabot Microelectronics Corporation

Inventor： Steven Grumbine ,  Jeffrey Dysard

IPC: C09G1/02 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/30625 ,  H01L21/3212

Abstract: A chemical mechanical polishing composition includes a water based liquid carrier and first and second silica abrasives dispersed in the liquid carrier. The first silica abrasive is a colloidal silica abrasive having a permanent positive charge of at least 10 mV. The second silica abrasive has a neutral charge or a non-permanent positive charge. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.

Abstract translation: 化学机械抛光组合物包括水基液体载体和分散在液体载体中的第一和第二二氧化硅研磨剂。 第一种二氧化硅研磨剂是具有至少10mV的永久正电荷的胶体二氧化硅研磨剂。 第二硅石磨料具有中性电荷或非永久正电荷。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。