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公开(公告)号：US11845156B2
公开(公告)日：2023-12-19
申请号：US16923688
申请日：2020-07-08
发明人： Rui Ma , Lin Fu , Chen-Chih Tsai , Jaeseok Lee , Sarah Brosnan
IPC分类号： B24B37/24
CPC分类号： B24B37/24
摘要： A chemical-mechanical polishing pad comprising a thermosetting polyurethane polishing layer includes an isocyanate-terminated urethane prepolymer, a polyamine curative, and a cyclohexanedimethanol curative. The polyamine curative and the cyclohexanedimethanol curative are in a molar ratio of polyamine curative to cyclohexanedimethanol curative in a range from about 20:1 to about 1:1.
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公开(公告)号：US09771496B2
公开(公告)日：2017-09-26
申请号：US14924997
申请日：2015-10-28
发明人： Kevin Dockery , Helin Huang , Lin Fu , Tina Li
摘要： Described are chemical-mechanical polishing compositions (e.g., slurries) and methods of using the slurries for chemical-mechanical polishing (or planarizing) a surface of a substrate that contains tungsten, the compositions containing cationic surfactant and cyclodextrin.
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公开(公告)号：US11845157B2
公开(公告)日：2023-12-19
申请号：US16868965
申请日：2020-05-07
发明人： Eric S. Moyer , Lin Fu , William Michael Spitzig , Chen-Chih Tsai , Ping Huang , Justin Stewart , Carlos Barros
摘要： A chemical mechanical polishing (CMP) pad includes a polishing portion formed using a vat-based additive manufacturing process. The polishing portion includes a polymer material with a first elastic modulus. In some embodiments the polishing portion is disposed on the backing portion. The backing portion may have a second elastic modulus. The second elastic modulus may be less than the first elastic modulus.
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公开(公告)号：US20210008687A1
公开(公告)日：2021-01-14
申请号：US16923688
申请日：2020-07-08
发明人： Rui MA , Lin Fu , Chen-Chih Tsai , Jaeseck Lee , Sarah Brosnan
IPC分类号： B24B37/24
摘要： A chemical-mechanical polishing pad comprising a thermosetting polyurethane polishing layer includes an isocyanate-terminated urethane prepolymer, a polyamine curative, and a cyclohexanedimethanol curative. The polyamine curative and the cyclohexanedimethanol curative are in a molar ratio of polyamine curative to cyclohexanedimethanol curative in a range from about 20:1 to about 1:1.
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公开(公告)号：US10562149B2
公开(公告)日：2020-02-18
申请号：US15273855
申请日：2016-09-23
发明人： Lin Fu , Rui Ma , Nathan Speer , Chen-Chih Tsai , Kathryn Bergman
摘要： A chemical-mechanical polishing pad comprising a polyurethane polishing layer having a high storage modulus at low temperatures and a low storage modulus at high temperatures is disclosed. For example, the disclosed pad embodiments may be fabricated from a thermoplastic polyurethane having a ratio of storage modulus at 25 degrees C. to storage modulus at 80 degrees C. of 50 or more. The thermoplastic polyurethane polishing layer may further optionally have a Shore D hardness of 70 or more, a tensile elongation of 320 percent or less, a storage modulus at 25 degrees C. of 1200 MPa or more, and/or a storage modulus at 80 degrees C. of 15 MPa or less.
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公开(公告)号：US09631122B1
公开(公告)日：2017-04-25
申请号：US14925054
申请日：2015-10-28
发明人： Kevin Dockery , Helin Huang , Lin Fu
摘要： Described are chemical mechanical polishing compositions and methods of using the compositions for planarizing a surface of a substrate that contains tungsten, the compositions containing silica abrasive particles and cationic surfactant.
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公开(公告)号：US09238754B2
公开(公告)日：2016-01-19
申请号：US14203621
申请日：2014-03-11
发明人： Steven Grumbine , Jeffrey Dysard , Lin Fu , William Ward , Glenn Whitener
IPC分类号： C09G1/02 , H01L21/306 , H01L21/321
CPC分类号： B24B37/044 , C09G1/02 , C09K3/1436 , C09K3/1463 , C23F1/40 , H01L21/3212
摘要： A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.
摘要翻译： 一种用于抛光具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的胶体二氧化硅磨料并具有至少6mV的永久正电荷，液体载体中的溶液中的胺化合物 ，和含铁促进剂。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。
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公开(公告)号：US09566686B2
公开(公告)日：2017-02-14
申请号：US14965168
申请日：2015-12-10
发明人： Steven Grumbine , Jeffrey Dysard , Lin Fu , William Ward , Glenn Whitener
IPC分类号： B24B37/04 , C23F1/40 , H01L21/321 , C09G1/02
CPC分类号： B24B37/044 , C09G1/02 , C09K3/1436 , C09K3/1463 , C23F1/40 , H01L21/3212
摘要： A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, an amine compound in solution in the liquid carrier, and an iron containing accelerator. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.
摘要翻译： 一种用于抛光具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的胶体二氧化硅磨料并具有至少6mV的永久正电荷，液体载体中的溶液中的胺化合物 ，和含铁促进剂。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。
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公开(公告)号：US09303188B2
公开(公告)日：2016-04-05
申请号：US14203647
申请日：2014-03-11
发明人： Steven Grumbine , Jeffrey Dysard , Lin Fu , William Ward , Glenn Whitener
IPC分类号： C09K13/00 , C09G1/02 , H01L21/306 , H01L21/321
CPC分类号： C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/30625 , H01L21/3212
摘要： A chemical mechanical polishing composition for polishing a substrate having a tungsten layer includes a water based liquid carrier, a colloidal silica abrasive dispersed in the liquid carrier and having a permanent positive charge of at least 6 mV, and a polycationic amine compound in solution in the liquid carrier. A method for chemical mechanical polishing a substrate including a tungsten layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the tungsten from the substrate and thereby polish the substrate.
摘要翻译： 用于研磨具有钨层的基材的化学机械抛光组合物包括水基液体载体，分散在液体载体中的具有至少6mV的永久正电荷的胶态二氧化硅磨料和在该溶液中的聚阳离子胺化合物 液体载体。 用于化学机械抛光包括钨层的基材的方法包括使基底与上述抛光组合物接触，使抛光组合物相对于基底移动，并研磨基底以从基底去除一部分钨，从而抛光 基质。
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公开(公告)号：US20150376462A1
公开(公告)日：2015-12-31
申请号：US14750204
申请日：2015-06-25
发明人： Lin Fu , Steven Grumbine , Jeffrey Dysard , Tina Li
IPC分类号： C09G1/02 , H01L21/3105
CPC分类号： C09G1/02 , C09K3/14 , C09K3/1436 , C09K3/1463 , C09K13/00 , H01L21/30625 , H01L21/31053 , H01L21/31055 , H01L21/3212
摘要： A chemical-mechanical polishing composition includes colloidal silica abrasive particles having a chemical compound incorporated therein. The chemical compound may include a nitrogen-containing compound such as an aminosilane or a phosphorus-containing compound. Methods for employing such compositions include applying the composition to a semiconductor substrate to remove at least a portion of a layer.
摘要翻译： 化学机械抛光组合物包括其中掺入化学化合物的胶体二氧化硅磨料颗粒。 化合物可以包括含氮化合物如氨基硅烷或含磷化合物。 使用这种组合物的方法包括将组合物施加到半导体衬底以去除层的至少一部分。
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