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104 条记录 (耗时 0.04 秒)

    Custom electrodes for molecular memory and logic devices
    32.
    发明申请
    Custom electrodes for molecular memory and logic devices 审中-公开
    用于分子存储器和逻辑器件的定制电极

    公开(公告)号：US20050026427A1

    公开(公告)日：2005-02-03

    申请号：US10930062

    申请日：2004-08-30

    申请人： Patricia Beck ,  Douglas Ohlberg ,  Duncan Stewart ,  Zhiyong Li

    发明人： Patricia Beck ,  Douglas Ohlberg ,  Duncan Stewart ,  Zhiyong Li

    IPC分类号： H01L21/28 ,  G11C13/02 ,  H01L21/285 ,  H01L27/28 ,  H01L29/06 ,  H01L21/00

    CPC分类号： H01L27/28 ,  G11C13/02 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method is provided for fabricating molecular electronic devices comprising at least a bottom electrode and a molecular switch film on the bottom electrode. The method includes forming the bottom electrode by a process including: cleaning portions of the substrate where the bottom electrode is to be deposited; pre-sputtering the portions; depositing a conductive layer on at least the portions; and cleaning the top surface of the conductive layer. Advantageously, the conductive electrode properties include: low or controlled oxide formation (or possibly passivated), high melting point, high bulk modulus, and low diffusion. Smooth deposited film surfaces are compatible with Langmuir-Blodgett molecular film deposition. Tailored surfaces are further useful for SAM deposition. The metallic nature gives high conductivity connection to molecules. Barrier layers may be added to the device stack, i.e., Al2O3 over the conductive layer.

    摘要翻译： 提供了一种用于制造分子电子器件的方法，该分子电子器件至少包括底部电极和底部电极上的分子开关膜。 该方法包括通过以下工艺形成底部电极，该方法包括：清洗要沉积底部电极的衬底的部分; 预溅射部分; 在至少部分上沉积导电层; 并清洁导电层的顶表面。 有利地，导电电极的性质包括：低或受控的氧化物形成（或可能钝化），高熔点，高体积弹性模量和低扩散。 光滑的沉积膜表面与Langmuir-Blodgett分子膜沉积相容。 定制的表面对于SAM沉积是更有用的。 金属性质使分子具有高导电性。 阻挡层可以被添加到器件堆叠，即在导电层上的Al 2 O 3。

    Field-emission ion source and ion thruster apparatus comprising such sources
    34.
    发明授权
    Field-emission ion source and ion thruster apparatus comprising such sources 失效
    场致发射离子源和包括这种源的离子推进器装置

    公开(公告)号：US4328667A

    公开(公告)日：1982-05-11

    申请号：US25348

    申请日：1979-03-30

    申请人： Dominique R. Valentian ,  Cesare M. Bartoli ,  Heinrich A. Pfeffer ,  Hans-Joachim Herhudt V. Rohden ,  Duncan Stewart

    发明人： Dominique R. Valentian ,  Cesare M. Bartoli ,  Heinrich A. Pfeffer ,  Hans-Joachim Herhudt V. Rohden ,  Duncan Stewart

    IPC分类号： F03H1/00 ,  H01J27/26

    CPC分类号： F03H1/005 ,  H01J27/26

    摘要： A field-emission ion source in which, under the influence of an electric field, ions are released from a metal or metal alloy present in an enclosed space in the liquid state. The ions are emitted from this space through a very narrow slit. This slit may be straight or curved. The field-emission ion source can be used in an ion thruster apparatus comprising an emitter module, an electrode system, and a power supply unit. A plurality of emitter modules can be combined to form an ion thruster apparatus having a greater ion current output. Instead of a liquid metal as the propellant, a metal in the solid phase can be supplied to the emitter module, which metal is melted in the emitter module.

    摘要翻译： 一种场致发射离子源，其中在电场的影响下，离子从处于液态的封闭空间中的金属或金属合金释放出来。 离子通过非常狭窄的狭缝从该空间发射。 该狭缝可以是直的或弯曲的。 场致发射离子源可用于包括发射器模块，电极系统和电源单元的离子推进器装置中。 多个发射器模块可以组合以形成具有更大离子电流输出的离子推进器装置。 代替液体金属作为推进剂，可以将固相中的金属供应到发射器模块，该发射器模块中的金属在发射器模块中熔化。

    Crystalline silicon-based memristive device with multiple mobile dopant species
    37.
    发明授权
    Crystalline silicon-based memristive device with multiple mobile dopant species 有权
    具有多种移动掺杂物种的晶体硅基忆阻器件

    公开(公告)号：US08614432B2

    公开(公告)日：2013-12-24

    申请号：US13139557

    申请日：2009-01-15

    申请人： Matthew D Pickett ,  Duncan Stewart

    发明人： Matthew D Pickett ,  Duncan Stewart

    IPC分类号： H01L47/00

    CPC分类号： H01L27/101 ,  G11C13/00 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2213/33 ,  G11C2213/77 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1206 ,  H01L45/1233 ,  H01L45/148

    摘要： A memristive device includes a first and a second electrode; a silicon memristive matrix interposed between the first electrode and the second electrode; and a mobile dopant species within the silicon memristive matrix which moves in response to a programming electrical field and remains substantially in place after the removal of the programming electrical field. A method for using a crossbar architecture containing a silicon memristive matrix includes: applying a programming electrical field by applying a voltage bias across a first conductor and a second conductor; a silicon memristive matrix containing mobile dopants being interposed between the first conductor and the second conductor, the programming voltage repositioning the mobile dopants within the silicon memristive matrix; and reading a state of the silicon memristive matrix by applying a reading energy across the silicon memristive matrix, the reading energy producing a measurable indication of the state of the silicon memristive matrix.

    摘要翻译： 忆阻器包括第一和第二电极; 插入在所述第一电极和所述第二电极之间的硅忆阻矩阵; 以及硅忆阻矩阵内的移动掺杂剂物质，其响应于编程电场而移动并且在去除编程电场之后保持基本上就位。 一种使用包含硅忆阻矩阵的交叉结构的方法包括：通过在第一导体和第二导体上施加电压偏置来施加编程电场; 含有移动掺杂剂的硅忆阻矩阵插入在第一导体和第二导体之间，编程电压重新定位硅忆阻矩阵内的移动掺杂剂; 并且通过在硅忆阻矩阵上施加读取能来读取硅忆阻矩阵的状态，所述读取能产生硅忆阻矩阵的状态的可测量指示。