利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

78 条记录 (耗时 0.027 秒)

    Omnidirectional reflector
    32.
    发明授权
    Omnidirectional reflector 有权

    公开(公告)号：US08415691B2

    公开(公告)日：2013-04-09

    申请号：US12202167

    申请日：2008-08-29

    申请人： Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

    发明人： Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

    IPC分类号： H01L33/00

    CPC分类号： H01L33/60 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/46 ,  H01L2933/0083

    摘要： A system and method for manufacturing an LED is provided. A preferred embodiment includes a substrate with a distributed Bragg reflector formed over the substrate. A photonic crystal layer is formed over the distributed Bragg reflector to collimate the light that impinges upon the distributed Bragg reflector, thereby increasing the efficiency of the distributed Bragg reflector. A first contact layer, an active layer, and a second contact layer are preferably either formed over the photonic crystal layer or alternatively attached to the photonic crystal layer.

    Light-emitting diode with current-spreading region
    33.
    发明授权
    Light-emitting diode with current-spreading region 有权
    具有电流扩展区域的发光二极管

    公开(公告)号：US08399273B2

    公开(公告)日：2013-03-19

    申请号：US12539757

    申请日：2009-08-12

    申请人： Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

    发明人： Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

    IPC分类号： H01L21/00

    CPC分类号： H01L33/145 ,  H01L33/0066 ,  H01L33/04 ,  H01L33/06 ,  H01L33/30 ,  H01L33/36 ,  H01L33/62 ,  H01L2933/0066

    摘要： A light-emitting diode (LED) device is provided. The LED device has a lower LED layer and an upper LED layer with a light-emitting layer interposed therebetween. A current blocking layer is formed in the upper LED layer such that current passing between an electrode contacting the upper LED layer flows around the current blocking layer. When the current blocking layer is positioned between the electrode and the light-emitting layer, the light emitted by the light-emitting layer is not blocked by the electrode and the light efficiency is increased. The current blocking layer may be formed by converting a portion of the upper LED layer into a resistive region. In an embodiment, ions such as magnesium, carbon, or silicon are implanted into the upper LED layer to form the current blocking layer.

    摘要翻译： 提供了一种发光二极管（LED）装置。 LED装置具有较低的LED层和位于其间的发光层的上部LED层。 在上LED层中形成电流阻挡层，使得在与上层LED层接触的电极之间的电流流过电流阻挡层。 当电流阻挡层位于电极和发光层之间时，由发光层发射的光不被电极阻挡，并且光效率增加。 可以通过将上部LED层的一部分转换成电阻区域来形成电流阻挡层。 在一个实施方案中，诸如镁，碳或硅的离子注入上层LED层以形成电流阻挡层。

    Method of separating light-emitting diode from a growth substrate
    34.
    发明授权
    Method of separating light-emitting diode from a growth substrate 有权
    从生长衬底分离发光二极管的方法

    公开(公告)号：US08236583B2

    公开(公告)日：2012-08-07

    申请号：US12554578

    申请日：2009-09-04

    申请人： Ding-Yuan Chen ,  Hung-Ta Lin ,  Chen-Hua Yu ,  Wen-Chih Chiou

    发明人： Ding-Yuan Chen ,  Hung-Ta Lin ,  Chen-Hua Yu ,  Wen-Chih Chiou

    IPC分类号： H01L21/00

    CPC分类号： H01L33/007 ,  C23C14/048 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L25/167 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.

    摘要翻译： 提供一种形成发光二极管（LED）器件并将LED器件与生长衬底分离的方法。 LED器件通过在生长衬底上形成LED结构而形成。 该方法包括在生长衬底上形成和图案化掩模层。 在图案化掩模层上形成第一接触层，在第一接触层和图案化掩模层之间具有空气桥。 第一接触层可以是LED结构的接触层。 在形成LED结构之后，生长衬底沿着空气桥与LED结构分离。

    III-Nitride Based Semiconductor Structure with Multiple Conductive Tunneling Layer
    36.
    发明申请
    III-Nitride Based Semiconductor Structure with Multiple Conductive Tunneling Layer 有权
    基于III型氮化物的多导体隧穿层半导体结构

    公开(公告)号：US20120007048A1

    公开(公告)日：2012-01-12

    申请号：US13237181

    申请日：2011-09-20

    申请人： Chia-Lin Yu ,  Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

    发明人： Chia-Lin Yu ,  Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

    IPC分类号： H01L29/12 ,  H01L21/20

    CPC分类号： H01L33/04 ,  H01L33/12 ,  H01L33/32

    摘要： A semiconductor structure includes a substrate and a conductive carrier-tunneling layer over and contacting the substrate. The conductive carrier-tunneling layer includes first group-III nitride (III-nitride) layers having a first bandgap, wherein the first III-nitride layers have a thickness less than about 5 nm; and second III-nitride layers having a second bandgap lower than the first bandgap, wherein the first III-nitride layers and the second III-nitride layers are stacked in an alternating pattern. The semiconductor structure is free from a III-nitride layer between the substrate and the conductive carrier-tunneling layer. The semiconductor structure further includes an active layer over the conductive carrier-tunneling layer.

    摘要翻译： 半导体结构包括衬底和与衬底接触的导电载体隧穿层。 导电载体隧穿层包括具有第一带隙的第一III族氮化物（III族氮化物）层，其中第一III族氮化物层具有小于约5nm的厚度; 和具有比第一带隙低的第二带隙的第二III族氮化物层，其中第一III族氮化物层和第二III族氮化物层以交替图案堆叠。 半导体结构在衬底和导电载体 - 隧穿层之间不含III族氮化物层。 半导体结构还包括在导电载体 - 隧穿层上的有源层。

    Method of Separating Light-Emitting Diode from a Growth Substrate
    37.
    发明申请
    Method of Separating Light-Emitting Diode from a Growth Substrate 有权
    将发光二极管与生长衬底分离的方法

    公开(公告)号：US20100062551A1

    公开(公告)日：2010-03-11

    申请号：US12554578

    申请日：2009-09-04

    申请人： Ding-Yuan Chen ,  Hung-Ta Lin ,  Chen-Hua Yu ,  Wen-Chih Chiou

    发明人： Ding-Yuan Chen ,  Hung-Ta Lin ,  Chen-Hua Yu ,  Wen-Chih Chiou

    IPC分类号： H01L27/15

    CPC分类号： H01L33/007 ,  C23C14/048 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L25/167 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.

    摘要翻译： 提供一种形成发光二极管（LED）器件并将LED器件与生长衬底分离的方法。 LED器件通过在生长衬底上形成LED结构而形成。 该方法包括在生长衬底上形成和图案化掩模层。 在图案化掩模层上形成第一接触层，在第一接触层和图案化掩模层之间具有空气桥。 第一接触层可以是LED结构的接触层。 在形成LED结构之后，生长衬底沿着空气桥与LED结构分离。

    Light-Emitting Diode on a Conductive Substrate
    38.
    发明申请
    Light-Emitting Diode on a Conductive Substrate 有权
    导电基板上的发光二极管

    公开(公告)号：US20100055818A1

    公开(公告)日：2010-03-04

    申请号：US12541787

    申请日：2009-08-14

    申请人： Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

    发明人： Ding-Yuan Chen ,  Chen-Hua Yu ,  Wen-Chih Chiou

    IPC分类号： H01L33/00

    CPC分类号： H01L33/0062 ,  H01L21/78 ,  H01L33/0066 ,  H01L33/0079 ,  H01L2924/01078 ,  H01S5/1231 ,  H01S5/2275

    摘要： A light-emitting diode (LED) device is provided. The LED device is formed by forming an LED structure on a first substrate. A portion of the first substrate is converted to a porous layer, and a conductive substrate is formed over the LED structure on an opposing surface from the first substrate. The first substrate is detached from the LED structure along the porous layer and any remaining materials are removed from the LED structure.

    摘要翻译： 提供了一种发光二极管（LED）装置。 LED器件通过在第一衬底上形成LED结构而形成。 将第一衬底的一部分转换成多孔层，并且在与第一衬底相对的表面上的LED结构上形成导电衬底。 第一衬底沿着多孔层与LED结构分离，并且从LED结构中去除任何剩余的材料。

    Vertical III-Nitride Light Emitting Diodes on Patterned Substrates with Embedded Bottom Electrodes
    39.
    发明申请
    Vertical III-Nitride Light Emitting Diodes on Patterned Substrates with Embedded Bottom Electrodes 审中-公开
    垂直III型氮化物发光二极管在嵌有底部电极的图案衬底上

    公开(公告)号：US20100012954A1

    公开(公告)日：2010-01-21

    申请号：US12191033

    申请日：2008-08-13

    申请人： Chen-Hua Yu ,  Chia-Lin Yu ,  Wen-Chih Chiou ,  Ding-Yuan Chen ,  Hung-Ta Lin

    发明人： Chen-Hua Yu ,  Chia-Lin Yu ,  Wen-Chih Chiou ,  Ding-Yuan Chen ,  Hung-Ta Lin

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/382 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/14 ,  H01L33/38 ,  H01L2933/0016

    摘要： A light emitting diode (LED) device is presented. The LED device includes a substrate, a layered LED structure, and an embedded bottom electrode. The layered LED structure includes a buffer/nucleation layer disposed on the substrate, an active layer, and a top-side contact. A first-contact III-nitride layer is interposed between the buffer/nucleation layer and the active layer. A second-contact III-nitride layer is interposed between the active well layer and the top-side contact. A bottom electrode extends through the substrate, through the buffer/nucleation layer and terminates within the first-contact III-nitride layer.

    摘要翻译： 提出了一种发光二极管（LED）装置。 LED器件包括衬底，层状LED结构和嵌入式底部电极。 分层LED结构包括设置在基板上的缓冲/成核层，有源层和顶侧接触。 第一接触III族氮化物层介于缓冲层/成核层与有源层之间。 第二接触III族氮化物层介于活性阱层和顶侧接触之间。 底部电极延伸通过衬底，通过缓冲/成核层并终止于第一接触III族氮化物层内。