摘要:
Black diamond films, deposited using PECVD at low substrate temperatures, have been effectively stabilized by immersing them in de-ionized water at a temperature of about 90° C. for about 20 minutes or in a hydrogen peroxide solution (typically at a concentration of 10%) for about 60 minutes. Since it has been observed that the dielectric constant of the stabilized film increases with both immersion time and/or peroxide concentration, this effect may be used as a means for adjusting the dielectric constant of a black diamond film. Standard analytical techniques confirm that these low temperature stabilized films have electrical properties that are at least as good as those of films stabilized using high temperature heat treatments.
摘要:
Among other things, one or more techniques for conditional cell placement are provided herein. In an embodiment, a conditional boundary is created for a first cell. For example, the conditional boundary enables the first cell to be placed relative to a second cell based on a conditional placement rule. In an embodiment, the first cell is placed in a first manner relative to the second cell based in a first scenario. In a second scenario, different than the first scenario, the first cell is placed in a second manner relative to the second cell. In this manner, conditional cell placement is provided, thus providing flexibility and improved layout efficiency with regard to semiconductor fabrication, for example.
摘要:
A Cu damascene structure is formed where Cu diffusion barrier is formed by treating the top surface of the surrounding low-k interlayer dielectric with nitrogen or carbon containing medium to form a silicon nitride or silicon carbide diffusion barrier rather than capping the top surface of the Cu with metal diffusion barrier as is conventionally done.
摘要:
Apparatus for forming a semiconductor structure comprising a first layer on top of a substrate wherein the first layer defines conductive regions such as copper interconnect lines and non-conductive regions such as dielectric materials. The conductive regions are covered by a second layer of a material different than the first layer such as for example nickel and then the structure is heat treated such that the interconnect lines and second metal, such as a copper interconnect line and a nickel second layer, interact with each other to form an alloy layer. The alloy layer has superior qualities for adhering to both the copper interconnect lines and a subsequently deposited dielectric material.
摘要:
Methods and apparatus for forming a semiconductor structure comprising a first layer on top of a substrate wherein the first layer defines conductive regions such as copper interconnect lines and non-conductive regions such as dielectric materials. The conductive regions are covered by a second layer of a material different than the first layer such as for example nickel and then the structure is heat treated such that the interconnect lines and second metal, such as a copper interconnect line and a nickel second layer, interact with each other to form an alloy layer. The alloy layer has superior qualities for adhering to both the copper interconnect lines and a subsequently deposited dielectric material.
摘要:
A Cu damascene structure is formed where Cu diffusion barrier is formed by treating the top surface of the surrounding low-k interlayer dielectric with nitrogen or carbon containing medium to form a silicon nitride or silicon carbide diffusion barrier rather than capping the top surface of the Cu with metal diffusion barrier as is conventionally done.
摘要:
A power supply circuit for a PCI-E slot includes a control chip, a first electronic switch, and a second electronic switch. The control chip determines a status of a motherboard, outputting a control signal. A first terminal of the first electronic switch is connected to the control chip to receive the control signal, and connected to a +3.3V dual power supply of the motherboard through a first resistor. A second terminal of the first electronic switch is grounded. A third terminal of the first electronic switch is connected to a first terminal of the second electronic switch, and connected to the +3.3V dual power supply through a second resistor. A second terminal of the second electronic switch is connected to the +3.3V dual power supply. A third terminal of the second electronic switch is connected to a PCI-E slot.
摘要:
A display device includes a RFID tag unit, a display unit, a processing unit and a power supply unit. The RFID tag unit follows a wireless communication standard of a RFID system to receive a wireless signal and outputs identification information. The processing unit electrically connected with the RFID tag unit and the display unit receives the identification information and outputs to the display unit for displaying. The power supply unit supplies operation power required to the processing unit and the display unit. The required power while the above-mentioned display device refreshes the information is supplied by the power supply unit, so that the information can be refreshed with longer communication distance and power saving is achieved. A display system including the above-mentioned display device and a reader/writer device is also disclosed.
摘要:
A method of forming spacers with different widths on a semiconductor substrate, includes the steps of disposing a first spacer layer over the substrate, defining the first spacer layer into a plurality of spacers of a first width, and disposing a second spacer layer selectively over the first spacer layer of a number of the spacers preselected for the second spacer layer, the predetermined number of the spacers with the second spacer layer each having a second width which is different from the first width.