Power supply circuit for PCI-E slot
    1.
    发明授权
    Power supply circuit for PCI-E slot 有权
    PCI-E插槽电源电路

    公开(公告)号:US08269549B2

    公开(公告)日:2012-09-18

    申请号:US13048973

    申请日:2011-03-16

    CPC classification number: G06F1/26

    Abstract: A power supply circuit for a PCI-E slot includes a control chip, a first electronic switch, and a second electronic switch. The control chip determines a status of a motherboard, outputting a control signal. A first terminal of the first electronic switch is connected to the control chip to receive the control signal, and connected to a +3.3V dual power supply of the motherboard through a first resistor. A second terminal of the first electronic switch is grounded. A third terminal of the first electronic switch is connected to a first terminal of the second electronic switch, and connected to the +3.3V dual power supply through a second resistor. A second terminal of the second electronic switch is connected to the +3.3V dual power supply. A third terminal of the second electronic switch is connected to a PCI-E slot.

    Abstract translation: 用于PCI-E插槽的电源电路包括控制芯片,第一电子开关和第二电子开关。 控制芯片确定主板的状态,输出控制信号。 第一电子开关的第一端子连接到控制芯片以接收控制信号,并通过第一电阻器连接到主板的+ 3.3V双电源。 第一个电子开关的第二个端子接地。 第一电子开关的第三端子连接到第二电子开关的第一端子,并通过第二电阻器连接到+ 3.3V双电源。 第二个电子开关的第二个端子连接到+ 3.3V双电源。 第二电子开关的第三端子连接到PCI-E插槽。

    Soft plasma oxidizing plasma method for forming carbon doped silicon containing dielectric layer with enhanced adhesive properties
    5.
    发明授权
    Soft plasma oxidizing plasma method for forming carbon doped silicon containing dielectric layer with enhanced adhesive properties 有权
    软等离子体氧化等离子体法,用于形成具有增强的粘合性质的含碳掺杂的含硅介电层

    公开(公告)号:US06407013B1

    公开(公告)日:2002-06-18

    申请号:US09761422

    申请日:2001-01-16

    CPC classification number: H01L21/3105 H01L21/76826 H01L21/76829

    Abstract: Within a method for forming a dielectric layer within a microelectronic fabrication there is first provided a substrate. There is then formed over the substrate a carbon doped silicon containing dielectric layer. There is then treated the carbon doped silicon containing dielectric layer with an oxidizing plasma to form from the carbon doped silicon containing dielectric layer an oxidizing plasma treated carbon doped silicon containing dielectric layer. By treating the carbon doped silicon containing dielectric layer with the oxidizing plasma, particularly under mild conditions, to form therefrom the oxidizing plasma treated carbon doped silicon containing dielectric layer, adhesion of an additional microelectronic layer upon the oxidizing plasma treated carbon doped silicon containing dielectric layer is enhanced in comparison with adhesion of the additional microelectronic layer upon the carbon doped silicon containing dielectric layer, while not compromising dielectric properties of the carbon doped silicon containing dielectric layer.

    Abstract translation: 在微电子制造中形成电介质层的方法中,首先提供衬底。 然后在衬底上形成含碳掺杂的含硅电介质层。 然后用具有氧化等离子体的碳掺杂的含硅介电层处理从含碳掺杂的含硅介电层形成氧化等离子体处理的含碳的含硅介电层。 通过用氧化等离子体处理含碳掺杂的含硅电介质层,特别是在温和条件下由其形成氧化等离子体处理的含碳硅的介电层,附加的微电子层与氧化等离子体处理的碳掺杂的含硅介电层 与附加的微电子层对含碳的含硅介电层的粘附性相比增强,同时不损害含碳掺杂的含硅介电层的介电性质。

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