公开(公告)号：US20120202358A1

公开(公告)日：2012-08-09

申请号：US13366025

申请日：2012-02-03

申请人： Dan Gealy ,  Vishwanath Bhat ,  Cancheepuram V. Srividya ,  M. Noel Rocklein

发明人： Dan Gealy ,  Vishwanath Bhat ,  Cancheepuram V. Srividya ,  M. Noel Rocklein

IPC分类号： H01L21/314

CPC分类号： H01L21/022 ,  C23C16/45529 ,  H01L21/02148 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/31641 ,  H01L21/31645 ,  H01L28/40 ,  H01L28/56 ,  H01L29/517 ,  H01L29/78

摘要： Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment, a dielectric layer is graded with respect to a crystalline structure profile across the dielectric layer. In an embodiment, a dielectric layer is formed by atomic layer deposition incorporating sequencing techniques to generate a doped dielectric material.

摘要翻译： 梯度介电层和制造这种电介质层的方法在各种电子结构中提供电介质以用于广泛的电子设备和系统。 在一个实施例中，电介质层相对于跨介电层的掺杂分布而分级。 在一个实施例中，电介质层相对于介电层上的晶体结构分布呈梯度分布。 在一个实施例中，通过包含测序技术的原子层沉积形成电介质层以产生掺杂的电介质材料。

公开(公告)号：US20120098093A1

公开(公告)日：2012-04-26

申请号：US13338527

申请日：2011-12-28

申请人： Vishwanath Bhat ,  Noel Rocklein ,  F. Daniel Gealy

发明人： Vishwanath Bhat ,  Noel Rocklein ,  F. Daniel Gealy

IPC分类号： H01L29/02

CPC分类号： H01L28/60 ,  Y10T29/417

摘要： A method of forming a capacitor includes forming a conductive first capacitor electrode material comprising TiN over a substrate. TiN of the TiN-comprising material is oxidized effective to form conductive TiOxNy having resistivity no greater than 1 ohm·cm over the TiN-comprising material where x is greater than 0 and y is from 0 to 1.4. A capacitor dielectric is formed over the conductive TiOxNy. Conductive second capacitor electrode material is formed over the capacitor dielectric. Other aspects and implementations are contemplated, including capacitors independent of method of fabrication.

摘要翻译： 形成电容器的方法包括在衬底上形成包含TiN的导电的第一电容器电极材料。 含TiN材料的TiN被有效地氧化，形成电阻率不大于1欧姆·厘米的电导率TiO x N y，其中x大于0，y为0至1.4。 在导电TiO x N y上形成电容器电介质。 在电容器电介质上形成导电的第二电容器电极材料。 考虑了其他方面和实现方式，包括独立于制造方法的电容器。

公开(公告)号：US08105896B2

公开(公告)日：2012-01-31

申请号：US12480496

申请日：2009-06-08

申请人： Vishwanath Bhat ,  Noel Rocklein ,  F. Daniel Gealy

发明人： Vishwanath Bhat ,  Noel Rocklein ,  F. Daniel Gealy

IPC分类号： H01L21/8242

CPC分类号： H01L28/60 ,  Y10T29/417

摘要： A method of forming a capacitor includes forming a conductive first capacitor electrode material comprising TiN over a substrate. TiN of the TiN-comprising material is oxidized effective to form conductive TiOxNy having resistivity no greater than 1 ohm·cm over the TiN-comprising material where x is greater than 0 and y is from 0 to 1.4. A capacitor dielectric is formed over the conductive TiOxNy. Conductive second capacitor electrode material is formed over the capacitor dielectric. Other aspects and implementations are contemplated, including capacitors independent of method of fabrication.

摘要翻译： 形成电容器的方法包括在衬底上形成包含TiN的导电的第一电容器电极材料。 含TiN材料的TiN被有效地氧化，形成电阻率不大于1欧姆·厘米的电导率TiO x N y，其中x大于0，y为0至1.4。 在导电TiO x N y上形成电容器电介质。 在电容器电介质上形成导电的第二电容器电极材料。 考虑了其他方面和实现方式，包括独立于制造方法的电容器。

公开(公告)号：US20100311219A1

公开(公告)日：2010-12-09

申请号：US12857159

申请日：2010-08-16

申请人： Vishwanath Bhat ,  Kevin R. Shea

发明人： Vishwanath Bhat ,  Kevin R. Shea

IPC分类号： H01L21/02

CPC分类号： H01L28/91

摘要： A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode openings within the insulative material received over individual capacitor storage node locations. The intervening area comprises a trench. Conductive metal nitride-comprising material is formed within the openings and against a sidewall portion of the trench to less than completely fill the trench. Inner sidewalls of the conductive material within the trench are annealed in a nitrogen-comprising atmosphere. The insulative material within the array area is etched with a liquid etching solution effective to expose outer sidewall portions of the conductive material within the array area. The conductive material within the array area is incorporated into a plurality of capacitors.

摘要翻译： 形成多个电容器的方法包括在电容器阵列区域和电路区域上接收的绝缘材料。 阵列区域包括在单独的电容器存储节点位置处接收的绝缘材料内的多个电容器电极开口。 中间区域包括沟槽。 导电的含金属氮化物的材料形成在开口内并抵靠沟槽的侧壁部分以小于完全填充沟槽。 沟槽内的导电材料的内侧壁在含氮气氛中退火。 用液体蚀刻溶液蚀刻阵列区域内的绝缘材料，有效地暴露阵列区域内的导电材料的外侧壁部分。 阵列区域内的导电材料被并入多个电容器中。

公开(公告)号：US07759717B2

公开(公告)日：2010-07-20

申请号：US11364383

申请日：2006-02-27

申请人： Vishwanath Bhat ,  Chris M. Carlson ,  F. Daniel Gealy

发明人： Vishwanath Bhat ,  Chris M. Carlson ,  F. Daniel Gealy

IPC分类号： H01L29/76

CPC分类号： H01G4/085 ,  H01G4/1272 ,  H01G4/33 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/31616 ,  H01L21/31683 ,  H01L28/40

摘要： A capacitor includes a first capacitor electrode which includes conductive metal. A second capacitor electrode is spaced from the first capacitor electrode. A capacitor dielectric region is received between the first and second capacitor electrodes. Such region comprising a first portion oxide material of a first density over the first capacitor electrode, and a second portion oxide material of a second density received over the first portion. The oxide-comprising material of the first portion and the oxide-comprising material of the second portion are the same in chemical composition and the second density is greater than the first density.

摘要翻译： 电容器包括包括导电金属的第一电容器电极。 第二电容器电极与第一电容器电极间隔开。 电容器电介质区域被接收在第一和第二电容器电极之间。 这种区域包括在第一电容器电极上的第一密度的第一部分氧化物材料和在第一部分上接收的第二密度的第二部分氧化物材料。 第一部分的含氧化物材料和第二部分的含氧化物的材料在化学组成上相同，第二密度大于第一密度。

公开(公告)号：US07439564B2

公开(公告)日：2008-10-21

申请号：US11123380

申请日：2005-05-05

申请人： Vishwanath Bhat ,  F. Daniel Gealy ,  Cancheepuram V. Srividya

发明人： Vishwanath Bhat ,  F. Daniel Gealy ,  Cancheepuram V. Srividya

IPC分类号： H01L27/108

CPC分类号： H01L28/56 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L28/40

摘要： The invention includes constructions having two dielectric layers over a conductively-doped semiconductive material. One of the dielectric layers contains aluminum oxide, and the other contains a metal oxide other than aluminum oxide (such metal oxide can be, for example, one or more of hafnium oxide, tantalum oxide, titanium oxide and zirconium oxide). The layer containing aluminum oxide is between the layer containing metal oxide and the conductively-doped semiconductive material. The invention includes capacitor devices having one electrode containing conductively-doped silicon and another electrode containing one or more metals and/or metal compounds. At least two dielectric layers are formed between the two capacitor electrodes, with one of the dielectric layers containing aluminum oxide and the other containing a metal oxide other than aluminum oxide. The invention also includes methods of forming capacitor constructions.

摘要翻译： 本发明包括在导电掺杂的半导体材料上具有两个电介质层的结构。 电介质层中的一层包含氧化铝，另外含有氧化铝以外的金属氧化物（例如，氧化铪，氧化钽，氧化钛，氧化锆等中的一种或多种）。 含有氧化铝的层位于含金属氧化物层和导电掺杂半导体材料之间。 本发明包括具有一个含有导电掺杂硅的电极和含有一种或多种金属和/或金属化合物的另一电极的电容器器件。 在两个电容器电极之间形成至少两个电介质层，其中一个电介质层包含氧化铝，另一个包含除氧化铝之外的金属氧化物。 本发明还包括形成电容器结构的方法。

公开(公告)号：US20060145294A1

公开(公告)日：2006-07-06

申请号：US11364383

申请日：2006-02-27

申请人： Vishwanath Bhat ,  Chris Carlson ,  F. Gealy

发明人： Vishwanath Bhat ,  Chris Carlson ,  F. Gealy

IPC分类号： H01L29/00

CPC分类号： H01G4/085 ,  H01G4/1272 ,  H01G4/33 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/31616 ,  H01L21/31683 ,  H01L28/40

摘要： A method of forming a capacitor includes forming a conductive metal first electrode layer over a substrate, with the conductive metal being oxidizable to a higher degree at and above an oxidation temperature as compared to any degree of oxidation below the oxidation temperature. At least one oxygen containing vapor precursor is fed to the conductive metal first electrode layer below the oxidation temperature under conditions effective to form a first portion oxide material of a capacitor dielectric region over the conductive metal first electrode layer. At least one vapor precursor is fed over the first portion at a temperature above the oxidation temperature effective to form a second portion oxide material of the capacitor dielectric region over the first portion. The oxide material of the first portion and the oxide material of the second portion are common in chemical composition. A conductive second electrode layer is formed over the second portion oxide material of the capacitor dielectric region.

摘要翻译： 形成电容器的方法包括在衬底上形成导电金属第一电极层，与在氧化温度以下的任何氧化度相比，导电金属可以在氧化温度以上高于可氧化的程度。 在导电金属第一电极层上有效形成电容器电介质区域的第一部分氧化物材料的条件下，在氧化温度以下将至少一种含氧气体前体供给至导电金属第一电极层。 至少一种蒸气前体在高于氧化温度的温度下在第一部分上进料，有效地在第一部分上形成电容器电介质区域的第二部分氧化物材料。 第一部分的氧化物材料和第二部分的氧化物材料在化学组成中是常见的。 在电容器电介质区域的第二部分氧化物材料上形成导电的第二电极层。

公开(公告)号：US20050227433A1

公开(公告)日：2005-10-13

申请号：US11123380

申请日：2005-05-05

申请人： Vishwanath Bhat ,  F. Gealy ,  Cancheepuram Srividya

发明人： Vishwanath Bhat ,  F. Gealy ,  Cancheepuram Srividya

IPC分类号： H01L21/00 ,  H01L21/02 ,  H01L21/316 ,  H01L21/8242

CPC分类号： H01L28/56 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L28/40

摘要： The invention includes constructions having two dielectric layers over a conductively-doped semiconductive material. One of the dielectric layers contains aluminum oxide, and the other contains a metal oxide other than aluminum oxide (such metal oxide can be, for example, one or more of hafnium oxide, tantalum oxide, titanium oxide and zirconium oxide). The layer containing aluminum oxide is between the layer containing metal oxide and the conductively-doped semiconductive material. The invention includes capacitor devices having one electrode containing conductively-doped silicon and another electrode containing one or more metals and/or metal compounds. At least two dielectric layers are formed between the two capacitor electrodes, with one of the dielectric layers containing aluminum oxide and the other containing a metal oxide other than aluminum oxide. The invention also includes methods of forming capacitor constructions.

摘要翻译： 本发明包括在导电掺杂的半导体材料上具有两个电介质层的结构。 电介质层中的一层包含氧化铝，另外含有氧化铝以外的金属氧化物（例如，氧化铪，氧化钽，氧化钛，氧化锆等中的一种或多种）。 含有氧化铝的层位于含金属氧化物层和导电掺杂半导体材料之间。 本发明包括具有一个含有导电掺杂硅的电极和含有一种或多种金属和/或金属化合物的另一电极的电容器器件。 在两个电容器电极之间形成至少两个电介质层，其中一个电介质层包含氧化铝，另一个包含除氧化铝之外的金属氧化物。 本发明还包括形成电容器结构的方法。

公开(公告)号：US08865544B2

公开(公告)日：2014-10-21

申请号：US13546927

申请日：2012-07-11

申请人： Joseph Neil Greeley ,  Duane M. Goodner ,  Vishwanath Bhat ,  Vassil N. Antonov ,  Prashant Raghu

发明人： Joseph Neil Greeley ,  Duane M. Goodner ,  Vishwanath Bhat ,  Vassil N. Antonov ,  Prashant Raghu

IPC分类号： H01L21/8242

CPC分类号： H01L28/75 ,  B82Y30/00 ,  H01L27/10808 ,  H01L27/10852 ,  H01L28/65 ,  H01L28/90 ,  Y10S977/932 ,  Y10T428/265

摘要： Some embodiments include a method of forming a capacitor. An opening is formed through a silicon-containing mass to a base, and sidewalls of the opening are lined with protective material. A first capacitor electrode is formed within the opening and has sidewalls along the protective material. At least some of the silicon-containing mass is removed with an etch. The protective material protects the first capacitor electrode from being removed by the etch. A second capacitor electrode is formed along the sidewalls of the first capacitor electrode, and is spaced from the first capacitor electrode by capacitor dielectric. Some embodiments include multi-material structures having one or more of aluminum nitride, molybdenum nitride, niobium nitride, niobium oxide, silicon dioxide, tantalum nitride and tantalum oxide. Some embodiments include semiconductor constructions.

摘要翻译： 一些实施例包括形成电容器的方法。 通过含硅物质向基底形成开口，并且开口的侧壁衬有保护材料。 第一电容器电极形成在开口内并具有保护材料的侧壁。 用蚀刻去除至少一些含硅物质。 保护材料保护第一电容器电极不被蚀刻除去。 沿着第一电容器电极的侧壁形成第二电容器电极，并且通过电容器电介质与第一电容器电极间隔开。 一些实施例包括具有氮化铝，氮化钼，氮化铌，氧化铌，二氧化硅，氮化钽和氧化钽中的一种或多种的多材料结构。 一些实施例包括半导体结构。

公开(公告)号：US08602702B2

公开(公告)日：2013-12-10

申请号：US13354754

申请日：2012-01-20

申请人： Philippe Roy ,  Peter Driessen ,  Vishwanath Bhat

发明人： Philippe Roy ,  Peter Driessen ,  Vishwanath Bhat

IPC分类号： B61D45/00 ,  A47B7/00

CPC分类号： B64D11/0696 ,  B60N2/01525 ,  B60N2/01575

摘要： Described are track fitting assemblies having a main body with at least one plunger aperture, at least one button aperture intersecting the at least one plunger aperture, and at least one disengagement recess, at least one shear plunger assembly having a plunger, a shear pin, a plunger-spring, and a button comprising a recess, and a track with a pair of lips having at least one opening. The shear plunger assembly is configured to have a disengaged position, wherein the button is extended from the main body and the shear pin is positioned within the main body, and an engaged position, wherein the button is positioned substantially flush with the main body, the recess of the button is positioned substantially flush with the disengagement recess of the main body, and the shear pin is extended from the main body and within the at least one opening.

摘要翻译： 描述的是轨道装配组件，其具有具有至少一个柱塞孔的主体，与至少一个柱塞孔相交的至少一个按钮孔，以及至少一个分离凹槽，至少一个剪切柱塞组件，其具有柱塞，剪切销， 柱塞弹簧和包括凹部的按钮以及具有至少一个开口的一对唇部的轨道。 剪切柱塞组件构造成具有脱离位置，其中按钮从主体延伸并且剪切销定位在主体内以及接合位置，其中按钮基本上与主体齐平， 按钮的凹部被定位成与主体的脱离凹槽基本齐平，并且剪切销从主体延伸并且在至少一个开口内延伸。