公开(公告)号：US07733552B2

公开(公告)日：2010-06-08

申请号：US11689430

申请日：2007-03-21

申请人： Ana R. Londergan ,  Bangalore R. Natarajan ,  Evgeni Gousev ,  James Randolph Webster ,  David Heald

发明人： Ana R. Londergan ,  Bangalore R. Natarajan ,  Evgeni Gousev ,  James Randolph Webster ,  David Heald

IPC分类号： G02F1/00

CPC分类号： G02B26/001 ,  B81B3/0008 ,  B81B2201/047

摘要： Devices, methods, and systems comprising a MEMS device, for example, an interferometric modulator, that comprises a cavity in which a layer coats multiple surfaces. The layer is conformal or non-conformal. In some embodiments, the layer is formed by atomic layer deposition (ALD). Preferably, the layer comprises a dielectric material. In some embodiments, the MEMS device also exhibits improved characteristics, such as improved electrical insulation between moving electrodes, reduced stiction, and/or improved mechanical properties.

摘要翻译： 包括MEMS器件（例如干涉式调制器）的器件，方法和系统，其包括其中层涂覆多个表面的空腔。 该层是保形的或非保形的。 在一些实施例中，该层由原子层沉积（ALD）形成。 优选地，该层包括电介质材料。 在一些实施例中，MEMS器件还表现出改进的特性，例如移动电极之间的改善的电绝缘性，降低的静摩擦力和/或改善的机械性能。

公开(公告)号：US20090002804A1

公开(公告)日：2009-01-01

申请号：US12163660

申请日：2008-06-27

申请人： Bangalore R. Natarajan ,  Kasra Khazeni ,  David Heald ,  Rihui He ,  Sriram Akella ,  Evgeni Gousev

发明人： Bangalore R. Natarajan ,  Kasra Khazeni ,  David Heald ,  Rihui He ,  Sriram Akella ,  Evgeni Gousev

IPC分类号： G02B26/00 ,  H01L21/00

CPC分类号： B81C1/0092 ,  B81B3/0005 ,  B81B2201/047 ,  B81C2201/112 ,  G02B26/001

摘要： Methods, devices, and systems provide MEMS devices exhibiting at least one of reduced stiction, reduced hydrophilicity, or reduced variability of certain electrical characteristics using MEMS devices treated with water vapor. The treatment is believed to form one or more passivated surfaces on the interior and/or exterior of the MEMS devices. Relatively gentle temperature and pressure conditions ensure modification of surface chemistry without excessive water absorption after removal of sacrificial material to release the MEMS devices.

摘要翻译： 方法，装置和系统提供使用用水蒸汽处理的MEMS装置展现降低的静摩擦，降低的亲水性或某些电气特性的变化性中的至少一个的MEMS装置。 认为处理在MEMS器件的内部和/或外部形成一个或多个钝化表面。 相对温和的温度和压力条件确保在去除牺牲材料以释放MEMS器件之后，不改变表面化学性质而不过度吸水。

公开(公告)号：US20080311690A1

公开(公告)日：2008-12-18

申请号：US12061592

申请日：2008-04-02

申请人： Thanh Nghia Tu ,  Qi Luo ,  Chia Wei Yang ,  David Heald ,  Evgeni Gousev ,  Chih-Wei Chiang

发明人： Thanh Nghia Tu ,  Qi Luo ,  Chia Wei Yang ,  David Heald ,  Evgeni Gousev ,  Chih-Wei Chiang

IPC分类号： H01L21/52 ,  G02B26/00 ,  C23C16/00

CPC分类号： B81C1/00476 ,  B81B2201/047

摘要： Methods of making a microelectromechanical system (MEMS) device are described. In some embodiments, the method includes forming a sacrificial layer over a substrate, treating at least a portion of the sacrificial layer to form a treated sacrificial portion, forming an overlying layer over at least a part of the treated sacrificial portion, and at least partially removing the treated sacrificial portion to form a cavity situated between the substrate and the overlying layer, the overlying layer being exposed to the cavity.

摘要翻译： 描述制造微机电系统（MEMS）装置的方法。 在一些实施例中，该方法包括在衬底上形成牺牲层，处理牺牲层的至少一部分以形成经处理的牺牲部分，在经处理的牺牲部分的至少一部分上形成覆盖层，并且至少部分地 去除经处理的牺牲部分以形成位于衬底和上覆层之间的空腔，上覆层暴露于空腔。

公开(公告)号：US07321457B2

公开(公告)日：2008-01-22

申请号：US11445607

申请日：2006-06-01

申请人： David Heald

发明人： David Heald

IPC分类号： G02B26/00 ,  G02B26/08

CPC分类号： G02B26/001

摘要： A method of fabricating an array of MEMS devices includes the formation of support structures located at the edge of upper strip electrodes. A support structure is etched to form a pair of individual support structures located at the edges of a pair of adjacent electrodes. The electrodes themselves may be used as a hard mask during the etching of these support structures. A resultant array of MEMS devices includes support structures having a face located at the edge of an overlying electrode and coincident with the edge of the overlying electrode.

摘要翻译： 制造MEMS器件阵列的方法包括形成位于上条带电极边缘处的支撑结构。 蚀刻支撑结构以形成位于一对相邻电极的边缘处的一对单独的支撑结构。 在蚀刻这些支撑结构期间，电极本身可用作硬掩模。 所得到的MEMS器件阵列包括支撑结构，其具有位于上覆电极的边缘处并与上覆电极的边缘重合的面。

公开(公告)号：US20060040103A1

公开(公告)日：2006-02-23

申请号：US11147670

申请日：2005-06-07

申请人： Jeffery Whiteford ,  Rhett Brewer ,  Mihai Buretea ,  Jian Chen ,  Karen Cruden ,  Xiangfeng Duan ,  William Freeman ,  David Heald ,  Francisco Leon ,  Chao Liu ,  Andreas Meisel ,  Kyu Min ,  J. Parce ,  Erik Scher

发明人： Jeffery Whiteford ,  Rhett Brewer ,  Mihai Buretea ,  Jian Chen ,  Karen Cruden ,  Xiangfeng Duan ,  William Freeman ,  David Heald ,  Francisco Leon ,  Chao Liu ,  Andreas Meisel ,  Kyu Min ,  J. Parce ,  Erik Scher

IPC分类号： B32B5/16

CPC分类号： C09C1/3081 ,  B82Y30/00 ,  C01P2004/16 ,  C01P2004/45 ,  C01P2004/54 ,  C01P2004/64 ,  C01P2006/10 ,  C01P2006/40 ,  C01P2006/60 ,  C09C3/006 ,  C09C3/063 ,  C09C3/12 ,  H01G4/14 ,  Y10S977/773 ,  Y10T428/2982 ,  Y10T428/2989 ,  Y10T428/2991 ,  Y10T428/2993 ,  Y10T428/2995 ,  Y10T428/2996 ,  Y10T428/2998

摘要： Ligand compositions for use in preparing discrete coated nanostructures are provided, as well as the coated nanostructures themselves and devices incorporating same. Methods for post-deposition shell formation on a nanostructure and for reversibly modifying nanostructures are also provided. The ligands and coated nanostructures of the present invention are particularly useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures.

公开(公告)号：US20050287717A1

公开(公告)日：2005-12-29

申请号：US11148001

申请日：2005-06-07

申请人： David Heald ,  Karen Cruden ,  Xiangfeng Duan ,  Chao Liu ,  J. Parce

发明人： David Heald ,  Karen Cruden ,  Xiangfeng Duan ,  Chao Liu ,  J. Parce

IPC分类号： G03F7/075 ,  G11C13/00 ,  H01L21/28 ,  H01L21/312 ,  H01L21/469 ,  H01L21/82 ,  H01L27/10 ,  H01L29/739

CPC分类号： G03F7/0757 ,  B82Y10/00 ,  B82Y30/00 ,  G11C13/00 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/28273 ,  H01L21/3124 ,  Y10S977/755 ,  Y10S977/845 ,  Y10S977/855 ,  Y10S977/936 ,  Y10S977/938

摘要： Methods for forming or patterning nanostructure arrays are provided. The methods involve formation of arrays on coatings comprising nanostructure association groups, patterning using resist, and/or use of devices that facilitate array formation. Related devices for forming nanostructure arrays are also provided, as are devices including nanostructure arrays (e.g., memory devices).

摘要翻译： 提供了形成或构图纳米结构阵列的方法。 所述方法包括在包含纳米结构缔合基团的涂层上形成阵列，使用抗蚀剂进行图案化和/或使用便于阵列形成的装置。 还提供了用于形成纳米结构阵列的相关器件，以及包括纳米结构阵列（例如，存储器件）的器件。